Here are the all short channel effects that you require.It consist of:-
Drain Induced Barrier Lowering
Hot electron Effect
Impact Ionization
Surface Scattering
Velocity saturation
Reduced channel length cause departures from long channel behaviour as two-dimensional potential distribution and high electric fields give birth to Short channel effects.
Here are the all short channel effects that you require.It consist of:-
Drain Induced Barrier Lowering
Hot electron Effect
Impact Ionization
Surface Scattering
Velocity saturation
Reduced channel length cause departures from long channel behaviour as two-dimensional potential distribution and high electric fields give birth to Short channel effects.
Power gating is the main power reduction techniques for the static power. As long as technology scaling is taking place, static power becomes paramount important factor to the VLSI designs.Therefore Power gating is the recent power reduction technique that is actively in research areas.
SHORT-CHANNEL EFFECTS
A MOSFET is considered to be short when the channel length ‘L’ is the same order of magnitude as the depletion-layer widths (xdD, xdS). The potential distribution in the channel now depends upon both, transverse field Ex, due to gate bias and also on the longitudinal field Ey, due to drain bias When the Gate channel length <<1 m, short channel effect becomes important .
This leads to many
undesirable effects in MOSFET.
The short-channel effects are attributed to two physical phenomena:
A) The limitation imposed on electron drift characteristics in the channel,
B) The modification of the threshold voltage due to the shortening channel length.
In particular five different short-channel effects can be distinguished:
1. Drain-induced barrier lowering and “Punch through”
2. Surface scattering
3. Velocity saturation
4. Impact ionization
5. Hot electrons
In MOS, source-drain regions of adjacent MOS transistors together with interconnection metal lines may constitute parasitic MOS transistors unless they are isolated from each other. Hence, each MOSFET must be electrically isolated from each other. Device Isolation Techniques in VLSI microfabrication of MOS are discussed.
Structural and Electrical Analysis of Various MOSFET DesignsIJERA Editor
Invention of Transistor is the foundation of electronics industry. Metal Oxide Semiconductor Field Effect Transistor (MOSFET) has been the key to the development of nano electronics technology. This paper offers a brief review of some of the most popular MOSFET structure designs. The scaling down of planar bulk MOSFET proposed by the Moore’s Law has been saturated due to short channel effects and DIBL. Due to this alternative approaches has been considered to overcome the problems at lower node technology. SOI and FinFET technologies are promising candidates in this area.
Power gating is the main power reduction techniques for the static power. As long as technology scaling is taking place, static power becomes paramount important factor to the VLSI designs.Therefore Power gating is the recent power reduction technique that is actively in research areas.
SHORT-CHANNEL EFFECTS
A MOSFET is considered to be short when the channel length ‘L’ is the same order of magnitude as the depletion-layer widths (xdD, xdS). The potential distribution in the channel now depends upon both, transverse field Ex, due to gate bias and also on the longitudinal field Ey, due to drain bias When the Gate channel length <<1 m, short channel effect becomes important .
This leads to many
undesirable effects in MOSFET.
The short-channel effects are attributed to two physical phenomena:
A) The limitation imposed on electron drift characteristics in the channel,
B) The modification of the threshold voltage due to the shortening channel length.
In particular five different short-channel effects can be distinguished:
1. Drain-induced barrier lowering and “Punch through”
2. Surface scattering
3. Velocity saturation
4. Impact ionization
5. Hot electrons
In MOS, source-drain regions of adjacent MOS transistors together with interconnection metal lines may constitute parasitic MOS transistors unless they are isolated from each other. Hence, each MOSFET must be electrically isolated from each other. Device Isolation Techniques in VLSI microfabrication of MOS are discussed.
Structural and Electrical Analysis of Various MOSFET DesignsIJERA Editor
Invention of Transistor is the foundation of electronics industry. Metal Oxide Semiconductor Field Effect Transistor (MOSFET) has been the key to the development of nano electronics technology. This paper offers a brief review of some of the most popular MOSFET structure designs. The scaling down of planar bulk MOSFET proposed by the Moore’s Law has been saturated due to short channel effects and DIBL. Due to this alternative approaches has been considered to overcome the problems at lower node technology. SOI and FinFET technologies are promising candidates in this area.
Dual Metal Gate and Conventional MOSFET at Sub nm for Analog ApplicationVLSICS Design
The use of nanometer CMOS technologies (below 90nm) however brings along significant challenges for circuit design (both analog and digital). By reducing the dimensions of transistors many physical phenomenon like gate leakage, drain induced barrier lowering and many more effects comes into picture. Reducing the feature size in the technology of device with the addition of ever more interconnect layers, the density of the digital as well as analog circuit will increase while intrinsic gate switching delay is reduced . We have simulated conventional and DMG MOSFET at 30nm scale using Silvaco TAD tool and obtained result. A two dimensional device simulation was carried out and observed that DMG MOSFET has a low leakage current as compared to conventional MOSFET and find suitable application in analog circuits.
Design & Performance Analysis of DG-MOSFET for Reduction of Short Channel Eff...IJERA Editor
An aggressive scaling of conventional MOSFETs channel length reduces below 100nm and gate oxide thickness below 3nm to improved performance and packaging density. Due to this scaling short channel effect (SCEs) like threshold voltage, Subthreshold slope, ON current and OFF current plays a major role in determining the performance of scaled devices. The double gate (DG) MOSFETS are electro-statically superior to a single gate (SG) MOSFET and allows for additional gate length scaling. Simulation work on both devices has been carried out and presented in paper. The comparative study had been carried out for threshold voltage (VT), Subthreshold slope (Sub VT), ION and IOFF Current. It is observed that DG MOSFET provide good control on leakage current over conventional Bulk (Single Gate) MOSFET. The VT (Threshold Voltage) is 2.7 times greater than & ION of DG MOSFET is 2.2 times smaller than the conventional Bulk (Single Gate) MOSFET.
Microelectronic technology
This report briefly discusses the need for Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), their structure and principle of operation. Then it details the fabrication and characterization of the MOSFETs fabricated at the microelectronic lab at University of Malaya
shows the simulation and analysis of a MOSFET device using the MOSFet tool. Several powerful analytic features of this tool are demonstrated, including the following:
calculation of Id-Vg curves
potential contour plots along the device at equilibrium and at the final applied bias
electron density contour plots along the device at equilibrium and at the final applied bias
spatial doping profile along the device
1D spatial potential profile along the device
ULTRA HIGH SPEED FACTORIAL DESIGN IN SUB-NANOMETER TECHNOLOGYcscpconf
This work proposes a high speed and low power factorial design in 22nm technology and also it counts the effect of sub nano-meter constraints on this circuit. A comparative study for this
design has been done for 90nm, 45nm and 22nm technology. The rise in circuit complexity and speed is accompanied by the scaling of MOSFET’s. The transistor saturation current Idsat is an important parameter because the transistor current determines the time needed to charge and discharge the capacitive loads on chip, and thus impacts the product speed more than any other transistor parameter. The efficient implementation of a factorial number is carried out by using
a decremented and multipliers which has been lucidly discussed in this paper. Normally in a factorial module a number is calculated as the iterative multiplication of the given number to
the decremented value of the given number. A Parallel adder based decremented has been proposed for calculating the factorial of any number that also includes 0 and 1. The
performances are calculated by using the existing 90-nm CMOS technology and scaling down the existing technology to 45-nm and 22-nm.
IJRET : International Journal of Research in Engineering and Technology is an international peer reviewed, online journal published by eSAT Publishing House for the enhancement of research in various disciplines of Engineering and Technology. The aim and scope of the journal is to provide an academic medium and an important reference for the advancement and dissemination of research results that support high-level learning, teaching and research in the fields of Engineering and Technology. We bring together Scientists, Academician, Field Engineers, Scholars and Students of related fields of Engineering and Technology
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
SPICE model of drain induced barrier lowering in sub-10 nm junctionless cylin...IJECEIAES
We propose a SPICE Drain Induced Barrier Lowering (DIBL) model for sub10 nm Junctionless Cylindrical Surrounding Gate (JLCSG) MOSFETs. The DIBL shows the proportionl relation to the -3 power of the channel length L g and the 2 power of silicon thickness in MOSFET having a rectangular channel, but this relation cannot be used in cylindrical channel because of the difference in channel structure. The subthreshold currents, including the tunneling current from the WKB (Wentzel-Kramers-Brillouin) approximation as well as the diffusion-drift current, are used in the model. The constant current method is used to define the threshold voltage as the gate voltage at a constant current, (2πR/L g ) 10 -7 A for channel length and channel radius R. The central potential of the JLCSG MOSFET is determined by the Poisson equation. As a result, it can be seen that the DIBL of the JLCSG MOSFET is proportional to the –2.76 power of the channel length, to the 1.76 power of the channel radius, and linearly to the oxide film thickness. At this time, we observe that the SPICE parameter, the static feedback coefficient, has a value less than 1, and this model can be used to analyze the DIBL of the JLCSG MOSFET.
Investigation and design of ion-implanted MOSFET based on (18 nm) channel lengthTELKOMNIKA JOURNAL
The aim of this study is to invistgate the characteristics of Si-MOSFET with 18 nm length of ion implemented channel. Technology computer aided design (TCAD) tool from Silvaco was used to simulate the MOSFET’s designed structure in this research. The results indicate that the MOSFET with 18 nm channel length has cut-off frequency of 548 GHz and transconductance of 967 μS, which are the most important factors in calculating the efficiency and improving the performance of the device. Also, it has threshold voltage of (-0.17 V) in addition obtaining a relatively small DIBL (55.11 mV/V). The subthreshold slope was in high value of 307.5 mV/dec. and this is one of the undesirable factors for the device results by short channel effect, but it does not reduce its performance and efficiency in general.
Comparative analysis of technology advancement from single gate to multi gate...eSAT Journals
Abstract
Among the entire contender in modern microelectronics,DG-MOSFET is a front line runner in planar technology. Itsunique
structure allows scaling the device at sub-nanometer region and mimicking the electrical characteristics of a MOSFET.Here
simulation of NMOS, SOI-NMOS, and DG-NMOS is presentedand relative comparison among short channel characteristics
ispresented.It has been seen that among all the above stated device, DG-MOSFET possess better immune to leakage current with
betterDIBL, whereas SOI MOSFET have better driving capacity.
KeyWords:SOI-MOSFET, DG-MOSFET, UTB, DIBL,SCEs
The performance based analysis for typical Gaussian and Gaussian-Halo Doped Double Gate MOSFETs
in conjunction with Normal Doped DG MOSFETs, for which different parameters such as Oxide Thickness,
Ambient Temperature, Gate Material Work Function and Substrate Doping Concentration is varied. This
analysis has been carried out using a TCAD Lab simulation.. From the results obtained, it will be quite
clear that the sub-threshold leakage current of the Gaussian and Gaussian-Halo Doped Double Gate Metal
Oxide Semiconductor FET is relatively lesser. Furthermore the results have been plotted with different
Drain voltage values to enhance the understanding of the physics behind various Doping Profiles in
Double Gate MOSFET. Finally the results has been obtained, analysed and compared. The Possession of
higher Drain current Performance is very acceptable through the rigorous analysis using a TCAD Lab.
INVESTIGATIONAL INSIGHT ON GAUSSIAN AND GAUSSIAN-HALO DOPED DOUBLE GATE MOSFETSijistjournal
The performance based analysis for typical Gaussian and Gaussian-Halo Doped Double Gate MOSFETs in conjunction with Normal Doped DG MOSFETs, for which different parameters such as Oxide Thickness, Ambient Temperature, Gate Material Work Function and Substrate Doping Concentration is varied. This analysis has been carried out using a TCAD Lab simulation.. From the results obtained, it will be quite clear that the sub-threshold leakage current of the Gaussian and Gaussian-Halo Doped Double Gate Metal Oxide Semiconductor FET is relatively lesser. Furthermore the results have been plotted with different Drain voltage values to enhance the understanding of the physics behind various Doping Profiles in Double Gate MOSFET. Finally the results has been obtained, analysed and compared. The Possession of higher Drain current Performance is very acceptable through the rigorous analysis using a TCAD Lab.
Relevance of Grooved NMOSFETS in Ultra Deep Submicron Region in Low Power App...VLSICS Design
To manage the increasing static leakage in low power applications, solutions for leakage reduction are sought at the device design and process technology levels. In this paper, 90nm, 70nm and 50 nm groovedgate nMOS devices are simulated using Silvaco device simulator. By changing the corner angle and adjusting few structural parameters, static leakage reduction is achieved in grooved nMOSFETS in ultralow power applications. The simulation results show that leakage contributing currents like the subthreshold current, punchthrough current and tunneling leakage current are reduced. The oxide thickness can be increased without increase in the gate induced drain leakage current, and ON-OFF current ratio is improved and maintained constant even in the deep submicron region. This study can be helpful for low power applications as the static leakage is reduced drastically, as well as be applicable to high speed devices as the ON current is maintained at a constant value. The results are compared with those of corresponding conventional planar devices to bring out the achievements of this work.
Student information management system project report ii.pdfKamal Acharya
Our project explains about the student management. This project mainly explains the various actions related to student details. This project shows some ease in adding, editing and deleting the student details. It also provides a less time consuming process for viewing, adding, editing and deleting the marks of the students.
Hybrid optimization of pumped hydro system and solar- Engr. Abdul-Azeez.pdffxintegritypublishin
Advancements in technology unveil a myriad of electrical and electronic breakthroughs geared towards efficiently harnessing limited resources to meet human energy demands. The optimization of hybrid solar PV panels and pumped hydro energy supply systems plays a pivotal role in utilizing natural resources effectively. This initiative not only benefits humanity but also fosters environmental sustainability. The study investigated the design optimization of these hybrid systems, focusing on understanding solar radiation patterns, identifying geographical influences on solar radiation, formulating a mathematical model for system optimization, and determining the optimal configuration of PV panels and pumped hydro storage. Through a comparative analysis approach and eight weeks of data collection, the study addressed key research questions related to solar radiation patterns and optimal system design. The findings highlighted regions with heightened solar radiation levels, showcasing substantial potential for power generation and emphasizing the system's efficiency. Optimizing system design significantly boosted power generation, promoted renewable energy utilization, and enhanced energy storage capacity. The study underscored the benefits of optimizing hybrid solar PV panels and pumped hydro energy supply systems for sustainable energy usage. Optimizing the design of solar PV panels and pumped hydro energy supply systems as examined across diverse climatic conditions in a developing country, not only enhances power generation but also improves the integration of renewable energy sources and boosts energy storage capacities, particularly beneficial for less economically prosperous regions. Additionally, the study provides valuable insights for advancing energy research in economically viable areas. Recommendations included conducting site-specific assessments, utilizing advanced modeling tools, implementing regular maintenance protocols, and enhancing communication among system components.
Saudi Arabia stands as a titan in the global energy landscape, renowned for its abundant oil and gas resources. It's the largest exporter of petroleum and holds some of the world's most significant reserves. Let's delve into the top 10 oil and gas projects shaping Saudi Arabia's energy future in 2024.
Welcome to WIPAC Monthly the magazine brought to you by the LinkedIn Group Water Industry Process Automation & Control.
In this month's edition, along with this month's industry news to celebrate the 13 years since the group was created we have articles including
A case study of the used of Advanced Process Control at the Wastewater Treatment works at Lleida in Spain
A look back on an article on smart wastewater networks in order to see how the industry has measured up in the interim around the adoption of Digital Transformation in the Water Industry.
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Water scarcity is the lack of fresh water resources to meet the standard water demand. There are two type of water scarcity. One is physical. The other is economic water scarcity.
2. 1.Introduction to double gate
i. How can we follow Moore’s law
ii. Scaling
iii. Short channel effect
2.Literature Survey
3.Limitations of single gate MOSFET
4.Advantages of DG MOSFET
5.Refrences
3. The main idea of a Double Gate MOSFET is to control the Si channel
very efficiently by choosing the Si channel width to be very small and by
applying a gate contact to both sides of the channel. This concept helps
to suppress short channel effects and leads to higher currents as
compared with a MOSFET having only one gate.
4. Moore's law is the observation that the number of transistors in a dense integrated
circuit doubles approximately every two years. The observation is named after Gordon
Moore, the co-founder of Fairchild Semiconductor and Intel, whose 1965 paper described
a doubling every year in the number of components per integrated circuit,[and projected
this rate of growth would continue for at least another decade. In 1975,looking forward to
the next decade, he revised the forecast to doubling every two years, The period is often
quoted as 18 months because of Intel executive David House, who predicted that chip
performance would double every 18 months (being a combination of the effect of more
transistors and the transistors being faster).
5. As aggressive scaling of conventional MOSFETs channel
length reduces below 100 nm and gate oxide thickness
below 3nm to improved performance and packing density.
Due to this scaling short channel effects (SCEs) like
threshold voltage roll-off & gate leakage current play a
major role in determining the performance of scaled
devices. The double gate (DG) MOSFETs are electro-
statically superior to a single gate (SG) MOSFET and
allows for additional gate length scaling
6. The short-channel effects are attributed to two physical
phenomena:
A) The limitation imposed on electron drift
characteristics in
the channel.
B) The modification of the threshold voltage due to the
shortening channel length.
7. Gerold W. Neudeck discussed the double gate (DG) fully
depleted SOI MOSFET ,and its many implementations, and
is the leading device candidate for silicon nano scale
CMOS. Their main characteristics, as compared to the
single gate bulk MOSFET are less S/D capacitance ,larger
saturated current drive, smaller short channel effects(DIBL)
, scalability to L=10nm ,near ideal sub threshold slopes (S)
,and the possibility of electrically adjustable threshold
voltages.
8. Ayushi Shrivastava and Nitin Tripathi compared 25nm
Single gate Silicon on Insulator (SG-SOI) MOSFET with
Double Gate Silicon on insulator(DG-SOI) MOSFET. The
DG-SOI is similar to the proposed SOI with the exception of
back gate at body. The resulted modified DG-SOI MOSFET
reduced the short channel effects (SCE’s) . The transfer
characteristics DIBL ,threshold voltage, Ion and Ioff for 25nm
are evaluated . The back gate structure of DG-SOI is the
mirror image of front gate SOI.
The nano scale device have SCEs ,like DIBL ,hot carried
effect , due to which the device can not be further scaled.
So ,this work is further demonstrated by designing two
gates on same dimension of single gate. So that, the DG-
SOI performance enhance and will work more efficiently.
9. • Limit for supply voltage
• Limit for further scaling of tox
• Minimum channel length Lg=100nm
• Dramatic short- channel effects (SCE)
10. • Short channel effect control
i. Better scalability
ii. Lower sub-threshold current
• Higher on current
• Lower gate leakage
• Elimination of Vt variation due to random dopant
fluctuation
11. 1.Gerold W. Neudeck, “An Overview of Double-Gate
MOSFETs”, IEEE IN 47907-1285, July 2003
2.Ayushi Shrivastava , Nitin Tripathi, “Comparative study of
double gate MOSFET and single gate SOI
MOSFET”,IJEEE , Volume 07, Issue 01, Jan-June 2015
3.Xiaoping Liang ,“A 2-D Analytical Solution for SCEs in DG
MOSFETs”, VOL. 51, NO. 8, AUGUST 2004
