Designed a fully customized 128x10b SRAM by constructing schematic & virtuoso layout of memory cell array (6T cell), row & column decoder, pre-charge circuit, write circuit and sense amplifier using Cadence. Manually placed and routed all components, performed DRC & LVS debugging of constructed schematic and layout and ran PEX to generate the final Netlist, Hspice Spectre simulation of final design for verification of the correct functionality and analysis of best read, best write cycles & the worst case timing for read and write. Timing and power consumed is analyzed through STA-Primetime (Static timing Analysis)
I have prepared it to create an understanding of delay modeling in VLSI.
Regards,
Vishal Sharma
Doctoral Research Scholar,
IIT Indore
vishalfzd@gmail.com
In the project#1, IBM 130nm process is used to design and manual layout a 128 word SRAM, with word size 10bits. Cadence's Virtuoso is applied for layout editing, DRC and LVS running and circuit simulation.
This presentation discusses the basics of Pass Transistor Logic, its advantages, limitation and finally implementation of Boolean functions/Combinational Logic circuits using Pass Transistor Logic.
I have prepared it to create an understanding of delay modeling in VLSI.
Regards,
Vishal Sharma
Doctoral Research Scholar,
IIT Indore
vishalfzd@gmail.com
In the project#1, IBM 130nm process is used to design and manual layout a 128 word SRAM, with word size 10bits. Cadence's Virtuoso is applied for layout editing, DRC and LVS running and circuit simulation.
This presentation discusses the basics of Pass Transistor Logic, its advantages, limitation and finally implementation of Boolean functions/Combinational Logic circuits using Pass Transistor Logic.
Design of a 64-bit ultra low latency memory using 6T SRAM cells and PDK 45nm technology on CADENCE to simulate the results of our chosen implementation.
Routing in Integrated circuits is an important task which requires extreme care while placing the modules and circuits and connecting them with each other.
Reduced channel length cause departures from long channel behaviour as two-dimensional potential distribution and high electric fields give birth to Short channel effects.
DIFFERENTIAL AMPLIFIER using MOSFET, Modes of operation,
The MOS differential pair with a common-mode input voltage ,Common mode rejection,gain, advantages and disadvantages.
IOSR Journal of Electronics and Communication Engineering(IOSR-JECE) is an open access international journal that provides rapid publication (within a month) of articles in all areas of electronics and communication engineering and its applications. The journal welcomes publications of high quality papers on theoretical developments and practical applications in electronics and communication engineering. Original research papers, state-of-the-art reviews, and high quality technical notes are invited for publications.
Design of a 64-bit ultra low latency memory using 6T SRAM cells and PDK 45nm technology on CADENCE to simulate the results of our chosen implementation.
Routing in Integrated circuits is an important task which requires extreme care while placing the modules and circuits and connecting them with each other.
Reduced channel length cause departures from long channel behaviour as two-dimensional potential distribution and high electric fields give birth to Short channel effects.
DIFFERENTIAL AMPLIFIER using MOSFET, Modes of operation,
The MOS differential pair with a common-mode input voltage ,Common mode rejection,gain, advantages and disadvantages.
IOSR Journal of Electronics and Communication Engineering(IOSR-JECE) is an open access international journal that provides rapid publication (within a month) of articles in all areas of electronics and communication engineering and its applications. The journal welcomes publications of high quality papers on theoretical developments and practical applications in electronics and communication engineering. Original research papers, state-of-the-art reviews, and high quality technical notes are invited for publications.
• Designed schematics and layout for a 0.8V powered 512 bit SRAM memory system and arithmetic unit using 45nm transistor technology. Achieved functionality at a clock frequency of 1 GHz with a power dissipation of 0.9W.
• Designed SRAM Cell array schematic & layout and registers using True Single-Phase Clock (TSPC) schematic.
• Schematics and layout were drawn in Cadence Virtuoso using Hspice simulator. The power dissipation varied between the schematic and layout by 0.02%.
Large number of interconnection
requirement has become a major limitation to the designs
using binary logic. One of the solutions for this is MultipleValued
Logic (MVL). MVL proves to be advantageous as it
reduces dynamic power dissipation, increases computational
ability, data density and requires less number of
interconnects. In this paper, the implementation of a Static
Random Access Memory (SRAM) cell using a quaternary D
Latch is proposed. The D Latch is built using NMAX, NMIN
and quaternary inverter circuit. Using this SRAM cell a 4X4
SRAM array is constructed and is compared with 4X4 array
of Quaternary Static CMOS memory cell. The spice coding
is done using 0.18μm CMOS technology and verification of
the design is done through HSPICE and COSMOSSCOPE
Synopsis Tools. Power and delay of the circuit is analyzed.
A Simplied Bit-Line Technique for Memory Optimizationijsrd.com
High fan-in and fan-out in read-write of memory requires more area, power, and causes large propagation delay .The number of transistor counts also increases due to large fan-in and fan-out. A simplified bit line technique for power optimization of memory proposed consumes steady power, requires less number of transistors and hence reduces the propagation delay for any fan-in and fan-out of read-write memory. Adopting simplified bit line technique, we implemented 32-word 16-bits/word, 32-word 16-bits/word and so on, 1-read, 1-write ported register files in a 1.2-V/2.5V. By using this technique 2n word x m-bits/words can be achieved with steady power consumption of 2.4mW for 1.2V/2.5V, this power consumption can be further reduced to half of present level by constraining the parameters such as temperature, speed, frequency of operation etc for processing technology.
Low power sram design using block partitioningeSAT Journals
Abstract
Technology scaling results in significant increase of leakage currents in MOS devices due to which power consumption in Nano scale
devices increases. As memory accounts for the largest share of power consumption, thus there is need to design such a memory which
will consume less power.
Through this paper, we propose a systematic approach by Block partitioning which provides a methodology for reducing the dynamic
power consumption of SRAM (static random access memory). Dynamic power dissipation in memory is due to charging/discharging
of long capacitive lines (bit line and world line). So by block partitioning our goal is to reduce length of world line as well as bit line
capacitances. instead of implementing 1KB SRAM at a time we are designing four blocks of 256 byte RAM, which reduces world
line from 1024 bits to 256 bits. We implemented our design on TANNER TOOL using 180 nm technology
Keywords-Low power, SRAM, 6T cell, Dynamic power.
IJRET : International Journal of Research in Engineering and Technology is an international peer reviewed, online journal published by eSAT Publishing House for the enhancement of research in various disciplines of Engineering and Technology. The aim and scope of the journal is to provide an academic medium and an important reference for the advancement and dissemination of research results that support high-level learning, teaching and research in the fields of Engineering and Technology. We bring together Scientists, Academician, Field Engineers, Scholars and Students of related fields of Engineering and Technology
The International Journal of Engineering and Science (The IJES)theijes
The International Journal of Engineering & Science is aimed at providing a platform for researchers, engineers, scientists, or educators to publish their original research results, to exchange new ideas, to disseminate information in innovative designs, engineering experiences and technological skills. It is also the Journal's objective to promote engineering and technology education. All papers submitted to the Journal will be blind peer-reviewed. Only original articles will be published.
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- Implemented a RTL model of the MSDAP chip which consists of a Controller, ALU, Memories and Serial communication Unit.
- Synthesized the design in Synopsys Design Vision and functionality was verified using the Modelsim
- Final physical design was generated using the IC Compiler.
Designed a 21b X 21b multiplier using Booth-2 algorithm by constructing schematic of decoder, partial product generation & compression and Adder (Carry Look Ahead). Performed Hspice simulation to verify the correct functionality, library characterization of assembled Netlist using Siliconsmart ACE, RTL synthesis of generated library. Timing and power consumed is analyzed through static timing analysis using Synopsys Primetime.
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- Implemented the VHDL code on Nexys 3 Spartan FPGA board which involved simulation, synthesis and bit file generation using Xilinx ISE,programming the FPGA with Digilent Adept.
- Employed the debug mode to make the design more user friendly
- An outhouse project completed at Progressive Powercon Pvt. Ltd., Pune, India. Aim is to design and implement a low cost solar electricity generation system for household use.
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- PIC 16f876A is used as a microcontroller fro PWM Control. All the simulation are performed in PSIM 6.0. PCB layout is carried out in ALTIUM DESIGNER Summer 09 Software.
- Designed a standard cells with gates including Inverter, two input NAND, two Input NOR, two Input XOR, 2:1 Multiplexer, AOI22, OAI3222 and D Flip Flop with minimum area & diffusion breaks by using IBM130 nm process technology.
- Involved library characterization using NCX, RTL synthesis of VHDL code of 32 bit ALU Chip design using Synopsys Design Vision.
Compared the performance of several branch predictor types with different RAS configurations and Branch Target Buffer configurations for three individual benchmarks namely GCC,GO and ANAGRAM using the SIMPLESCALAR simulator. Cycles per instruction(CPI),Address rate and Direction rate were the parameters used to compare and draw conclusions.
Designed a differential input and single ended output high gain (>= 85 dB) operational amplifier using CMOS 0.35um technology using a single independent current source. The amplifier was also designed to achieve a CMRR (>= 80dB), Average Slew Rate (>= 15 V/us), UGF (>= 15 MHz) & Output Voltage Swing ( >= 1.4V). The maximum power dissipation through the complete circuit including the current source branch was limited to 0.3 mW.
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Automated Traffic Density Detection and Speed MonitoringBharat Biyani
Designed and proposed an RF system to detect speed and traffic density with a RADAR unit in remote areas and to provide real-time monitoring of the traffic density data with a satellite link. Based on calculated parameters, required RF components from real vendors were identified. The system model is then simulated with the obtained parameters in AWR Virtual System Simulator and analyzed nominal and worst case cascaded gain, noise figure, P1dB and OIP3. The general deviation expected in these parameters was determined by performing yield analysis.
32 bit ALU Chip Design using IBM 130nm process technologyBharat Biyani
- Implemented a 32 bit Arithmetic/Logic unit in VHDL using behavioral Modeling which involves all basic ALU operations including special functionality like binary-to-grey code conversion, parity check, sum of first N numbers. Simulation is performed in ModelSim IDE.
- Involved design using Cadence (Virtuoso Layout/Schematic) and Hspice simulation of standard library cell.
- Involved library characterization using NCX, RTL synthesis of VHDL code using Synopsys Design Vision, auto placement & routing using Encounter, static timing analysis using Synopsys Primetime.
ACEP Magazine edition 4th launched on 05.06.2024Rahul
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TOP 10 B TECH COLLEGES IN JAIPUR 2024.pptxnikitacareer3
Looking for the best engineering colleges in Jaipur for 2024?
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VISIT CAREER MANTRA PORTAL TO KNOW MORE ABOUT COLLEGES/UNIVERSITITES in Jaipur:
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SRAM Design
1. SRAM Design and Layout
Project Description
• Design and layout of a 128 word SRAM using the IBM 130nm process. The key
design tools used are Cadence’s Virtuoso for layout editing, DRC (for design rule
checking), LVS (layout versus netlist, for verifying that the layout matches the
schematic netlist) and circuit simulation (for measuring the read/write times).
• Word size is 10bits
• An output capacitance of 30fF is used for all outputs when simulating for delays.
• All input signals, and clocks are provided by inverters sized: PMOS=0.75μm and
NMOS=0.25μm.
Introduction
Static random access memory (SRAM) is a type of volatile semiconductor memory meaning
it stores data as long as it is powered. SRAM uses bi-stable latching circuitry made of
transistors to store each bit. Unlike Dynamic RAM (DRAM), SRAM doesn't have a capacitor
to store the data hence, SRAM works without refreshing. SRAM is often used as a memory
cache.
The most commonly used SRAM cell consists of 6 transistors and this configuration is called
6T Memory Cell. It consists of two cross-coupled inverters and two access transistors.
Figure 1: 6T SRAM Cell
EE 7325 Page 1
2. SRAM Design and Layout
The access transistors are connected to the word line (WL) at their respective gate terminals,
and the bit lines (BL and BLbar) at their source/drain terminals. The word line is used to
select the cell while the bit lines are used to perform read or write operations on the cell.
Read Operation
Figure 2: Read Operation
The read operation of the memory cell is explained in Figure 2. Assume that a “0” is stored
on the left side of the cell, and a “1” on the right side. M1 is on and M2 is off. Initially, BL
and BLbar are pre-charged to VDD. Whenever a row is selected by making the word line
active, access transistors M3 and M4 are turned on. Current begins to flow through M3 and M1
to ground. As a result the cell discharges the capacitance Cbit. On the other side of the cell, the
voltage on M4 remains high since there is no path to ground through M2. The difference
between BL and BLbar is fed to a sense amplifier to generate a valid low output.
Write Operation
Figure 3: Write Operation
EE 7325 Page 2
3. SRAM Design and Layout
In order to write to the cell it has to be attacked from both sides. A “1” is placed on one of the
bit lines and “0” on the other. By doing this we can flip the value that was stored in the cell
and write the new value. The WL transistors need to be ON during read and write operations.
SRAM Implementation
The top level block diagram of the SRAM is shown in Figure 4
Figure 4: Top Level Block Diagram
The signal description is as follows
Port I/O Type Description
WR Input 1 bit Write/Read signal
1- Write
0- Read
clk Input Clock signal
0-Precharge
1-Evaluate
addr0-6 Input 7 bit input address
addr_en Input 1 bit address enable
Word line selected only on addr_en =1
data0-9 Bidirectional 10 bit SRAM data
When WR is
0- Reads the data stored in SRAM
1- Writes the data to SRAM
vdd,vss Inputs Supply(1.2 V) and gnd
128 word SRAM has 128*10 memory cells considering the word size of 10 bits. The cell is
designed to have 40 columns and 32 rows. Hence, we need a 5 bit address line to access one
of the rows/word lines and a 2 bit address line to access one of the four words. The overall
architecture of the memory design is as shown in Figure 5.
EE 7325 Page 3
4. SRAM Design and Layout
Figure 5: Memory Architecture
Now our goal is to design each individual unit of this architecture, integrate and ensure that
the read and write operations are working correctly for the design.
EE 7325 Page 4
5. SRAM Design and Layout
Component Design
• SRAM Cell
The layout and schematic of the designed SRAM cell are illustrated in Figure 6 and 7.
Figure 6: Memory Cell Layout
EE 7325 Page 5
6. SRAM Design and Layout
Figure 7: Memory Cell Schematic
Since there are usually millions of bits to be stored in these memories, in order to achieve the
minimum area, all the transistors are minimum size (0.28μm here).
Width = 2.49 μm, Length = 2.38 μm => Aspect ratio = 푾
푳 = 1.04
Hence, the area per memory cell is 2.49 * 2.38 = 5.92 μm 2
• Precharge Circuit
In both read and write operations, the bitlines are initially pulled up to high voltage.
This is done using a precharge circuit. The schematic of the circuit is as shown in
Figure 9 below. A clock input is applied to the two pull-up transistors, called the
balance transistors, connected between the two bitlines. When the wordline (WL)
signal goes high, one bitline remains high and the other falls until WL goes low. The
layout of the precharge circuit is as shown in Figure 8.
EE 7325 Page 6
7. SRAM Design and Layout
Figure 8: Layout of the Precharge Circuit
Figure 9: Schematic of the Precharge Circuit
EE 7325 Page 7
8. SRAM Design and Layout
• Clock Driver Circuit
Since we have used a clocked precharge circuit to charge the bitlines, it is necessary
to size the clock buffer circuit as well. The sizing of the transistor is as follows:
All calculations are done based on the fact that the clock drives 2 PFETs between
every BL and BL lines. That is it has to drive a total of 2*40 PFETs.
Cpoly = 2 fF/μm* 2μm *2*40 = 320fF
Cwire = 0.2fF/μm * Width of the memory cell*Number of columns
= 0.2fF/μm * 2.38*40 = 19.04fF
CLoad = Cpoly + Cwire = !!".!"
! = 169.52fF
F = GBH= 169.52
Number of stages, N = !"# !"#.!"
!"# !.! = 4 stages
f = F1/N = 3.6
Hence the circuit is as below
Figure 10: Clock Driver Circuit
The sizing equation is Cin = !∗!"#$%
!
4: !∗!"#.!"
!.! = 47.08 => Wp =31.38μm, Wn= 15.69μm
3: !∗!".!"
!.! = 13.08 => Wp =8.72μm, Wn= 4.36μm
2: !∗!".!"
!.! = 3.633 => Wp =2.42μm, Wn= 1.21μm
1: !∗!.!""
!.! = 1.00 => Wp =0.66μm, Wn= 0.33μm
The schematic and layout of the Clock Driver circuit is shown below.
EE 7325 Page 8
Cload
9. SRAM Design and Layout
Figure 11: Layout and Schematic of Clock Driver
EE 7325 Page 9
10. SRAM Design and Layout
• Sense Amplifier
The designed SRAM uses ten identical sense amplifiers to provide simultaneous
output of ten data bits. In our design, we have used a current mode differential input
single ended sense amplifier in order to attenuate the common mode noise and
amplify the differential mode signals. The main reason for using this type of sense
amplifier is to improve the noise immunity and speed of the read circuit. The
differential signal that changes between the two bit lines during read operation is
amplified by the differential pair current mode sense amplifier. The transistors are
sized such that the differential voltage is amplified suitably for read operation. The
output of the sense amplifier is then given to a pair of inverters in order to have a
digital output. Inverted Write (WR) signal is given to the gate of the current source
transistor in order to enable the sense amplifier only during read operation. The
schematic and layout of the sense amplifier are as shown in the figures below.
Figure 10: Sense Amplifier Layout
EE 7325 Page 10
11. SRAM Design and Layout
Figure 11: Sense Amplifier Schematic
• Row Decoder
Access time and power consumption of memories may be largely determined by
decoder design. Row decoders take an n-bit address and produce 2n outputs. Row
decoders are used to select the required row in the memory array. The required
wordline is activated based on the address given to the decoder. In our design we have
32 rows, hence n=5 address bits are used to select a row. Since the row decoder is
used to activate one of the 25 wordlines, it has to be sized suitably using logical effort
based on the capacitance of the wordline. The gate level schematic of one stage of
row decoder is as shown in Figure.
Figure 12: Row Decoder Circuit
EE 7325 Page 11
13. SRAM Design and Layout
Figure 13: Layout and Schematic of Row Decoder
EE 7325 Page 13
14. SRAM Design and Layout
• Column Decoder
After precharging all the bitlines to a high voltage, the next step is to select a column
of the memory cell array that will be involved in the read or write operation. This
column selection is performed using a decoder/multiplexer combination. The m-bit
column address is used to select one or more of the 2m columns. In our case, the array
is designed such that four words are placed in a row with all the first bits of the word
together and so on. The column decoder is hence used to select a bit from among 4
bits hence, 2 bits are used to select a column. The transistors are sized based on the
bitline capacitances. The column decoder is sized as below
Figure 15: Column Decoder
Cpoly = 2 fF/μm* Wn of the Transmission Gate *Number of gates
= 2 fF/μm* 1μm *20 = 40fF
Cwire = 0.2fF/μm * Width of the memory cell*Number of columns
= 0.2fF/μm * 2.38*40 = 19.04fF
CLoad = Cpoly + Cwire = !".!"
! = 29.52fF = H
F = GBH= !
! * 29.52 * 4 = 157.44
Number of stages, N = !"# !"#.!!
!"# !.! = 4 stages
f = F1/N = 3.54
The circuit is modified as shown below to get the required number of stages
EE 7325 Page 14
15. SRAM Design and Layout
Figure 16: One input-output block of the column decoder with the required number of
stages
The gates were sized as follows:
7&9: !∗!".!"
!.!" = 8.33 => Wp =5.55μm, Wn= 2.77μm
6: !∗!.!!
√!.!" = 4.42 => Wp = 2.94μm, Wn= 1.47μm
5&8: !∗!.!"
√!.!" = 2.35 => Wp =1.56μm, Wn= 0.78μm
4:
!
! ∗!∗!.!"
!.!" = 1.77 => Wp =0.88μm, Wn= 0.88μm
1&2: !∗!∗!.!!
!.!" = 1 => Wp =0.66μm, Wn= 0.33μm
3: !∗!∗!.!!
√!.!" = 1.88 => Wp = 1.25μm, Wn= 0.62μm
The layout and schematic of the column decoder are shown below.
EE 7325 Page 15
16. SRAM Design and Layout
Figure 17: Layout and Schematic of the Column Decoder
EE 7325 Page 16
17. SRAM Design and Layout
• Write Driver
During precharge both the BL and BLbar lines are charged to VDD. Before write
operation, one of the bitlines must be driven high and the other low based on the data bit
that is being written. The schematic of the write circuitry that we have used in our design
is shown in Figure 19. During write operation, WR signal goes high and the 8 bit data can
be written by giving required bit values to the corresponding input bits. These values are
then passed through a set of pass transistors that are attached to the BL and BLbar lines so
that the data bit will be written into the corresponding memory cell.
Figure 18: Write Driver Layout
EE 7325 Page 17
18. SRAM Design and Layout
Figure 19: Write Driver Schematic
• Write Enable (WR) Driver
Since the WR signal drives two NFETs in each column, a total of 20 NFETs will be
driven by WR. In addition, its complement is given to the 20 PFETs of the write driver.
Hence, the buffer circuit for WR must be suitably sized so that it drives the required load.
The transistor sizing is as given below. The schematic and the layout of the buffer circuit
are as shown in figure 22 and 23 respectively.
Figure 20: WR Driver
EE 7325 Page 18
19. SRAM Design and Layout
Load to WRbar is
Cpoly = (2 fF/μm* 4.22μm *20) + (2 fF/μm*2*10) = 208.8fF
Cwire = 0.2fF/μm * 2.38*40 = 19.04fF
CLoad = Cpoly + Cwire = !"#.!!!".!"
! = 113.92fF = H
F = GBH= 113.92
Number of stages, N = !"# !!".!"
!"# !.! = 3.69 stages
In order to get the inversion, 5 stages were chosen.
f = F1/N = 2.57
Load to WR is
Cpoly = (2 fF/μm* 0.48μm *20) + (2 fF/μm*2*10) = 59.2fF
Cwire = 0.2fF/μm * 2.38*40 = 19.04fF
CLoad = Cpoly + Cwire = !".!!!".!"
! = 39.12fF = H
F = GBH= 39.12
Number of stages, N = !"# !".!"
!"# !.! = 2.86 = 4 stages
f = F1/N = 2.77
The circuit is modified as shown below to get the required number of stages
Figure 21: Modified WR Driver
The gates were sized as follows:
1: !∗!!".!"
!.!" = 44.32 => Wp = 29.6μm, Wn= 14.8μm
2: !∗!!.!"
!.!" = 17.24 => Wp = 11.5μm, Wn= 5.74μm
3: !∗!".!"
!.!" = 6.7 => Wp =4.45μm, Wn= 2.23μm
4: !∗!.!
!.!" = 2.607 => Wp =1.73μm, Wn= 0.86μm
EE 7325 Page 19
21. SRAM Design and Layout
• Data Buffer
The data is given through two tristate inverters to the bitlines. The data buffer has to
be appropriately sized to run these tristate inverters. The correct sizing is shown
below. The layout and schematic are shown in figures 25 and 26.
Figure 24: Data Buffer Circuit
Cpoly = (2 fF/μm* 4.22μm) + (2 fF/μm* 0.48μm) = 9.4fF
Cwire = 0.2fF/μm * 2.38*40 = 19.04fF
CLoad = Cpoly + Cwire = !.!!!".!"
! = 14.22fF = H
F = GBH= 14.22
Number of stages, N = !"# !".!!
!"# !.! = 2.07 = 3 stages in order to invert.
f = F1/N = 2.42
3: !∗!".!!
!.!" = 5.87 => Wp =3.2μm, Wn= 1.96μm
2: !∗!.!"
!.!" = 2.42 => Wp = 1.61μm, Wn= 0.8μm
1: !∗!.!"
!.!" = 2.42 => Wp =0.66μm, Wn= 0.33μm
EE 7325 Page 21
22. SRAM Design and Layout
Figure 25: Data Driver Layout
Figure 26: Data Driver Schematic
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23. SRAM Design and Layout
• Transmission Gate
In our design, we have used transmission gates in order to select the columns.
The transmission gates are also sized for optimal speed. The schematic and layout of
the transmission gate are as shown in Figures 25 and 26 respectively.
Figure 27: Transmission Gate Layout
Figure 28: Transmission Gate Schematic
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24. SRAM Design and Layout
• Complete Schematic and Layout
Once all the peripheral circuits are designed, all of the units are then integrated to the
memory cell array. The complete SRAM schematic including precharge, clock buffer,
row decoders, column decoders, sense amplifier and the write circuit is as shown in
Figure 29. The corresponding layout of the design along with the rulers is given in
Figure 30.
Figure 29: Complete Schematic
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25. SRAM Design and Layout
Figure 30: Complete Layout
The total area of the design is 107.84 μm *114.85 μm = 12385.42 μm 2
Therefore, total area that accounts for one bit is given by,
Area /bit =12385.42 / 1028 = 12.048 μm 2
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26. SRAM Design and Layout
DRC and LVS Reports
The designed layout is checked in Cadence for design rule errors. There were no DRC errors
in the layout. A snapshot of the DRC report is shown in Figure 31. The functionality is then
tested by comparing the Layout versus Schematic (LVS). LVS matched and the report is
shown in Figure 32.
Figure 31: DRC Report for complete SRAM layout
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27. SRAM Design and Layout
Figure 32: LVS Report of the complete SRAM layout
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28. SRAM Design and Layout
Simulation and Results
The functionality of the SRAM is tested by writing a 10 bit data word 0110001010 into the
first row and first column of each super column of the design and then reading the written
value in the next clock cycle.
When the clk is low, all the bitlines are precharged to VDD. During evaluation, the Write
enable (WR) signal is activated. During this phase, the write operation take place and word
bits are written into the corresponding memory cell depending on the row and column
address.
Figure 33: SRAM Simulation Result
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29. SRAM Design and Layout
The worst case write time is found by reducing the width of the WR signal until the write
does not work properly. The smallest width of WR at which the data is written correctly is the
worst case write time. The read time delay is also measured by 50 - 50% delay between
addr_en signal and data bits being read. The simulated waveforms are as shown below.
Figure 34: Worst case time simulation
The operating frequency is calculated as shown below
Operating frequency = !
!∗!"#$% !"#$ !"#$ = !
!∗!"#!" = 613.5MHz
The noise margin is calculated by drawing the overlapped VTC (Butterfly diagram) for the
cross-coupled inverters that form the memory cell. The largest square that can fit in the eyes
of the butterfly diagram determines the noise margin. The butterfly diagram obtained is
shown below.
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30. SRAM Design and Layout
Figure 35: Noise Margin
Conclusion
Parameter Value
Aspect Ratio 1.065
Worst case write time 815ps
Worst case read time 714ps
Operating frequency 613.5MHz
Noise Margin 0.35V
The SRAM has comparatively low operating frequency but that is a trade-off for the low
area/bit that we have tried to achieve. The memory cell has good noise margin and good
control over read and write operations.
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