An aggressive scaling of conventional MOSFETs channel length reduces below 100nm and gate oxide thickness below 3nm to improved performance and packaging density. Due to this scaling short channel effect (SCEs) like threshold voltage, Subthreshold slope, ON current and OFF current plays a major role in determining the performance of scaled devices. The double gate (DG) MOSFETS are electro-statically superior to a single gate (SG) MOSFET and allows for additional gate length scaling. Simulation work on both devices has been carried out and presented in paper. The comparative study had been carried out for threshold voltage (VT), Subthreshold slope (Sub VT), ION and IOFF Current. It is observed that DG MOSFET provide good control on leakage current over conventional Bulk (Single Gate) MOSFET. The VT (Threshold Voltage) is 2.7 times greater than & ION of DG MOSFET is 2.2 times smaller than the conventional Bulk (Single Gate) MOSFET.
IMPACT OF DEVICE PARAMETERS OF TRIPLE GATE SOI-FINFET ON THE PERFORMANCE OF C...VLSICS Design
This document summarizes a simulation-based study of the impact of device parameters on the performance of 22nm triple gate SOI FinFETs. Device parameters like fin width, fin height, and gate oxide thickness were varied and their effects on short channel effects, on-current, off-current, and gate leakage current were analyzed. It was found that increasing fin width and height improved on-current but also increased off-current and short channel effects. Reducing fin thickness lowered off-current, while reducing fin height decreased gate leakage. The performance and static power of a CMOS inverter built using the FinFETs was also evaluated.
Dual Metal Gate and Conventional MOSFET at Sub nm for Analog ApplicationVLSICS Design
This document summarizes a study comparing a conventional MOSFET and dual metal gate (DMG) MOSFET at the 30nm technology node. Simulations were performed using Silvaco TCAD tools. Key results include:
1) The DMG MOSFET has a lower subthreshold slope and significantly lower gate leakage current compared to the conventional MOSFET.
2) Mobility and transconductance are higher in the DMG MOSFET, indicating better performance for analog applications that require high gain.
3) The DMG MOSFET has a higher intrinsic delay, making it more suitable for applications operated at lower voltages such as filters and sample-and-hold circuits, where gate
A Study On Double Gate Field Effect Transistor For Area And Cost Efficiencypaperpublications3
Abstract: Proposal for a field effect transistor had been presented, with numerical device simulations to verify the title in every manner possible. The two transitional field effect transistors like pMOS and nMOS functions are simultaneously performed, working as one or as the other according to the voltage applied to the gate terminal. Increase in the circuit speed is observed when this technology is implemented on the device suggested with respect to the standard CMOS technology, presented a drastic reduction of number devices and associated parasitic capacitances. In addition to it IC obtained with the proposed device are fully compatible with the standard CMOS technology and the fabrication processes. Fabrication of Static Ram cells with three transistors only with minimum dimensions and a single bit line by saving silicon area and increasing the memory performance with respect to standard CMOS technologies. It is also presented that the fully compatible CMOS process can be used to successfully manufacture the new FET structure.
LINEARITY AND ANALOG PERFORMANCE ANALYSIS OF DOUBLE GATE TUNNEL FET: EFFECT O...VLSICS Design
The linearity and analog performance of a Silicon Double Gate Tunnel Field Effect Transistor (DG-TFET) is investigated and the impact of elevated temperature on the device performance degradation has been studied. The impact on the device performance due to the rise in temperature and a gate stack (GS) architecture has also been investigated for the case of Silicon DG-MOSFET and a comparison with DGTFET is made. The parameters overning the analog performance and linearity have been studied, and high frequency simulations are carried out to determine the cut-off frequency of the device and its temperature dependence.
ULTRA HIGH SPEED FACTORIAL DESIGN IN SUB-NANOMETER TECHNOLOGYcscpconf
This work proposes a high speed and low power factorial design in 22nm technology and also it counts the effect of sub nano-meter constraints on this circuit. A comparative study for this
design has been done for 90nm, 45nm and 22nm technology. The rise in circuit complexity and speed is accompanied by the scaling of MOSFET’s. The transistor saturation current Idsat is an important parameter because the transistor current determines the time needed to charge and discharge the capacitive loads on chip, and thus impacts the product speed more than any other transistor parameter. The efficient implementation of a factorial number is carried out by using
a decremented and multipliers which has been lucidly discussed in this paper. Normally in a factorial module a number is calculated as the iterative multiplication of the given number to
the decremented value of the given number. A Parallel adder based decremented has been proposed for calculating the factorial of any number that also includes 0 and 1. The
performances are calculated by using the existing 90-nm CMOS technology and scaling down the existing technology to 45-nm and 22-nm.
DC performance analysis of a 20nm gate length n-type Silicon GAA junctionless...IJECEIAES
This summary provides the key details about the document in 3 sentences:
The document analyzes the DC performance of a 20nm gate length n-type silicon gate-all-around junctionless transistor using 3D quantum transport modeling. Simulation results show the device has a threshold voltage of 0.55V, subthreshold slope of 63mV/decade approaching the ideal value, an on/off current ratio of 10e+10, and a drain-induced barrier lowering of 98mV/V. Overall, the junctionless gate-all-around transistor shows improved short channel effects compared to an inversion-mode gate-all-around transistor.
Geometric and process design of ultra-thin junctionless double gate vertical ...IJECEIAES
The junctionless MOSFET architectures appear to be attractive in realizing the Moore’s law prediction. In this paper, a comprehensive 2-D simulation on junctionless vertical double-gate MOSFET (JLDGVM) under geometric and process consideration was introduced in order to obtain excellent electrical characteristics. Geometrical designs such as channel length (Lch) and pillar thickness (Tp) were considered and the impact on the electrical performance was analyzed. The influence of doping concentration and metal gate work function (WF) were further investigated for achieving better performance. The results show that the shorter Lch can boost the drain current (ID) of n-JLDGVM and p-JLDGVM by approximately 68% and 70% respectively. The ID of the n-JLVDGM and p-JLVDGM could possibly boost up to 42% and 78% respectively as the Tp is scaled down from 11nm to 8nm. The channel doping (Nch) is also a critical parameter, affecting the electrical performance of both n-JLDGVM and p-JLDGVM in which 15% and 39% improvements are observed in their respective ID as the concentration level is increased from 1E18 to 9E18 atom/cm3. In addition, the adjustment of threshold voltage can be realized by varying the metal WF.
Analysis of FinFET based Low Power SRAM Cellijsrd.com
As CMOS electronic devices are continuously shrinking to nanometer regime, leads to increasing the consequences of short channel effects and variability due to the process parameters which lead to cause the reliability of the circuit as well as performance. To solve these issues of CMOS, FINFET is one of the promising and better technologies without sacrificing reliability and performance for its applications and the circuit design. Among the various embedded memory technologies, SRAM provides the highest performance along with low standby power consumption. In CMOS circuits, high leakage current in deep-submicron regimes is becoming a significant contributor to power dissipation due to reduction in threshold voltage, channel length, and gate oxide thickness. FinFET based SRAM design can be used as an alternative solution to the bulk devices. FinFET is suitable for Nano scale memory circuits design due to its reduced Short Channel Effects (SCE) and leakage current. As the impact of process variations become increasingly significant in ultra deep submicron technologies, FinFETs are becoming increasingly popular a contender for replacement of bulk FETs due to favorable device characteristics. The paper focuses on study of various design aspects of FinFET based SRAM.
IMPACT OF DEVICE PARAMETERS OF TRIPLE GATE SOI-FINFET ON THE PERFORMANCE OF C...VLSICS Design
This document summarizes a simulation-based study of the impact of device parameters on the performance of 22nm triple gate SOI FinFETs. Device parameters like fin width, fin height, and gate oxide thickness were varied and their effects on short channel effects, on-current, off-current, and gate leakage current were analyzed. It was found that increasing fin width and height improved on-current but also increased off-current and short channel effects. Reducing fin thickness lowered off-current, while reducing fin height decreased gate leakage. The performance and static power of a CMOS inverter built using the FinFETs was also evaluated.
Dual Metal Gate and Conventional MOSFET at Sub nm for Analog ApplicationVLSICS Design
This document summarizes a study comparing a conventional MOSFET and dual metal gate (DMG) MOSFET at the 30nm technology node. Simulations were performed using Silvaco TCAD tools. Key results include:
1) The DMG MOSFET has a lower subthreshold slope and significantly lower gate leakage current compared to the conventional MOSFET.
2) Mobility and transconductance are higher in the DMG MOSFET, indicating better performance for analog applications that require high gain.
3) The DMG MOSFET has a higher intrinsic delay, making it more suitable for applications operated at lower voltages such as filters and sample-and-hold circuits, where gate
A Study On Double Gate Field Effect Transistor For Area And Cost Efficiencypaperpublications3
Abstract: Proposal for a field effect transistor had been presented, with numerical device simulations to verify the title in every manner possible. The two transitional field effect transistors like pMOS and nMOS functions are simultaneously performed, working as one or as the other according to the voltage applied to the gate terminal. Increase in the circuit speed is observed when this technology is implemented on the device suggested with respect to the standard CMOS technology, presented a drastic reduction of number devices and associated parasitic capacitances. In addition to it IC obtained with the proposed device are fully compatible with the standard CMOS technology and the fabrication processes. Fabrication of Static Ram cells with three transistors only with minimum dimensions and a single bit line by saving silicon area and increasing the memory performance with respect to standard CMOS technologies. It is also presented that the fully compatible CMOS process can be used to successfully manufacture the new FET structure.
LINEARITY AND ANALOG PERFORMANCE ANALYSIS OF DOUBLE GATE TUNNEL FET: EFFECT O...VLSICS Design
The linearity and analog performance of a Silicon Double Gate Tunnel Field Effect Transistor (DG-TFET) is investigated and the impact of elevated temperature on the device performance degradation has been studied. The impact on the device performance due to the rise in temperature and a gate stack (GS) architecture has also been investigated for the case of Silicon DG-MOSFET and a comparison with DGTFET is made. The parameters overning the analog performance and linearity have been studied, and high frequency simulations are carried out to determine the cut-off frequency of the device and its temperature dependence.
ULTRA HIGH SPEED FACTORIAL DESIGN IN SUB-NANOMETER TECHNOLOGYcscpconf
This work proposes a high speed and low power factorial design in 22nm technology and also it counts the effect of sub nano-meter constraints on this circuit. A comparative study for this
design has been done for 90nm, 45nm and 22nm technology. The rise in circuit complexity and speed is accompanied by the scaling of MOSFET’s. The transistor saturation current Idsat is an important parameter because the transistor current determines the time needed to charge and discharge the capacitive loads on chip, and thus impacts the product speed more than any other transistor parameter. The efficient implementation of a factorial number is carried out by using
a decremented and multipliers which has been lucidly discussed in this paper. Normally in a factorial module a number is calculated as the iterative multiplication of the given number to
the decremented value of the given number. A Parallel adder based decremented has been proposed for calculating the factorial of any number that also includes 0 and 1. The
performances are calculated by using the existing 90-nm CMOS technology and scaling down the existing technology to 45-nm and 22-nm.
DC performance analysis of a 20nm gate length n-type Silicon GAA junctionless...IJECEIAES
This summary provides the key details about the document in 3 sentences:
The document analyzes the DC performance of a 20nm gate length n-type silicon gate-all-around junctionless transistor using 3D quantum transport modeling. Simulation results show the device has a threshold voltage of 0.55V, subthreshold slope of 63mV/decade approaching the ideal value, an on/off current ratio of 10e+10, and a drain-induced barrier lowering of 98mV/V. Overall, the junctionless gate-all-around transistor shows improved short channel effects compared to an inversion-mode gate-all-around transistor.
Geometric and process design of ultra-thin junctionless double gate vertical ...IJECEIAES
The junctionless MOSFET architectures appear to be attractive in realizing the Moore’s law prediction. In this paper, a comprehensive 2-D simulation on junctionless vertical double-gate MOSFET (JLDGVM) under geometric and process consideration was introduced in order to obtain excellent electrical characteristics. Geometrical designs such as channel length (Lch) and pillar thickness (Tp) were considered and the impact on the electrical performance was analyzed. The influence of doping concentration and metal gate work function (WF) were further investigated for achieving better performance. The results show that the shorter Lch can boost the drain current (ID) of n-JLDGVM and p-JLDGVM by approximately 68% and 70% respectively. The ID of the n-JLVDGM and p-JLVDGM could possibly boost up to 42% and 78% respectively as the Tp is scaled down from 11nm to 8nm. The channel doping (Nch) is also a critical parameter, affecting the electrical performance of both n-JLDGVM and p-JLDGVM in which 15% and 39% improvements are observed in their respective ID as the concentration level is increased from 1E18 to 9E18 atom/cm3. In addition, the adjustment of threshold voltage can be realized by varying the metal WF.
Analysis of FinFET based Low Power SRAM Cellijsrd.com
As CMOS electronic devices are continuously shrinking to nanometer regime, leads to increasing the consequences of short channel effects and variability due to the process parameters which lead to cause the reliability of the circuit as well as performance. To solve these issues of CMOS, FINFET is one of the promising and better technologies without sacrificing reliability and performance for its applications and the circuit design. Among the various embedded memory technologies, SRAM provides the highest performance along with low standby power consumption. In CMOS circuits, high leakage current in deep-submicron regimes is becoming a significant contributor to power dissipation due to reduction in threshold voltage, channel length, and gate oxide thickness. FinFET based SRAM design can be used as an alternative solution to the bulk devices. FinFET is suitable for Nano scale memory circuits design due to its reduced Short Channel Effects (SCE) and leakage current. As the impact of process variations become increasingly significant in ultra deep submicron technologies, FinFETs are becoming increasingly popular a contender for replacement of bulk FETs due to favorable device characteristics. The paper focuses on study of various design aspects of FinFET based SRAM.
Design of Nanoscale 3-T DRAM using FinFETIOSR Journals
This document describes the design of a 3-transistor (3T) dynamic random access memory (DRAM) cell using both CMOS and FinFET technologies at the 32nm node. Simulation results show that the FinFET-based DRAM cell has lower average power (9.5136uW vs 10.869uW), lower power dissipation (144.7353uW vs 235.2313uW), and much lower leakage power (2.4303nW vs 1.8781uW) compared to the CMOS-based cell. FinFET devices are able to better control short channel effects at small scales compared to planar CMOS, enabling lower power DRAM designs. The document provides
Performance analysis of ultrathin junctionless double gate vertical MOSFETsjournalBEEI
This document summarizes a study that analyzes the performance of ultrathin junctionless double gate vertical MOSFETs (JLDGVM) and compares them to conventional junctioned double gate vertical MOSFETs (JDGVM) through process and device simulation. The simulation results show that the drain current (ID) of n-type and p-type JLDGVM is enhanced by 57% and 60% respectively compared to JDGVM. Additionally, JLDGVM exhibit a larger ION/IOFF ratio and smaller subthreshold slope, implying better power consumption and faster switching capability than JDGVM. The junctionless configuration eliminates challenges associated with forming ultra-shallow junctions between the source/
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
This document discusses the design and analysis of SRAM cells using tunneling field-effect transistors (TFETs) for ultralow-voltage operation. It analyzes the characteristics of TFET devices that impact SRAM performance, such as delayed saturation and broad crossover regions. Several published TFET SRAM cell designs are evaluated using technology computer-aided design simulations. The simulations show that the unidirectional conduction of TFETs degrades write stability. A novel 7-transistor driverless TFET SRAM cell is proposed to improve read, write, and hold stability through decoupled read paths and asymmetrical write-assist techniques.
one of the famous Silicon Valley golden rules which state “Higher the clock frequency, Greater the power consumption”. Digging deep into deep submicron CMOS technology, there are design and power management challenges present for Analog and Mixed Signal devices such as PLL and it is very much important to optimize PLL to create a successful and power optimized system. Here, ALF CP PLL is designed in a way that it can operate on low supply voltage but with a 20% reduction in the overall power consumption. The PLL output frequency can be tuned from 80 MHz to 330 MHz and at 350 MHz PLL consumes 190μW at 1V of supply.
Performance Comparison of CMOS and Finfet Based Circuits At 45nm Technology U...IJERA Editor
According to the Moore’s Law, the number of transistors in a unit chip area double every two years. But the existing technology of integrated circuit formation is posing limitations to this law. CMOS technology shows certain limitations as the device is reduced more and more in the nanometer regime out of which power dissipation is an important issue. FinFET is evolving to be a promising technology in this regard. This paper aims to analyze and compare the characteristics of CMOS and FinFET circuits at 45nm technology. Inverter circuit is implemented in order to study the basic characteristics such as voltage transfer characteristics, leakage current and power dissipation. Further the efficiency of FinFET to reduce power as compared to CMOS is proved using SRAM circuit. The results show that the average power is reduced by 92.93% in read operation and by 97.8% in write operation.
Electrical characterization of si nanowire GAA-TFET based on dimensions downs...IJECEIAES
This research paper explains the effect of the dimensions of Gate-all-around Si nanowire tunneling field effect transistor (GAA Si-NW TFET) on ON/OFF current ratio, drain induces barrier lowering (DIBL), sub-threshold swing (SS), and threshold voltage (V T ). These parameters are critical factors of the characteristics of tunnel field effect transistors. The Silvaco TCAD has been used to study the electrical characteristics of Si-NW TFET. Output (gate voltage-drain current) characteristics with channel dimensions were simulated. Results show that 50nm long nanowires with 9nm-18nm diameter and 3nm oxide thickness tend to have the best nanowire tunnel field effect transistor (Si-NW TFET) characteristics.
High Performance and Low power VLSI CMOS Circuit Designs using ONOFIC Approach IJERA Editor
Leakage power dissipation a major concern for scaling down portable devices. Improving high performance with reduced power consumption and chip area are the main constraint for designing VLSI CMOS circuits. In this paper, high performance and low power ONOFIC approach for VLSI CMOS circuits have been implemented. Mostly the concentrated part in deep sub micron regime is the power dissipation. Many techniques have been proposed for reducing leakage current in deep sub micron but with some limitations they are not suitable for actual requirements. Here we discussed two techniques named LECTOR & ONOFIC. The proposed On/Off Logic (ONOFIC) serves the needs for deep sub micron with its reduced power dissipation and increased performance in VLSI circuits. Thus the proposed ONOFIC approach results have been compared with the LECTOR technique and observed that the proposed technique improves the performance and reduce the power dissipation.
IJRET : International Journal of Research in Engineering and Technology is an international peer reviewed, online journal published by eSAT Publishing House for the enhancement of research in various disciplines of Engineering and Technology. The aim and scope of the journal is to provide an academic medium and an important reference for the advancement and dissemination of research results that support high-level learning, teaching and research in the fields of Engineering and Technology. We bring together Scientists, Academician, Field Engineers, Scholars and Students of related fields of Engineering and Technology
Deterioration of short channel effectsijistjournal
This document presents an analytical model for surface potential and electric field in a novel dual halo triple material surrounding gate (DH-TMSG) MOSFET structure. The DH-TMSG incorporates symmetrical dual halo regions near the source and drain, and a triple material gate. The analytical model uses a parabolic approximation method and boundary conditions to derive expressions for surface potential. Simulation results show that the DH-TMSG design significantly reduces short channel effects by producing peaks and steps in the surface potential and electric field profiles through the channel. This improves carrier transport and device performance compared to other multi-gate structures.
This chapter discusses radio frequency integrated circuit design using nanoscale double-gate MOSFETs (DG-MOSFETs). It provides background on the advantages of DG-MOSFETs for digital and RF applications due to their ability to control short channel effects and reduce leakage currents. Simulation results showing the tunable threshold voltage of n-type DG-MOSFETs with varying back-gate bias are presented to validate compact models from Arizona State University.
This document discusses techniques to reduce leakage current and power consumption in static random-access memory (SRAM) cells implemented using independent gate fin field-effect transistors (FinFETs). It first describes the independent gate FinFET SRAM cell design and its advantages over other designs. It then examines two circuit-level leakage reduction techniques: 1) using multi-threshold voltages by connecting high-threshold transistors to reduce leakage when in standby mode, and 2) adding a gated power supply transistor to reduce leakage through stacking effects. Simulation results show that both techniques can reduce leakage current and power in the independent gate FinFET SRAM cell, with multi-threshold voltages providing better leakage control.
Performance analysis of gate misaligned tripleijistjournal
In the literature, the misalignment effects in a nanoscale MOSFET is analyzed for dual material Double
gate MOSFET. The analysis is used in the design criterion of the device. In this paper, a two dimensional
analytical model of gate misalignment effects in Triple Material Double Gate (TM-DG) MOSFET is
presented for the first time. The gate misalignment effect in the drain side is considered. Based on the
misaligned gate, the device is split in to six regions. The boundary conditions are obtained considering the
electric flux and the potential. The parameters are derived using region based approach. Parameters like
surface potential and electric field is studied. In general various methods like superposition method,
Fourier series method, Numerical methods are used to analyze the device. In our paper, the parabolic
approximation method is used for analytical modeling of TM-DG MOSFET since it is more accurate than
the other methods available in the literature. The results are simulated and compared with dual material
double gate MOSFET. The device performance is analyzed and it helps in the design scenario.
This document describes the design and analysis of a 4-bit Johnson counter using 16nm FinFET technology. FinFETs help address short channel effects in smaller transistors and reduce power consumption compared to conventional CMOS. The document first discusses the FinFET structure and manufacturing process. It then presents the design of a low-power single edge-triggered D flip-flop using FinFETs. A 4-bit Johnson counter is implemented using four of these D flip-flops in a ring configuration. Simulation results show the FinFET D flip-flop consumes less power and the Johnson counter has lower power and area compared to designs using traditional flip-flops.
Optimization of Threshold Voltage for 65nm PMOS Transistor using Silvaco TCAD...IOSR Journals
This document summarizes research optimizing the threshold voltage (VTH) for a 65nm PMOS transistor using Silvaco TCAD simulation tools. The researchers varied three fabrication factors - gate oxide thickness, channel doping concentration, and channel implantation concentration - in the simulation. The simulation results showed a VTH value of -2.55427V for a 65nm PMOS transistor with a gate oxide thickness of 0.0025um, boron channel doping of 2x1015, and phosphorus implantation of 3.5x1013 atom/cm-1. Thicker gate oxides, higher channel doping, and increased implantation concentrations each caused higher VTH values in the simulation, consistent with theoretical expectations.
Comparative analysis of technology advancement from single gate to multi gate...eSAT Journals
Abstract
Among the entire contender in modern microelectronics,DG-MOSFET is a front line runner in planar technology. Itsunique
structure allows scaling the device at sub-nanometer region and mimicking the electrical characteristics of a MOSFET.Here
simulation of NMOS, SOI-NMOS, and DG-NMOS is presentedand relative comparison among short channel characteristics
ispresented.It has been seen that among all the above stated device, DG-MOSFET possess better immune to leakage current with
betterDIBL, whereas SOI MOSFET have better driving capacity.
KeyWords:SOI-MOSFET, DG-MOSFET, UTB, DIBL,SCEs
Surface Traping in Silicon Nanowire Dual material engineered Cylindrical gate...IJARTES
In this paper, the effect of gate field screening by surface
trap charges are studied using COMSOL 5.0. A nano wire
dual material Cylindrical gate (DMCG) MOSFET is
modeled and shift of turn on voltage due to the screening
effect is computed. It is shown that DMCG design increase
the drain current enhancement .However here the concept
of work function difference also present in term of gate bias
and comprehensive study of short channel effect of DMCG
has been focused .The objective of this paper is focus on
Current vs Gate voltage, Energy Band diagram,
CurrentDensity, electron and hole concentration and
Electric field when MOSFET is turn on. It is also examined
that Cylindrical MOSFET the minimum surface potential in
the channel reduces which resulting increasing in electron
velocity and thereby improving carrier transport efficiency.
As the size of IC is scale down to below 90nm cmos than the variation in process can not be ignored and it plays an important factor not only in the functioning of IC but also the testing of IC . This presentation starts with problem of test escapes due to process variation and then presents techniques employed by researchers to tackle this problem
Welcome to International Journal of Engineering Research and Development (IJERD)IJERD Editor
This document discusses how different gate dielectric materials affect the threshold voltage of nanoscale MOSFETs. Simulations were conducted using MATLAB and SCHRED software to obtain C-V characteristics for MOSCAP structures with different dielectric materials (PTFE, Polyethylene, SiO2) and thicknesses. Threshold voltages were extracted from the C-V curves using classical, semi-classical, and quantum mechanical models. The results show that lower dielectric constant materials like PTFE reduce threshold voltage more than higher k materials like SiO2. PTFE is suggested as a suitable low-k material for developing MOSFETs and interconnects at the nanoscale.
This document summarizes research on scaling limits of CMOS devices and proposed structures to overcome these limits. It first discusses how quantum mechanical effects and short channel effects become problematic as devices are scaled down, limiting further scaling. It then reviews various structures proposed by other researchers, including fully depleted SOI MOSFETs with strained silicon channels, dual material gates, and gate-all-around structures. Finally, it proposes a new structure combining these elements: a fully depleted SOI gate-all-around MOSFET using a strained silicon channel and dual material gate to address scaling challenges while improving performance.
This document summarizes the double-gate MOSFET transistor. It begins by describing the basic operation of a single-gate MOSFET and then discusses the scaling limitations of bulk MOSFETs, such as decreasing carrier mobility and threshold voltage rolloff as channel length decreases. It introduces the double-gate MOSFET as a way to better control the channel and reduce short-channel effects. Key features of the double-gate MOSFET include two gates that control the ultra-thin body channel and allow direct scaling to small channel lengths of 20nm or less. Fabricating double-gate MOSFETs using a silicon-on-insulator approach provides benefits like low leakage currents. The double gates provide improved performance
Seminar presentation made by me for the topic of 'Resources for Sentiment Analysis' at IIT Bombay. Includes a set of bonus slides for additional information which was not actually presented.
Design of Nanoscale 3-T DRAM using FinFETIOSR Journals
This document describes the design of a 3-transistor (3T) dynamic random access memory (DRAM) cell using both CMOS and FinFET technologies at the 32nm node. Simulation results show that the FinFET-based DRAM cell has lower average power (9.5136uW vs 10.869uW), lower power dissipation (144.7353uW vs 235.2313uW), and much lower leakage power (2.4303nW vs 1.8781uW) compared to the CMOS-based cell. FinFET devices are able to better control short channel effects at small scales compared to planar CMOS, enabling lower power DRAM designs. The document provides
Performance analysis of ultrathin junctionless double gate vertical MOSFETsjournalBEEI
This document summarizes a study that analyzes the performance of ultrathin junctionless double gate vertical MOSFETs (JLDGVM) and compares them to conventional junctioned double gate vertical MOSFETs (JDGVM) through process and device simulation. The simulation results show that the drain current (ID) of n-type and p-type JLDGVM is enhanced by 57% and 60% respectively compared to JDGVM. Additionally, JLDGVM exhibit a larger ION/IOFF ratio and smaller subthreshold slope, implying better power consumption and faster switching capability than JDGVM. The junctionless configuration eliminates challenges associated with forming ultra-shallow junctions between the source/
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
This document discusses the design and analysis of SRAM cells using tunneling field-effect transistors (TFETs) for ultralow-voltage operation. It analyzes the characteristics of TFET devices that impact SRAM performance, such as delayed saturation and broad crossover regions. Several published TFET SRAM cell designs are evaluated using technology computer-aided design simulations. The simulations show that the unidirectional conduction of TFETs degrades write stability. A novel 7-transistor driverless TFET SRAM cell is proposed to improve read, write, and hold stability through decoupled read paths and asymmetrical write-assist techniques.
one of the famous Silicon Valley golden rules which state “Higher the clock frequency, Greater the power consumption”. Digging deep into deep submicron CMOS technology, there are design and power management challenges present for Analog and Mixed Signal devices such as PLL and it is very much important to optimize PLL to create a successful and power optimized system. Here, ALF CP PLL is designed in a way that it can operate on low supply voltage but with a 20% reduction in the overall power consumption. The PLL output frequency can be tuned from 80 MHz to 330 MHz and at 350 MHz PLL consumes 190μW at 1V of supply.
Performance Comparison of CMOS and Finfet Based Circuits At 45nm Technology U...IJERA Editor
According to the Moore’s Law, the number of transistors in a unit chip area double every two years. But the existing technology of integrated circuit formation is posing limitations to this law. CMOS technology shows certain limitations as the device is reduced more and more in the nanometer regime out of which power dissipation is an important issue. FinFET is evolving to be a promising technology in this regard. This paper aims to analyze and compare the characteristics of CMOS and FinFET circuits at 45nm technology. Inverter circuit is implemented in order to study the basic characteristics such as voltage transfer characteristics, leakage current and power dissipation. Further the efficiency of FinFET to reduce power as compared to CMOS is proved using SRAM circuit. The results show that the average power is reduced by 92.93% in read operation and by 97.8% in write operation.
Electrical characterization of si nanowire GAA-TFET based on dimensions downs...IJECEIAES
This research paper explains the effect of the dimensions of Gate-all-around Si nanowire tunneling field effect transistor (GAA Si-NW TFET) on ON/OFF current ratio, drain induces barrier lowering (DIBL), sub-threshold swing (SS), and threshold voltage (V T ). These parameters are critical factors of the characteristics of tunnel field effect transistors. The Silvaco TCAD has been used to study the electrical characteristics of Si-NW TFET. Output (gate voltage-drain current) characteristics with channel dimensions were simulated. Results show that 50nm long nanowires with 9nm-18nm diameter and 3nm oxide thickness tend to have the best nanowire tunnel field effect transistor (Si-NW TFET) characteristics.
High Performance and Low power VLSI CMOS Circuit Designs using ONOFIC Approach IJERA Editor
Leakage power dissipation a major concern for scaling down portable devices. Improving high performance with reduced power consumption and chip area are the main constraint for designing VLSI CMOS circuits. In this paper, high performance and low power ONOFIC approach for VLSI CMOS circuits have been implemented. Mostly the concentrated part in deep sub micron regime is the power dissipation. Many techniques have been proposed for reducing leakage current in deep sub micron but with some limitations they are not suitable for actual requirements. Here we discussed two techniques named LECTOR & ONOFIC. The proposed On/Off Logic (ONOFIC) serves the needs for deep sub micron with its reduced power dissipation and increased performance in VLSI circuits. Thus the proposed ONOFIC approach results have been compared with the LECTOR technique and observed that the proposed technique improves the performance and reduce the power dissipation.
IJRET : International Journal of Research in Engineering and Technology is an international peer reviewed, online journal published by eSAT Publishing House for the enhancement of research in various disciplines of Engineering and Technology. The aim and scope of the journal is to provide an academic medium and an important reference for the advancement and dissemination of research results that support high-level learning, teaching and research in the fields of Engineering and Technology. We bring together Scientists, Academician, Field Engineers, Scholars and Students of related fields of Engineering and Technology
Deterioration of short channel effectsijistjournal
This document presents an analytical model for surface potential and electric field in a novel dual halo triple material surrounding gate (DH-TMSG) MOSFET structure. The DH-TMSG incorporates symmetrical dual halo regions near the source and drain, and a triple material gate. The analytical model uses a parabolic approximation method and boundary conditions to derive expressions for surface potential. Simulation results show that the DH-TMSG design significantly reduces short channel effects by producing peaks and steps in the surface potential and electric field profiles through the channel. This improves carrier transport and device performance compared to other multi-gate structures.
This chapter discusses radio frequency integrated circuit design using nanoscale double-gate MOSFETs (DG-MOSFETs). It provides background on the advantages of DG-MOSFETs for digital and RF applications due to their ability to control short channel effects and reduce leakage currents. Simulation results showing the tunable threshold voltage of n-type DG-MOSFETs with varying back-gate bias are presented to validate compact models from Arizona State University.
This document discusses techniques to reduce leakage current and power consumption in static random-access memory (SRAM) cells implemented using independent gate fin field-effect transistors (FinFETs). It first describes the independent gate FinFET SRAM cell design and its advantages over other designs. It then examines two circuit-level leakage reduction techniques: 1) using multi-threshold voltages by connecting high-threshold transistors to reduce leakage when in standby mode, and 2) adding a gated power supply transistor to reduce leakage through stacking effects. Simulation results show that both techniques can reduce leakage current and power in the independent gate FinFET SRAM cell, with multi-threshold voltages providing better leakage control.
Performance analysis of gate misaligned tripleijistjournal
In the literature, the misalignment effects in a nanoscale MOSFET is analyzed for dual material Double
gate MOSFET. The analysis is used in the design criterion of the device. In this paper, a two dimensional
analytical model of gate misalignment effects in Triple Material Double Gate (TM-DG) MOSFET is
presented for the first time. The gate misalignment effect in the drain side is considered. Based on the
misaligned gate, the device is split in to six regions. The boundary conditions are obtained considering the
electric flux and the potential. The parameters are derived using region based approach. Parameters like
surface potential and electric field is studied. In general various methods like superposition method,
Fourier series method, Numerical methods are used to analyze the device. In our paper, the parabolic
approximation method is used for analytical modeling of TM-DG MOSFET since it is more accurate than
the other methods available in the literature. The results are simulated and compared with dual material
double gate MOSFET. The device performance is analyzed and it helps in the design scenario.
This document describes the design and analysis of a 4-bit Johnson counter using 16nm FinFET technology. FinFETs help address short channel effects in smaller transistors and reduce power consumption compared to conventional CMOS. The document first discusses the FinFET structure and manufacturing process. It then presents the design of a low-power single edge-triggered D flip-flop using FinFETs. A 4-bit Johnson counter is implemented using four of these D flip-flops in a ring configuration. Simulation results show the FinFET D flip-flop consumes less power and the Johnson counter has lower power and area compared to designs using traditional flip-flops.
Optimization of Threshold Voltage for 65nm PMOS Transistor using Silvaco TCAD...IOSR Journals
This document summarizes research optimizing the threshold voltage (VTH) for a 65nm PMOS transistor using Silvaco TCAD simulation tools. The researchers varied three fabrication factors - gate oxide thickness, channel doping concentration, and channel implantation concentration - in the simulation. The simulation results showed a VTH value of -2.55427V for a 65nm PMOS transistor with a gate oxide thickness of 0.0025um, boron channel doping of 2x1015, and phosphorus implantation of 3.5x1013 atom/cm-1. Thicker gate oxides, higher channel doping, and increased implantation concentrations each caused higher VTH values in the simulation, consistent with theoretical expectations.
Comparative analysis of technology advancement from single gate to multi gate...eSAT Journals
Abstract
Among the entire contender in modern microelectronics,DG-MOSFET is a front line runner in planar technology. Itsunique
structure allows scaling the device at sub-nanometer region and mimicking the electrical characteristics of a MOSFET.Here
simulation of NMOS, SOI-NMOS, and DG-NMOS is presentedand relative comparison among short channel characteristics
ispresented.It has been seen that among all the above stated device, DG-MOSFET possess better immune to leakage current with
betterDIBL, whereas SOI MOSFET have better driving capacity.
KeyWords:SOI-MOSFET, DG-MOSFET, UTB, DIBL,SCEs
Surface Traping in Silicon Nanowire Dual material engineered Cylindrical gate...IJARTES
In this paper, the effect of gate field screening by surface
trap charges are studied using COMSOL 5.0. A nano wire
dual material Cylindrical gate (DMCG) MOSFET is
modeled and shift of turn on voltage due to the screening
effect is computed. It is shown that DMCG design increase
the drain current enhancement .However here the concept
of work function difference also present in term of gate bias
and comprehensive study of short channel effect of DMCG
has been focused .The objective of this paper is focus on
Current vs Gate voltage, Energy Band diagram,
CurrentDensity, electron and hole concentration and
Electric field when MOSFET is turn on. It is also examined
that Cylindrical MOSFET the minimum surface potential in
the channel reduces which resulting increasing in electron
velocity and thereby improving carrier transport efficiency.
As the size of IC is scale down to below 90nm cmos than the variation in process can not be ignored and it plays an important factor not only in the functioning of IC but also the testing of IC . This presentation starts with problem of test escapes due to process variation and then presents techniques employed by researchers to tackle this problem
Welcome to International Journal of Engineering Research and Development (IJERD)IJERD Editor
This document discusses how different gate dielectric materials affect the threshold voltage of nanoscale MOSFETs. Simulations were conducted using MATLAB and SCHRED software to obtain C-V characteristics for MOSCAP structures with different dielectric materials (PTFE, Polyethylene, SiO2) and thicknesses. Threshold voltages were extracted from the C-V curves using classical, semi-classical, and quantum mechanical models. The results show that lower dielectric constant materials like PTFE reduce threshold voltage more than higher k materials like SiO2. PTFE is suggested as a suitable low-k material for developing MOSFETs and interconnects at the nanoscale.
This document summarizes research on scaling limits of CMOS devices and proposed structures to overcome these limits. It first discusses how quantum mechanical effects and short channel effects become problematic as devices are scaled down, limiting further scaling. It then reviews various structures proposed by other researchers, including fully depleted SOI MOSFETs with strained silicon channels, dual material gates, and gate-all-around structures. Finally, it proposes a new structure combining these elements: a fully depleted SOI gate-all-around MOSFET using a strained silicon channel and dual material gate to address scaling challenges while improving performance.
This document summarizes the double-gate MOSFET transistor. It begins by describing the basic operation of a single-gate MOSFET and then discusses the scaling limitations of bulk MOSFETs, such as decreasing carrier mobility and threshold voltage rolloff as channel length decreases. It introduces the double-gate MOSFET as a way to better control the channel and reduce short-channel effects. Key features of the double-gate MOSFET include two gates that control the ultra-thin body channel and allow direct scaling to small channel lengths of 20nm or less. Fabricating double-gate MOSFETs using a silicon-on-insulator approach provides benefits like low leakage currents. The double gates provide improved performance
Seminar presentation made by me for the topic of 'Resources for Sentiment Analysis' at IIT Bombay. Includes a set of bonus slides for additional information which was not actually presented.
This document summarizes a thesis analyzing stress concentrations around doors and windows on the Boeing 787 aircraft under uniform shear loading. It presents analytical solutions using complex variable and Schwarz alternating techniques to model openings as rectangular holes in an infinite plate. Finite element analysis is also conducted and results show good agreement with analytical solutions. Stress concentrations are highest at corners and depend on geometry. Door and window interaction increases window stresses up to 4.8% but negligibly impacts door stresses.
FINFET is a type of non-planar transistor with a conducting channel that is wrapped by a thin silicon fin. It was developed to overcome short channel effects seen in planar MOSFETs as transistors continue to shrink. Key aspects of FINFETs include the fin structure which allows gate control of the channel from both sides and the top, reducing leakage currents. Fabrication involves depositing fins and wrapping a gate material around them. FINFETs have been shown to effectively suppress short channel effects even at very small gate lengths, but come with increased manufacturing complexity and potential reliability issues compared to planar transistors.
Modelled and Analysed the watershed Dynamics in Mahanadi River Basin. Finally came up with watershed Management Plan to minimise the future LUCC in Mahanadi River Basin
Rich Internet Web Application Development using Google Web ToolkitIJERA Editor
Web applications in today’s world has a great impact on businesses and are popular since they provide business benefits and hugely deployable. Developing such efficient web applications using leading edge web technologies that promise to deliver upgraded user interface, greater scalability and interoperability, improved performance and usability, among different systems is a challenge. Google Web Toolkit (GWT) is one such framework that helps to build Rich Internet Applications (RIAs) that enable fertile development of high performance web applications. This paper puts an effort to provide an effective solution to develop quality web based applications with an added layer of security.
Rule-based Prosody Calculation for Marathi Text-to-Speech SynthesisIJERA Editor
This document summarizes research on rule-based prosody calculation for Marathi text-to-speech synthesis. It presents two studies: 1) an analysis of a Marathi corpus to examine the influence of syntax, information status, and other linguistic factors on prosody, and 2) a listening test to further investigate the prosodic realization of constituents depending on their information status. The results were used to improve prosody prediction in the Marathi text-to-speech synthesis system MARY. The analysis found some assumptions from literature held true for Marathi prosody while others did not. The listening test suggested constituents are always preferred to be accented in Marathi for both new and given information.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
A Literature Review on Lean Implementations – A comprehensive summaryIJERA Editor
The available research papers in area of Lean are studied to know the implementation level of different lean
tools, barrier and benefits of implementation are also considered in the review .The commonly used lean tools in
the various organization, most common barriers and benefits have been identified and listed in this paper. Most
common barrier are also components of quality of work life.
A mathematical modeling proposal for a Multiple Tasks Periodic Capacitated Ar...IJERA Editor
The countless accidents and incidents occurred at dams at the last years, propelled the development of politics
related with dams safety. One of the strategies is related to the plan for instrumentation and monitoring of dams.
The monitoring demands from the technical team the reading of the auscultation data, in order to periodically
monitor the dam. The monitoring plan of the dam can be modeled as a problem of mathematical program of the
periodical capacitated arcs routing program (PCARP). The PCARP is considered as a generalization of the
classic problem of routing in capacitated arcs (CARP) due to two characteristics: 1) Planning period larger than
a time unity, as that vehicle make several travels and; 2) frequency of associated visits to the arcs to be serviced
over the planning horizon. For the dam's monitoring problem studied in this work, the frequent visits, along the
time horizon, it is not associated to the arc, but to the instrument with which is intended to collect the data.
Shows a new problem of Multiple tasks Periodic Capacitated Arc Routing Problem and its elaboration as an
exact mathematical model. The new main characteristics presented are: multiple tasks to be performed on each
edge or edges; different frequencies to accomplish each of the tasks; heterogeneous fleet; and flexibility for
more than one vehicle passing through the same edge at the same day. The mathematical model was
implemented and examples were generated randomly for the proposed model's validation.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
This document presents a method for updating the memory table of a distributed arithmetic (DA) adaptive FIR filter without compromising convergence speed or requiring additional memory resources. DA reduces computational workload by precomputing and storing filter coefficient sums in a lookup table (LUT). However, updating the table is challenging for adaptive filters. The proposed method exploits temporal locality and subexpression sharing to fully update the table with each new sample. It reduces computations and maintains fast convergence. The method enables efficient implementation of computationally-intensive discrete wavelet transforms using DA's parallel architecture and maximal LUT utilization. Simulation results show the discrete wavelet transform can be computed with high LUT utilization using this adaptive DA filter design.
Fast Computational Four-Neighborhood Search Algorithm For Block matching Moti...IJERA Editor
The Motion estimation is an effective method for removing temporal redundancyfound in video sequence compression. Block Matching algorithm has been widely used in motion estimation and a number of fast algorithms have proposed to reduce the computational complexity of BMA. In this paper we propose a new search strategy for fast block matching based on Four-Neighborhood Search (FNS) and fast computational strategy, this new algorithm can significantly speed up the computation of the block matching by reducing the number of checked points and the time computational. Results have been shown that 89% to 93% of operations can be saved while maintaining the quality of video relative to full search algorithm.
This document describes an experiment using a least squares method to identify the dynamic model of a level control system in a didactic plant. The plant uses a Foundation Fieldbus communication protocol. The experiment applies a PRBS signal to excite the system and records the input and output signals. It then uses a non-recursive least squares estimator to identify the system and approximate its behavior with a second order transfer function. The results showed that the identification technique was able to accurately model the dynamic response of the level control loop.
A Review and study of the design technique of Microstrip Patch Antenna Techno...IJERA Editor
In this paper,study and survey of microstrip antenna elements is presented, with emphasis on theoretical and
practical design techniques and material used, as previous study have been proved that material used play
significant role in the performance such as gain ,directivity ,frequency of radiation Available substrate materials
are reviewed along with the relation between dielectric constant tolerance and resonant frequency of microstrip
patches. Several theoretical analysis techniques are summarized. Practical procedures are given for both
standard rectangular and circular patches. The quality, bandwidth, and efficiency factors of typical patch designs
are discussed.
The document discusses using Haar wavelets to solve optimal control problems numerically. It begins by explaining the limitations of indirect methods for solving optimal control problems and advantages of direct methods. It then provides background on wavelet theory, describing different types of wavelets and their properties. Haar wavelets are discussed as being useful for solving variational problems by reducing differential equations to algebraic equations. The document concludes that the Haar wavelet approach provides an effective numerical method for solving variational and optimal control problems compared to other existing techniques.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
The document summarizes a study that assessed the phytotoxic effects of silver nanoparticles on two crop plant species: Vigna radiata and Brassica campestris. Seedlings of both plants were exposed to various concentrations of silver nanoparticles and silver ions for 12 days. Exposure to higher concentrations (500-1000 μg/mL) resulted in inhibited seedling growth in both plant species compared to controls. Analysis using XRD, FTIR and SEM revealed the presence and localization of silver nanoparticles in the plant roots, with particles adhering to root surfaces or being taken up into epidermal root cells. The study provides evidence that silver nanoparticles can negatively impact the growth of important crop plants like mung bean and field mustard.
Investigation and design of ion-implanted MOSFET based on (18 nm) channel lengthTELKOMNIKA JOURNAL
The aim of this study is to invistgate the characteristics of Si-MOSFET with 18 nm length of ion implemented channel. Technology computer aided design (TCAD) tool from Silvaco was used to simulate the MOSFET’s designed structure in this research. The results indicate that the MOSFET with 18 nm channel length has cut-off frequency of 548 GHz and transconductance of 967 μS, which are the most important factors in calculating the efficiency and improving the performance of the device. Also, it has threshold voltage of (-0.17 V) in addition obtaining a relatively small DIBL (55.11 mV/V). The subthreshold slope was in high value of 307.5 mV/dec. and this is one of the undesirable factors for the device results by short channel effect, but it does not reduce its performance and efficiency in general.
This document discusses surround gate MOSFETs as an approach to reduce short channel effects in transistors. It begins with an overview of MOSFET operation and Moore's Law. It then discusses the motivation to find alternatives to planar transistors as scaling limits are approached. Short channel effects in bulk MOSFETs are introduced as a major barrier to scaling. The document reviews SOI and multi-gate transistor technologies, such as double gate, tri-gate, and gate-all-around designs, as ways to better control the channel and reduce short channel effects. A new dual-material surround gate structure is proposed and its potential to further suppress short channel effects through gate material engineering is explained. Two-dimensional modeling of the new structure
Impact of Gate Length Modulation On a Al0.83Ga0.17N/GaN Dual Double Gate MOSH...IRJET Journal
This document discusses the simulation of an Al0.83Ga0.17N/GaN dual double gate MOSHEMT for radio frequency applications. It compares the performance of a dual double gate structure to a single double gate structure with varying gate lengths. The key findings are:
1) The drain current of the dual double gate MOSHEMT is 66.67% higher than the single double gate MOSHEMT.
2) The transconductance of the dual double gate MOSHEMT is approximately 16% higher.
3) The peak cutoff frequency reached 1766 GHz for the dual double gate MOSHEMT, indicating its potential for high frequency performance.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
Structural and Electrical Analysis of Various MOSFET DesignsIJERA Editor
Invention of Transistor is the foundation of electronics industry. Metal Oxide Semiconductor Field Effect Transistor (MOSFET) has been the key to the development of nano electronics technology. This paper offers a brief review of some of the most popular MOSFET structure designs. The scaling down of planar bulk MOSFET proposed by the Moore’s Law has been saturated due to short channel effects and DIBL. Due to this alternative approaches has been considered to overcome the problems at lower node technology. SOI and FinFET technologies are promising candidates in this area.
THRESHOLD VOLTAGE CONTROL SCHEMES IN FINFETSVLSICS Design
Conventionally polysilicon is used in MOSFETs for gate material. Doping of polysilicon and thus changing the workfunction is carried out to change the threshold voltage. Additionally polysilicon is not favourable as gate material for smaller dimensional devices because of its high thermal budget process and degradation due to the depletion of the doped polysilicon, thus metal gate is preferred over polysilicon. Control of workfunction in metal gate is a challenging task. The use of metal alloys as gate materials for variable gate workfunction has been already reported in literature. In this work various threshold voltage techniques has been analyzed and a novel aligned dual metal gate technique is proposed for threshold voltage control in FinFETs.
This document summarizes the performance enhancement and characterization of a junctionless vertical slit field effect transistor (JLVeSFET). Key findings from simulations include:
1) The JLVeSFET shows an optimized subthreshold slope of 65mV/decade and OFF current of ~10-18A/μm for a 50nm radius device with a high-k dielectric.
2) Using a high-k dielectric (Si3N4) instead of SiO2 increases the Ion/Ioff ratio to ~1011 and reduces the subthreshold slope to 63mV/decade.
3) Increasing the gate doping concentration reduces the subthreshold slope slightly while increasing the Ion/
This document discusses FinFET technology. It begins with an introduction to FinFETs, explaining that they are a type of double-gate CMOS that offers advantages over traditional CMOS for scaling to short gate lengths. It then discusses why FinFET technology is needed as traditional CMOS scaling faces challenges from subthreshold and gate leakage. It provides details on double-gate FET structure and operation, including how it controls short-channel effects better than single-gate FETs. It also covers FinFET features, applications, challenges and concludes that FinFETs can help continue CMOS scaling if key issues like fin patterning and gate work functions are addressed.
Microelectronic technology
This report briefly discusses the need for Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), their structure and principle of operation. Then it details the fabrication and characterization of the MOSFETs fabricated at the microelectronic lab at University of Malaya
shows the simulation and analysis of a MOSFET device using the MOSFet tool. Several powerful analytic features of this tool are demonstrated, including the following:
calculation of Id-Vg curves
potential contour plots along the device at equilibrium and at the final applied bias
electron density contour plots along the device at equilibrium and at the final applied bias
spatial doping profile along the device
1D spatial potential profile along the device
The impact of channel fin width on electrical characteristics of Si-FinFET IJECEIAES
This paper studies the impact of fin width of channel on temperature and electrical characteristics of fin field-effect transistor (FinFET). The simulation tool multi-gate field effect transistor (MuGFET) has been used to examine the FinFET characteristics. Transfer characteristics with various temperatures and channel fin width (W F =5, 10, 20, 40, and 80 nm) are at first simulated in this study. The results show that the increasing of environmental temperature tends to increase threshold voltage, while the subthreshold swing (SS) and drain-induced barrier lowering (DIBL) rise with rising working temperature. Also, the threshold voltage decreases with increasing channel fin width of transistor, while the SS and DIBL increase with increasing channel fin width of transistor, at minimum channel fin width, the SS is very near to the best and ideal then its value grows and going far from the ideal value with increasing channel fin width. So, according to these conditions, the minimum value as possible of fin width is the preferable one for FinFET with better electrical characteristics.
IRJET- Simulation of 10nm Double Gate MOSFET using Visual TCAD ToolIRJET Journal
The document summarizes the simulation of a 10nm double gate MOSFET using the Visual TCAD tool. Key points:
1) A 10nm double gate MOSFET structure was designed in Visual TCAD with silicon substrate, aluminum source/drain, and polysilicon gates separated by silicon dioxide.
2) Parameters like gate length, mesh sizes, and doping concentrations were defined for the simulation.
3) Short channel effects like DIBL and subthreshold slope were examined, as continuous scaling has degraded MOSFET characteristics and increased these effects.
4) The double gate structure was proposed to improve gate coupling and reduce short channel effects compared to conventional MOSFETs.
Impact of multiple channels on the Characteristics of Rectangular GAA MOSFET IJECEIAES
Square gate all around MOSFETs are a very promising device structures allowing to continue scaling due to their superior control over the short channel effects. In this work a numerical study of a square structure with single channel is compared to a structure with 4 channels in order to highlight the impact of channels number on the device’s DC parameters (drain current and threshold voltage). Our single channel rectangular GAA MOSFET showed reasonable ratio Ion/Ioff of 10 4 , while our four channels GAA MOSFET showed a value of 10 3 . In addition, a low value of drain induced barrier lowering (DIBL) of 60mV/V was obtained for our single channel GAA and a lower value of with 40mv/v has been obtained for our four channel one. Also, an extrinsic transconductance of 88ms/µm have been obtained for our four channels GAA compared to the single channel that is equal to 7ms/µm.
Physical Scaling Limits of FinFET Structure: A Simulation StudyVLSICS Design
This document summarizes a simulation study on the physical scaling limits of FinFET structures. It analyzes the scaling limits of double gate underlap and triple gate overlap FinFET structures using 2D and 3D computer simulations. Key findings include:
1) For double gate FinFETs, DIBL and SS increase abruptly when the ratio of gate length to fin thickness (L/Tfin) goes below 1.5, limiting scaling.
2) For triple gate FinFETs, both fin thickness and height can control short channel effects, but fin thickness is found to be a more dominant parameter. DIBL and SS increase as the ratio of effective gate length to fin thickness (Leff/Tfin) decreases
Physical Scaling Limits of FinFET Structure: A Simulation StudyVLSICS Design
In this work an attempt has been made to analyze the scaling limits of Double Gate (DG) underlap and Triple Gate (TG) overlap FinFET structure using 2D and 3D computer simulations respectively. To analyze the scaling limits of FinFET structure, simulations are performed using three variables: finthickness, fin-height and gate-length. From 2D simulation of DG FinFET, it is found that the gate-length (L) and fin-thickness (Tfin) ratio plays a key role while deciding the performance of the device. Drain Induced Barrier Lowering (DIBL) and Subthreshold Swing (SS) increase abruptly when (L/Tfin) ratio goes below 1.5. So, there will be a trade-off in between SCEs and on- current of the device since on-off current ratio is found to be high at small dimensions. From 3D simulation study on TG FinFET, It is found that both fin-thickness (Tfin) and fin-height (Hfin) can control the SCEs. However, Tfin is found to be more dominant parameter than Hfin while deciding the SCEs. DIBL and SS increase as (Leff/Tfin) ratio decreases. The (Leff/Tfin) ratio can be reduced below 1.5 unlike DG FinFET for the same SCEs. However,
as this ratio approaches to 1, the SCEs can go beyond acceptable limits for TG FinFET structure. The relative ratio of Hfin and Tfin should be maximum at a given Tfin and Leff to get maximum on-current per unit width. However, increasing Hfin degrades the fin stability and degrades SCEs.
Operational transconductance amplifier-based comparator for high frequency a...IJECEIAES
Fin field-effect transistor (FinFET) based analog circuits are gaining importance over metal oxide semiconductor field effect transistor (MOSFET) based circuits with stability and high frequency operations. Comparator that forms the sub block of most of the analog circuits is designed using operational transconductance amplifier (OTA). The OTA is designed using new design procedures and the comparator circuit is designed integrating the sub circuits with OTA. The building blocks of the comparator design such as input level shifter, differential pair with cascode stage and class AB amplifier for output swing are designed and integrated. Folded cascode circuit is used in the feedback path to maintain the common mode input value to a constant, so that the differential pair amplifies the differential signal. The gain of the comparator is achieved to be greater than 100 dB, with phase margin of 65°, common mode rejection ratio (CMRR) of above 70 dB and output swing from rail to rail. The circuit provides unity gain bandwidth of 5 GHz and is suitable for high sampling rate data converter circuits.
Growing endless demand for digital processing technology, to perform high speed computations with low power utilization and minimum propagation delay, the metal-oxide-semiconductor (MOS) technology is implemented in the areas of very large scale integrated (VLSI) circuit technology. But MOS technology is facing the challenges in linear scaling the transistors with different channel modelling for the present day microelectronic regime. Linear scaling of MOSFET is restricted through short-channel-effects (SCEs). Use of silicon N-channel double gate MOSFETs (DG MOSFETs) in present day microelectronic regime features the short channel effect of MOSFET through a reasonable forward transfer admittance with the characteristics of varying input capacitance values ratio. In this research paper, a distinct ρ-based model is designed to simulate SCEs through the designed silicon N-channel double gate MOSFETs with the varying front and back gate doping level and surface regions to estimate the varying junction capacitances can limit the intrusion detection systems (IDS) usage in VLSI applications. Analytical model for channel length and simulated model for total internal device capacitance through distinct ρ-based model are presented. The proposed distinct ρ-based model is suitable for silicon nanowire transistors and the effectiveness of the proposed model is validated through comparative results.
This document summarizes the evolution of LDMOS transistor technology for S-band radar applications over the last decade. Key improvements include a doubling of power density at 3.6 GHz to over 1 W/mm, and an increase in gain from 7 dB to 14 dB. The latest generation LDMOS devices outperform bipolar transistors at S-band frequencies, with gains over 5 dB higher and efficiencies 5-10% greater. 100W and 120W microwave products in the S-band demonstrate state-of-the-art performance with gains of 11-12 dB and efficiencies near 50%.
Optimization of 14 nm double gate Bi-GFET for lower leakage currentTELKOMNIKA JOURNAL
In recent years, breakthroughs in electronics technology have resulted in upgrades in the physical properties of the metal oxide semiconductor field effect transistor (MOSFET) toward smaller sizes and improvements in both quality and performance. Hence, the growth field effect transistor (GFET) is being promoted as one of the worthy contenders due to its superior material characteristics. A 14 nm horizontal double-gate bilayer graphene FET with a high-k/metal gate is proposed, which is composed of hafnium dioxide (HfO2) and tungsten silicide (WSix) respectively. It is simulated and modelled using silvaco ATHENA and ATLAS technology computer-aided design (TCAD) tools, as well as the Taguchi L9 orthogonal array (OA). The threshold voltage (VTH) adjustment implant dose, VTH adjustment implant energy, source/drain (S/D) implant dose, and S/D implant energy have all been investigated as process parameters. While the VTH adjustment tilt angle and the S/D implant tilt angle have both been investigated as noise factors. When compared to the initial findings before optimization, the IOFF has a value of 29.579 nA/µm, indicating a significant improvement. Findings from the optimization technique demonstrate excellent device performance with an IOFF of 28.564 nA/µm, which is closer to the international technology roadmap semiconductor (ITRS) 2013 target than before
Review on Tunnel Field Effect Transistors (TFET)IRJET Journal
The document discusses Tunnel Field Effect Transistors (TFETs) as a promising alternative to MOSFETs for low power applications. TFETs use band-to-band tunneling as the switching mechanism instead of thermionic emission like in MOSFETs, allowing TFETs to achieve subthreshold slopes lower than 60 mV/decade. The document reviews different TFET structures that have been proposed over time, including heterojunction TFETs that use different materials for the source and channel to facilitate band-to-band tunneling. TFETs are seen as important for continued device scaling as they can help reduce static and dynamic power consumption compared to conventional MOSFETs.
Similar to Design & Performance Analysis of DG-MOSFET for Reduction of Short Channel Effect over Bulk MOSFET at 20nm (20)
KuberTENes Birthday Bash Guadalajara - K8sGPT first impressionsVictor Morales
K8sGPT is a tool that analyzes and diagnoses Kubernetes clusters. This presentation was used to share the requirements and dependencies to deploy K8sGPT in a local environment.
Use PyCharm for remote debugging of WSL on a Windo cf5c162d672e4e58b4dde5d797...shadow0702a
This document serves as a comprehensive step-by-step guide on how to effectively use PyCharm for remote debugging of the Windows Subsystem for Linux (WSL) on a local Windows machine. It meticulously outlines several critical steps in the process, starting with the crucial task of enabling permissions, followed by the installation and configuration of WSL.
The guide then proceeds to explain how to set up the SSH service within the WSL environment, an integral part of the process. Alongside this, it also provides detailed instructions on how to modify the inbound rules of the Windows firewall to facilitate the process, ensuring that there are no connectivity issues that could potentially hinder the debugging process.
The document further emphasizes on the importance of checking the connection between the Windows and WSL environments, providing instructions on how to ensure that the connection is optimal and ready for remote debugging.
It also offers an in-depth guide on how to configure the WSL interpreter and files within the PyCharm environment. This is essential for ensuring that the debugging process is set up correctly and that the program can be run effectively within the WSL terminal.
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Design & Performance Analysis of DG-MOSFET for Reduction of Short Channel Effect over Bulk MOSFET at 20nm
1. Ankita Wagadre Int. Journal of Engineering Research and Applications www.ijera.com
ISSN : 2248-9622, Vol. 4, Issue 7( Version 1), July 2014, pp.30-34
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Design & Performance Analysis of DG-MOSFET for Reduction of Short Channel Effect over Bulk MOSFET at 20nm Ankita Wagadre*, Shashank Mane** *(Research scholar, Department of Electronics & Communication, SBITM, Betul-460001) ** (Assistant Professor, Department of Electronics & Communication, SBITM, Betul-460001) ABSTRACT An aggressive scaling of conventional MOSFETs channel length reduces below 100nm and gate oxide thickness below 3nm to improved performance and packaging density. Due to this scaling short channel effect (SCEs) like threshold voltage, Subthreshold slope, ON current and OFF current plays a major role in determining the performance of scaled devices. The double gate (DG) MOSFETS are electro-statically superior to a single gate (SG) MOSFET and allows for additional gate length scaling. Simulation work on both devices has been carried out and presented in paper. The comparative study had been carried out for threshold voltage (VT), Subthreshold slope (Sub VT), ION and IOFF Current. It is observed that DG MOSFET provide good control on leakage current over conventional Bulk (Single Gate) MOSFET. The VT (Threshold Voltage) is 2.7 times greater than & ION of DG MOSFET is 2.2 times smaller than the conventional Bulk (Single Gate) MOSFET.
Keywords - DG MOSFET (Double Gate Metal oxide Field Effect Transistor), Short Channel Effect (SCE), Bulk (Single Gate) MOSFET.
I. INTRODUCTION
The downscaling of metal-oxide-semiconductor field-effect transistor, MOSFET has been popular for decades ago to get the well circuit performance and to suit Moore‟s law as well as the direction shown by International Technology Roadmap for Semiconductor, ITRS 2012. From last 4 decade, semiconductor device technology has changed with an amazing speed [1]. There is an exponential growth in integrated circuit performance, the scaling of MOSFET dimensions and its structure has been the primary driver. From the vantage point of today, in the 45 nm process era, we look 5 years into the future and find that the double-gate MOSFET (DG- MOSFET) is widely expected to take over for the long-lasting industrial favorite, than the single-gate MOSFET [2]. As scaling is expected to reach the 14 nm era in a few years, the DGMOSFET becomes necessary in terms of its superior properties in this scaling region [3].Current CMOS technology, conventional MOSFET will be difficult to scale further, even if we use high-k gate dielectrics, metal electrodes, strained silicon and other new materials being considered. Multi Gate Field Effect Transistor (MUGFET) is thought to be the leading new transistor technology which will take over as the leading workhorse in digital electronics. International Technology Roadmap for Semiconductor, devices with gate lengths down to 10 nm can be expected in 2019 [3&6].In fact, over the past 3 decades the number of transistors per chip has been doubled every 2–3 years once a new technology node is introduced. For example 45 nm technology node will
have double MOSFETs in a microprocessor than a 65 nm technology node [4]. As MOSFET geometries shrink, the voltage that can be applied to the gate must be reduced to maintain reliability. To reduce the power, the threshold voltage of the MOSFET has to be reduced, but As threshold voltage is decreased, the transistor cannot be switched from complete turn-off to complete turn-on with the limited voltage swing available. Hence sub threshold leakage current is major issue of modern high-performance VLSI chips [5]. A. Double Gate MOSFET Single gate device at nanoscale is suffering from short channel effect that can be overcome by various multi gate structures like Double Gate, trigate & Gate All Around structure. The double gate (DG) MOSFETs are electro-statically superior to a single gate (SG) MOSFET and allows for additional gate length scaling [1]. The DG MOSFETs are the devices, which are having two gates on either side of the channel. One in upper side, known as top gate and another one is in the lower side of the channel, known as bottom gate. It gives better control of the channel by the gate electrodes [8]. This ensures that no part of the channel is far away from a gate electrode. The Double- Gate MOSFET (DGMOSFET) structure minimizes short-channel effects that allows more aggressive device downscaling of device up to 10 nm gate length [2]. There are two structures for modeling gate structure i.e Planar& Non-planar [6].
RESEARCH ARTICLE OPEN ACCESS
2. Ankita Wagadre Int. Journal of Engineering Research and Applications www.ijera.com
ISSN : 2248-9622, Vol. 4, Issue 7( Version 1), July 2014, pp.30-34
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Fig. 1. Schematics of a DG MOSFET with a
planar structure
The Advantages of using planar structure is
better uniformity of Silicon channel thickness & can
use existing fabrication processes. Disadvantages are
fabrication of back gate and gate dielectric
underneath the Silicon channel is difficult &
accessing bottom gate for device wiring is not easy
(may impact device density).Structure shown in fig.1.
Fig. 2. Schematics of a DG MOSFET with a non-planar
structure.
The advantage of using non- planar structure
(Shown in fig. 2) is the easier formation and access of
both gates (wraparound gate) & increases device
density. Disadvantage are channel thickness defined
by lithography (poorer uniformity) front and back
gates cannot be independently biased& from
conventional fabrication processes [6].
As planar structure is easy to design, the DG
planar structure is used for design & stimulation. The
voltage applied on the gate terminals controls the
electric field and determining the current flowing
through the channel. Fig. 3 shows that there are two
mode of operation (a) to switch both gates
simultaneously (b) to switch only one and apply a
bias to the second gate (this is called (“ground plane”
(GP) or “back-gate” (BG)) [5].
(a) (b)
Fig. 3. General Operation of DG MOSFET
structure
II. DESIGN OF DOUBLE GATE MOSFET
(DG-MOSFET)
For designing the proposed device and its
simulation, ATLAS device simulator tool of Silvaco
TCAD is used.
A. Device Design
The proposed device is Double Gate MOSFET
with gate length Lg of 20nm, gate oxide thickness of
1nm, metal gate with work function explicitly set to
4.17 eV, heavily n-doped (ND=1e+21 CM-3) source
and drain region, Si is the channel material with
channel doped (ND=1.5e+19 CM-3) and SiO2 is the
gate dielectric as per the ITRS 2012 road map. Fig.4
& Fig. 5 shows the designed DG-MOSFET in
Silvaco TCAD tool.
Fig. 4. Schematic structure of DG MOSFET with
gate length of 20nm
Fig. 5. Two Dimensional Device Structure of DG
MOSFET
B. Device Simulation
The modeled device is simulated to obtain the
output (IDS versus VGS curve) and (IDS versus VDS
curve) for DG MOSFET. Furthermore, some
parameters are extracted such as VT, Sub-threshold,
ON current and OFF Current.
IDS- VGS characteristics
The Two models as Shockley-Read-Hall (SRH)
model and Lombardi model (CVT) are recommended
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ISSN : 2248-9622, Vol. 4, Issue 7( Version 1), July 2014, pp.30-34
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for physical models for MOS type FETs. For
mathematical simulation calculation model, the
program select model NEWTON and GUMMEL
with maximum trap 4. To generate IDS versus VGS
characteristics curve, it is done by obtaining solutions
at each step bias points first and then solving over the
swept bias variable at each stepped point. VDS value
are obtained with VGS = 1.0 V. The outputs from
these solutions are saved in .log file (solution file).
For each drain bias, .log file is loaded and ramped
the gate voltage is performed. The drain voltage
(VDD) is set to 0.1 V while gate voltage (VGS) is
ramped from0 V to 1.0 V by a voltage step of 0.1V.
Finally, one IDS- VGS curves are overlaid using Tony
Plot as shown in fig. 6. DG MOSFET. VDD= 0.1 V
was chosen to see the current at conduction
(inversion layer exists), but at low electric field.
Fig. 6. Transfer characteristics for DG MOSFET
with L = 20 nm for VDD =0.1 V, tox= 1 nm
IDS- VDS characteristics
Fig. 7. IDS versus VDS of DG MOSFET parameter
for VGS=0V, VGS=0.5V & VGS=1.0V
IDS versus VDS curves is shown in fig. 7. For DG
MOSFET, gate voltage (VGS) is set 0V, 0.5V & 1.0
V while drain voltage (VDS) is ramped from 0 V to
1.0 V by a voltage step of 0.1 V.
Sub threshold voltage, IOFF & ION Current.
It is important to extract is to determine the
threshold voltage, VT the value of gate voltage when
transistor start „ON‟ and to investigate the ratio of on-off
current, ION/IOFF. VT is extracted when IDS is
minimum value where the Dirac point as inversion
point from hole conductance change to electron
conductance. It is also can determine when
transconductance, gm (VGS) is equal to zero. Thus,
VT is extracted when VDD equal to 0.1V while gate
voltage is ramped from 0 V to 1.0 V by a voltage step
of 0.1 V.
Transistor off-state current, IOFF is the drain
current when the gate-to-source voltage is zero
(VGS=0V). There are many factor can influent IOFF
such as VT, channel physical dimensions, channel /
surface doping profiles, drain / source junction depth,
gate oxide thickness and VDD. The other current that
flows between source and drain when transistor is in
the on-state, is called ION which defined as maximum
value of IDS. Since the current is related to VT, thus
this study also implements the formula to find the
exact value for ION, VGS-VT = 1V as in conventional
MOSFET. Thus here takes value of ION at bias
VDD=0.1 V and VGS equal to 1.0V (maximum range).
VT is 0.107 V for VDD = 0.1 V
IOFF is 0.198 nA for VDD = 0.1 V
ION is 602 μA for VDD = 0.1 V for DG MOSFET.
III. DESIGN OF SINGLE GATE MOSFET (SG
MOSFET)
For designing the proposed device and its
simulation, ATLAS device simulator tool of Silvaco
TCAD is used.
A. Device Design
The proposed device is Single Gate MOSFET
with gate length Lg of 20nm, gate oxide thickness of
1nm, metal gate with work function explicitly set to
4.17 eV, heavily n-doped (ND=1e+20 CM-3) source
and drain region, Si is the channel material with
channel doped (ND=2.5e+19 CM-3) and SiO2 is the
gate dielectric as per the ITRS 2012 road map. Fig. 8
& Fig. 9 shows the designed SG-MOSFET in Silvaco
TCAD tool.
Fig.8 . Schematic structure of SG MOSFET with
gate length of 20nm
4. Ankita Wagadre Int. Journal of Engineering Research and Applications www.ijera.com
ISSN : 2248-9622, Vol. 4, Issue 7( Version 1), July 2014, pp.30-34
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Fig. 9. Two Dimensional Device Structure of SG MOSFET B. Device Simulation The modeled device is simulated to obtain the output (IDS versus VGS curve) and (IDS versus VDS curve) for SG MOSFET. Furthermore, some parameters are extracted such as VT, Sub-threshold, ON current and OFF Current. IDS- VGS characteristics The Two models as Shockley-Read-Hall (SRH) model and Lombardi model (CVT) are recommended for physical models for MOS type FETs. For mathematical simulation calculation model, the program select model NEWTON and GUMMEL with maximum trap 4. To generate IDS versus VGS characteristics curve, it is done by obtaining solutions at each step bias points first and then solving over the swept bias variable at each stepped point. VDS value are obtained with VGS = 1.0 V. The outputs from these solutions are saved in .log file (solution file). For each drain bias, .log file is loaded and ramped the gate voltage is performed. The drain voltage (VDD) is set to 0.1 V while gate voltage (VGS) is ramped from0 V to 1.0 V by a voltage step of 0.1V. Finally, one IDS- VGS curves are overlaid using Tony Plot as shown in fig. 10. SG MOSFET. VDD= 0.1 V was chosen to see the current at conduction (inversion layer exists), but at low electric field. Fig. 10. Transfer characteristics for SG MOSFET with L = 20 nm for VDD =0.1 V, tox= 1 nm
IDS- VDS characteristics Fig.11. IDS versus VDS of SG MOSFET parameter for VGS=0V, VGS=0.5V & VGS=1.0V IDS versus VDS curves is shown in fig. 11. For SG MOSFET, gate voltage (VGS) is set 0V, 0.5V & 1.0 V while drain voltage (VDS) is ramped from 0 V to 1.0 V by a voltage step of 0.1 V. Sub threshold voltage, IOFF & ION Current. It is important to extract is to determine the threshold voltage, VT the value of gate voltage when transistor start „ON‟ and to investigate the ratio of on- off current, ION/IOFF. VT is extracted when IDS is minimum value where the Dirac point as inversion point from hole conductance change to electron conductance. It is also can determine when transconductance, gm (VGS) is equal to zero. Thus, VT is extracted when VDD equal to 0.1V while gate voltage is ramped from 0 V to 1.0 V by a voltage step of 0.1 V. Transistor off-state current, IOFF is the drain current when the gate-to-source voltage is zero (VGS=0V). There are many factor can influent IOFF such as VT, channel physical dimensions, channel / surface doping profiles, drain / source junction depth, gate oxide thickness and VDD. The other current that flows between source and drain when transistor is in the on-state, is called ION which defined as maximum value of IDS. Since the current is related to VT, thus this study also implements the formula to find the exact value for ION.. Thus here takes value of ION at bias VDD=0.1 V and VGS equal to 1.0V (maximum range). VT is 0.289 V for VDD = 0.1 V IOFF is 0.198 nA for VDD = 0.1 V ION is 270 μA for VDD = 0.1 V for SG MOSFET.
IV. RESULT
Both structure of SG MOSFET and DG MOSFET has designed in silvaco TCAD tool at 20 nm and results has presented. The comparative results are shown in table 1 for VT, Sub Vt slope, IOFF & ION for VDD=0.1 V. From table it is clear that DG
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MOSFET is having good control over current as ION is increased from 270 μA to 602 μA. This will leads to reduction in leakage power in the device & hence to the whole circuit. The VT (Threshold Voltage) is 2.7 times greater than & ION of DG MOSFET 2.2 times smaller than the conventional Bulk (Single Gate) MOSFET.
TABLE I. EXTRACTED DATA OF DG MOSFET & DG CNFET WITH LG=20NM
For VDS = 0.1 V
VT (V)
Sub Vt Slope (mv/dec)
IOFF (nA)
ION (μA)
SG MOSFET
0.289 V
65.5
0.198
270
DG MOSFET
0.107 V
64
158
602
V. CONCLUSION
Short channel effect can be reduced by multigate MOSFETs. Two FET structures have been designed using Silvaco TCAD tool at 20nm technology & comparing the results of Single gate MOSFET & Double Gate MOSFET. Improvement in the device reliability with better reduction of Short Channel Effects has been observed through the simulation results by proper tuning of the channel thickness to ensure the volume inversion. Several structures have been proposed: planar & Non planar. DG MOSFET with planar structure is so far the most promising. Experimental results has presented, the new structure DG MOSFET possesses excellent sub threshold and output characteristics without short-channel effects, demonstrating the shortest gate length. Results shows that leakage current in SG MOSFET is much smaller as compared to that of DG MOSFET, whereas the ON current in DG MOSFET is much larger as compared to that of SG MOSFET. The VT (Threshold Voltage) is 2.7 times greater than & ION of DG MOSFET 2.2 times smaller than the conventional Bulk (Single Gate) MOSFET.
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