This document summarizes the design and analysis of SRAM and DRAM cells for low power consumption. It describes a 12-transistor SRAM cell built from a static latch and tri-state inverter that provides high speed. A conventional 6T SRAM cell is also discussed. DRAM cells provide higher density than SRAM but require periodic refresh to prevent data loss from capacitor leakage. Simulation results show the 12T SRAM cell and a 32x32 SRAM array function correctly in 130nm, 90nm, and 65nm technologies with good noise margins and stable output. The design flow uses Cadence tools with a 45nm process to achieve very low power consumption.
A Comparitive Analysis of Improved 6t Sram Cell With Different Sram CellIJERA Editor
High speed and low power consumption have been the primary issue to design Static Random Access Memory (SRAM), but we are facing new challenges with the scaling of technology. The stability and speed of SRAM are important issues to improve efficiency and performance of the system. Stability of the SRAM depends on the static noise margin (SNM) so the noise margin is also important parameter for the design of memory because the higher noise margin confirms the high speed of the SRAM cell. In this paper, the improved 6T SRAM cell shows maximum reduction in power consumption of 88%, maximum reduction in delay of 64% and maximum SNM of 17% increases compared with 7T SRAM cell.
IJERA (International journal of Engineering Research and Applications) is International online, ... peer reviewed journal. For more detail or submit your article, please visit www.ijera.com
Implementation of High Reliable 6T SRAM Cell Designiosrjce
Memory can be formed with the integration of large number of basic storing element called cells.
SRAM cell is one of the basic storing unit of volatile semiconductor memory that stores binary logic '1' or '0' bit.
Modified read and write circuits were proposed in this paper to address incorrect read and write operations in
conventional 6T SRAM cell design available in open literature. Design of a new highly reliable 6T SRAM cell
design is proposed with reliable read, write operations and negative bit line voltage (NBLV). Simulations are
carried out using MENTOR GRAPHICS
Design and Simulation Low power SRAM Circuitsijsrd.com
SRAMs), focusing on optimizing delay and power. As the scaling trends in the speed and power of SRAMs with size and technology and find that the SRAM delay scales as the logarithm of its size as long as the interconnect delay is negligible. Non-scaling of threshold mismatches with process scaling, causes the signal swings in the bitlines and data lines also not to scale, leading to an increase in the relative delay of an SRAM, across technology generations. Appropriate methods for reduction of power consumption were studied such as capacitance reduction, very low operating voltages, DC and AC current reduction and suppression of leakage currents to name a few.. Many of reviewed techniques are applicable to other applications such as ASICs, DSPs, etc. Battery and solar-cell operation requires an operating voltage environment in low voltage area. These conditions demand new design approaches and more sophisticated concepts to retain high device reliability. The proposed techniques (USRS and LPRS) are topology based and hence easier to implement.
A Comparitive Analysis of Improved 6t Sram Cell With Different Sram CellIJERA Editor
High speed and low power consumption have been the primary issue to design Static Random Access Memory (SRAM), but we are facing new challenges with the scaling of technology. The stability and speed of SRAM are important issues to improve efficiency and performance of the system. Stability of the SRAM depends on the static noise margin (SNM) so the noise margin is also important parameter for the design of memory because the higher noise margin confirms the high speed of the SRAM cell. In this paper, the improved 6T SRAM cell shows maximum reduction in power consumption of 88%, maximum reduction in delay of 64% and maximum SNM of 17% increases compared with 7T SRAM cell.
IJERA (International journal of Engineering Research and Applications) is International online, ... peer reviewed journal. For more detail or submit your article, please visit www.ijera.com
Implementation of High Reliable 6T SRAM Cell Designiosrjce
Memory can be formed with the integration of large number of basic storing element called cells.
SRAM cell is one of the basic storing unit of volatile semiconductor memory that stores binary logic '1' or '0' bit.
Modified read and write circuits were proposed in this paper to address incorrect read and write operations in
conventional 6T SRAM cell design available in open literature. Design of a new highly reliable 6T SRAM cell
design is proposed with reliable read, write operations and negative bit line voltage (NBLV). Simulations are
carried out using MENTOR GRAPHICS
Design and Simulation Low power SRAM Circuitsijsrd.com
SRAMs), focusing on optimizing delay and power. As the scaling trends in the speed and power of SRAMs with size and technology and find that the SRAM delay scales as the logarithm of its size as long as the interconnect delay is negligible. Non-scaling of threshold mismatches with process scaling, causes the signal swings in the bitlines and data lines also not to scale, leading to an increase in the relative delay of an SRAM, across technology generations. Appropriate methods for reduction of power consumption were studied such as capacitance reduction, very low operating voltages, DC and AC current reduction and suppression of leakage currents to name a few.. Many of reviewed techniques are applicable to other applications such as ASICs, DSPs, etc. Battery and solar-cell operation requires an operating voltage environment in low voltage area. These conditions demand new design approaches and more sophisticated concepts to retain high device reliability. The proposed techniques (USRS and LPRS) are topology based and hence easier to implement.
This paper presents a spin-transfer torque- magnetic
tunnel junction (STT-MTJ) based non-volatile 9-transistor
(9T) SRAM cell. The cell achieves low power dissipation due
to its series connected MTJ elements and read buffer which
offer stacking effect. The paper studies the impact of PVT
(process, voltage, and temperature) variations on the design
metric of the SRAM cell such as write delay and compares the
results with non-volatile 8T SRAM cell (NV8T). The proposed
design consumes lower leakage power and exhibits narrower
spread in write delay compared with NV8T.
Process Variation and Radiation-Immune Single Ended 6T SRAM CellIDES Editor
The leakage power can dominate the system power
dissipation and determine the battery life in battery-operated
applications with low duty cycles, such as the wireless sensors,
cellular phones, PDAs or pacemakers. Driven by the need of
ultra-low power applications, this paper presents single ended
6T SRAM (static random access memory) cell which is also
radiation hardened due to maximum use of PMOS
transistors. Due to process imperfection, starting from the 65
nm technology node, device scaling no longer delivers the
power gains. Since then the supply voltage has remained
almost constant and improvement in dynamic power has
stagnated, while the leakage currents have continued to
increase. Therefore, power reduction is the major area of
concern in today’s circuit with minimum-geometry devices
such as nanoscale memories. The proposed design in this
paper saves dynamic write power more than 50%. It also
offers 29.7% improvement in TWA (write access time), 38.5%
improvement in WPWR (write power), 69.6% improvement in
WEDP (write energy delay product), 26.3% improvement in
WEDP variability, 5.6% improvement in RPWR (read power) at
the cost of 22.5% penalty in SNM (static noise margin) at
nominal voltage of VDD = 1 V. The tighter spread in write EDP
implies its robustness against process and temperature
variations. Monte Carlo simulation measurements validate
the design at 32 nm technology node.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
Built-in Self Repair for SRAM Array using RedundancyIDES Editor
In this paper, a built-in self repair technique for
word-oriented two-port SRAM memories is presented. The
technique is implemented by additional hardware design
instead of traditional software diagnostic procedures and the
computation time is minimized. A built-in self-test (BIST) is
used to detect the faulty locations which are isolated
immediately after detection. Therefore, the redirection process
can be executed as soon as possible. Spare rows are used to
replace the faulty rows. The hardware overhead of the
automatic fault isolation design depends on size of memory
system. All the repairs using BISR circuit are done at power
on.
The International Journal of Engineering and Science (The IJES)theijes
The International Journal of Engineering & Science is aimed at providing a platform for researchers, engineers, scientists, or educators to publish their original research results, to exchange new ideas, to disseminate information in innovative designs, engineering experiences and technological skills. It is also the Journal's objective to promote engineering and technology education. All papers submitted to the Journal will be blind peer-reviewed. Only original articles will be published.
A Single-Ended With Dynamic Feedback Control 8T Subthreshold SRAM Cell Ieee Xpert
A Single-Ended With Dynamic Feedback Control
8T Subthreshold SRAM Cell
A Single-Ended With Dynamic Feedback Control
8T Subthreshold SRAM Cell
A Single-Ended With Dynamic Feedback Control
8T Subthreshold SRAM Cell
A Single-Ended With Dynamic Feedback Control
8T Subthreshold SRAM Cell
A Single-Ended With Dynamic Feedback Control
8T Subthreshold SRAM Cell
International Journal of Engineering Research and Development (IJERD)IJERD Editor
journal publishing, how to publish research paper, Call For research paper, international journal, publishing a paper, IJERD, journal of science and technology, how to get a research paper published, publishing a paper, publishing of journal, publishing of research paper, reserach and review articles, IJERD Journal, How to publish your research paper, publish research paper, open access engineering journal, Engineering journal, Mathemetics journal, Physics journal, Chemistry journal, Computer Engineering, Computer Science journal, how to submit your paper, peer reviw journal, indexed journal, reserach and review articles, engineering journal, www.ijerd.com, research journals,
yahoo journals, bing journals, International Journal of Engineering Research and Development, google journals, hard copy of journal
Research Inventy : International Journal of Engineering and Scienceresearchinventy
Research Inventy : International Journal of Engineering and Science is published by the group of young academic and industrial researchers with 12 Issues per year. It is an online as well as print version open access journal that provides rapid publication (monthly) of articles in all areas of the subject such as: civil, mechanical, chemical, electronic and computer engineering as well as production and information technology. The Journal welcomes the submission of manuscripts that meet the general criteria of significance and scientific excellence. Papers will be published by rapid process within 20 days after acceptance and peer review process takes only 7 days. All articles published in Research Inventy will be peer-reviewed.
Time and Low Power Operation Using Embedded Dram to Gain Cell Data RetentionIJMTST Journal
Logic compatible gain cell (GC)-embedded DRAM (eDRAM) arrays are considered an alternative to SRAM because of their small size, non rationed operation, low static leakage, and two port functionality. But traditional GC-eDRAM implementations require boosted control signals in order to write full voltage levels to the cell to reduce the refresh rate and shorten access times. The boosted levels require an extra power supply or on-chip charge pumps, as well as nontrivial level shifting and toleration of high voltage levels. In this paper, we present a novel, logic compatible, 3T GC-eDRAM bit cell that operates with a single-supply voltage and provides superior write capability to the conventional GC structures. The proposed circuit is demonstrated in 0.25μm CMOS process targeted at low power, energy efficient application.
This paper presents a spin-transfer torque- magnetic
tunnel junction (STT-MTJ) based non-volatile 9-transistor
(9T) SRAM cell. The cell achieves low power dissipation due
to its series connected MTJ elements and read buffer which
offer stacking effect. The paper studies the impact of PVT
(process, voltage, and temperature) variations on the design
metric of the SRAM cell such as write delay and compares the
results with non-volatile 8T SRAM cell (NV8T). The proposed
design consumes lower leakage power and exhibits narrower
spread in write delay compared with NV8T.
Process Variation and Radiation-Immune Single Ended 6T SRAM CellIDES Editor
The leakage power can dominate the system power
dissipation and determine the battery life in battery-operated
applications with low duty cycles, such as the wireless sensors,
cellular phones, PDAs or pacemakers. Driven by the need of
ultra-low power applications, this paper presents single ended
6T SRAM (static random access memory) cell which is also
radiation hardened due to maximum use of PMOS
transistors. Due to process imperfection, starting from the 65
nm technology node, device scaling no longer delivers the
power gains. Since then the supply voltage has remained
almost constant and improvement in dynamic power has
stagnated, while the leakage currents have continued to
increase. Therefore, power reduction is the major area of
concern in today’s circuit with minimum-geometry devices
such as nanoscale memories. The proposed design in this
paper saves dynamic write power more than 50%. It also
offers 29.7% improvement in TWA (write access time), 38.5%
improvement in WPWR (write power), 69.6% improvement in
WEDP (write energy delay product), 26.3% improvement in
WEDP variability, 5.6% improvement in RPWR (read power) at
the cost of 22.5% penalty in SNM (static noise margin) at
nominal voltage of VDD = 1 V. The tighter spread in write EDP
implies its robustness against process and temperature
variations. Monte Carlo simulation measurements validate
the design at 32 nm technology node.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
Built-in Self Repair for SRAM Array using RedundancyIDES Editor
In this paper, a built-in self repair technique for
word-oriented two-port SRAM memories is presented. The
technique is implemented by additional hardware design
instead of traditional software diagnostic procedures and the
computation time is minimized. A built-in self-test (BIST) is
used to detect the faulty locations which are isolated
immediately after detection. Therefore, the redirection process
can be executed as soon as possible. Spare rows are used to
replace the faulty rows. The hardware overhead of the
automatic fault isolation design depends on size of memory
system. All the repairs using BISR circuit are done at power
on.
The International Journal of Engineering and Science (The IJES)theijes
The International Journal of Engineering & Science is aimed at providing a platform for researchers, engineers, scientists, or educators to publish their original research results, to exchange new ideas, to disseminate information in innovative designs, engineering experiences and technological skills. It is also the Journal's objective to promote engineering and technology education. All papers submitted to the Journal will be blind peer-reviewed. Only original articles will be published.
A Single-Ended With Dynamic Feedback Control 8T Subthreshold SRAM Cell Ieee Xpert
A Single-Ended With Dynamic Feedback Control
8T Subthreshold SRAM Cell
A Single-Ended With Dynamic Feedback Control
8T Subthreshold SRAM Cell
A Single-Ended With Dynamic Feedback Control
8T Subthreshold SRAM Cell
A Single-Ended With Dynamic Feedback Control
8T Subthreshold SRAM Cell
A Single-Ended With Dynamic Feedback Control
8T Subthreshold SRAM Cell
International Journal of Engineering Research and Development (IJERD)IJERD Editor
journal publishing, how to publish research paper, Call For research paper, international journal, publishing a paper, IJERD, journal of science and technology, how to get a research paper published, publishing a paper, publishing of journal, publishing of research paper, reserach and review articles, IJERD Journal, How to publish your research paper, publish research paper, open access engineering journal, Engineering journal, Mathemetics journal, Physics journal, Chemistry journal, Computer Engineering, Computer Science journal, how to submit your paper, peer reviw journal, indexed journal, reserach and review articles, engineering journal, www.ijerd.com, research journals,
yahoo journals, bing journals, International Journal of Engineering Research and Development, google journals, hard copy of journal
Research Inventy : International Journal of Engineering and Scienceresearchinventy
Research Inventy : International Journal of Engineering and Science is published by the group of young academic and industrial researchers with 12 Issues per year. It is an online as well as print version open access journal that provides rapid publication (monthly) of articles in all areas of the subject such as: civil, mechanical, chemical, electronic and computer engineering as well as production and information technology. The Journal welcomes the submission of manuscripts that meet the general criteria of significance and scientific excellence. Papers will be published by rapid process within 20 days after acceptance and peer review process takes only 7 days. All articles published in Research Inventy will be peer-reviewed.
Time and Low Power Operation Using Embedded Dram to Gain Cell Data RetentionIJMTST Journal
Logic compatible gain cell (GC)-embedded DRAM (eDRAM) arrays are considered an alternative to SRAM because of their small size, non rationed operation, low static leakage, and two port functionality. But traditional GC-eDRAM implementations require boosted control signals in order to write full voltage levels to the cell to reduce the refresh rate and shorten access times. The boosted levels require an extra power supply or on-chip charge pumps, as well as nontrivial level shifting and toleration of high voltage levels. In this paper, we present a novel, logic compatible, 3T GC-eDRAM bit cell that operates with a single-supply voltage and provides superior write capability to the conventional GC structures. The proposed circuit is demonstrated in 0.25μm CMOS process targeted at low power, energy efficient application.
250nm Technology Based Low Power SRAM Memoryiosrjce
High integration density, low power and fastperformance are all critical parameters in designing of
memory blocks. Static Random Access Memories (SRAMs)’s focusing on optimizing dynamic power concept of
virtual source transistors is used for removing direct connection between VDD and GND.
Also stacking effect can be reduced by switching off the stacktransistors when the memory is ideal and the
leakage current using SVL techniques This paper discusses the evolution of 9t SRAM circuits in terms of low
power consumption, The whole circuit verification is done on the Tanner tool, Schematic of the
SRAM cell is designed on the S-Edit and net list simulation done by using T-spice and waveforms are analyzed
through the W-edit
DESIGN AND IMPLEMENTATION OF 4T, 3T AND 3T1D DRAM CELL DESIGN ON 32 NM TECHNO...VLSICS Design
In this paper average power consumption, write access time, read access time and retention time of dram cell designs have been analyzed for the nano-meter scale memories. Many modern day processors use dram cell for on chip data and program memory storage. The major power in dram is the off state leakage current. Improving on the power efficiency of a dram cell is critical for the improvement in average power consumption of the overall system. 3T dram cell, 4T dram and 3T1D DRAM cells are designed with the schematic design technique and their average power consumption are compared using TANNER EDA tool .average power consumption, write access time, read access time and retention time of 4T, 3T dram and 3T1D DRAM cell are simulated and compared on 32 nm technology.
PERFORMANCE EVALUATION OF DIFFERENT SRAM CELL STRUCTURES AT DIFFERENT TECHNOL...VLSICS Design
In recent years the demand for low power devices has been increases tremendously. To solve the power dissipation problem, many researchers have proposed different ideas from the device level to the architectural level and above. However, there is no universal way to avoid tradeoffs between power, delay and area, thus designers are required to choose appropriate techniques that satisfy application and product needs. The demand for static random-access memory (SRAM) is increasing with large use of SRAM in System On-Chip and high-performance VLSI circuits. This paper represents the simulation of different SRAM cells and their comparative analysis on different parameters such as Power Supply Voltage, area efficiency etc to enhance the performance. All the simulations have been carried out on BSIM 3V3 90nm, 45nm and 32 technology at Tanner EDA tool.
Energy optimization of 6T SRAM cell using low-voltage and high-performance in...IJECEIAES
The performance of the cell deteriorates, when static random access memory (SRAM) cell is operated below 1V supply voltage with continuous scale down of the complementary metal oxide semiconductor (CMOS) technology. The conventional 6T, 8T-SRAM cells suffer writeability and read static noise margins (SNM) at low-voltages leads to degradation of cell stability. To improve the cell stability and reduce the dynamic power dissipation at low- voltages of the SRAM cell, we proposed four SRAM cells based on inverter structures with less energy consumption using voltage divider bias current sink/source inverter and NOR/NAND gate using a pseudo-nMOS inverter. The design and implementation of SRAM cell using proposed inverter structures are compared with standard 6T, 8T and ST-11T SRAM cells for different supply voltages at 22-nm CMOS technology exhibit better performance of the cell. The read/write static noise margin of the cell significantly increases due to voltage divider bias network built with larger cell-ratio during read path. The load capacitance of the cell is reduced with minimized switching transitions of the devices during high-to-low and low- to-high of the pull-up and pull-down networks from VDD to ground leads to on an average 54% of dynamic power consumption. When compared with the existing ones, the read/write power of the proposed cells is reduced to 30%. The static power gets reduced by 24% due to stacking of transistors takes place in the proposed SRAM cells as compare to existing ones. The layout of the proposed cells is drawn at a 45-nm technology, and occupies an area of 1.5 times greater and 1.8 times greater as compared with 6T-SRAM cell.
Design and implementation of 4 t, 3t and 3t1d dram cell design on 32 nm techn...VLSICS Design
In this paper average power consumption, write access time, read access time and retention time of dram
cell designs have been analyzed for the nano-meter scale memories. Many modern day processors use
dram cell for on chip data and program memory storage. The major power in dram is the off state leakage
current. Improving on the power efficiency of a dram cell is critical for the improvement in average power
consumption of the overall system. 3T dram cell, 4T dram and 3T1D DRAM cells are designed with the
schematic design technique and their average power consumption are compared using TANNER EDA tool
.average power consumption, write access time, read access time and retention time of 4T, 3T dram and
3T1D DRAM cell are simulated and compared on 32 nm technology
An Innovative Design solution for minimizing Power Dissipation in SRAM CellIJERA Editor
Over the years, the development of the logic on the chip is increased. To sustain and drive the logic flow, various techniques and SRAM cell designs have been implemented. The basic element of memory design is 6T SRAM cell. But while dealing with this 6T SRAM cell there are some issues with the parametric analysis on the performance of the cell. This paper presents an innovative design idea of new 8T RAM cell with various parametric analysis. The proposed cell is compared with the standard cell in terms of different parameters such as area, speed and power consumption along with the loading effect with the increase in load capacitance on the cell. The structure is designed with CMOS 45 nm Technology with BSIM 4 MOS modelling using Microwind 3.5 software tool
IJERA (International journal of Engineering Research and Applications) is International online, ... peer reviewed journal. For more detail or submit your article, please visit www.ijera.com
IMPLEMENTATION OF LOW POWER ADIABATIC SRAMVLSICS Design
In the featuring VLSI era, compact electronic devices are popular. The reliability and durability of such compact devices relies on low power utilization. The purpose of this project was to implement a low power adiabatic Static Random Access Memory (SRAM), with the following objectives - To reduce the power waste by means of stepwise charging using tank capacitors which is an adiabatic way of generating power clock. This method is capable of recuperating the electrical energy back to the source. Further to examine the Static Noise Margin (SNM) – a parameter which gives detailed information about the cell stability – in contrast with conventional 6T, 7T and 8T topologies of SRAM under 180 nm technology. Finally, SNM variations with respect to process parameters are also discussed. All the implementations and analysis were made using CADENCE tool and MATLAB tool.
Similar to Using CMOS Sub-Micron Technology VLSI Implementation of Low Power, High Speed SRAM Cell and DRAM Cell (20)
Explore the innovative world of trenchless pipe repair with our comprehensive guide, "The Benefits and Techniques of Trenchless Pipe Repair." This document delves into the modern methods of repairing underground pipes without the need for extensive excavation, highlighting the numerous advantages and the latest techniques used in the industry.
Learn about the cost savings, reduced environmental impact, and minimal disruption associated with trenchless technology. Discover detailed explanations of popular techniques such as pipe bursting, cured-in-place pipe (CIPP) lining, and directional drilling. Understand how these methods can be applied to various types of infrastructure, from residential plumbing to large-scale municipal systems.
Ideal for homeowners, contractors, engineers, and anyone interested in modern plumbing solutions, this guide provides valuable insights into why trenchless pipe repair is becoming the preferred choice for pipe rehabilitation. Stay informed about the latest advancements and best practices in the field.
Hierarchical Digital Twin of a Naval Power SystemKerry Sado
A hierarchical digital twin of a Naval DC power system has been developed and experimentally verified. Similar to other state-of-the-art digital twins, this technology creates a digital replica of the physical system executed in real-time or faster, which can modify hardware controls. However, its advantage stems from distributing computational efforts by utilizing a hierarchical structure composed of lower-level digital twin blocks and a higher-level system digital twin. Each digital twin block is associated with a physical subsystem of the hardware and communicates with a singular system digital twin, which creates a system-level response. By extracting information from each level of the hierarchy, power system controls of the hardware were reconfigured autonomously. This hierarchical digital twin development offers several advantages over other digital twins, particularly in the field of naval power systems. The hierarchical structure allows for greater computational efficiency and scalability while the ability to autonomously reconfigure hardware controls offers increased flexibility and responsiveness. The hierarchical decomposition and models utilized were well aligned with the physical twin, as indicated by the maximum deviations between the developed digital twin hierarchy and the hardware.
About
Indigenized remote control interface card suitable for MAFI system CCR equipment. Compatible for IDM8000 CCR. Backplane mounted serial and TCP/Ethernet communication module for CCR remote access. IDM 8000 CCR remote control on serial and TCP protocol.
• Remote control: Parallel or serial interface.
• Compatible with MAFI CCR system.
• Compatible with IDM8000 CCR.
• Compatible with Backplane mount serial communication.
• Compatible with commercial and Defence aviation CCR system.
• Remote control system for accessing CCR and allied system over serial or TCP.
• Indigenized local Support/presence in India.
• Easy in configuration using DIP switches.
Technical Specifications
Indigenized remote control interface card suitable for MAFI system CCR equipment. Compatible for IDM8000 CCR. Backplane mounted serial and TCP/Ethernet communication module for CCR remote access. IDM 8000 CCR remote control on serial and TCP protocol.
Key Features
Indigenized remote control interface card suitable for MAFI system CCR equipment. Compatible for IDM8000 CCR. Backplane mounted serial and TCP/Ethernet communication module for CCR remote access. IDM 8000 CCR remote control on serial and TCP protocol.
• Remote control: Parallel or serial interface
• Compatible with MAFI CCR system
• Copatiable with IDM8000 CCR
• Compatible with Backplane mount serial communication.
• Compatible with commercial and Defence aviation CCR system.
• Remote control system for accessing CCR and allied system over serial or TCP.
• Indigenized local Support/presence in India.
Application
• Remote control: Parallel or serial interface.
• Compatible with MAFI CCR system.
• Compatible with IDM8000 CCR.
• Compatible with Backplane mount serial communication.
• Compatible with commercial and Defence aviation CCR system.
• Remote control system for accessing CCR and allied system over serial or TCP.
• Indigenized local Support/presence in India.
• Easy in configuration using DIP switches.
Saudi Arabia stands as a titan in the global energy landscape, renowned for its abundant oil and gas resources. It's the largest exporter of petroleum and holds some of the world's most significant reserves. Let's delve into the top 10 oil and gas projects shaping Saudi Arabia's energy future in 2024.
CFD Simulation of By-pass Flow in a HRSG module by R&R Consult.pptxR&R Consult
CFD analysis is incredibly effective at solving mysteries and improving the performance of complex systems!
Here's a great example: At a large natural gas-fired power plant, where they use waste heat to generate steam and energy, they were puzzled that their boiler wasn't producing as much steam as expected.
R&R and Tetra Engineering Group Inc. were asked to solve the issue with reduced steam production.
An inspection had shown that a significant amount of hot flue gas was bypassing the boiler tubes, where the heat was supposed to be transferred.
R&R Consult conducted a CFD analysis, which revealed that 6.3% of the flue gas was bypassing the boiler tubes without transferring heat. The analysis also showed that the flue gas was instead being directed along the sides of the boiler and between the modules that were supposed to capture the heat. This was the cause of the reduced performance.
Based on our results, Tetra Engineering installed covering plates to reduce the bypass flow. This improved the boiler's performance and increased electricity production.
It is always satisfying when we can help solve complex challenges like this. Do your systems also need a check-up or optimization? Give us a call!
Work done in cooperation with James Malloy and David Moelling from Tetra Engineering.
More examples of our work https://www.r-r-consult.dk/en/cases-en/
Final project report on grocery store management system..pdfKamal Acharya
In today’s fast-changing business environment, it’s extremely important to be able to respond to client needs in the most effective and timely manner. If your customers wish to see your business online and have instant access to your products or services.
Online Grocery Store is an e-commerce website, which retails various grocery products. This project allows viewing various products available enables registered users to purchase desired products instantly using Paytm, UPI payment processor (Instant Pay) and also can place order by using Cash on Delivery (Pay Later) option. This project provides an easy access to Administrators and Managers to view orders placed using Pay Later and Instant Pay options.
In order to develop an e-commerce website, a number of Technologies must be studied and understood. These include multi-tiered architecture, server and client-side scripting techniques, implementation technologies, programming language (such as PHP, HTML, CSS, JavaScript) and MySQL relational databases. This is a project with the objective to develop a basic website where a consumer is provided with a shopping cart website and also to know about the technologies used to develop such a website.
This document will discuss each of the underlying technologies to create and implement an e- commerce website.
Runway Orientation Based on the Wind Rose Diagram.pptx
Using CMOS Sub-Micron Technology VLSI Implementation of Low Power, High Speed SRAM Cell and DRAM Cell
1. International Journal of VLSI design & Communication Systems (VLSICS) Vol.2, No.4, December 2011
DOI : 10.5121/vlsic.2011.2412 143
USING CMOS SUB-MICRON TECHNOLOGY VLSI
IMPLEMENTATION OF LOW POWER, HIGH SPEED
SRAM CELL AND DRAM CELL
Mr.Viplav A. Soliv1
Dr. Ajay A. Gurjar2
1
Department of Electronics and Telecommunication
Sipna’s college of Engineering & Technology, Amravati.
viplove.soliv@rediffmail.com
2
Department of Electronics and Telecommunication
Sipna’s college of Engineering & Technology, Amravati.
prof_gurjar1928@rediffmail.com
ABSTRACT
Abstract This paper deals with the design and analysis of high speed Static Random Access Memory
(SRAM) cell and Dynamic Random Access Memory (DRAM) cell to develop low power consumption.
SRAM and DRAM cells have been the predominant technologies used to implement memory cells in
computer systems, each one having its advantages and shortcomings. SRAM cells are faster and require no
refresh since reads are not destructive. In contrast, DRAM cells provide higher density and minimal
leakage energy. Here we use 12-transistor SRAM cell built from a simple static latch and tri state inverter.
The reading action itself refreshes the content of memory. The SRAM access path is split into two portions:
from address input to word line rise (the row decoder) and from word line rise to data output (the read
data path). The decoder which constitutes the path from address input to the word line rise is implemented
as a binary structure by implementing a multi-stage path. The key to low power operation in the SRAM
data path is to reduce the signal swings on the high capacitance nodes like the bit lines and the data lines.
KEYWORDS
Keywords SRAM, DRAM, Low power, 12-T SRAM cell
1. INTRODUCTION
Static Random Access Memories (SRAM) and dynamic RAM (DRAM) have been the
predominant technologies used to implement memory cells in computer systems. SRAM cells,
typically implemented with six transistors (6T cells) have been usually designed for speed, while
DRAM cells, implemented with only one capacitor and the corresponding pass transistor (1T1C
cells) have been generally designed for density. Because of this reason, the former technology has
been used to implement cache memories and the latter for main memory storage. Cache memories
occupy an important percentage of the overall die area. A major drawback of these memories is
the amount of dissipated static energy or leakage, which is proportional to the number of
transistors used to implement these structures. However, although leakage currents are reduced,
they still persist. In contrast, dynamic 1T1C cells avoid this drawback by design, since the power
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supply is removed after accessing the memory cells. Typically, 1T1C DRAM cells were too slow
to implement processor caches. However, technology advances have recently allowed embedding
DRAM cells using CMOS technology. Despite technology advances, an important drawback of
DRAM cells is that reads are destructive, that is, the capacitor loses its state when it is read.
Table1 summarizes the main design characteristics of the discussed cells. In addition, capacitors
lose their charge a long time, thus they must be recharged or refreshed. To refresh memory cells,
extra refresh logic is required which in turn results not only in additional power consumption but
also in availability overhead.
Table1: Memory Cell Characteristics
1.1 An Introduction to SRAM
The fundamental building block of a static RAM is the SRAM memory cell. The cell is activated
by raising the word line and is read or written through the bit line. Fig (1) shows a 12-transistor
SRAM cell built from a simple static latch and tri-state inverter. The cell has a single bit line.
True and complementary read and write signals are used in place of a single word line. A
representative layout in Fig (3) has an area of 46 x 75 X. The power and ground lines can be
shared between mirrored adjacent cells, but the area is still limited by the wires and is undesirably
large. However, the cell is easy to design because all nodes swing rail-to-rail and it is fast when
used in small RAMs and register files. Fig (2) shows a 6-transistor (6T) SRAM commonly used
in practice. Such a cell uses a single word line and both true and complementary bid lines. The
complementary bit- line is often called bit or bit. The cell contains a pair of cross-coupled
inverters and an access transistor for each bit line. True and complementary versions of the data
are stored on the cross-coupled inverters. If the data is disturbed slightly, positive feedback
around the loop will restore it to VDD or GND. The word line is asserted to read or write the cell.
Fig 1: 12-transistor SRAM cell
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Two types of SRAM cells will be considered in this paper. (i) Conventional Twelve-transistor
(12T) SRAM cell, as shown in Figure 1. (ii) Load less six-transistor (6T) SRAM Cell, as shown
in Figure 2. They will be designed and analyzed in various configurations with respect to
functionality, power dissipation, area occupancy, stability and access time. True and
complementary versions of the data are stored on the cross-coupled inverters.
Fig 2: Conventional 6T SRAM Cell
Fig 3: Representative layout of 46 x 75 X
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Fig 4: Schematic of SRAM cell
1.2 An Introduction to DRAM
Dynamic random access memory (DRAM) integrated circuits (ICs) have existed for more than
twenty-five years. DRAMs evolved from the earliest 1-kilobit (Kb) generation to the recent 1-
gigabit (GB) generation through advances in both semiconductor process and circuit design
technology. Tremendous advances in process technology have dramatically reduced feature size,
permitting ever higher levels of integration. These increases in integration have been
accompanied by major improvements in component yield to ensure that overall process solutions
remain cost-effective and competitive. Technology improvements, however, are not limited to
semiconductor processing. Many of the advances in process technology have been accompanied
or enabled by advances in circuit design technology. In most cases, advances in one have enabled
advances in the other. Dynamic RAMs (DRAMs) store their contents as charge on a capacitor
rather than in a feedback loop. Thus, the basic cell is substantially smaller than SRAM, but the
cell must be periodically read and refreshed so that its contents do not leak away. Commercial
DRAMs are built in specialized processes optimized for dense capacitor structures. They offer an
order of magnitude greater density (bits/cm2) than high-performance SRAM built in a standard
logic process, but they also have much higher latency. DRAM circuit design is a very specialized
art. This section provides an overview of the general technique.
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A 1-transistor (IT) dynamic RAM cell consists of a transistor and a capacitor, as shown in Figure
(a). Like SRAM, the cell is accessed by asserting the word line to connect the capacitor to the bit
line. On a read, the bit line is first pre charged to VDD/2. When the word line rises, the capacitor
shares its charge with the bit line, causing a voltage change A V that can be sensed, as shown in
Figure (b).
The read disturbs the cell contents at x, so the cell must be rewritten after each read. On a write,
the bit line is driven high or low and the voltage is forced onto the capacitor. Some DRAMs
drive the word line to VDDP = VDD + Vt to avoid a degraded level when writing a '1.' The
DRAM capacitor must be as physically small as possible to achieve good density. However, the
bit line is contacted to many DRAM cells and has a relatively large capacitance C bit. Therefore,
the cell capacitance is typically much smaller than the bit line capacitance.
2. MEMORY ARCHITECTURE
The preferred organization for Random access memories is shown in Fig 5. This organization is
random-access architecture which is an Asynchronous design. The name is derived from the fact
that memory locations (addresses) can be accessed in random order at a fixed rate, independent of
physical location, for reading or writing. The storage array, or core, is made up of simple cell
circuits arranged to share connections in horizontal rows and vertical columns. The horizontal
lines, which are driven only from outside the storage array, are called word lines, while the
vertical lines, along which data flow into and out of cells, are called bit lines.
A cell is accessed for reading or writing by selecting its row and column. Each Cell can store 0 or
1. Memories may simultaneously select 4, 8, 16, 32, or 64columns in one row depending on the
application. The row and column (or groups of columns) to be selected are determined by
decoding binary address information. In this design, the number of rows and columns, both are
equal to 64 for 4Mb memory cut. Using two such memory cuts, a 8Mb SRAM memory is
designed.
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Fig 5: SRAM Memory Architecture
3. SENSE AMPLIFIER
The sense amplifiers have to amplify the data which is present on the bit lines during the read
operation. The memory cells are small in size, and hence cannot the discharge the bit lines fast
enough. Also, the bit lines continue to slew till a large differential voltage is formed between
them. This causes significant power dissipation since the bit lines have large capacitances.
Fig 6: Schematic of sense amplifier
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Hence, by limiting the word line pulse width we can control the amount of charge pulled down by
the bit lines and hence limit power dissipation. The schematic and symbol are as shown below. It
consists of two cross coupled gain stages which are enabled by the sense clock signal. The cross
coupled stage ensures a full amplification of the input signal. This type of amplifier consumes
least amount of power, however they can potentially be slower since some timing margin is
needed for the generation of the sense clock signal. If the sense amplifiers enabled before
sufficient differential voltage is formed, it could lead to a wrong output. Thus, the timing of the
sense clock signal needs to be such that the sense amplifier can operate over various process
corners and temperature ranges.
In this sense amplifier Bit lines have many cells attached. If we take example of that
Ex: 32-kbit SRAM has 256 rows x 128 cols. On each bit line 128 cells are present.
Sense amplifiers are triggered on small voltage swing (reduce ∆V).Even with shared diffusion
contacts, 64C of diffusion capacitance are there. Discharged slowly through small transistors.
4. SIMULATION ENVIRONMENT AND RESULTS
The following configuration of SRAM arrays were designed and analyzed using the conventional
6T SRAM Cell: (a) 1*1 (b) 16*16 (c) 32*32. The various configurations were simulated using
HSPICE using the Nominal Predictive Technology Model (PTM) in 130nm, 90nm and 65nm
CMOS technologies. The functionality of 1*1 6T SRAM cell is shown in Figure. 7 The For 1K-
bit (32*32) configuration along with the relevant input control signals, only the signals for three
input data bits (0th, 16th and 31st), three output data bits (0th,16th and 31st), and the
corresponding storage nodes of the appropriate cell is presented.
Cadence simulation of transient analysis and DC analysis gave good results. The results are
shown in the timing diagram. The noise margins are very good and the output is stable.
(a)
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(b
(c)
Fig 8: Timing Diagram
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5. DESIGN FLOW
Cadence design Systems is electronic design automation software and engineering Services
Company that offers various types of design and verification tasks that include:
Virtuoso Platform - Tools for designing full-custom integrated circuits, includes schematic entry,
behavioral modeling (Verilog-AMS), circuit simulation, full custom layout, physical verification,
extraction and back-annotation.
Encounter Platform - Tools for creation of digital integrated circuits. This includes floor planning,
synthesis, test, and place and route.
Incisive Platform - Tools for simulation and functional verification of RTL including Verilog,
VHDL and System C based models. Includes formal verification, formal equivalence checking,
hardware acceleration, and emulation.
The proposed work is done in Virtuoso platform using gpdk45 nm technology. The flow of
design is as shown below.
Fig 9: Design Flow
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6. CONCLUSION
The New Load less 6T-SRAM cell is designed and analyzed in deep submicron (130nm, 90nm
and 65nm) CMOS technologies, which establish the technology independence of the New Load
less 4T SRAM cell and its consistent performance with respect to Conventional 6T SRAM cell in
deep sub-micron regime. The New Load less 6T SRAM array consumes low power with low
area. The most significant feature of this new load less 4T SRAM Cell is that there is no need to
modify any of the fabrication process. Thus it can be used for on-chip caches in embedded
microprocessors, high density SRAMs embedded in any logic devices, as well as for stand-alone
SRAM applications.
This paper presents the design of SRAM array in 45 nm having very low power consumption.
The low power design of SRAM is investigated and 6T SRAM architecture is chosen for memory
bit cell and an array is designed with that bit cell. Transient and parametric analyses were carried
out in the simulation process and the power consumption is estimated. As stated earlier, the power
consumption can further be reduced by partitioning the array and by using DWL scheme.
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Authors
Mr. Viplav A. Soliv is currently working as a lecturer in Electronics and
Telecommunication Engineering Department, Sipna College of Engineering, Amravati
(India) since 2010. He is also persuing his M.E. in Digital Electronics from the same
institute. His areas of interest are Digital System Design, VLSI Design.
viplove.soliv@rediffmail.com
Dr. Ajay A. Gurjar is currently working as a Professor in Electronics and
Telecommunication Engineering Department, Sipna College of Engineering; Amravati
(India).He also completed his Ph.D in signal processing. His areas of interest are Digital
System Design, VLSI Design, Image Processing, and Signal processing.
prof_gurjar1928@rediffmail.com