Single electron transistors (SETs) operate using the quantum mechanical principle of electron tunneling. An SET contains a quantum dot between two junctions that can trap single electrons. Logic gates can be implemented using n-type and p-type SETs that are turned on or off by the gate voltage. Programmable logic is also possible using non-volatile memory to dynamically configure SETs. While SETs allow for high programmability, they face challenges including susceptibility to background charge, low operating temperatures, and fabrication difficulties.
The single electron transistor is made of an island/quantum dot connected through two tunneling junctions to a drain and a source electrode. When there is no bias on any electrode, electrons in the system do not have enough energy to tunnel through the junctions i.e. the transistor is in off state.
The single electron transistor is made of an island/quantum dot connected through two tunneling junctions to a drain and a source electrode. When there is no bias on any electrode, electrons in the system do not have enough energy to tunnel through the junctions i.e. the transistor is in off state.
New technology Model for 1 nm Transistors better than FIN-FET Technology.This slide Tells you in general about the nanotubes, how they are formed and why they are better than MOSFETs
Analytical Modeling of Tunneling Field Effect Transistor (TFET)Abu Obayda
Tunneling Field-Effect Transistor (TFET) has emerged as an alternative for conventional CMOS by enabling the supply voltage, VDD, scaling in ultra-low power, energy efficient computing, due to its sub-60 mV/decade sub-threshold slope (SS). Given its unique device characteristics such as the asymmetrical source/drain design induced unidirectional conduction, enhanced on-state Miller capacitance effect and steep switching at low voltages, TFET based circuit design requires strong interactions between the device-level and the circuit-level to explore the performance benefits, with certain modifications of the conventional CMOS circuits to achieve the functionality and optimal energy efficiency. Because TFET operates at low supply voltage range (VDD<0.5V) to outperform CMOS, reliability issues can have profound impact on the circuit design from the practical application perspective. In this thesis report, we have analyzed the drain current characteristics of TFET with respect channel length. From our simulation result, it is observed that the drain current is minimum with respect to increasing channel length for Si and the drain current decreases for all the materials when the channel length is increased and after normalization lowest value of drain current is got for 10nm channel length.
CNTFET Based Analog and Digital Circuit Designing: A ReviewIJMERJOURNAL
ABSTRACT: Silicon has been a material of choice for the last many decades and more than 95% of electronics devices are from silicon. However, silicon has reached to its saturation level and extracting more and more performance is difficult and costly now. A new material which has a potential to replace Si and can extend the scalability of devices below 22 nm is the carbon nanotube (CNT). CNT is a wonderful material possesses unique properties that make it a promising future material. CNT based field effect transistor (Cntfet) is a promising basic building block to complement the existing silicon based MOSFET and can result in the extension of the validity of Moore's law further. CNTFT has been used extensively in realizing electronics circuits. This paper presents the state of the art literature related to carbon nanotubes, carbon nanotube field effect transistors and CNTFET based circuit designing. A review of Cntfet based analog and digital circuits has been presented. It has been observed that the use of CNTFET has improved the performance of both analog and digital circuits. The work will be very useful to the people working in the field of CNT based analog and digital circuit designing.
Heterostructures, HBTs and Thyristors : Exploring the "different"Shuvan Prashant
This presentation aims at presenting the concepts of heterostructures : a structure resulting from semiconductors of different band gaps are used to form junctions. These junctions could have interesting effects due the potentials formed by the bands at the interfaces.
Photonic crystals are periodic dielectric structures that have a band gap that forbids propagation of a certain frequency range of light. This property enables one to control light with amazing facility and produce effects that are impossible with conventional optics.Photonic crystals can be fabricated for one, two, or three dimensions. One-dimensional photonic crystals can be made of layers deposited or stuck together. Two-dimensional ones can be made by photolithography, or by drilling holes in a suitable substrate. Fabrication methods for three-dimensional ones include drilling under different angles, stacking multiple 2-D layers on top of each other, direct laser writing, or, for example, instigating self-assembly of spheres in a matrix and dissolving the spheres
Single electron transistor technology based on chip implementation of smoke d...eSAT Publishing House
IJRET : International Journal of Research in Engineering and Technology is an international peer reviewed, online journal published by eSAT Publishing House for the enhancement of research in various disciplines of Engineering and Technology. The aim and scope of the journal is to provide an academic medium and an important reference for the advancement and dissemination of research results that support high-level learning, teaching and research in the fields of Engineering and Technology. We bring together Scientists, Academician, Field Engineers, Scholars and Students of related fields of Engineering and Technology
New technology Model for 1 nm Transistors better than FIN-FET Technology.This slide Tells you in general about the nanotubes, how they are formed and why they are better than MOSFETs
Analytical Modeling of Tunneling Field Effect Transistor (TFET)Abu Obayda
Tunneling Field-Effect Transistor (TFET) has emerged as an alternative for conventional CMOS by enabling the supply voltage, VDD, scaling in ultra-low power, energy efficient computing, due to its sub-60 mV/decade sub-threshold slope (SS). Given its unique device characteristics such as the asymmetrical source/drain design induced unidirectional conduction, enhanced on-state Miller capacitance effect and steep switching at low voltages, TFET based circuit design requires strong interactions between the device-level and the circuit-level to explore the performance benefits, with certain modifications of the conventional CMOS circuits to achieve the functionality and optimal energy efficiency. Because TFET operates at low supply voltage range (VDD<0.5V) to outperform CMOS, reliability issues can have profound impact on the circuit design from the practical application perspective. In this thesis report, we have analyzed the drain current characteristics of TFET with respect channel length. From our simulation result, it is observed that the drain current is minimum with respect to increasing channel length for Si and the drain current decreases for all the materials when the channel length is increased and after normalization lowest value of drain current is got for 10nm channel length.
CNTFET Based Analog and Digital Circuit Designing: A ReviewIJMERJOURNAL
ABSTRACT: Silicon has been a material of choice for the last many decades and more than 95% of electronics devices are from silicon. However, silicon has reached to its saturation level and extracting more and more performance is difficult and costly now. A new material which has a potential to replace Si and can extend the scalability of devices below 22 nm is the carbon nanotube (CNT). CNT is a wonderful material possesses unique properties that make it a promising future material. CNT based field effect transistor (Cntfet) is a promising basic building block to complement the existing silicon based MOSFET and can result in the extension of the validity of Moore's law further. CNTFT has been used extensively in realizing electronics circuits. This paper presents the state of the art literature related to carbon nanotubes, carbon nanotube field effect transistors and CNTFET based circuit designing. A review of Cntfet based analog and digital circuits has been presented. It has been observed that the use of CNTFET has improved the performance of both analog and digital circuits. The work will be very useful to the people working in the field of CNT based analog and digital circuit designing.
Heterostructures, HBTs and Thyristors : Exploring the "different"Shuvan Prashant
This presentation aims at presenting the concepts of heterostructures : a structure resulting from semiconductors of different band gaps are used to form junctions. These junctions could have interesting effects due the potentials formed by the bands at the interfaces.
Photonic crystals are periodic dielectric structures that have a band gap that forbids propagation of a certain frequency range of light. This property enables one to control light with amazing facility and produce effects that are impossible with conventional optics.Photonic crystals can be fabricated for one, two, or three dimensions. One-dimensional photonic crystals can be made of layers deposited or stuck together. Two-dimensional ones can be made by photolithography, or by drilling holes in a suitable substrate. Fabrication methods for three-dimensional ones include drilling under different angles, stacking multiple 2-D layers on top of each other, direct laser writing, or, for example, instigating self-assembly of spheres in a matrix and dissolving the spheres
Single electron transistor technology based on chip implementation of smoke d...eSAT Publishing House
IJRET : International Journal of Research in Engineering and Technology is an international peer reviewed, online journal published by eSAT Publishing House for the enhancement of research in various disciplines of Engineering and Technology. The aim and scope of the journal is to provide an academic medium and an important reference for the advancement and dissemination of research results that support high-level learning, teaching and research in the fields of Engineering and Technology. We bring together Scientists, Academician, Field Engineers, Scholars and Students of related fields of Engineering and Technology
Graphene is a one-atom-thick planar sheet of sp2-bonded carbon atoms that are densely packed in a honeycomb crystal lattice
The name ‘graphene’ comes from graphite + -ene = graphene
Theoretically, Memristors, a concatenation of “memory resistors”, are a type of passive circuit elements that maintain a relationship between the time integrals of current and voltage across a two terminal element.
Using a Field Programmable Gate Array to Accelerate Application PerformanceOdinot Stanislas
Intel s'intéresse tout particulièrement aux FPGA et notamment au potentiel qu'ils apportent lorsque les ISV et développeurs ont des besoins très spécifiques en Génomique, traitement d'images, traitement de bases de données, et même dans le Cloud. Dans ce document vous aurez l'occasion d'en savoir plus sur notre stratégie, et sur un programme de recherche lancé par Intel et Altera impliquant des Xeon E5 équipés... de FPGA
Intel is looking at FPGA and what they bring to ISVs and developers and their very specific needs in genomics, image processing, databases, and even in the cloud. In this document you will have the opportunity to learn more about our strategy, and a research program initiated by Intel and Altera involving Xeon E5 with... FPGA inside.
Auteur(s)/Author(s):
P. K. Gupta, Director of Cloud Platform Technology, Intel Corporation
Development of magnetic pulse crimping process for highdurability connection ...IJERA Editor
Generally, hand-operated and hydraulic compressors use crimping of connection terminals. However, this equipment often causes compressed defects because non-uniform pressure is applied in the circumferential direction of the terminal during crimping. A defective terminal often leads to fire in electric equipment due to overheating. Therefore, there is a need to develop a new crimping process for manufacturing highly durable terminals. MPC (magnetic pulse crimping) uses uniform electromagnetic pressure by a high magnetic field interaction between coil and terminal. This process uses only electromagnetic pressure for crimping, so the terminal can be crimped without physical contact, thereby producing a highly durable connection terminal. In this study, a MPC process was developed to fabricate a prototypical terminal. The result was compared with other crimping processes in terms of durability. The crimped part using MPC has a lower rising temperature and higher tensile strength than those using other crimping process. It is inferred from the experimental results that an optimal charging voltage exists in the MPC process
Simulation and Modeling of Silicon Based Single Electron TransistorIJECEIAES
In this work, we simulated and modeled silicon quantum dot based single electron transistor (SET). We simulated the device using non-equilibrium Green’s function (NEGF) formalism in transport direction coupled with Schrodinger equation in transverse directions. The characteristics of SET such as Coulomb blockade and Coulomb diamonds were observed. We also present a new efficient model to calculate the current voltage (IV) characteristics of the SET. The IV characteristic achieved from the model are very similar to those from simulations both in shape and magnitude. The proposed model is capable of reproducing the Coulomb diamond diagram in good agreement with the simulations. The model, which is based on transmission spectrum, is simple, efficient and provides insights on the physics of the device. The transmission spectrum at equilibrium is achieved from simulations and given as input to the model. The model then calculates the evolved transmission spectra at non-equilibrium conditions and evaluates the current using Landauers formula.
Development of magnetic pulse crimping process for highdurability connection ...IJERA Editor
Generally, hand-operated and hydraulic compressors use crimping of connection terminals. However, this equipment often causes compressed defects because non-uniform pressure is applied in the circumferential direction of the terminal during crimping. A defective terminal often leads to fire in electric equipment due to overheating. Therefore, there is a need to develop a new crimping process for manufacturing highly durable terminals. MPC (magnetic pulse crimping) uses uniform electromagnetic pressure by a high magnetic field interaction between coil and terminal. This process uses only electromagnetic pressure for crimping, so the terminal can be crimped without physical contact, thereby producing a highly durable connection terminal. In this study, a MPC process was developed to fabricate a prototypical terminal. The result was compared with other crimping processes in terms of durability. The crimped part using MPC has a lower rising temperature and higher tensile strength than those using other crimping process. It is inferred from the experimental results that an optimal charging voltage exists in the MPC process
ESDEMC_PB2014.08 An Ethernet Cable Discharge Event (CDE) Test and Measurement...ESDEMC Technology LLC
Abstract — A Cable Discharge Event (CDE) is an electrostatic discharge between a cable and a connector. CDEs occur on unshielded Ethernet based communication interfaces and inject currents into the pins directly [1-3]. The charging processes are in general understood; however, the discharge processes are complicated due to the number of pins involved and their connections to a system. Based on an understanding of the factors which determine the severity of a CDE, this article describes how to setup a variety of repeatable CDE tests and how to analyze the measurement results.
Keywords — Cable Discharge Event (CDE) Test; Cable ESD;
Design Simulation and Analysis of SET & SET-CMOS GatesSabbib Alam
Single Electron Transistor is the best candidate in the era of Nano-Technology because of its very low power consumption, high switching speed and super sensitivity. In this paper two types of logic gates design have been proposed using Single Electron Transistor and SET-CMOS hybrid single electron transistor. Monte Carlo Simulation Method has been used to simulate the gate operation because of its high accuracy in quantum level. Widely used software PSPICE also support Monte Carlo Method and also provide many library functions. Simulating through Monte Carlo Method gives a clear view of inner work for both Single Electron Transistor and Hybrid Single Electron Transistor Circuits.
Single elctron transistor PHASE 1.pptxssuser1580e5
PART-01
Single electron devices (SEDs) are the promising candidates where the bits can be defined using only a few electrons, leading to circuits with immunity from statistical fluctuations in the number of electrons per bit and very low power consumption
A presentation explaining how to calculate fault currents for 3-phase or 1-phase faults in power grid. Particularly useful for engineers working in electrical power transmission company.
LF Energy Webinar: Electrical Grid Modelling and Simulation Through PowSyBl -...DanBrown980551
Do you want to learn how to model and simulate an electrical network from scratch in under an hour?
Then welcome to this PowSyBl workshop, hosted by Rte, the French Transmission System Operator (TSO)!
During the webinar, you will discover the PowSyBl ecosystem as well as handle and study an electrical network through an interactive Python notebook.
PowSyBl is an open source project hosted by LF Energy, which offers a comprehensive set of features for electrical grid modelling and simulation. Among other advanced features, PowSyBl provides:
- A fully editable and extendable library for grid component modelling;
- Visualization tools to display your network;
- Grid simulation tools, such as power flows, security analyses (with or without remedial actions) and sensitivity analyses;
The framework is mostly written in Java, with a Python binding so that Python developers can access PowSyBl functionalities as well.
What you will learn during the webinar:
- For beginners: discover PowSyBl's functionalities through a quick general presentation and the notebook, without needing any expert coding skills;
- For advanced developers: master the skills to efficiently apply PowSyBl functionalities to your real-world scenarios.
GraphRAG is All You need? LLM & Knowledge GraphGuy Korland
Guy Korland, CEO and Co-founder of FalkorDB, will review two articles on the integration of language models with knowledge graphs.
1. Unifying Large Language Models and Knowledge Graphs: A Roadmap.
https://arxiv.org/abs/2306.08302
2. Microsoft Research's GraphRAG paper and a review paper on various uses of knowledge graphs:
https://www.microsoft.com/en-us/research/blog/graphrag-unlocking-llm-discovery-on-narrative-private-data/
Epistemic Interaction - tuning interfaces to provide information for AI supportAlan Dix
Paper presented at SYNERGY workshop at AVI 2024, Genoa, Italy. 3rd June 2024
https://alandix.com/academic/papers/synergy2024-epistemic/
As machine learning integrates deeper into human-computer interactions, the concept of epistemic interaction emerges, aiming to refine these interactions to enhance system adaptability. This approach encourages minor, intentional adjustments in user behaviour to enrich the data available for system learning. This paper introduces epistemic interaction within the context of human-system communication, illustrating how deliberate interaction design can improve system understanding and adaptation. Through concrete examples, we demonstrate the potential of epistemic interaction to significantly advance human-computer interaction by leveraging intuitive human communication strategies to inform system design and functionality, offering a novel pathway for enriching user-system engagements.
The Art of the Pitch: WordPress Relationships and SalesLaura Byrne
Clients don’t know what they don’t know. What web solutions are right for them? How does WordPress come into the picture? How do you make sure you understand scope and timeline? What do you do if sometime changes?
All these questions and more will be explored as we talk about matching clients’ needs with what your agency offers without pulling teeth or pulling your hair out. Practical tips, and strategies for successful relationship building that leads to closing the deal.
Neuro-symbolic is not enough, we need neuro-*semantic*Frank van Harmelen
Neuro-symbolic (NeSy) AI is on the rise. However, simply machine learning on just any symbolic structure is not sufficient to really harvest the gains of NeSy. These will only be gained when the symbolic structures have an actual semantics. I give an operational definition of semantics as “predictable inference”.
All of this illustrated with link prediction over knowledge graphs, but the argument is general.
UiPath Test Automation using UiPath Test Suite series, part 3DianaGray10
Welcome to UiPath Test Automation using UiPath Test Suite series part 3. In this session, we will cover desktop automation along with UI automation.
Topics covered:
UI automation Introduction,
UI automation Sample
Desktop automation flow
Pradeep Chinnala, Senior Consultant Automation Developer @WonderBotz and UiPath MVP
Deepak Rai, Automation Practice Lead, Boundaryless Group and UiPath MVP
UiPath Test Automation using UiPath Test Suite series, part 4DianaGray10
Welcome to UiPath Test Automation using UiPath Test Suite series part 4. In this session, we will cover Test Manager overview along with SAP heatmap.
The UiPath Test Manager overview with SAP heatmap webinar offers a concise yet comprehensive exploration of the role of a Test Manager within SAP environments, coupled with the utilization of heatmaps for effective testing strategies.
Participants will gain insights into the responsibilities, challenges, and best practices associated with test management in SAP projects. Additionally, the webinar delves into the significance of heatmaps as a visual aid for identifying testing priorities, areas of risk, and resource allocation within SAP landscapes. Through this session, attendees can expect to enhance their understanding of test management principles while learning practical approaches to optimize testing processes in SAP environments using heatmap visualization techniques
What will you get from this session?
1. Insights into SAP testing best practices
2. Heatmap utilization for testing
3. Optimization of testing processes
4. Demo
Topics covered:
Execution from the test manager
Orchestrator execution result
Defect reporting
SAP heatmap example with demo
Speaker:
Deepak Rai, Automation Practice Lead, Boundaryless Group and UiPath MVP
Dev Dives: Train smarter, not harder – active learning and UiPath LLMs for do...UiPathCommunity
💥 Speed, accuracy, and scaling – discover the superpowers of GenAI in action with UiPath Document Understanding and Communications Mining™:
See how to accelerate model training and optimize model performance with active learning
Learn about the latest enhancements to out-of-the-box document processing – with little to no training required
Get an exclusive demo of the new family of UiPath LLMs – GenAI models specialized for processing different types of documents and messages
This is a hands-on session specifically designed for automation developers and AI enthusiasts seeking to enhance their knowledge in leveraging the latest intelligent document processing capabilities offered by UiPath.
Speakers:
👨🏫 Andras Palfi, Senior Product Manager, UiPath
👩🏫 Lenka Dulovicova, Product Program Manager, UiPath
Builder.ai Founder Sachin Dev Duggal's Strategic Approach to Create an Innova...Ramesh Iyer
In today's fast-changing business world, Companies that adapt and embrace new ideas often need help to keep up with the competition. However, fostering a culture of innovation takes much work. It takes vision, leadership and willingness to take risks in the right proportion. Sachin Dev Duggal, co-founder of Builder.ai, has perfected the art of this balance, creating a company culture where creativity and growth are nurtured at each stage.
Securing your Kubernetes cluster_ a step-by-step guide to success !KatiaHIMEUR1
Today, after several years of existence, an extremely active community and an ultra-dynamic ecosystem, Kubernetes has established itself as the de facto standard in container orchestration. Thanks to a wide range of managed services, it has never been so easy to set up a ready-to-use Kubernetes cluster.
However, this ease of use means that the subject of security in Kubernetes is often left for later, or even neglected. This exposes companies to significant risks.
In this talk, I'll show you step-by-step how to secure your Kubernetes cluster for greater peace of mind and reliability.
Connector Corner: Automate dynamic content and events by pushing a buttonDianaGray10
Here is something new! In our next Connector Corner webinar, we will demonstrate how you can use a single workflow to:
Create a campaign using Mailchimp with merge tags/fields
Send an interactive Slack channel message (using buttons)
Have the message received by managers and peers along with a test email for review
But there’s more:
In a second workflow supporting the same use case, you’ll see:
Your campaign sent to target colleagues for approval
If the “Approve” button is clicked, a Jira/Zendesk ticket is created for the marketing design team
But—if the “Reject” button is pushed, colleagues will be alerted via Slack message
Join us to learn more about this new, human-in-the-loop capability, brought to you by Integration Service connectors.
And...
Speakers:
Akshay Agnihotri, Product Manager
Charlie Greenberg, Host
2. Overview
• What is SET??
• How it works??
• Logic Implementation
• Programmable Logic Implementation
• Limitations of SETs
3/26/2014 5:20 AM
Piyush Kumar Sinha
(piyush.cuj@gmail.com)
2
3. What is a Single Electron
Transistor (SET)??
• Device based on ‘Quantum mechanical
principles’
• Exploits ‘Quantum effect of tunneling’.
• Tunneling on purpose.
• one electron sufficient to define a logic
state.
• Tunneling : a discrete process
20-2-2014 2
Freeze Francis
freezefrancis@gmail.com
4. TheTunneling Phenomenon
•Tunneling is possible because of the wave-like properties of matter.
•Quantum mechanics allows a small particle, such as an electron, to overcome a potential barrier
larger than its kinetic energy.
•Transmission Probability: T ≈ 16ε(1 – ε)e-2κL
• Tunnelling on purpose: Make ‘T ‘ very high
=> Adjust device parameters
3/26/2014 5:20 AM 3
Freeze Francis
freezefrancis@gmail.com
5. Introduction to Single Electron
Transistor:
• A Quantum Dot(QD) or Island.
• Two tunnels Junctions
• A Gate electrode
• Gate capacitor
• ( optional ) 2nd Gate electrode
Symmetric device : S and D interchangeable
3/26/2014 5:20 AM 4
Freeze Francis
freezefrancis@gmail.com
8. What Happens in SET..??
A SET is similar to a
normal MOS
transistor, except
1) the channel is replaced by a nano
dot.
2) the dot is separated from source
and drain by thin insulators (SiO2).
An electron tunnels in two steps:
source dot drain
• The gate voltage Vg is used to
control the charge on the gate-dot
capacitor Cg .
3/26/2014 5:20 AM 6
Freeze Francis
freezefrancis@gmail.com
9. COULOMB BLOCKADE
• Electron transfers on island : based on Coulomb
interaction.
• “ Island’s electrostatic potential increases with the
addition of an electron and addition of further
electrons becomes more difficult”
• For electron to hop onto the island:
Its Energy =Charging energy, Ec =e^2 /2Cg
• Provide ext. bias voltage…
3/26/2014 5:20 AM
Freeze Francis
freezefrancis@gmail.com 9
10. Contd..
• At Vg = e/2C ,current rises
• Additional voltage ‘e/C’ (Coulomb gap
voltage), for further increase.
• Periodic Id-Vg chara. (Coulomb oscillations)
• -- CB alleviates any leakage current--
3/26/2014 5:20 AM
Freeze Francis
freezefrancis@gmail.com 10
12. Energy Band Diagram
No bias voltages
Filled and unfilled states
Energy of QD increases on tunneling
(Tunneling is Impossible)
3/26/2014 5:20 AM
Freeze Francis
freezefrancis@gmail.com
12
13. Energy band diagram
Applying small Vds >0
Applying Vg>0 with Vds>0 ,such that:
eVg = Ec => Vg=e/2C
3/26/2014 5:20 AM
Freeze Francis
freezefrancis@gmail.com
13
14. On Increasing Vg…..
Single electron tunnelling
Two electron tunneling
Current rises..
3/26/2014 5:20 AM
Freeze Francis
freezefrancis@gmail.com
14
15. On Increasing Vg…..
Electron gets trapped..
Current drops
Both electrons trapped
Current=0
3/26/2014 5:20 AM
Freeze Francis
freezefrancis@gmail.com 15
16. Conductance v/s Vg plot
3/26/2014 5:20 AM
Freeze Francis
freezefrancis@gmail.com
16
17. LOGIC IMPLEMENTATION
• nMOS nSET
( ON when Vg=‘1’)
• pMOS pSET
( ON when Vg=‘0’)
• To realise pSET :
=>Use 2nd Gate electrode..!!
=> Apply reqd. voltage to shift I-V characteristics
3/26/2014 5:20 AM
Freeze Francis
freezefrancis@gmail.com
17
19. PROGRAMMABLE LOGIC
• With the help of Non Volatile Memory (NVM)
function. (implemented using SETs)
• NVM node is capacitively coupled to the
ISLAND
• SET I-V characteristics programmed via NVM.
i.e SET can dynamically change to pSET or nSET.
3/26/2014 5:20 AM
Freeze Francis
freezefrancis@gmail.com 19
22. SPICE Simulation O/p waveform
3/26/2014 5:20 AM
Freeze Francis
freezefrancis@gmail.com
22
23. ADVANTAGES OF PROGRAMMABLE
SET LOGIC
• High degree of programmability with low
device count.
• A single logic ckt can implement many logic
functions..!
• Impossible with CMOS tech.
3/26/2014 5:20 AM
Freeze Francis
freezefrancis@gmail.com 23
24. LIMITATIONS OF SET
• Susceptible to Back ground charge.
• High bit error rates.
• Room temperature operation.
• Fabrication.
• Low fanout (High o/p impedance).
3/26/2014 5:20 AM
Freeze Francis
freezefrancis@gmail.com
24
25. ConclusionThe future of SETs looks very
bright. Instead of working with
millions of electrons in today’s
MOS tech., one can realize the limit
of calculating with single
electrons. No matter how good SET
tech. might turn out to be, it is hard
to imagine that it will replace MOS
tech. completely. The biggest
benefits seem to lie in the clever
combination of both.
Moore’s Law will
sustain......!!3/26/2014 5:20 AM
Freeze Francis
freezefrancis@gmail.com
25
26. REFERENCES
1. Ken Uchida , Junji Koga, Ryuji Ohba, and Akira
Toriumi , " Programmable Single Electron Transistor
Logic for Future Low-Power Intelligent LSI: Proposal
and RoomTemperature Operation", IEEE Transactions
on Electronic Devices,vol. 50, no. 7,July 2003.
2. Abann Sunny, Aiswariya S, A.J Rose, Jerrin
Joseph, Mangal Jolly,Vinod Pangracious, “Design
& Implementation of Configurable Logic Block (CLB)
Using SET Based QCA Technology”, IEEE Conference
Publications, Pages: 137 – 142, 2012.
3. M. A. Kastner, “The single electron transistor and
artificial atoms”, Department of
Physics, Massachusetts Institute of
Technology, Cambridge, MA 02139 USA.3/26/2014 5:20 AM
Freeze Francis
freezefrancis@gmail.com
26