This paper presents a spin-transfer torque- magnetic
tunnel junction (STT-MTJ) based non-volatile 9-transistor
(9T) SRAM cell. The cell achieves low power dissipation due
to its series connected MTJ elements and read buffer which
offer stacking effect. The paper studies the impact of PVT
(process, voltage, and temperature) variations on the design
metric of the SRAM cell such as write delay and compares the
results with non-volatile 8T SRAM cell (NV8T). The proposed
design consumes lower leakage power and exhibits narrower
spread in write delay compared with NV8T.
Design of STT-RAM cell in 45nm hybrid CMOS/MTJ processEditor IJCATR
This paper evaluates the performance of Spin-Torque Transfer Random Access Memory (STT-RAM) basic memory cell
configurations in 45nm hybrid CMOS/MTJ process. Switching speed and current drawn by the cells have been calculated and
compared. Cell design has been done using cadence tools. The results obtained show good agreement with theoretical results.
The processor caches, main memory and storage system is an integral part of any computer system. As information begins to accumulate, higher density and long term storage solutions are necessary. Due to this, computer architects face some level of challenges in developing reliable, energy-efficient and high performance memories. Also, existing storage devises are degrading in performance, cost, and sizes. Power consumption from the factory has increased, as newer codes are written, and server hardware capabilities are not adequate to handle big data of the future. New emerging memories (NEMs) are presently with its properties likely to open doors to innovative memory designs to solve the problems. This paper looks at the features of the emerging memory technologies, and compares incumbent memories types with the expected future memories.
Process Variation and Radiation-Immune Single Ended 6T SRAM CellIDES Editor
The leakage power can dominate the system power
dissipation and determine the battery life in battery-operated
applications with low duty cycles, such as the wireless sensors,
cellular phones, PDAs or pacemakers. Driven by the need of
ultra-low power applications, this paper presents single ended
6T SRAM (static random access memory) cell which is also
radiation hardened due to maximum use of PMOS
transistors. Due to process imperfection, starting from the 65
nm technology node, device scaling no longer delivers the
power gains. Since then the supply voltage has remained
almost constant and improvement in dynamic power has
stagnated, while the leakage currents have continued to
increase. Therefore, power reduction is the major area of
concern in today’s circuit with minimum-geometry devices
such as nanoscale memories. The proposed design in this
paper saves dynamic write power more than 50%. It also
offers 29.7% improvement in TWA (write access time), 38.5%
improvement in WPWR (write power), 69.6% improvement in
WEDP (write energy delay product), 26.3% improvement in
WEDP variability, 5.6% improvement in RPWR (read power) at
the cost of 22.5% penalty in SNM (static noise margin) at
nominal voltage of VDD = 1 V. The tighter spread in write EDP
implies its robustness against process and temperature
variations. Monte Carlo simulation measurements validate
the design at 32 nm technology node.
Design of STT-RAM cell in 45nm hybrid CMOS/MTJ processEditor IJCATR
This paper evaluates the performance of Spin-Torque Transfer Random Access Memory (STT-RAM) basic memory cell
configurations in 45nm hybrid CMOS/MTJ process. Switching speed and current drawn by the cells have been calculated and
compared. Cell design has been done using cadence tools. The results obtained show good agreement with theoretical results.
The processor caches, main memory and storage system is an integral part of any computer system. As information begins to accumulate, higher density and long term storage solutions are necessary. Due to this, computer architects face some level of challenges in developing reliable, energy-efficient and high performance memories. Also, existing storage devises are degrading in performance, cost, and sizes. Power consumption from the factory has increased, as newer codes are written, and server hardware capabilities are not adequate to handle big data of the future. New emerging memories (NEMs) are presently with its properties likely to open doors to innovative memory designs to solve the problems. This paper looks at the features of the emerging memory technologies, and compares incumbent memories types with the expected future memories.
Process Variation and Radiation-Immune Single Ended 6T SRAM CellIDES Editor
The leakage power can dominate the system power
dissipation and determine the battery life in battery-operated
applications with low duty cycles, such as the wireless sensors,
cellular phones, PDAs or pacemakers. Driven by the need of
ultra-low power applications, this paper presents single ended
6T SRAM (static random access memory) cell which is also
radiation hardened due to maximum use of PMOS
transistors. Due to process imperfection, starting from the 65
nm technology node, device scaling no longer delivers the
power gains. Since then the supply voltage has remained
almost constant and improvement in dynamic power has
stagnated, while the leakage currents have continued to
increase. Therefore, power reduction is the major area of
concern in today’s circuit with minimum-geometry devices
such as nanoscale memories. The proposed design in this
paper saves dynamic write power more than 50%. It also
offers 29.7% improvement in TWA (write access time), 38.5%
improvement in WPWR (write power), 69.6% improvement in
WEDP (write energy delay product), 26.3% improvement in
WEDP variability, 5.6% improvement in RPWR (read power) at
the cost of 22.5% penalty in SNM (static noise margin) at
nominal voltage of VDD = 1 V. The tighter spread in write EDP
implies its robustness against process and temperature
variations. Monte Carlo simulation measurements validate
the design at 32 nm technology node.
Using CMOS Sub-Micron Technology VLSI Implementation of Low Power, High Speed...VLSICS Design
Abstract This paper deals with the design and analysis of high speed Static Random Access Memory (SRAM) cell and Dynamic Random Access Memory (DRAM) cell to develop low power consumption. SRAM and DRAM cells have been the predominant technologies used to implement memory cells in computer systems, each one having its advantages and shortcomings. SRAM cells are faster and require no refresh since reads are not destructive. In contrast, DRAM cells provide higher density and minimal leakage energy. Here we use 12-transistor SRAM cell built from a simple static latch and tri state inverter. The reading action itself refreshes the content of memory. The SRAM access path is split into two portions: from address input to word line rise (the row decoder) and from word line rise to data output (the read data path). The decoder which constitutes the path from address input to the word line rise is implemented as a binary structure by implementing a multi-stage path. The key to low power operation in the SRAM data path is to reduce the signal swings on the high capacitance nodes like the bit lines and the data lines.
FPGA IMPLEMENTATION OF RECOVERY BOOSTING TECHNIQUE TO ENHANCE NBTI RECOVERY I...Editor IJMTER
Negative Bias Temperature Instability is an important lifetime reliability problem in
microprocessors. SRAM-based structures within the processor are especially susceptible to NBTI
since one of the PMOS devices in the memory cell always has an input of ‘0’. Previously proposed
recovery techniques for SRAM cells aim to balance the degradation of the two PMOS devices by
attempting to keep their inputs at a logic ‘0’ exactly 50% of the time. However, one of the devices is
always in the negative bias condition at any given time. In this paper, we propose a technique called
Recovery Boosting that allows both PMOS devices in the memory cell to be put into the recovery
mode by slightly modifying the design of conventional SRAM cells to verify its functionality and
quantity area and power consumption.
Average and Static Power Analysis of a 6T and 7T SRAM Bit-Cell at 180nm, 90nm...idescitation
A lot of consideration has been given to problems arising due to power dissipation.
Different ideas have been proposed by many researchers from the device level to the
architectural level and above. However, there is no universal way to avoid tradeoffs between
the power, delay and area. This is why; the designers are required to choose appropriate
techniques that satisfy application and product needs. Another important component of
power which contributes to power dissipation is Dynamic Power. This power is increasing
due to prolonged use of the electronic equipments. This is due to the fact that now-a-days
people are working on electronic systems from morning till night; it may be a mobile phone
or a laptop or any other equipment. This paper deals with the estimation of two components
of power i.e. static power (when device is in the standby mode) and the average power
(average amount of energy consumed with respect to time) of a 6T and 7T SRAM (Static
Random Access Memory) bit-cell at 180nm, 90nm, and 45nm CMOS Technology. This is
done in order to estimate the power required for a high speed operation of 6T and 7T
SRAM bit-cell.
This paper investigates the leakage current, static noise margin (SNM), delay and energy consumption of a 6 transistor FinFET based static random-access memory (SRAM) cell due to the variation in design and operating parameters of the SRAM cell. The SRAM design and operating parameters considered in this
investigation are transistor sizing, supply voltage, word-line voltage, temperature and PFET and NFET back gate biasing. This investigation is performed using a 11nm FinFET shorted gate and low power technology models. Based on the investigation results, we propose a robust 6 transistor SRAM cells with optimized performance using shorted gate and independent gate low power FinFET models. By optimizing
the design parameters of the cell, the shorted-gate design shows an improvement of read SNM of 261.56mV
and an improvement of hold SNM of 87.68mV when compared to a shorted-gate cell with standard design parameters. The low-power design shows an improvement of read SNM of 146.18mV and a marginal decrease in hold SNM of 22.84mV when compared to a low-power cell with standard design parameters. Both the cells with the new optimized design parameters are shown to improve the overall SNM of the cells
with minimal impact on the subthreshold leakage currents, performance and energy consumption.
This paper proposes a variation – tolerant dual-diameter CNFET-based 7T (seven transistor) SRAM (static random access memory) cell. The use of appropriate DCNT (diameter of CNFET) and hence Vt of CNFETs is a critical piece of our design strategy. In this work, dual-Vt and dual-diameter CNFETs have been used using suitable chiral vectors for appropriate transistors. It also investigates the impact of process, voltage and temperature variations on its design metrics and compares the results with its counterpart − CMOS-based 7T SRAM cell and standard 6T SRAM cell (only few parameters). The proposed SRAM cell offers 1.35× and 1.25× improvement in standby power on an average @ VDD = 1 V and 0.9 V respectively, 30% improvement in SNM (Static Noise Margin) over CMOS-based 7T cell. Proposed design outperforms 6T in terms of 71.4% improvement in RSNM and shows same read stability as its CMOS counterpart, It shows its robustness by offering 1.4× less spread in TRA (read access time) at 1 V and 1.2× less spread in TRA at 0.9 V than that of its CMOS counterpart at the expense of 1.6× read delay. The proposed bitcell also exhibits higher performance while writing (takes 1.3× and 1.2× less TWA (write access time) @ VDD = 1 V and VDD= 0.9 V respectively). It also proves its robustness against process variations by featuring tighter spread in TWA variability (1.4× and 1.2× @ VDD= 1 V and 0.9 V respectively).
Design and implementation of 4 t, 3t and 3t1d dram cell design on 32 nm techn...VLSICS Design
In this paper average power consumption, write access time, read access time and retention time of dram
cell designs have been analyzed for the nano-meter scale memories. Many modern day processors use
dram cell for on chip data and program memory storage. The major power in dram is the off state leakage
current. Improving on the power efficiency of a dram cell is critical for the improvement in average power
consumption of the overall system. 3T dram cell, 4T dram and 3T1D DRAM cells are designed with the
schematic design technique and their average power consumption are compared using TANNER EDA tool
.average power consumption, write access time, read access time and retention time of 4T, 3T dram and
3T1D DRAM cell are simulated and compared on 32 nm technology
IJRET : International Journal of Research in Engineering and Technology is an international peer reviewed, online journal published by eSAT Publishing House for the enhancement of research in various disciplines of Engineering and Technology. The aim and scope of the journal is to provide an academic medium and an important reference for the advancement and dissemination of research results that support high-level learning, teaching and research in the fields of Engineering and Technology. We bring together Scientists, Academician, Field Engineers, Scholars and Students of related fields of Engineering and Technology.
Large number of interconnection
requirement has become a major limitation to the designs
using binary logic. One of the solutions for this is MultipleValued
Logic (MVL). MVL proves to be advantageous as it
reduces dynamic power dissipation, increases computational
ability, data density and requires less number of
interconnects. In this paper, the implementation of a Static
Random Access Memory (SRAM) cell using a quaternary D
Latch is proposed. The D Latch is built using NMAX, NMIN
and quaternary inverter circuit. Using this SRAM cell a 4X4
SRAM array is constructed and is compared with 4X4 array
of Quaternary Static CMOS memory cell. The spice coding
is done using 0.18μm CMOS technology and verification of
the design is done through HSPICE and COSMOSSCOPE
Synopsis Tools. Power and delay of the circuit is analyzed.
Built-in Self Repair for SRAM Array using RedundancyIDES Editor
In this paper, a built-in self repair technique for
word-oriented two-port SRAM memories is presented. The
technique is implemented by additional hardware design
instead of traditional software diagnostic procedures and the
computation time is minimized. A built-in self-test (BIST) is
used to detect the faulty locations which are isolated
immediately after detection. Therefore, the redirection process
can be executed as soon as possible. Spare rows are used to
replace the faulty rows. The hardware overhead of the
automatic fault isolation design depends on size of memory
system. All the repairs using BISR circuit are done at power
on.
Designed a fully customized 128x10b SRAM by constructing schematic & virtuoso layout of memory cell array (6T cell), row & column decoder, pre-charge circuit, write circuit and sense amplifier using Cadence. Manually placed and routed all components, performed DRC & LVS debugging of constructed schematic and layout and ran PEX to generate the final Netlist, Hspice Spectre simulation of final design for verification of the correct functionality and analysis of best read, best write cycles & the worst case timing for read and write. Timing and power consumed is analyzed through STA-Primetime (Static timing Analysis)
A Novel Low Power Energy Efficient SRAM Cell With Reduced Power Consumption u...iosrjce
In modern high performance integrated circuits, maximum of the total active mode energy is
consumed due to leakage current. SRAM cell array is main source of leakage current since majority of
transistor are utilized for on-chip memory in today high performance microprocessor and system on chip
designs. Therefore the design of low leakage SRAM is required. Reducing power dissipation, supply voltage,
leakage currents, area of chip are the most important parameters in today`s VLSI designs. But scaling of these
parameters will lead to drastic increase in sub threshold leakage currents and power dissipation because of that
performance of the design is degraded. So to overcome these issues it is better to concentrate on reduction of
active leakage currents and dynamic power dissipation by using power reduction techniques. In this paper 9T
SRAM (data retention p-gated) cell for low voltage and energy constrain application is analyzed with respect to
power dissipation, area and delay. The analyzed design of 9T SRAM cell with MTCMOS technique has been
proposed. Designed circuits are simulated in Microwind 3.1 VLSI CAD Tool in 90 and 65nm CMOS technology.
International Journal of Engineering Research and Development (IJERD)IJERD Editor
journal publishing, how to publish research paper, Call For research paper, international journal, publishing a paper, IJERD, journal of science and technology, how to get a research paper published, publishing a paper, publishing of journal, publishing of research paper, reserach and review articles, IJERD Journal, How to publish your research paper, publish research paper, open access engineering journal, Engineering journal, Mathemetics journal, Physics journal, Chemistry journal, Computer Engineering, Computer Science journal, how to submit your paper, peer reviw journal, indexed journal, reserach and review articles, engineering journal, www.ijerd.com, research journals,
yahoo journals, bing journals, International Journal of Engineering Research and Development, google journals, hard copy of journal
A Single-Ended With Dynamic Feedback Control 8T Subthreshold SRAM Cell Ieee Xpert
A Single-Ended With Dynamic Feedback Control
8T Subthreshold SRAM Cell
A Single-Ended With Dynamic Feedback Control
8T Subthreshold SRAM Cell
A Single-Ended With Dynamic Feedback Control
8T Subthreshold SRAM Cell
A Single-Ended With Dynamic Feedback Control
8T Subthreshold SRAM Cell
A Single-Ended With Dynamic Feedback Control
8T Subthreshold SRAM Cell
FPGA IMPLEMENTATION OF LOW POWER SRAM BASED PROCESSOR IN 8T USING HETTSEditor IJMTER
In MOSFETs lower limit sub threshold swing (60mv/decade) restricts the low power
operation. Low voltage operation is enabled by low Vth while maintaining performance. Hence steep
sub threshold slopes provide power-efficient operation without any loss of performance. To obtain
sub threshold swings of less than 30mV/decade with large ON current, Si/SiGe heterojunction
tunneling transistor uses gate controlled modulation. To overcome the impact of HETT
characteristics on SRAM, seven transistors HETT based SRAM design is introduced. Compared to
CMOS this new 8T HETT SRAM achieves reduction in leakage power.
Using CMOS Sub-Micron Technology VLSI Implementation of Low Power, High Speed...VLSICS Design
Abstract This paper deals with the design and analysis of high speed Static Random Access Memory (SRAM) cell and Dynamic Random Access Memory (DRAM) cell to develop low power consumption. SRAM and DRAM cells have been the predominant technologies used to implement memory cells in computer systems, each one having its advantages and shortcomings. SRAM cells are faster and require no refresh since reads are not destructive. In contrast, DRAM cells provide higher density and minimal leakage energy. Here we use 12-transistor SRAM cell built from a simple static latch and tri state inverter. The reading action itself refreshes the content of memory. The SRAM access path is split into two portions: from address input to word line rise (the row decoder) and from word line rise to data output (the read data path). The decoder which constitutes the path from address input to the word line rise is implemented as a binary structure by implementing a multi-stage path. The key to low power operation in the SRAM data path is to reduce the signal swings on the high capacitance nodes like the bit lines and the data lines.
FPGA IMPLEMENTATION OF RECOVERY BOOSTING TECHNIQUE TO ENHANCE NBTI RECOVERY I...Editor IJMTER
Negative Bias Temperature Instability is an important lifetime reliability problem in
microprocessors. SRAM-based structures within the processor are especially susceptible to NBTI
since one of the PMOS devices in the memory cell always has an input of ‘0’. Previously proposed
recovery techniques for SRAM cells aim to balance the degradation of the two PMOS devices by
attempting to keep their inputs at a logic ‘0’ exactly 50% of the time. However, one of the devices is
always in the negative bias condition at any given time. In this paper, we propose a technique called
Recovery Boosting that allows both PMOS devices in the memory cell to be put into the recovery
mode by slightly modifying the design of conventional SRAM cells to verify its functionality and
quantity area and power consumption.
Average and Static Power Analysis of a 6T and 7T SRAM Bit-Cell at 180nm, 90nm...idescitation
A lot of consideration has been given to problems arising due to power dissipation.
Different ideas have been proposed by many researchers from the device level to the
architectural level and above. However, there is no universal way to avoid tradeoffs between
the power, delay and area. This is why; the designers are required to choose appropriate
techniques that satisfy application and product needs. Another important component of
power which contributes to power dissipation is Dynamic Power. This power is increasing
due to prolonged use of the electronic equipments. This is due to the fact that now-a-days
people are working on electronic systems from morning till night; it may be a mobile phone
or a laptop or any other equipment. This paper deals with the estimation of two components
of power i.e. static power (when device is in the standby mode) and the average power
(average amount of energy consumed with respect to time) of a 6T and 7T SRAM (Static
Random Access Memory) bit-cell at 180nm, 90nm, and 45nm CMOS Technology. This is
done in order to estimate the power required for a high speed operation of 6T and 7T
SRAM bit-cell.
This paper investigates the leakage current, static noise margin (SNM), delay and energy consumption of a 6 transistor FinFET based static random-access memory (SRAM) cell due to the variation in design and operating parameters of the SRAM cell. The SRAM design and operating parameters considered in this
investigation are transistor sizing, supply voltage, word-line voltage, temperature and PFET and NFET back gate biasing. This investigation is performed using a 11nm FinFET shorted gate and low power technology models. Based on the investigation results, we propose a robust 6 transistor SRAM cells with optimized performance using shorted gate and independent gate low power FinFET models. By optimizing
the design parameters of the cell, the shorted-gate design shows an improvement of read SNM of 261.56mV
and an improvement of hold SNM of 87.68mV when compared to a shorted-gate cell with standard design parameters. The low-power design shows an improvement of read SNM of 146.18mV and a marginal decrease in hold SNM of 22.84mV when compared to a low-power cell with standard design parameters. Both the cells with the new optimized design parameters are shown to improve the overall SNM of the cells
with minimal impact on the subthreshold leakage currents, performance and energy consumption.
This paper proposes a variation – tolerant dual-diameter CNFET-based 7T (seven transistor) SRAM (static random access memory) cell. The use of appropriate DCNT (diameter of CNFET) and hence Vt of CNFETs is a critical piece of our design strategy. In this work, dual-Vt and dual-diameter CNFETs have been used using suitable chiral vectors for appropriate transistors. It also investigates the impact of process, voltage and temperature variations on its design metrics and compares the results with its counterpart − CMOS-based 7T SRAM cell and standard 6T SRAM cell (only few parameters). The proposed SRAM cell offers 1.35× and 1.25× improvement in standby power on an average @ VDD = 1 V and 0.9 V respectively, 30% improvement in SNM (Static Noise Margin) over CMOS-based 7T cell. Proposed design outperforms 6T in terms of 71.4% improvement in RSNM and shows same read stability as its CMOS counterpart, It shows its robustness by offering 1.4× less spread in TRA (read access time) at 1 V and 1.2× less spread in TRA at 0.9 V than that of its CMOS counterpart at the expense of 1.6× read delay. The proposed bitcell also exhibits higher performance while writing (takes 1.3× and 1.2× less TWA (write access time) @ VDD = 1 V and VDD= 0.9 V respectively). It also proves its robustness against process variations by featuring tighter spread in TWA variability (1.4× and 1.2× @ VDD= 1 V and 0.9 V respectively).
Design and implementation of 4 t, 3t and 3t1d dram cell design on 32 nm techn...VLSICS Design
In this paper average power consumption, write access time, read access time and retention time of dram
cell designs have been analyzed for the nano-meter scale memories. Many modern day processors use
dram cell for on chip data and program memory storage. The major power in dram is the off state leakage
current. Improving on the power efficiency of a dram cell is critical for the improvement in average power
consumption of the overall system. 3T dram cell, 4T dram and 3T1D DRAM cells are designed with the
schematic design technique and their average power consumption are compared using TANNER EDA tool
.average power consumption, write access time, read access time and retention time of 4T, 3T dram and
3T1D DRAM cell are simulated and compared on 32 nm technology
IJRET : International Journal of Research in Engineering and Technology is an international peer reviewed, online journal published by eSAT Publishing House for the enhancement of research in various disciplines of Engineering and Technology. The aim and scope of the journal is to provide an academic medium and an important reference for the advancement and dissemination of research results that support high-level learning, teaching and research in the fields of Engineering and Technology. We bring together Scientists, Academician, Field Engineers, Scholars and Students of related fields of Engineering and Technology.
Large number of interconnection
requirement has become a major limitation to the designs
using binary logic. One of the solutions for this is MultipleValued
Logic (MVL). MVL proves to be advantageous as it
reduces dynamic power dissipation, increases computational
ability, data density and requires less number of
interconnects. In this paper, the implementation of a Static
Random Access Memory (SRAM) cell using a quaternary D
Latch is proposed. The D Latch is built using NMAX, NMIN
and quaternary inverter circuit. Using this SRAM cell a 4X4
SRAM array is constructed and is compared with 4X4 array
of Quaternary Static CMOS memory cell. The spice coding
is done using 0.18μm CMOS technology and verification of
the design is done through HSPICE and COSMOSSCOPE
Synopsis Tools. Power and delay of the circuit is analyzed.
Built-in Self Repair for SRAM Array using RedundancyIDES Editor
In this paper, a built-in self repair technique for
word-oriented two-port SRAM memories is presented. The
technique is implemented by additional hardware design
instead of traditional software diagnostic procedures and the
computation time is minimized. A built-in self-test (BIST) is
used to detect the faulty locations which are isolated
immediately after detection. Therefore, the redirection process
can be executed as soon as possible. Spare rows are used to
replace the faulty rows. The hardware overhead of the
automatic fault isolation design depends on size of memory
system. All the repairs using BISR circuit are done at power
on.
Designed a fully customized 128x10b SRAM by constructing schematic & virtuoso layout of memory cell array (6T cell), row & column decoder, pre-charge circuit, write circuit and sense amplifier using Cadence. Manually placed and routed all components, performed DRC & LVS debugging of constructed schematic and layout and ran PEX to generate the final Netlist, Hspice Spectre simulation of final design for verification of the correct functionality and analysis of best read, best write cycles & the worst case timing for read and write. Timing and power consumed is analyzed through STA-Primetime (Static timing Analysis)
A Novel Low Power Energy Efficient SRAM Cell With Reduced Power Consumption u...iosrjce
In modern high performance integrated circuits, maximum of the total active mode energy is
consumed due to leakage current. SRAM cell array is main source of leakage current since majority of
transistor are utilized for on-chip memory in today high performance microprocessor and system on chip
designs. Therefore the design of low leakage SRAM is required. Reducing power dissipation, supply voltage,
leakage currents, area of chip are the most important parameters in today`s VLSI designs. But scaling of these
parameters will lead to drastic increase in sub threshold leakage currents and power dissipation because of that
performance of the design is degraded. So to overcome these issues it is better to concentrate on reduction of
active leakage currents and dynamic power dissipation by using power reduction techniques. In this paper 9T
SRAM (data retention p-gated) cell for low voltage and energy constrain application is analyzed with respect to
power dissipation, area and delay. The analyzed design of 9T SRAM cell with MTCMOS technique has been
proposed. Designed circuits are simulated in Microwind 3.1 VLSI CAD Tool in 90 and 65nm CMOS technology.
International Journal of Engineering Research and Development (IJERD)IJERD Editor
journal publishing, how to publish research paper, Call For research paper, international journal, publishing a paper, IJERD, journal of science and technology, how to get a research paper published, publishing a paper, publishing of journal, publishing of research paper, reserach and review articles, IJERD Journal, How to publish your research paper, publish research paper, open access engineering journal, Engineering journal, Mathemetics journal, Physics journal, Chemistry journal, Computer Engineering, Computer Science journal, how to submit your paper, peer reviw journal, indexed journal, reserach and review articles, engineering journal, www.ijerd.com, research journals,
yahoo journals, bing journals, International Journal of Engineering Research and Development, google journals, hard copy of journal
A Single-Ended With Dynamic Feedback Control 8T Subthreshold SRAM Cell Ieee Xpert
A Single-Ended With Dynamic Feedback Control
8T Subthreshold SRAM Cell
A Single-Ended With Dynamic Feedback Control
8T Subthreshold SRAM Cell
A Single-Ended With Dynamic Feedback Control
8T Subthreshold SRAM Cell
A Single-Ended With Dynamic Feedback Control
8T Subthreshold SRAM Cell
A Single-Ended With Dynamic Feedback Control
8T Subthreshold SRAM Cell
FPGA IMPLEMENTATION OF LOW POWER SRAM BASED PROCESSOR IN 8T USING HETTSEditor IJMTER
In MOSFETs lower limit sub threshold swing (60mv/decade) restricts the low power
operation. Low voltage operation is enabled by low Vth while maintaining performance. Hence steep
sub threshold slopes provide power-efficient operation without any loss of performance. To obtain
sub threshold swings of less than 30mV/decade with large ON current, Si/SiGe heterojunction
tunneling transistor uses gate controlled modulation. To overcome the impact of HETT
characteristics on SRAM, seven transistors HETT based SRAM design is introduced. Compared to
CMOS this new 8T HETT SRAM achieves reduction in leakage power.
VLSI stands for Very Large Scale Integration. Generally there are mainly 2 types of VLSI projects – 1. Projects in VLSI based System Design, 2. VLSI Design Projects. You might be confused to understand the difference between these 2 types of projects. Let me now explain to you.
Projects in VLSI based system design are the projects which involve the design of various types of digital systems that can be implemented on a PLD device like a FPGA or a CPLD.
Energy optimization of 6T SRAM cell using low-voltage and high-performance in...IJECEIAES
The performance of the cell deteriorates, when static random access memory (SRAM) cell is operated below 1V supply voltage with continuous scale down of the complementary metal oxide semiconductor (CMOS) technology. The conventional 6T, 8T-SRAM cells suffer writeability and read static noise margins (SNM) at low-voltages leads to degradation of cell stability. To improve the cell stability and reduce the dynamic power dissipation at low- voltages of the SRAM cell, we proposed four SRAM cells based on inverter structures with less energy consumption using voltage divider bias current sink/source inverter and NOR/NAND gate using a pseudo-nMOS inverter. The design and implementation of SRAM cell using proposed inverter structures are compared with standard 6T, 8T and ST-11T SRAM cells for different supply voltages at 22-nm CMOS technology exhibit better performance of the cell. The read/write static noise margin of the cell significantly increases due to voltage divider bias network built with larger cell-ratio during read path. The load capacitance of the cell is reduced with minimized switching transitions of the devices during high-to-low and low- to-high of the pull-up and pull-down networks from VDD to ground leads to on an average 54% of dynamic power consumption. When compared with the existing ones, the read/write power of the proposed cells is reduced to 30%. The static power gets reduced by 24% due to stacking of transistors takes place in the proposed SRAM cells as compare to existing ones. The layout of the proposed cells is drawn at a 45-nm technology, and occupies an area of 1.5 times greater and 1.8 times greater as compared with 6T-SRAM cell.
IJERA (International journal of Engineering Research and Applications) is International online, ... peer reviewed journal. For more detail or submit your article, please visit www.ijera.com
IJERA (International journal of Engineering Research and Applications) is International online, ... peer reviewed journal. For more detail or submit your article, please visit www.ijera.com
STUDY OF SPIN TRANSFER TORQUE (STT) AND SPIN ORBIT TORQUE (SOT) MAGNETIC TUNN...elelijjournal
Magnetic Random Access Memory (MRAM) is a promising candidate to be the universal non-volatile (NV) storage device. The Magnetic Tunnel Junction (MTJ) is the cornerstone of the NV-MRAM technology. 2- terminal MTJ based on Spin Transfer Torque (STT) switching is considered as a hot topic for academic and industrial researchers. Moreover, the 3-terminal Spin Orbit Torque (SOT) MTJ has recently been considered as a hopeful device which provides an increased reliability thanks to independent write and read paths. Since both MTJ devices (STT and SOT) seem to revolutionize the data storage market, it is necessary to explore their compatibility with very advanced CMOS processes in terms of transistor sizing and performance. Assuming a good maturity of the magnetic processes that would enable to fabricate small junctions, simulation results show that the existing advanced sub-micronic CMOS processes can drive the required writing current with reasonable size of transistors confirming the high density feature of MRAMs. At 28 nm node, the minimum transistor size can be used by the STT device. The SOT device shows remarkable energy efficiency with 6× improvement compared with the STT technology. Results are very encouraging for future complex hybrid magnetic/CMOS integrated circuits (ICs).
IJERA (International journal of Engineering Research and Applications) is International online, ... peer reviewed journal. For more detail or submit your article, please visit www.ijera.com
Implementation of an Efficient SRAM for Ultra-Low Voltage Application Based o...IOSR Journals
Abstract: Operation of standard 6T static random access memory (SRAM) cells at sub or near threshold
voltages is unfeasible, predominantly due to degraded static noise margins (SNM) and poor robustness. We
analyze Schmitt-Trigger (ST)-based differential-sensing static random access memory (SRAM) bitcells for
ultralow-voltage operation. The ST-based SRAM bitcells address the fundamental conflicting design
requirement of the read versus write operation of a conventional 6T bitcell. The ST operation gives better readstability
as well as better write-ability compared to the standard 6T bitcell. In this paper we are going to
propose a new SRAM bitcell for the purpose of read stability and write ability by using 90nm technology , and
less power consumption, less area than the existing Schmitt trigger1 based SRAM. Design and simulations were done using DSCH and Microwind.
Index Terms: read stability, write ability, Schmitt trigger.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
A Comparitive Analysis of Improved 6t Sram Cell With Different Sram CellIJERA Editor
High speed and low power consumption have been the primary issue to design Static Random Access Memory (SRAM), but we are facing new challenges with the scaling of technology. The stability and speed of SRAM are important issues to improve efficiency and performance of the system. Stability of the SRAM depends on the static noise margin (SNM) so the noise margin is also important parameter for the design of memory because the higher noise margin confirms the high speed of the SRAM cell. In this paper, the improved 6T SRAM cell shows maximum reduction in power consumption of 88%, maximum reduction in delay of 64% and maximum SNM of 17% increases compared with 7T SRAM cell.
Design and Simulation Low power SRAM Circuitsijsrd.com
SRAMs), focusing on optimizing delay and power. As the scaling trends in the speed and power of SRAMs with size and technology and find that the SRAM delay scales as the logarithm of its size as long as the interconnect delay is negligible. Non-scaling of threshold mismatches with process scaling, causes the signal swings in the bitlines and data lines also not to scale, leading to an increase in the relative delay of an SRAM, across technology generations. Appropriate methods for reduction of power consumption were studied such as capacitance reduction, very low operating voltages, DC and AC current reduction and suppression of leakage currents to name a few.. Many of reviewed techniques are applicable to other applications such as ASICs, DSPs, etc. Battery and solar-cell operation requires an operating voltage environment in low voltage area. These conditions demand new design approaches and more sophisticated concepts to retain high device reliability. The proposed techniques (USRS and LPRS) are topology based and hence easier to implement.
SPIN TORQUE TRANSFER MRAM AS A UNIVERSAL MEMORYIJERA Editor
The current multi-core era has resulted in the integration of increasing numbers of cores into the
microprocessors used to power computers and cell phones. Spin-Transfer Torque RAM (STT-RAM) is an
emerging non-volatile memory technology with the potential to be used as universal memory. STT MRAM with
read and write current is discusses here . In addition to that application of STT MRAM as a cache design is also
discussed.
This paper investigates the leakage current, static noise margin (SNM), delay and energy consumption of a
6 transistor FinFET based static random-access memory (SRAM) cell due to the variation in design and
operating parameters of the SRAM cell. The SRAM design and operating parameters considered in this
investigation are transistor sizing, supply voltage, word-line voltage, temperature and PFET and NFET
back gate biasing. This investigation is performed using a 11nm FinFET shorted gate and low power
technology models. Based on the investigation results, we propose a robust 6 transistor SRAM cells with
optimized performance using shorted gate and independent gate low power FinFET models. By optimizing
the design parameters of the cell, the shorted-gate design shows an improvement of read SNM of 261.56mV
and an improvement of hold SNM of 87.68mV when compared to a shorted-gate cell with standard design
parameters. The low-power design shows an improvement of read SNM of 146.18mV and a marginal
decrease in hold SNM of 22.84mV when compared to a low-power cell with standard design parameters.
Both the cells with the new optimized design parameters are shown to improve the overall SNM of the cells
with minimal impact on the subthreshold leakage currents, performance and energy consumption.
This paper investigates the leakage current, static noise margin (SNM), delay and energy consumption of a
6 transistor FinFET based static random-access memory (SRAM) cell due to the variation in design and
operating parameters of the SRAM cell. The SRAM design and operating parameters considered in this
investigation are transistor sizing, supply voltage, word-line voltage, temperature and PFET and NFET
back gate biasing. This investigation is performed using a 11nm FinFET shorted gate and low power
technology models. Based on the investigation results, we propose a robust 6 transistor SRAM cells with
optimized performance using shorted gate and independent gate low power FinFET models. By optimizing
the design parameters of the cell, the shorted-gate design shows an improvement of read SNM of 261.56mV
and an improvement of hold SNM of 87.68mV when compared to a shorted-gate cell with standard design
parameters. The low-power design shows an improvement of read SNM of 146.18mV and a marginal
decrease in hold SNM of 22.84mV when compared to a low-power cell with standard design parameters.
Both the cells with the new optimized design parameters are shown to improve the overall SNM of the cells
with minimal impact on the subthreshold leakage currents, performance and energy consumption.
This paper investigates the leakage current, static noise margin (SNM), delay and energy consumption of a 6 transistor FinFET based static random-access memory (SRAM) cell due to the variation in design and operating parameters of the SRAM cell. The SRAM design and operating parameters considered in this
investigation are transistor sizing, supply voltage, word-line voltage, temperature and PFET and NFET back gate biasing. This investigation is performed using a 11nm FinFET shorted gate and low power technology models. Based on the investigation results, we propose a robust 6 transistor SRAM cells with optimized performance using shorted gate and independent gate low power FinFET models. By optimizing
the design parameters of the cell, the shorted-gate design shows an improvement of read SNM of 261.56mV and an improvement of hold SNM of 87.68mV when compared to a shorted-gate cell with standard design parameters. The low-power design shows an improvement of read SNM of 146.18mV and a marginal decrease in hold SNM of 22.84mV when compared to a low-power cell with standard design parameters.
Both the cells with the new optimized design parameters are shown to improve the overall SNM of the cells with minimal impact on the subthreshold leakage currents, performance and energy consumption.
PERFORMANCE EVALUATION OF DIFFERENT SRAM CELL STRUCTURES AT DIFFERENT TECHNOL...VLSICS Design
In recent years the demand for low power devices has been increases tremendously. To solve the power dissipation problem, many researchers have proposed different ideas from the device level to the architectural level and above. However, there is no universal way to avoid tradeoffs between power, delay and area, thus designers are required to choose appropriate techniques that satisfy application and product needs. The demand for static random-access memory (SRAM) is increasing with large use of SRAM in System On-Chip and high-performance VLSI circuits. This paper represents the simulation of different SRAM cells and their comparative analysis on different parameters such as Power Supply Voltage, area efficiency etc to enhance the performance. All the simulations have been carried out on BSIM 3V3 90nm, 45nm and 32 technology at Tanner EDA tool.
An Innovative Design solution for minimizing Power Dissipation in SRAM CellIJERA Editor
Over the years, the development of the logic on the chip is increased. To sustain and drive the logic flow, various techniques and SRAM cell designs have been implemented. The basic element of memory design is 6T SRAM cell. But while dealing with this 6T SRAM cell there are some issues with the parametric analysis on the performance of the cell. This paper presents an innovative design idea of new 8T RAM cell with various parametric analysis. The proposed cell is compared with the standard cell in terms of different parameters such as area, speed and power consumption along with the loading effect with the increase in load capacitance on the cell. The structure is designed with CMOS 45 nm Technology with BSIM 4 MOS modelling using Microwind 3.5 software tool
Similar to MTJ-Based Nonvolatile 9T SRAM Cell (20)
Now-a-days, Internet has become an important part of human’s life, a person
can shop, invest, and perform all the banking task online. Almost, all the organizations have
their own website, where customer can perform all the task like shopping, they only have to
provide their credit card details. Online banking and e-commerce organizations have been
experiencing the increase in credit card transaction and other modes of on-line transaction.
Due to this credit card fraud becomes a very popular issue for credit card industry, it causes
many financial losses for customer and also for the organization. Many techniques like
Decision Tree, Neural Networks, Genetic Algorithm based on modern techniques like
Artificial Intelligence, Machine Learning, and Fuzzy Logic have been already developed for
credit card fraud detection. In this paper, an evolutionary Simulated Annealing algorithm is
used to train the Neural Networks for Credit Card fraud detection in real-time scenario.
This paper shows how this technique can be used for credit card fraud detection and
present all the detailed experimental results found when using this technique on real world
financial data (data are taken from UCI repository) to show the effectiveness of this
technique. The algorithm used in this paper are likely beneficial for the organizations and
for individual users in terms of cost and time efficiency. Still there are many cases which are
misclassified i.e. A genuine customer is classified as fraud customer or vise-versa.
Wireless sensor networks (WSN) have been widely used in various applications.
In these networks nodes collect data from the attached sensors and send their data to a base
station. However, nodes in WSN have limited power supply in form of battery so the nodes
are expected to minimize energy consumption in order to maximize the lifetime of WSN. A
number of techniques have been proposed in the literature to reduce the energy
consumption significantly. In this paper, we propose a new clustering based technique
which is a modification of the popular LEACH algorithm. In this technique, first cluster
heads are elected using the improved LEACH algorithm as usual, and then a cluster of
nodes is formed based on the distance between node and cluster head. Finally, data from
node is transferred to cluster head. Cluster heads forward data, after applying aggregation,
to the cluster head that is closer to it than sink in forward direction or directly to the sink.
This reduction in distance travelled improves the performance over LEACH algorithm
significantly.
The next generation wireless networks comprises of mobile users moving
between heterogeneous networks, using terminals with multiple access interfaces and
services. The most important issue in such environment is ABC (Always Best Connected) i.e.
allowing the best connectivity to applications anywhere at any time. For always best
connectivity requirement various vertical handover strategies for decision making have
been proposed. This paper provides an overview of the most interesting and recent
strategies.
This paper presents the design and performance comparison of a two stage
operational amplifier topology using CMOS and BiCMOS technology. This conventional op
amp circuit was designed by using RF model of BSIM3V3 in 0.6 μm CMOS technology and
0.35 μm BiCMOS technology. Both the op amp circuits were designed and simulated,
analyzed and performance parameters are compared. The performance parameters such as
gain, phase margin, CMRR, PSRR, power consumption etc achieved are compared. Finally,
we conclude the suitability of CMOS technology over BiCMOS technology for low power
RF design.
In Cognitive Radio Networks (CRN), Cooperative Spectrum Sensing (CSS) is
used to improve performance of spectrum sensing techniques used for detection of licensed
(Primary) user’s signal. In CSS, the spectrum sensing information from multiple unlicensed
(Secondary) users are combined to take final decision about presence of primary signal. The
mixing techniques used to generate final decision about presence of PU’s signal are also
called as Fusion techniques / rules. The fusion techniques are further classified as data
fusion and decision fusion techniques. In data fusion technique all the secondary users
(SUs) share their raw information of spectrum detection like detected energy or other
statistical information, while in decision fusion technique all the SUs take their local
decisions and share the decision by sending ‘0’ or ‘1’ corresponding to absence and presence
of PU’s signal respectively. The rules used in decision fusion techniques are OR rule, AND
rule and K-out-of-N rule. The CSS is further classified as distributed CSS and centralized
CSS. In distributed CSS all the SUs share the spectrum detection information with each
other and by mixing the shared information; all the SUs take final decision individually. In
centralized CSS all the SUs send their detected information to a secondary base station /
central unit which combines the shared information and takes final decision. The secondary
base station shares the final decision with all the SUs in the CRN. This paper covers
overview of information fusion methods used for CSS and analysis of decision fusion rules
with simulation results.
ZigBee has been developed to support lower data rates and low power consuming
applications. This paper targets to analyze various parameters of ZigBee physical (PHY).
Performance of ZigBee PHY is evaluated on the basis of energy consumption in
transmitting and receiving mode and throughput. Effect of variation in network size is
studied on these performance attributes. Some modulation schemes are also compared and
the best modulation scheme is suggested with tradeoffs between different performance
metrics.
This paper gives a brief idea of the moving objects tracking and its application.
In sport it is challenging to track and detect motion of players in video frames. Task
represents optical flow analysis to do motion detection and particle filter to track players
and taking consideration of regions with movement of players in sports video. Optical flow
vector calculation gives motion of players in video frame. This paper presents improved
Luacs Kanade algorithm explained for optical flow computation for large displacement and
more accuracy in motion estimation.
A rapid progress is seen in the field of robotics both in educational and industrial
automation sectors. The Robotics education in particular is gaining technological advances
and providing more learning opportunities. In automotive sector, there is a necessity and
demand to automate daily human activities by robot. With such an advancement and
demand for robotics, the realization of a popular computer game will help students to learn
and acquire skills in the field of robotics. The computer game such as Pacman offers
challenges on both software and hardware fronts. In software, it provides challenges in
developing algorithms for a robot to escape from the pool of attacking robots and to develop
algorithms for multiple ghost robots to attack the Pacman. On the hardware front, it
provides a challenge to integrate various systems to realize the game. This project aims to
demonstrate the pacman game in real world as well as in simulation. For simulation
purpose Player/Stage is used to develop single-client and multi-client architectures. The
multi- client architecture in player/stage uses one global simulation proxy to which all the
robot models are connected. This reduces the overhead to manage multiple robots proxy.
The single-client architecture enables only two robot models to connect to the simulation
proxy. Multi-client approach offers flexibility to add sensors to each port which will be used
distinctly by the client attached to the respective robot. The robots are named as Pacman
and Ghosts, which try to escape and attack respectively. Use of Network Camera has been
done to detect the global positions of the robots and data is shared through inter-process
communication.
In Content-Based Image Retrieval (CBIR) systems, the visual contents of the
images in the database are took out and represented by multi-dimensional characteristic
vectors. A well known CBIR system that retrieves images by unsupervised method known
as cluster based image retrieval system. For enhancing the performance and retrieval rate
of CBIR system, we fuse the visual contents of an image. Recently, we developed two
cluster-based CBIR systems by fusing the scores of two visual contents of an image. In this
paper, we analyzed the performance of the two recommended CBIR systems at different
levels of precision using images of varying sizes and resolutions. We also compared the
performance of the recommended systems with that of the other two existing CBIR systems
namely UFM and CLUE. Experimentally, we find that the recommended systems
outperform the other two existing systems and one recommended system also comparatively
performed better in every resolution of image.
Information Systems and Networks are subjected to electronic attacks. When
network attacks hit, organizations are thrown into crisis mode. From the IT department to
call centers, to the board room and beyond, all are fraught with danger until the situation is
under control. Traditional methods which are used to overcome these threats (e.g. firewall,
antivirus software, password protection etc.) do not provide complete security to the system.
This encourages the researchers to develop an Intrusion Detection System which is capable
of detecting and responding to such events. This review paper presents a comprehensive
study of Genetic Algorithm (GA) based Intrusion Detection System (IDS). It provides a
brief overview of rule-based IDS, elaborates the implementation issues of Genetic Algorithm
and also presents a comparative analysis of existing studies.
Step by step operations by which we make a group of objects in which attributes
of all the objects are nearly similar, known as clustering. So, a cluster is a collection of
objects that acquire nearly same attribute values. The property of an object in a cluster is
similar to other objects in same cluster but different with objects of other clusters.
Clustering is used in wide range of applications like pattern recognition, image processing,
data analysis, machine learning etc. Nowadays, more attention has been put on categorical
data rather than numerical data. Where, the range of numerical attributes organizes in a
class like small, medium, high, and so on. There is wide range of algorithm that used to
make clusters of given categorical data. Our approach is to enhance the working on well-
known clustering algorithm k-modes to improve accuracy of algorithm. We proposed a new
approach named “High Accuracy Clustering Algorithm for Categorical datasets”.
Brain tumor is a malformed growth of cells within brain which may be
cancerous or non-cancerous. The term ‘malformed’ indicates the existence of tumor. The
tumor may be benign or malignant and it needs medical support for further classification.
Brain tumor must be detected, diagnosed and evaluated in earliest stage. The medical
problems become grave if tumor is detected at the later stage. Out of various technologies
available for diagnosis of brain tumor, MRI is the preferred technology which enables the
diagnosis and evaluation of brain tumor. The current work presents various clustering
techniques that are employed to detect brain tumor. The classification involves classification
of images into normal and malformed (if detected the tumor). The algorithm deals with
steps such as preprocessing, segmentation, feature extraction and classification of MR brain
images. Finally, the confirmatory step is specifying the tumor area by technique called
region of interest.
A Proxy signature scheme enables a proxy signer to sign a message on behalf of
the original signer. In this paper, we propose ECDLP based solution for chen et. al [1]
scheme. We describe efficient and secure Proxy multi signature scheme that satisfy all the
proxy requirements and require only elliptic curve multiplication and elliptic curve addition
which needs less computation overhead compared to modular exponentiations also our
scheme is withstand against original signer forgery and public key substitution attack.
Water marking has been proposed as a method to enhance data security. Text
water marking requires extreme care when embedding additional data within the images
because the additional information must not affect the image quality. Digital water marking
is a method through which we can authenticate images, videos and even texts. Add text
water mark and image water mark to your photos or animated image, protect your
copyright avoid unauthorized use. Water marking functions are not only authentication, but
also protection for such documents against malicious intentions to change such documents
or even claim the rights of such documents. Water marking scheme that hides water
marking in method, not affect the image quality. In this paper method of hiding a data using
LSB replacement technique is proposed.
Today among various medium of data transmission or storage our sensitive data
are not secured with a third-party, that we used to take help of. Cryptography plays an
important role in securing our data from malicious attack. This paper present a partial
image encryption based on bit-planes permutation using Peter De Jong chaotic map for
secure image transmission and storage. The proposed partial image encryption is a raw data
encryption method where bits of some bit-planes are shuffled among other bit-planes based
on chaotic maps proposed by Peter De Jong. By using the chaotic behavior of the Peter De
Jong map the position of all the bit-planes are permuted. The result of the several
experimental, correlation analysis and sensitivity test shows that the proposed image
encryption scheme provides an efficient and secure way for real-time image encryption and
decryption.
This paper presents a survey of Dependency Analysis of Service Oriented
Architecture (SOA) based systems. SOA presents newer aspects of dependency analysis due
to its different architectural style and programming paradigm. This paper surveys the
previous work taken on dependency analysis of service oriented systems. This study shows
the strengths and weaknesses of current approaches and tools available for dependency
analysis task in context of SOA. The main motivation of this work is to summarize the
recent approaches in this field of research, identify major issue and challenges in
dependency analysis of SOA based systems and motivate further research on this topic.
In this paper, proposed a novel implementation of a Soft-Core system using
micro-blaze processor with virtex-5 FPGA. Till now Hard-Core processors are used in
FPGA processor cores. Hard cores are a fixed gate-level IP functions within the FPGA
fabrics. Now the proposed processor is Soft-Core Processor, this is a microprocessor fully
described in software, usually in an HDL. This can be implemented by using EDK tool. In
this paper, developed a system which is having a micro-blaze processor is the combination
of both hardware & Software. By using this system, user can control and communicate all
the peripherals which are in the supported board by using Xilinx platform to develop an
embedded system. Implementing of Soft-Core process system with different peripherals like
UART interface, SPA flash interface, SRAM interface has to be designed using Xilinx
Embedded Development Kit (EDK) tools.
The article presents a simple algorithm to construct minimum spanning tree and
to find shortest path between pair of vertices in a graph. Our illustration includes the proof
of termination. The complexity analysis and simulation results have also been included.
Wimax technology has reshaped the framework of broadband wireless internet
service. It provides the internet service to unconnected or detached areas such as east South
Africa, rural areas of America and Asia region. Full duplex helpers employed with one of
the relay stations selection and indexing method that is Randomized Distributed Space Time
are used to expand the coverage area of primary Wimax station. The basic problem was
identified at cell edge due to weather conditions (rain, fog), insertion of destruction because
of multiple paths in the same communication channel and due to interference created by
other users in that communication. It is impractical task for the receiver station to decode
the transmitted signal successfully at the cell edges, which increases the high packet loss and
retransmissions. But Wimax is a outstanding technology which is used for improving the
quality of internet service and also it offers various services like Voice over Internet
Protocol, Video conferencing and Multimedia broadcast etc where a little delay in packet
transmission can cause a big loss in the communication. Even setup and initialization of
another Wimax station nearer to each other is not a good alternate, where any mobile
station can easily handover to another base station if it gets a strong signal from other one.
But in rural areas, for few numbers of customers, installation of base station nearer to each
other is costlier task. In this review article, we present a scheme using R-DSTC technique to
choose and select helpers (relay nodes) randomly to expand the coverage area and help to
mobile station as a helper to provide secure communication with base station. In this work,
we use full duplex helpers for better utilization of bandwidth.
Radio Frequency identification (RFID) technology has become emerging
technique for tracking and items identification. Depend upon the function; various RFID
technologies could be used. Drawback of passive RFID technology, associated to the range
of reading tags and assurance in difficult environmental condition, puts boundaries on
performance in the real life situation [1]. To improve the range of reading tags and
assurance, we consider implementing active backscattering tag technology. For making
mobiles of multiple radio standards in 4G network; the Software Defined Radio (SDR)
technology is used. Restrictions in Existing RFID technologies and SDR technology, can be
eliminated by the development and implementation of the Software Defined Radio (SDR)
active backscattering tag compatible with the EPC global UHF Class 1 Generation 2 (Gen2)
RFID standard. Such technology can be used for many of applications and services.
Model Attribute Check Company Auto PropertyCeline George
In Odoo, the multi-company feature allows you to manage multiple companies within a single Odoo database instance. Each company can have its own configurations while still sharing common resources such as products, customers, and suppliers.
The French Revolution, which began in 1789, was a period of radical social and political upheaval in France. It marked the decline of absolute monarchies, the rise of secular and democratic republics, and the eventual rise of Napoleon Bonaparte. This revolutionary period is crucial in understanding the transition from feudalism to modernity in Europe.
For more information, visit-www.vavaclasses.com
Biological screening of herbal drugs: Introduction and Need for
Phyto-Pharmacological Screening, New Strategies for evaluating
Natural Products, In vitro evaluation techniques for Antioxidants, Antimicrobial and Anticancer drugs. In vivo evaluation techniques
for Anti-inflammatory, Antiulcer, Anticancer, Wound healing, Antidiabetic, Hepatoprotective, Cardio protective, Diuretics and
Antifertility, Toxicity studies as per OECD guidelines
Unit 8 - Information and Communication Technology (Paper I).pdfThiyagu K
This slides describes the basic concepts of ICT, basics of Email, Emerging Technology and Digital Initiatives in Education. This presentations aligns with the UGC Paper I syllabus.
Introduction to AI for Nonprofits with Tapp NetworkTechSoup
Dive into the world of AI! Experts Jon Hill and Tareq Monaur will guide you through AI's role in enhancing nonprofit websites and basic marketing strategies, making it easy to understand and apply.
June 3, 2024 Anti-Semitism Letter Sent to MIT President Kornbluth and MIT Cor...Levi Shapiro
Letter from the Congress of the United States regarding Anti-Semitism sent June 3rd to MIT President Sally Kornbluth, MIT Corp Chair, Mark Gorenberg
Dear Dr. Kornbluth and Mr. Gorenberg,
The US House of Representatives is deeply concerned by ongoing and pervasive acts of antisemitic
harassment and intimidation at the Massachusetts Institute of Technology (MIT). Failing to act decisively to ensure a safe learning environment for all students would be a grave dereliction of your responsibilities as President of MIT and Chair of the MIT Corporation.
This Congress will not stand idly by and allow an environment hostile to Jewish students to persist. The House believes that your institution is in violation of Title VI of the Civil Rights Act, and the inability or
unwillingness to rectify this violation through action requires accountability.
Postsecondary education is a unique opportunity for students to learn and have their ideas and beliefs challenged. However, universities receiving hundreds of millions of federal funds annually have denied
students that opportunity and have been hijacked to become venues for the promotion of terrorism, antisemitic harassment and intimidation, unlawful encampments, and in some cases, assaults and riots.
The House of Representatives will not countenance the use of federal funds to indoctrinate students into hateful, antisemitic, anti-American supporters of terrorism. Investigations into campus antisemitism by the Committee on Education and the Workforce and the Committee on Ways and Means have been expanded into a Congress-wide probe across all relevant jurisdictions to address this national crisis. The undersigned Committees will conduct oversight into the use of federal funds at MIT and its learning environment under authorities granted to each Committee.
• The Committee on Education and the Workforce has been investigating your institution since December 7, 2023. The Committee has broad jurisdiction over postsecondary education, including its compliance with Title VI of the Civil Rights Act, campus safety concerns over disruptions to the learning environment, and the awarding of federal student aid under the Higher Education Act.
• The Committee on Oversight and Accountability is investigating the sources of funding and other support flowing to groups espousing pro-Hamas propaganda and engaged in antisemitic harassment and intimidation of students. The Committee on Oversight and Accountability is the principal oversight committee of the US House of Representatives and has broad authority to investigate “any matter” at “any time” under House Rule X.
• The Committee on Ways and Means has been investigating several universities since November 15, 2023, when the Committee held a hearing entitled From Ivory Towers to Dark Corners: Investigating the Nexus Between Antisemitism, Tax-Exempt Universities, and Terror Financing. The Committee followed the hearing with letters to those institutions on January 10, 202
Embracing GenAI - A Strategic ImperativePeter Windle
Artificial Intelligence (AI) technologies such as Generative AI, Image Generators and Large Language Models have had a dramatic impact on teaching, learning and assessment over the past 18 months. The most immediate threat AI posed was to Academic Integrity with Higher Education Institutes (HEIs) focusing their efforts on combating the use of GenAI in assessment. Guidelines were developed for staff and students, policies put in place too. Innovative educators have forged paths in the use of Generative AI for teaching, learning and assessments leading to pockets of transformation springing up across HEIs, often with little or no top-down guidance, support or direction.
This Gasta posits a strategic approach to integrating AI into HEIs to prepare staff, students and the curriculum for an evolving world and workplace. We will highlight the advantages of working with these technologies beyond the realm of teaching, learning and assessment by considering prompt engineering skills, industry impact, curriculum changes, and the need for staff upskilling. In contrast, not engaging strategically with Generative AI poses risks, including falling behind peers, missed opportunities and failing to ensure our graduates remain employable. The rapid evolution of AI technologies necessitates a proactive and strategic approach if we are to remain relevant.
Francesca Gottschalk - How can education support child empowerment.pptxEduSkills OECD
Francesca Gottschalk from the OECD’s Centre for Educational Research and Innovation presents at the Ask an Expert Webinar: How can education support child empowerment?
Honest Reviews of Tim Han LMA Course Program.pptxtimhan337
Personal development courses are widely available today, with each one promising life-changing outcomes. Tim Han’s Life Mastery Achievers (LMA) Course has drawn a lot of interest. In addition to offering my frank assessment of Success Insider’s LMA Course, this piece examines the course’s effects via a variety of Tim Han LMA course reviews and Success Insider comments.
Operation “Blue Star” is the only event in the history of Independent India where the state went into war with its own people. Even after about 40 years it is not clear if it was culmination of states anger over people of the region, a political game of power or start of dictatorial chapter in the democratic setup.
The people of Punjab felt alienated from main stream due to denial of their just demands during a long democratic struggle since independence. As it happen all over the word, it led to militant struggle with great loss of lives of military, police and civilian personnel. Killing of Indira Gandhi and massacre of innocent Sikhs in Delhi and other India cities was also associated with this movement.