Introduction FinFET = Fin Field-Effect Transistor. A type of non-planar or “3D” transistor. Developed to overcome limitations of traditional planar MOSFETs. Enables continued Moore’s Law scaling.

1. FinFETs (Fin Field-Effect Transistors)
• The Future of Scaled CMOS Technology

2. Introduction
• - FinFET = Fin Field-Effect Transistor
• - A type of non-planar or “3D” transistor
• - Developed to overcome limitations of
traditional planar MOSFETs
• - Enables continued Moore’s Law scaling

3. Why FinFETs?
• - Planar MOSFETs suffer from short-channel
effects at sub-22nm nodes
• - Leakage current and power consumption
increase
• - FinFETs improve gate control over the
channel

4. Structure of a FinFET
• - The channel is a thin vertical “fin” of silicon
• - Gate wraps around 3 sides of the fin (tri-
gate)
• - Improves electrostatic control and reduces
leakage
• - Can be single-fin or multi-fin depending on
desired drive strength

5. Key Characteristics
• - Non-planar geometry (vertical fins)
• - Tri-gate control: top and both sides
• - Lower off-state leakage current
• - Better subthreshold slope and DIBL
performance
• - High Ion/Ioff ratio

6. Advantages of FinFETs
• - Improved gate control → reduced short-
channel effects
• - Lower power consumption at high
performance
• - Scalable to advanced nodes (down to 5nm
and beyond)
• - Better performance at smaller voltages

7. Fabrication Process (Overview)
• 1. Fin formation through etching
• 2. Gate oxide and gate electrode deposition
• 3. Source/drain implantation and annealing
• 4. Contact and interconnect formation
• - More complex than planar CMOS, but
manufacturable with current tech

8. Applications
• - Widely used in:
• - High-performance processors (Intel, AMD)
• - Mobile SoCs (Qualcomm, Apple)
• - AI accelerators
• - Essential in nodes < 22nm, standard in 7nm,
5nm nodes

9. Challenges
• - Complex fabrication
• - Fin pitch and height variation impact
performance
• - Requires new EDA tools and design
methodologies
• - Higher parasitic capacitance compared to
planar devices

10. FinFET vs Planar MOSFET
• Feature | Planar MOSFET | FinFET
• ------------------|---------------|--------
• Gate control | Single side | Tri-gate
• Leakage current | Higher | Lower
• Scalability | Limited | Excellent
• Performance | Lower | Higher

11. Conclusion
• - FinFETs represent a critical advancement in
semiconductor device technology
• - Enable continued scaling in accordance with
Moore's Law
• - Will remain dominant until newer devices
(e.g., GAAFETs) take over

12. References
• - Intel White Papers on FinFET (2011+)
• - IEEE Transactions on Electron Devices
• - IEDM and ISSCC conference papers