Software and Systems Engineering Standards: Verification and Validation of Sy...
Vlsi td introduction
1. VLSI Technology and Design
1
III YEAR II SEMESTER ECE
( (AUTONOMOUS)
(AY: 2021-2022)
DR. G. PRASAD ACHARYA, ASSOCIATE PROFESSOR, ECE DEPT.
7C611
2. Course Objectives :
• The objectives of this course is to provide the students
an in-depth knowledge on various aspects of VLSI
circuits and their design including testing.
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3. 3
After studying this course, the students will be able to
• CO1: Understand the existing device technologies and IC fabrication
process
• CO2: Explore and analyze the electrical properties of the devices of CMOS
device.
• CO3: Design basic logic gates, combinational and sequential circuits using
CMOS logic.
• CO4: Analyze the effects of parasitic on IC power and performance.
• CO5: Design memory cells and basic data path units.
• CO6: Explore the need for testing and design verification of VLSI circuits.
Course Outcomes
4. Mapping between Course outcomes and
Program outcomes
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CO PO 1 PO 2 PO 3 PO 4 PO 5 PO 6 PO 7 PO 8 PO 9 PO 10 PO 11 PO 12 PSO1 PSO 2 PSO 3
CO1 3 3 2 2 2 3 2
CO2 2 2 2 2 2 1
CO3 2 1 3 2 2 3
CO4 3 3 2 2 2 2 3 3
CO5 3 3 2 2 2 2 1 3 2
CO6 3 2 2 2 2 1 3
CO 3 3 2 2 2 2 2 3 3
5. Syllabus
• UNIT I
INTRODUCTION TO MOS TECHNOLOGIES: MOS, PMOS, NMOS, CMOS &
BiCMOS
INTRODUCTION TO IC TECHNOLOGY AND FABRICATION PROCESS: VLSI
Design Flow, Oxidation, Lithography, Diffusion, Ion Implantation,
Metallisation, Encapsulation, Probe testing, Integrated Resistors and
Capacitors [T1-CH1, 2 & 3].
• UNIT II
BASIC ELECTRICAL PROPERTIES: Basic Electrical Properties of MOS and
BiCMOS Circuits: Ids-Vds relationships, MOS transistor threshold Voltage,
gm, gds, Figure of Merit (ωo), Zpu/Zpd, Latch-Up in CMOS, Pass Transistors
[T1-CH2]
INVERTERS: NMOS Inverter, Various Pull-Ups, CMOS Inverter Analysis and
Design, Bi-CMOS Inverters [T1-CH2]
• UNIT III Anupama Rani N, Assistant Professor,
ECE
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6. Syllabus
• UNIT III
CIRCUIT DESIGN PROCESSES: MOS Layers, Stick Diagrams, Lamda-based
CMOS Design rules for Wires, Contacts and Transistors, Layout Diagrams
for NMOS and CMOS Inverters and Gates, Scaling of MOS circuits,
Limitations of Scaling. [T1-CH3]
GATES: CMOS Logic Gates and Structures, Switch logic, Layout Diagrams
Gates [T1-CH5]
• UNIT IV
DELAYS: Sheet Resistance Rs and its concept to MOS, Area Capacitance
Units, Calculations - Cg, τ-Delays, Driving large Capacitive Loads, Wiring
Capacitances, Fan-in and fan-out [T1- CH 4 & 5, T2-CH4]
Semiconductor Integrated circuit Design: PLD’s, Introduction to CPLD’s
and FPGA’s.
Anupama Rani N, Assistant Professor,
ECE
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7. Syllabus
• UNIT V
MEMORY AND SUBSYSTEM DESIGN: Latches and Registers [T2-CH7],
Clocking strategies (Single Phase) [T1-CH5.5], Memory cells (SRAM &
DRAM), Adders, Shifter, Multipliers and ALUs [T1- CH8]
• UNIT VI
INTRODUCTION TO CMOS TESTING: CMOS Testing, Need for testing, Test
Principles, Design Strategies for Test, Chip level Test Techniques, System-
level Test Techniques [T1-CH7]
• TEXTBOOKS:
Basic VLSI Design –Douglas A. Pucknell, Kamran Eshraghian, PHI, 3rd Edition,2005.
Principles of CMOS VLSI Design - Weste and Eshraghian, Pearson Education, Second Edition,
2009.
• REFERENCES:
Chip Design for Submicron VLSI: CMOS Layout & Simulation, - John P. Uyemura, Thomson
Learning.
Introduction to VLSI Circuits and Systems - John .P. Uyemura, JohnWiley, 2003.
Digital Integrated Circuits: A Design Perspective - John M. Rabaey, 2/E, 2002
Modern VLSI Design - Wayne Wolf, Pearson Education, 3rd Edition, 1997.
VLSI Technology – S.M. SZE, 2nd Edition, TMH, 2003.
Anupama Rani N, Assistant Professor,
ECE
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8. • Analog Layout Design.
• RTL Design.
• Design Verification.
• DFT.
• Physical Design.
• Physical Verification.
• Post Silicon Validation etc.
Sub-areas in VLSI
11. Integrated Circuits
What is an Integrated Circuit?
Where do you use an Integrated Circuit?
Why do you prefer an Integrated Circuit to
the circuits made by interconnecting discrete
components?
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12. Def: The “Integrated Circuit “ or IC is a
miniature, low cost electronic circuit
consisting of active and passive components
that are irreparably joined together on a
single crystal chip of silicon.
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In 1958 Jack Kilby of Texas Instruments invented first IC
13. 13
The Transistor Revolution
First transistor
Bell Labs, 1948
invention of the
transistor
at Bell Telephone
Laboratories in1947
[ Bardeen], followed by
the introduction of the
bipolar transistor by
Schockley in
1949 [Schockley]
14. 14
The First Integrated Circuits
Bipolar logic
1960’s
ECL 3-input Gate
Motorola 1966
- TTL had the advantage, however, of offering a
higher integration density and was the basis of
the first integrated circuit revolution.
-In fact, the manufacturing of TTL components is
what spear-headed the first large semiconductor
companies such as Fair-child, National, and
Texas Instruments.
- The family was so successful that it composed
the largest fraction of the digital semiconductor
market until the 1980s.
15. 15
Intel 4004 Micro-Processor
1971
1000 transistors
1 MHz operation
Handcrafted
These processors were
implemented in NMOS-
only logic, which has the
advantage of higher
speed over the PMOS
logic.
First 4Kbit MOS memory :1970
16. 16
Intel Pentium (IV) microprocessor
year 2000
~40 million transistors
Hierarchical approach
17. 17
Moore’s Law (amazing visionary)
In 1965, Gordon Moore noted that the number
of transistors on a chip doubled every 18 to 24
months.
He made a prediction that semiconductor
technology will double its effectiveness every 18
months
* Integration density and performance of integrated circuits have gone
through an astounding revolution in the last couple of decades.
