Downloaded 11 times
Uploaded bySirat Mahmood
Vlsi circuit design
The document provides an overview of VLSI (Very Large Scale Integration) circuit design and associated technologies including various types of integrated circuits, such as processors, memory chips, and embedded systems. It discusses Moore's Law and its historical significance in predicting the growth of transistor density and performance over time, alongside a brief history of significant advancements in transistor technology. Additionally, it touches upon key figures in semiconductor history, including Julius Edgar Lilienfeld and the development of the first transistors and integrated circuits.
In this document
Powered by AI
Introduction to VLSI Circuit Design, focusing on Very Large Scale Integration.
Overview of various IC products including processors, memory chips, analog devices, programmable devices, and embedded systems.
Definition of VLSI - Very Large Scale Integration and explanation of different integration scales from SSI to ULSI.
Achievements in early computing, highlighting Charles Babbage's Difference Engine and ENIAC as significant milestones.
Different types of memory configurations like Dual port RAM, FIFO, and ASIC components.
Introduction to the Pentium microprocessor, a significant development in VLSI technology.
Presentation of Moore's Law stating the doubling of transistor density and performance every 18-24 months, and discussing its implications and limitations. Details on IC scales from SSI to SLSI and an overview of the International Technology Roadmap for Semiconductors comparing manufacturing processes.
Biographical details of Julius Edgar Lilienfeld, a pioneer in transistor development and his contributions to the field.
Timeline of key events in transistor history, from its invention by Lilienfeld to the development of the first IC devices.
Introduction to MOSFET technology and detailed structures of CMOS chip design including multiple metal layers.
More Related Content
Similar to Vlsi circuit design
Vlsi circuit design
- 1.
- 2. IC Products Processors –CPU, DSP, Controllers Memory chips – RAM, ROM, EEPROM Analog – Mobile communication, audio/video processing Programmable – PLA, FPGA Embedded systems – Used in cars, factories – Network cards System-on-chip (SoC) Images: amazon.com
- 3. VLSI:Very Large ScaleIntegration Integration: Integrated Circuits – multiple devices on one substrate How large is Very Large? SSI (small scale integration) – Transistors<10 MSI (Medium scale integration) – 10<Transistors<100 LSI (Large scale integration) – 100<Transistors<1,000 VLSI (Very large scale integration) – 1,000<Transistors<10,000 ULSI/SLSI (Super Large Scale Integration) – 10,000<Transistors
- 4. The First Computer TheBabbage Difference Engine (1832) 25,000 parts cost: £17,470
- 5. ENIAC - Thefirst electronic computer (1946)
- 6. Dual port RAM Fullcustom Standard cell ASIC with mixture of full custom,RAM and standard cells FIFO Single port RAM
- 7.
- 8. 8 VLSI Trends: Moore’sLaw In 1965, Gordon Moore predicted that transistors would continue to shrink, allowing: – Doubled transistor density every 18-24 months – Doubled performance every 18-24 months History has proven Moore right But, is the end is in sight? – Physical limitations – Economic limitations Gordon Moore Intel Co-Founder and Chairmain Emeritus Image source: Intel Corporation www.intel.com
- 9. Moore’s Law (cont) Intel co-founder Gorden Moore notice in 1964 Number of transistors doubled every 12 months while price unchanged Slowed down in the 1980s to every 18 months Amazingly still correct, likely to keep until 2010.
- 10. Moore’s Law, Intel’sVersion Transistors 10K 100K 1M 10M 1975 1980 1985 1990 1995 4040 8080 8086 80286 80386 80486 Pentium Pentium III 1K 2000
- 11. IC Scales Integration levelAbbreviation Number of devices on a chip Small Scale Integration SSI 2 to 50 Medium Scale Integration MSI 50 to 5,000 Large Scale Integration LSI 5,000 to 100,000 Very Large Scale Integration VLSI 100,000 to 10,000,000 Ultra Large Scale Integration ULSI 10,000,000 to 1,000,000,000 Super Large Scale Integration SLSI over 1,000,000,000
- 12. International Technology Roadmap forSemiconductors (ITRS) Progress of miniaturization and comparison of sizes of semiconductor manufacturing process nodes with some microscopic objects and visible light wavelengths
- 13. International Technology Roadmap forSemiconductors (ITRS) 1995 1997 1999 2001 2004 2007 Minimum feature size (mm) 0.35 0.25 0.18 0.13 0.10 0.07 DRAM Bits/chip 64 M 256 M 1 G 4 G 16 G 64 G Cost/bits @ volume (millicents) 0.017 0.007 0.003 0.001 0.0005 0.0002 Microprocessor Transistors/cm2 4 M 7 M 13 M 25 M 50 M 90 M Cost/Transistor @ volume (millicents) 1 0.5 0.2 0.1 0.05 0.02 ASIC Transistors/cm2 2 M 4 M 7 M 13 M 25 M 40 M Cost/Transistor @ volume (millicents) 0.3 0.1 0.05 0.03 0.02 0.01 Wafer size (mm) 200 200 200 - 300 300 300 300 – 400 (?)
- 14. Julius Edgar Lilienfeld (April18, 1882 – August 28, 1963) Julius Edgar Lilienfeld was an Austro-Hungarian physicist. He was born in Lemberg in Austria-Hungary (now called Lviv in Ukraine), moved to the United States in the early 1920s, originally in order to defend patents he possessed, and then made a scientific/industrial career there. He invented an "FET-like" transistor and the electrolytic capacitor in the 1920s.
- 15. He filed severalpatents describing the construction and operation of transistors as well as many features of modern transistors. (US patent #1,745,175 for an FET-like transistor was granted January 28, 1930.) When Brattain, Bardeen, and Robert Gibney tried to get patents on their earliest devices, most of their claims were rejected due to the Lilienfeld patents. The optical radiation emitted when electrons are hitting a metal surface is named "Lilienfeld radiation" after he first discovered it close to X-ray tube anodes. Its origin is attributed to the excitation of plasmons in the metal surface. The American Physical Society has named one of its major prizes after Lilienfeld.
- 16. Brief History FET-like"transistor by Julius Edgar Lilienfeld, 1920 First Transistor, AT&T Bell Lab, 1947 (William Shockley, John Bardeen and Walter Brattain) (Ge) First Single Crystal Germanium, 1950 First Single Crystal Silicon, 1952 First IC device, TI, 1958 (Jack Kilby) First IC product, Fairchild Camera, 1961(Robert Noyce)
- 17. First Transistor, BellLab, 1947 Photo courtesy: AT&T Archive
- 18. John Bardeen, WilliamShockley and Walter Brattain Photo courtesy: Lucent Technologies Inc. First Transistor and Its Inventors
- 19. First IC DeviceMade by Jack Kilby of Texas Instrument in 1958 Photo courtesy: Texas Instruments
- 20. First Silicon ICChip Made by Robert Noyce of Fairchild Camera in 1961 Photo courtesy: Fairchild Semiconductor International
- 21.
- 22. IC Design: CMOS Inverter Metal1, AlCu P-Epi P-Wafer N-WellP-Well PMD p + p +n +n + W Metal 1 Contact P-well N-wellPolycide gate and local interconnection N-channel active region N-channel Vt N-channel LDD N-channel S/D P-channel active region P-channel Vt P-channel LDD P-channel S/D Shallow trench isolation (STI) Vss Vdd NMOS PMOS Vin Vout STI (a) (b) (c)
- 23.
- 24. CMOS Chip with 4Metal Layers FSG Metal 4 Copper Passivation 1, USG Passivation 2, nitride Lead-tin alloy bump FSG CopperMetal 2 FSG FSG CopperMetal 3 FSG P-epi P-wafer N-wellP-well n+ STI p+ p+ USGn+ PSG Tungsten FSG Cu Cu Tantalum barrier layer Nitride etch stop layer Nitride seal layer M 1 Tungsten local Interconnection Tungsten plug PMD nitride barrier layer T/TiN barrier & adhesion layer Tantalum barrier layer