A bipolar transistor is a semiconductor device that can act as a variable resistor. It is made up of three layers that form two P-N junctions: an emitter, base, and collector. In the common emitter configuration, a positive input signal at the base increases the base-emitter voltage, increasing the emitter, base, and collector currents, which decreases the collector voltage and increases the output voltage 180 degrees out of phase with the input. A negative input signal decreases the currents and reverses the voltages at the output. The transistor provides voltage and current gain in amplifier and switching applications.
The study of the basics of electronics can be studied through the link http://bit.ly/2PPv0mv
The transistor is a semiconductor device with three connections, capable of amplification in addition to rectification
Bipolar Junction Transistor (BJT) DC and AC AnalysisJess Rangcasajo
BJT AC and DC Analysis
This slide condenses the two ways analysis of BJT (AC and DC).
At the end of the slide, it has review question answer with answer key as providing.
The study of the basics of electronics can be studied through the link http://bit.ly/2PPv0mv
The transistor is a semiconductor device with three connections, capable of amplification in addition to rectification
Bipolar Junction Transistor (BJT) DC and AC AnalysisJess Rangcasajo
BJT AC and DC Analysis
This slide condenses the two ways analysis of BJT (AC and DC).
At the end of the slide, it has review question answer with answer key as providing.
The presentation covers Bipolar Junction Transistor: Construction, Operation, Transistor configurations and input / output characteristics; Common Base, Common Emitter, and Common Collector
I presented this slid in my last presentation about bipolar junction transistor configuration.Now I'm sharing this with all of you guys it can be helpful for you.
Look at the beautiful view of forgiveness of mistakes.
Thank you
The presentation covers Bipolar Junction Transistor: Construction, Operation, Transistor configurations and input / output characteristics; Common Base, Common Emitter, and Common Collector
I presented this slid in my last presentation about bipolar junction transistor configuration.Now I'm sharing this with all of you guys it can be helpful for you.
Look at the beautiful view of forgiveness of mistakes.
Thank you
discussing differences faithful and un- faithful amplification
discussing stabilition in transistors
and how temperature affect collector current
discussing various methods of transistor biasing like
Base resister method ,Emitter Base method , Biasing with collector feedback method , Voltage divider bias
4. Base: Thin and lightly doped region that controls current flow through the transistor.
5.
6. Biasing Requirements Base to Emitter Junction (VBE) Forward biased for majority current carriers to flow from emitter to base, where they become minority carriers Base to Collector Junction (VBC) Reverse biased to allow minority current carriers from the emitter flow from base to collector Collector VBC Q1 Base VBE Emitter
7. Steady-State Operation P N N With the Base to Emitter Junction forward biased, majority current carriers flow from emitter to base, where they become minority carriers This is emitter current (IE) Since the base is thin and lightly doped, very few current carriers recombine in the base This is base current (IB) The rest of the current carriers are swept across the base to collector junction This is collector current (IC) E C B IE IC IB Electron Current Flow Conventional Current Flow
8. Transient Operation (VBE) P N N Base to emitter junction is forward biased Low resistance, so small in VBE causes a large in IE The base is thin and lightly doped Few current carriers recombine to form more base current IB only slightly The rest of the current carriers are swept across the base to collector junction IC greatly E C B
9. Bipolar Transistor Characteristics Current Relationships Emitter current equals base current plus collector current Alpha (α): Ratio of Collector Current to Emitter Current Typically 0.95 – 0.98 Beta (β): Ratio of Collector Current to Base Current Ranges from 40 to >100 depending on application Gamma (γ): Ratio of Emitter Current to Base Current Slightly greater than β
10. Bipolar Transistor Characteristics Typical Characteristic Curve Shows relationship between IB, IC and VCE IC relatively constant for a given VCE IC dependant on IB Saturation IC no longer increases for an increase in IB IC is maximum VCE is minimum (VCE ≈ 0.2VDC) “ON” state when used as a switch Cutoff Transistor not biased to conduct IB, IC, IE = 0A VCE is maximum for circuit “OFF” state when used as a switch Saturation Cutoff
11. Bipolar Transistor Characteristics Load Line Straight line drawn between saturation and cutoff, representing range of operating points Quiescent Point (Q-Point) The steady-state values of IB, IC, and VCE with no AC input applied Determined by circuit design Saturation Q-Point Cutoff Load Line
12. Common Emitter Configuration +VCC Emitter is “common” to both input and output Input applied to base to change VBE Output taken from collector Gain Medium voltage gain and current gain High power gain Impedance Medium input and output impedance RC IB IC RB Vout C1 Vin Q1 IE
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