The document discusses the history and advantages of FINFET transistors over traditional planar MOSFETs. It explains that as MOSFET feature sizes decreased below 20nm, short channel effects became a challenge to address. FINFETs were developed as a solution, using fin-shaped silicon channels that allow for better channel control and reduced short channel effects compared to planar MOSFETs. Key advantages of FINFETs include the ability to scale to smaller feature sizes like 7nm, significantly reduced power consumption, higher operating speeds, and greatly reduced static leakage current.

1. FINFET TRANSISTORS
BY: ESMAEIL JAVADI
MASTER STUDENT OF KNTU
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2. MOOR’S LAW
• 1965 – 1975 first edition Theory
• Review in 1975 until now
• 6m from 1976 to 7nm in 2019
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3. HISTORY
• 20nm Feature size challenge in integration
• DIBL, Constriction Doping, Vth, Quantionic reactions, …
• FINFET Theory, Revolution in Structure of Planar Transistors
• HU & King-Liu & BOKO from Berkeley California firs theorist of FINFET 3

4. MOSFET SHORT CHANNEL EFFECTS
• Cg-s & Cg-d & Cg-ch
• Punch – Through & Doping
• DIBL Effect
• Surface Current Effect
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5. SOI MOSFET STRUCTURE
• Using SOI Wafer
• Advantage :
• Reduce the parasitic junction
capacitance
• Lower power
• Disadvantage :
• Difficulty in manufacturing
• Self-heating problem
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6. FINFET THEORY & STRUCTURE
• Offer in 1999 - 2000
• Without doping
• Improve channel control
• Decrease channel length
• Increase L/W parameter
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7. CHANNEL IMPROVING
Width of Channel = 2 X Fin Height + Fin Width (Equation-4)
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8. FINFET OPERATION
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9. ADVANTAGE
FINFET ADVANTAGES
• Solve disadvantage parameter in MOSFETs.
• Feature sizes - Possible to lower 7nm.
• Much lower power consumption allows high integration levels. (150%)
• Operating speed - Often in excess of 30% faster.
• Static leakage current-Typically reduced by up to 90%
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10. SAMSUNG FOUNDRY'S NEW TRANSISTOR
7nm Samsung Technology :
• GEAT-ALL-AROUND FET TRANSISTOR (GAAFET)
• MULTI-BRIDGE-CHANNEL FET TRANSISTOR (MBCFET)
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11. THE END
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