In this work, we simulated and modeled silicon quantum dot based single electron transistor (SET). We simulated the device using non-equilibrium Green’s function (NEGF) formalism in transport direction coupled with Schrodinger equation in transverse directions. The characteristics of SET such as Coulomb blockade and Coulomb diamonds were observed. We also present a new efficient model to calculate the current voltage (IV) characteristics of the SET. The IV characteristic achieved from the model are very similar to those from simulations both in shape and magnitude. The proposed model is capable of reproducing the Coulomb diamond diagram in good agreement with the simulations. The model, which is based on transmission spectrum, is simple, efficient and provides insights on the physics of the device. The transmission spectrum at equilibrium is achieved from simulations and given as input to the model. The model then calculates the evolved transmission spectra at non-equilibrium conditions and evaluates the current using Landauers formula.
SINGLE ELECTRON TRANSISTOR: APPLICATIONS & PROBLEMSVLSICS Design
The goal of this paper is to review in brief the basic physics of nanoelectronic device single-electron transistor [SET] as well as prospective applications and problems in their applications. SET functioning based on the controllable transfer of single electrons between small conducting "islands". The device properties dominated by the quantum mechanical properties of matter and provide new characteristics coulomb oscillation, coulomb blockade that is helpful in a number of applications. SET is able to shear domain with silicon transistor in near future and enhance the device density. Recent research in SET gives new ideas which are going to revolutionize the random access memory and digital data storage technologies.
Studying nanotube-based oscillators and their application as memory cells via...IJERA Editor
A nanoscale continuum model of carbon nanotube-based oscillators is proposed in this paper. In the continuum
model, the nanotube is discretized via the meshfree particle method. The atomistic interlayer interaction between
the outer and inner tubes is approximated by the interlayer interaction between particles. The mechanical
behaviors of oscillators are studied and compared well with molecular dynamics simulation results. The
nanotube-based oscillator can be employed to design a nanoelectromechanical system. In this system, two
electrodes are attached on the top of the outer tube so that the induced electromagnetic force can overcome the
interlayer friction. The mechanisms of such nanoelectromechanical systems as memory cells are also considered.
EFFECTIVE PEEC MODELING OF TRANSMISSION LINES STRUCTURES USING A SELECTIVE ME...EEIJ journal
The transmission lines structures are quite common in the system of electromagnetic compatibility (EMC)
analysis. The increasing complexities of physical structures make electromagnetic modeling an
increasingly tough task, and computational efficiency is desirable. In this paper, a novel selective mesh
approach is presented for partial element equivalent circuit (PEEC) modeling where intense coupling parts
are meshed while the remaining parts are eliminated. With the proposed approach, the meshed ground
plane is dependent on the length and height of the above transmission lines. Relevant compact formulae for
determining mesh boundaries are deduced, and a procedure of general mesh generation is also given. A
numerical example is presented, and a validation check is accomplished, showing that the approach leads
to a significant reduction in unknowns and thus computation time and consumed memories, while
preserving the sufficient precision. This approach is especially useful for modeling the electromagnetic
coupling of transmission lines and reference ground, and it may also be beneficial for other equivalent
circuit modeling techniques.
SINGLE ELECTRON TRANSISTOR: APPLICATIONS & PROBLEMSVLSICS Design
The goal of this paper is to review in brief the basic physics of nanoelectronic device single-electron transistor [SET] as well as prospective applications and problems in their applications. SET functioning based on the controllable transfer of single electrons between small conducting "islands". The device properties dominated by the quantum mechanical properties of matter and provide new characteristics coulomb oscillation, coulomb blockade that is helpful in a number of applications. SET is able to shear domain with silicon transistor in near future and enhance the device density. Recent research in SET gives new ideas which are going to revolutionize the random access memory and digital data storage technologies.
Studying nanotube-based oscillators and their application as memory cells via...IJERA Editor
A nanoscale continuum model of carbon nanotube-based oscillators is proposed in this paper. In the continuum
model, the nanotube is discretized via the meshfree particle method. The atomistic interlayer interaction between
the outer and inner tubes is approximated by the interlayer interaction between particles. The mechanical
behaviors of oscillators are studied and compared well with molecular dynamics simulation results. The
nanotube-based oscillator can be employed to design a nanoelectromechanical system. In this system, two
electrodes are attached on the top of the outer tube so that the induced electromagnetic force can overcome the
interlayer friction. The mechanisms of such nanoelectromechanical systems as memory cells are also considered.
EFFECTIVE PEEC MODELING OF TRANSMISSION LINES STRUCTURES USING A SELECTIVE ME...EEIJ journal
The transmission lines structures are quite common in the system of electromagnetic compatibility (EMC)
analysis. The increasing complexities of physical structures make electromagnetic modeling an
increasingly tough task, and computational efficiency is desirable. In this paper, a novel selective mesh
approach is presented for partial element equivalent circuit (PEEC) modeling where intense coupling parts
are meshed while the remaining parts are eliminated. With the proposed approach, the meshed ground
plane is dependent on the length and height of the above transmission lines. Relevant compact formulae for
determining mesh boundaries are deduced, and a procedure of general mesh generation is also given. A
numerical example is presented, and a validation check is accomplished, showing that the approach leads
to a significant reduction in unknowns and thus computation time and consumed memories, while
preserving the sufficient precision. This approach is especially useful for modeling the electromagnetic
coupling of transmission lines and reference ground, and it may also be beneficial for other equivalent
circuit modeling techniques.
An introduction to the fundamental physics of transparent conducting oxides including a review of the electrical and optical properties of common materials.
Modeling and Simulation of Biaxial Strained P-MOSFETs: Application to a Singl...IJECEIAES
The objectives of this work are focused on the application of strained silicon on MOSFET transistor. To do this, impact and benefits obtained with the use of strained silicon technology on p-channel MOSFETs are presented. This research attempt to create conventional and two-strained silicon MOSFETs fabricated from the use of TCAD, which is a simulation tool from Silvaco. In our research, two-dimensional simulation of conventional MOSFET, biaxial strained PMOSFET and dual channel strained P-MOSFET has been achieved to extract their characteristics. ATHENA and ATLAS have been used to simulate the process and validate the electronic characteristics. Our results allow showing improvements obtained by comparing the three structures and their characteristics. The maximum of carrier mobility improvement is achieved with percentage of 35.29 % and 70.59 % respectively, by result an improvement in drive current with percentage of 36.54 % and 236.71 %, and reduction of leakage current with percentage of 59.45 % and 82.75 %, the threshold voltage is also enhaced with percentage of: 60 % and 61.4%. Our simulation results highlight the importance of incorporating strain technology in MOSFET transistors.
THE EFFECT OF INTERFACE MODIFICATION BY PEDOT: PSS ON THE HOLE MOBILITY OF TH...ijoejournal
The purpose of the work is to understand how to effect the interface PEDOT: PSS on the hole mobility of
the LEC device by Space Charge Limited Current (SCLC) approaches technique. PEDOT: PSS plays a
significant role in organic electronics device as interface modification, particularly on Light-emitting
electrochemical cells (LEC) due to fundamental structure of hole only device. This study analyses the hole
mobility of the device based on current-voltage characteristic approach at room temperature. It has been
observed that the PEDOT: PSS interface increases the hole mobility of the LEC device by a factor of 108
.
Recent research shows the tremendous potential for the development of optical devices viz. photo-detector, optical sources, connectors and applications etc. This is mainly because of the success of optical communication in the recent for gigabit transmission and is intended for terabits transmission in future. In this paper, mathematical model for the optical dependence of I-V, C-V characteristics of MISFET structure (to be used as photo-detector) is reported. Model is based on solution of Poisson‟s and current continuity equation. Proposed structure of MISFET includes, In0.53Ga0.47As used as substrate material and InP as insulator. Light is made to incident perpendicular to the surface. Drain current can be controlled optically by means of varying light intensity of incident radiation. There is significant effect of intensity modulation on IV and CV characteristics of MISFET. As a result of intensity modulation, drain current increases significantly in presence of illumination mainly due to change in carrier concentration of channel results from photo-generated carriers. Simulation of mathematical model is carried out in MATLAB.
MODELING OF PLANAR METAMATERIAL STRUCTURE AND ITS EFFECTIVE PARAMETER EXTRACTIONIAEME Publication
This paper is about designing a Metamaterial structure and the Scattering Parameter Extraction Method that has become a prime tool for Metamaterial characterization so that there is a better understanding of relation between their configuration and associated properties of these materials in terms of negative permittivity and negative permeability to explore application potential. A 2D planar Metamaterial structure has been designed, fabricated and analyzed. It consists of conducting patches and meander lines on a dielectric substrate. Electromagnetic modeling was carried out using Finite Difference Time Domain method based simulation tool EMPIRE XCcel.
A Drift-Diffusion Model to Simulate Current for Avalanche Photo DetectorIJERA Editor
In this research, a Drift-Diffusion model is carried out to calculate includes impact ionization mechanism and can calculate dark current and photocurrent of avalanche photo diode. Poisson equation, electron and hole density continuity equations and electron and hole current equations have been solved simultaneously using Gummel method. Consideration of impact ionization enables the model to completely simulate the carriers flow in high electrical field. The simulation has been done using MATLAB and the results are compared with other reliable results obtained by researchers. Our results show despite of hydrodynamics and Monte Carlo methods which are very complicated we can get the current characteristics of photo detector easily with acceptable accuracy. In addition we can use this method to calculate currents of device in high fields.
Modeling and Characterization of Single and Multichannel CNTFETMuntasir Mahdi
Electronic devices are getting smaller day by day. And so designers are working on the MOSFETs to develop smaller MOSFETs with better performance. Carbon Nanotube
Field Effect Transistor is a very good replacement for MOSFETs
and has a better response than conventional MOSFET. In this
study, we developed a CNTFET model using MATLAB and
Simulink by using an empirical model equation. The model is
very useful for circuit designers because this model can be used
as a circuit component. We described the model development
process, comparisons between our Simulink model and an ideal
CNTFET I-V curves in terms of Channel length and CNT
diameter
SIMULATION OF THE SOLAR CELLS WITH PC1D, APPLICATION TO CELLS BASED ON SILICONAEIJjournal2
A way of exploiting the solar energy is to use cells photovoltaic which convert the energy conveyed by the incidental radiation in a continuous electric current. This conversation is based on the photovoltaic effect engendered by the absorption of photons. A part of the absorbed photons generates pairs electron-hole in which an electric field created in the zone of load of space of a junction p–n. Thus, the junction p-n, its characteristics, its components and its dimensions are the parameters responsible of the efficiency and the performances of a solar cell. To study this, we are going to use a very known software in the mode of the simulation of solar cells, the PC1D, and we are going, at the end, to draw a conclusion around the ideal parameters that a good solar cell has to have.
Numerical Simulation and Efficiency Improvement of Solar Cell using Multi Lay...Dr. Amarjeet Singh
Efficiency improvement of solar cell has been
achieved using design and simulation of anti-reflecting
coating. Anti-Reflecting coating helps in deploying new
geometries shape for the evaluation of different methods to
provide for light trapping in all directions and enables full
space utilization when bringing together into device arrays.
Efficiency improvement strategies have been discussed using
efficient selection of modules and surface texturing using
TCAD tools. Significant improvement in yield and
minimization of losses was achieved using device simulation
and process simulation platform using silvaco tools. Multilayer anti reflecting coating has been designed which can be
studied to analyze the performance of system. It was observed
that multi-layer coating helps in improvement of available
current for similar light beam under simulation.
Trends in High Performance Operation of Electro Absorption Integrated Laser M...Editor IJARCET
For high bit rates and long haul optical
communication systems using a single-mode fiber, a modulator
with low chirp and small size are demanded. An electroabsorption
modulator is very attractive because it has some
advantages of not only low chirp and small size but also the
elimination of polarization control through monolithic
integration with a distributed feedback (DFB) laser. The
modulation bandwidth of traditional lumped electro-absorption
modulators (EAMs) is usually limited by the RC time constant,
but the effective resistance R and capacitance C are not easily
extracted for advanced device geometries. This paper has
presented the important transmission characteristics of electrooptic
absorption modulators such as transmission performance
efficiency, insertion loss, extinction ratio, , over wide range of the
affecting parameters.
Effect of mesh grid structure in reducing hot carrier effect of nmos device s...ijcsa
This paper presents the critical effect of mesh grid that should be considered during process and device
simulation using modern TCAD tools in order to develop and optimize their accurate electrical
characteristics. Here, the computational modelling process of developing the NMOS device structure is
performed in Athena and Atlas. The effect of Mesh grid on net doping profile, n++, and LDD sheet
resistance that could link to unwanted “Hot Carrier Effect” were investigated by varying the device grid
resolution in both directions. It is found that y-grid give more profound effect in the doping concentration,
the junction depth formation and the value of threshold voltage during simulation. Optimized mesh grid is
obtained and tested for more accurate and faster simulation. Process parameter (such as oxide thicknesses
and Sheet resistance) as well as Device Parameter (such as linear gain “beta” and SPICE level 3 mobility
roll-off parameter “ Theta”) are extracted and investigated for further different applications.
EVALUATION OF OPTICALLY ILLUMINATED MOSFET CHARACTERISTICS BY TCAD SIMULATIONVLSICS Design
In this paper we report effect of optical illumination on Silicon MOSFET. The MOSFET has been studied in respect of current voltage, transconductance admittance and scattering parameters. Gain analysis of the Silicon MOSFET is done in dark and under optical illumination. The device is fabricated using ATHENA™ process simulator and the device simulation is performed using ATLAS™ from SILVACO international. The simulation results indicate potential of MOSFET as optically sensitive structure which can be used for increase in data transmission/reception rates, reduction of interconnect delays, elimination of clock skew, or as a photodetector for optoelectronic applications at low and radio frequency.
An introduction to the fundamental physics of transparent conducting oxides including a review of the electrical and optical properties of common materials.
Modeling and Simulation of Biaxial Strained P-MOSFETs: Application to a Singl...IJECEIAES
The objectives of this work are focused on the application of strained silicon on MOSFET transistor. To do this, impact and benefits obtained with the use of strained silicon technology on p-channel MOSFETs are presented. This research attempt to create conventional and two-strained silicon MOSFETs fabricated from the use of TCAD, which is a simulation tool from Silvaco. In our research, two-dimensional simulation of conventional MOSFET, biaxial strained PMOSFET and dual channel strained P-MOSFET has been achieved to extract their characteristics. ATHENA and ATLAS have been used to simulate the process and validate the electronic characteristics. Our results allow showing improvements obtained by comparing the three structures and their characteristics. The maximum of carrier mobility improvement is achieved with percentage of 35.29 % and 70.59 % respectively, by result an improvement in drive current with percentage of 36.54 % and 236.71 %, and reduction of leakage current with percentage of 59.45 % and 82.75 %, the threshold voltage is also enhaced with percentage of: 60 % and 61.4%. Our simulation results highlight the importance of incorporating strain technology in MOSFET transistors.
THE EFFECT OF INTERFACE MODIFICATION BY PEDOT: PSS ON THE HOLE MOBILITY OF TH...ijoejournal
The purpose of the work is to understand how to effect the interface PEDOT: PSS on the hole mobility of
the LEC device by Space Charge Limited Current (SCLC) approaches technique. PEDOT: PSS plays a
significant role in organic electronics device as interface modification, particularly on Light-emitting
electrochemical cells (LEC) due to fundamental structure of hole only device. This study analyses the hole
mobility of the device based on current-voltage characteristic approach at room temperature. It has been
observed that the PEDOT: PSS interface increases the hole mobility of the LEC device by a factor of 108
.
Recent research shows the tremendous potential for the development of optical devices viz. photo-detector, optical sources, connectors and applications etc. This is mainly because of the success of optical communication in the recent for gigabit transmission and is intended for terabits transmission in future. In this paper, mathematical model for the optical dependence of I-V, C-V characteristics of MISFET structure (to be used as photo-detector) is reported. Model is based on solution of Poisson‟s and current continuity equation. Proposed structure of MISFET includes, In0.53Ga0.47As used as substrate material and InP as insulator. Light is made to incident perpendicular to the surface. Drain current can be controlled optically by means of varying light intensity of incident radiation. There is significant effect of intensity modulation on IV and CV characteristics of MISFET. As a result of intensity modulation, drain current increases significantly in presence of illumination mainly due to change in carrier concentration of channel results from photo-generated carriers. Simulation of mathematical model is carried out in MATLAB.
MODELING OF PLANAR METAMATERIAL STRUCTURE AND ITS EFFECTIVE PARAMETER EXTRACTIONIAEME Publication
This paper is about designing a Metamaterial structure and the Scattering Parameter Extraction Method that has become a prime tool for Metamaterial characterization so that there is a better understanding of relation between their configuration and associated properties of these materials in terms of negative permittivity and negative permeability to explore application potential. A 2D planar Metamaterial structure has been designed, fabricated and analyzed. It consists of conducting patches and meander lines on a dielectric substrate. Electromagnetic modeling was carried out using Finite Difference Time Domain method based simulation tool EMPIRE XCcel.
A Drift-Diffusion Model to Simulate Current for Avalanche Photo DetectorIJERA Editor
In this research, a Drift-Diffusion model is carried out to calculate includes impact ionization mechanism and can calculate dark current and photocurrent of avalanche photo diode. Poisson equation, electron and hole density continuity equations and electron and hole current equations have been solved simultaneously using Gummel method. Consideration of impact ionization enables the model to completely simulate the carriers flow in high electrical field. The simulation has been done using MATLAB and the results are compared with other reliable results obtained by researchers. Our results show despite of hydrodynamics and Monte Carlo methods which are very complicated we can get the current characteristics of photo detector easily with acceptable accuracy. In addition we can use this method to calculate currents of device in high fields.
Modeling and Characterization of Single and Multichannel CNTFETMuntasir Mahdi
Electronic devices are getting smaller day by day. And so designers are working on the MOSFETs to develop smaller MOSFETs with better performance. Carbon Nanotube
Field Effect Transistor is a very good replacement for MOSFETs
and has a better response than conventional MOSFET. In this
study, we developed a CNTFET model using MATLAB and
Simulink by using an empirical model equation. The model is
very useful for circuit designers because this model can be used
as a circuit component. We described the model development
process, comparisons between our Simulink model and an ideal
CNTFET I-V curves in terms of Channel length and CNT
diameter
SIMULATION OF THE SOLAR CELLS WITH PC1D, APPLICATION TO CELLS BASED ON SILICONAEIJjournal2
A way of exploiting the solar energy is to use cells photovoltaic which convert the energy conveyed by the incidental radiation in a continuous electric current. This conversation is based on the photovoltaic effect engendered by the absorption of photons. A part of the absorbed photons generates pairs electron-hole in which an electric field created in the zone of load of space of a junction p–n. Thus, the junction p-n, its characteristics, its components and its dimensions are the parameters responsible of the efficiency and the performances of a solar cell. To study this, we are going to use a very known software in the mode of the simulation of solar cells, the PC1D, and we are going, at the end, to draw a conclusion around the ideal parameters that a good solar cell has to have.
Numerical Simulation and Efficiency Improvement of Solar Cell using Multi Lay...Dr. Amarjeet Singh
Efficiency improvement of solar cell has been
achieved using design and simulation of anti-reflecting
coating. Anti-Reflecting coating helps in deploying new
geometries shape for the evaluation of different methods to
provide for light trapping in all directions and enables full
space utilization when bringing together into device arrays.
Efficiency improvement strategies have been discussed using
efficient selection of modules and surface texturing using
TCAD tools. Significant improvement in yield and
minimization of losses was achieved using device simulation
and process simulation platform using silvaco tools. Multilayer anti reflecting coating has been designed which can be
studied to analyze the performance of system. It was observed
that multi-layer coating helps in improvement of available
current for similar light beam under simulation.
Trends in High Performance Operation of Electro Absorption Integrated Laser M...Editor IJARCET
For high bit rates and long haul optical
communication systems using a single-mode fiber, a modulator
with low chirp and small size are demanded. An electroabsorption
modulator is very attractive because it has some
advantages of not only low chirp and small size but also the
elimination of polarization control through monolithic
integration with a distributed feedback (DFB) laser. The
modulation bandwidth of traditional lumped electro-absorption
modulators (EAMs) is usually limited by the RC time constant,
but the effective resistance R and capacitance C are not easily
extracted for advanced device geometries. This paper has
presented the important transmission characteristics of electrooptic
absorption modulators such as transmission performance
efficiency, insertion loss, extinction ratio, , over wide range of the
affecting parameters.
Effect of mesh grid structure in reducing hot carrier effect of nmos device s...ijcsa
This paper presents the critical effect of mesh grid that should be considered during process and device
simulation using modern TCAD tools in order to develop and optimize their accurate electrical
characteristics. Here, the computational modelling process of developing the NMOS device structure is
performed in Athena and Atlas. The effect of Mesh grid on net doping profile, n++, and LDD sheet
resistance that could link to unwanted “Hot Carrier Effect” were investigated by varying the device grid
resolution in both directions. It is found that y-grid give more profound effect in the doping concentration,
the junction depth formation and the value of threshold voltage during simulation. Optimized mesh grid is
obtained and tested for more accurate and faster simulation. Process parameter (such as oxide thicknesses
and Sheet resistance) as well as Device Parameter (such as linear gain “beta” and SPICE level 3 mobility
roll-off parameter “ Theta”) are extracted and investigated for further different applications.
EVALUATION OF OPTICALLY ILLUMINATED MOSFET CHARACTERISTICS BY TCAD SIMULATIONVLSICS Design
In this paper we report effect of optical illumination on Silicon MOSFET. The MOSFET has been studied in respect of current voltage, transconductance admittance and scattering parameters. Gain analysis of the Silicon MOSFET is done in dark and under optical illumination. The device is fabricated using ATHENA™ process simulator and the device simulation is performed using ATLAS™ from SILVACO international. The simulation results indicate potential of MOSFET as optically sensitive structure which can be used for increase in data transmission/reception rates, reduction of interconnect delays, elimination of clock skew, or as a photodetector for optoelectronic applications at low and radio frequency.
EVALUATION OF OPTICALLY ILLUMINATED MOSFET CHARACTERISTICS BY TCAD SIMULATIONVLSICS Design
In this paper we report effect of optical illumination on Silicon MOSFET. The MOSFET has been studied in
respect of current voltage, transconductance admittance and scattering parameters. Gain analysis of the
Silicon MOSFET is done in dark and under optical illumination. The device is fabricated using ATHENA™
process simulator and the device simulation is performed using ATLAS™ from SILVACO international.
The simulation results indicate potential of MOSFET as optically sensitive structure which can be used
for increase in data transmission/reception rates, reduction of interconnect delays, elimination of clock
skew, or as a photodetector for optoelectronic applications at low and radio frequency.
Design of carbon nanotube field effect transistor (CNTFET) small signal model IJECEIAES
The progress of Carbon Nanotube Field Effect Transistor (CNTFET) devices has facilitated the trimness of mobile phones, computers and all other electronic devices. CNTFET devices contribute to model these electronics instruments that require designing the devices. This research consists of the design and verification of the CNTFET device's small signal model. Scattering parameters (S-parameters) is extracted from the CNTFET model to construct equivalent small model circuit. Current sources, capacitors and resistors are involved to evaluate this equivalent circuit. S-parameters and small signal models are elaborated to analyze using a technique to form the small signal equivalent circuit model. In this design modeling process, at first intrinsic device's Y-parameters are determined. After that series of impedances are calculated. At last, Y-parameters model are transformed to add parasitic capacitances. The analysis result shows the acquiring high frequency performances are obtained from this equivalent circuit.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
Modeling the transport of charge carriers in the active devices diode submicr...IJERA Editor
A Monte Carlo simulation program was developed to simulate the movement of electrons in a submicron GaInP diode three dimensional (3D) with 0.1 microns-long active layer. The algorithm couples a standard Monte Carlo particle simulator for the Boltzmann equation with a 3D Poisson solver. Thus a series of hits for a specific MC submicron diode (GaInP), with an active layer (n = 2x1015cm-3) of length 0.1μm surrounded by two regions doped with n = 5x1017cm-3, are presented. The lattice temperature is 300K and the anode voltage Va is 1V. The analysis also showed that the average drift velocity to the electrons in the channel is about 5x106 cm/sec
Design and manufacturing of iris waveguide filters for satellite communicationTELKOMNIKA JOURNAL
We propose in this paper, two bandpass filters in waveguide technology having rectangular symmetrical discontinuities with a half-radius r, designed and operating respectively in the X-Band (9-11.5) GHz and C-Band (3.5-5.5) GHz. These filters consists of eight irises placed symmetrically respectively on standard rectangular waveguides WR90 and WR229 in which resonant irises are inserted. These irises are used to couple the sections very strongly in this filter, which allows the bandwidth to be increased and the matching to be controlled. The comparison between the numerical and electromagnetic results, which we obtained for the filters, constitutes a means of validation of computer simulation technology (CST) environment and Mician for the design of the other circuit elements in the various frequency bands. We observed excellent consistency between the simulation curves and those of the measurements. The results obtained are promising and pave the way for the use of these structures in the fields of telecommunications.
Design and modeling of solenoid inductor integrated with FeNiCo in high frequ...TELKOMNIKA JOURNAL
In this work, the design and modeling of the solenoid inductor are discussed. The layout of integrated inductors with magnetic cores and their geometrical parameters are developed. The quality factor Q and inductance value L are derived from the S-parameters and plotted versus frequency. The effect of solenoid inductor geometry on inductance and quality factor are studied via simulation using MATLAB. The solenoid inductor geometry parameters considered are the turn’s number, the magnetic core length, the width of a magnetic core, the gap between turns, the magnetic core thickness, the coil thickness, and solenoid inductor oxide thickness. The performance of the proposed solenoid inductor integrated with FeNiCo is compared with other solenoid inductors.
Wireless power transfer using the concept of magnetic coil resonant systemTELKOMNIKA JOURNAL
Long life lithium ion batteries and methanol fuel cells have been persuaded as ways to make
the electrical components more mobile, consumers’ expectations are still far from being met due to
the added weight and expenses for battery replacement. The discovery of wireless power is transfered as
a new option, and holds great promise to leave the oversized battery. The design of wireless power
transfer applies the concept of magnetic coil resonant system (MCRS). The concept of MCRS is similar
with a function of an antenna to transfer the power from one point to another. Simulation process is used to
produce the output wave on the virtual oscilloscope and to obtain the reading of output voltage from
the multimeter. The transmitter side contains power supply, transmitter oscillator circuit and transmitter
magnetic coil. Transmitter circuit convert DC to AC waveform and the receiver circuit convert AC to DC
voltage. The DC Source that connected to transmitter was provided by the DC source regulator acts as DC
source to adjust voltage and current separately. The project show the efficiency of the wireless power
transfer with different coil diameter and a distance between the transmitter and receiver coil. At a distance
of 15 cm, power is successfully transmitted as it is indicated by the LED light to turn on. The increment of
size in coil diameter has given a higher power and longer coverage distance for wireless transfer power.
International Journal of Engineering Research and Applications (IJERA) is a team of researchers not publication services or private publications running the journals for monetary benefits, we are association of scientists and academia who focus only on supporting authors who want to publish their work. The articles published in our journal can be accessed online, all the articles will be archived for real time access.
Our journal system primarily aims to bring out the research talent and the works done by sciaentists, academia, engineers, practitioners, scholars, post graduate students of engineering and science. This journal aims to cover the scientific research in a broader sense and not publishing a niche area of research facilitating researchers from various verticals to publish their papers. It is also aimed to provide a platform for the researchers to publish in a shorter of time, enabling them to continue further All articles published are freely available to scientific researchers in the Government agencies,educators and the general public. We are taking serious efforts to promote our journal across the globe in various ways, we are sure that our journal will act as a scientific platform for all researchers to publish their works online.
Resonant-tunneling-diode effect in Si-based double-barrier structure sputtere...IJRES Journal
This paper presents the resonant-tunneling-diode (RTD) effect in a SiO2/n-Si/SiO2/p-Si double-barrier structural thin films fabricated using radio frequency (RF) magnetron sputtering at room temperature (300 K). The implementation of a circuit prototype is first accomplished by modulating a Si-based RTD with a solar-cell bias voltage. The important electrical properties of the peak current density and peak-to-valley current ratio (PVCR) are 184 nA/cm2 and 1.67, respectively. The connection between the two RTDs in series is biased by a solar cell. The value of the switching transition time is 24.37 μs; oscillation occurs with an operating frequency of 41.6 KHz. In semiconductor applications, the developed RTD is characterized by stability, enduring environmentally elevated temperature and relative humidity.
We present this work by two steps. In the first one, the new structure proposed of the FP-HEMTs device (Field plate High Electron Mobility Transistor) with a T-gate on an 4H-SIC substrate to optimize these electrical performances, multiple field-plates were used with aluminum oxide to split the single electric field peak into several smaller peaks, and as passivation works to reduce scaling leakage current. In the next, we include a modeling of a simulation in the Tcad-Silvaco Software for realizing the study of the influence of negative voltage applied to gate T-shaped in OFF state time and high power with ambient temperature, the performance differences between the 3FP and the SFP devices are discussed in detail.
A proposal and simulation analysis for a novel architecture of gate-all-aroun...IJECEIAES
A proposal for a novel gate-all-around (GAA) polycrystalline silicon nanowire (poly-SiNW) field effect transistor (FET) is presented and discussed in this paper. The device architecture is based on the realization of poly-SiNW in a V-shaped cavity obtained by tetra methyl ammonium hydroxide (TMAH) etch of monocrystalline silicon (100). The device’s behavior is simulated using Silvaco commercial software, including the density of states (DOS) model described by the double exponential distribution of acceptor trap density within the gap. The electric field, potential, and free electron concentration are analyzed in different nanowire regions to investigate the device's performance. The results show good performance despite the high density of deep states in poly-SiNW. This can be explained by the strong electric field caused by the corner effect in the nanowire, which favors the ionization of the acceptor traps and increases the free electron concentration.
TCAD Based Analysis of Gate Leakage Current for High-k Gate Stack MOSFETIDES Editor
Scaling of metal-oxide-semiconductor transistors
to smaller dimensions has been a key driving force in the IC
industry. This work analysis the gate leakage current behavior
of nano scale MOSFET based on TCAD simulation. The
Sentaurus Simulator simulates the high-k gate stack structure
of N-MOSFET for analysis purpose. The impact of interfacial
oxide thickness on the gate tunneling current has been
investigated as a function of gate voltages for a given equivalent
oxide thickness (EOT) of 1.0 nm. It was reported in the results
that interfacial oxide thickness plays an important role in
reducing the gate leakage current. It is also observed that high-
k stack gated MOSFET exhibits improved performance in term
of Off current and DIBL
Bibliometric analysis highlighting the role of women in addressing climate ch...IJECEIAES
Fossil fuel consumption increased quickly, contributing to climate change
that is evident in unusual flooding and draughts, and global warming. Over
the past ten years, women's involvement in society has grown dramatically,
and they succeeded in playing a noticeable role in reducing climate change.
A bibliometric analysis of data from the last ten years has been carried out to
examine the role of women in addressing the climate change. The analysis's
findings discussed the relevant to the sustainable development goals (SDGs),
particularly SDG 7 and SDG 13. The results considered contributions made
by women in the various sectors while taking geographic dispersion into
account. The bibliometric analysis delves into topics including women's
leadership in environmental groups, their involvement in policymaking, their
contributions to sustainable development projects, and the influence of
gender diversity on attempts to mitigate climate change. This study's results
highlight how women have influenced policies and actions related to climate
change, point out areas of research deficiency and recommendations on how
to increase role of the women in addressing the climate change and
achieving sustainability. To achieve more successful results, this initiative
aims to highlight the significance of gender equality and encourage
inclusivity in climate change decision-making processes.
Voltage and frequency control of microgrid in presence of micro-turbine inter...IJECEIAES
The active and reactive load changes have a significant impact on voltage
and frequency. In this paper, in order to stabilize the microgrid (MG) against
load variations in islanding mode, the active and reactive power of all
distributed generators (DGs), including energy storage (battery), diesel
generator, and micro-turbine, are controlled. The micro-turbine generator is
connected to MG through a three-phase to three-phase matrix converter, and
the droop control method is applied for controlling the voltage and
frequency of MG. In addition, a method is introduced for voltage and
frequency control of micro-turbines in the transition state from gridconnected mode to islanding mode. A novel switching strategy of the matrix
converter is used for converting the high-frequency output voltage of the
micro-turbine to the grid-side frequency of the utility system. Moreover,
using the switching strategy, the low-order harmonics in the output current
and voltage are not produced, and consequently, the size of the output filter
would be reduced. In fact, the suggested control strategy is load-independent
and has no frequency conversion restrictions. The proposed approach for
voltage and frequency regulation demonstrates exceptional performance and
favorable response across various load alteration scenarios. The suggested
strategy is examined in several scenarios in the MG test systems, and the
simulation results are addressed.
Enhancing battery system identification: nonlinear autoregressive modeling fo...IJECEIAES
Precisely characterizing Li-ion batteries is essential for optimizing their
performance, enhancing safety, and prolonging their lifespan across various
applications, such as electric vehicles and renewable energy systems. This
article introduces an innovative nonlinear methodology for system
identification of a Li-ion battery, employing a nonlinear autoregressive with
exogenous inputs (NARX) model. The proposed approach integrates the
benefits of nonlinear modeling with the adaptability of the NARX structure,
facilitating a more comprehensive representation of the intricate
electrochemical processes within the battery. Experimental data collected
from a Li-ion battery operating under diverse scenarios are employed to
validate the effectiveness of the proposed methodology. The identified
NARX model exhibits superior accuracy in predicting the battery's behavior
compared to traditional linear models. This study underscores the
importance of accounting for nonlinearities in battery modeling, providing
insights into the intricate relationships between state-of-charge, voltage, and
current under dynamic conditions.
Smart grid deployment: from a bibliometric analysis to a surveyIJECEIAES
Smart grids are one of the last decades' innovations in electrical energy.
They bring relevant advantages compared to the traditional grid and
significant interest from the research community. Assessing the field's
evolution is essential to propose guidelines for facing new and future smart
grid challenges. In addition, knowing the main technologies involved in the
deployment of smart grids (SGs) is important to highlight possible
shortcomings that can be mitigated by developing new tools. This paper
contributes to the research trends mentioned above by focusing on two
objectives. First, a bibliometric analysis is presented to give an overview of
the current research level about smart grid deployment. Second, a survey of
the main technological approaches used for smart grid implementation and
their contributions are highlighted. To that effect, we searched the Web of
Science (WoS), and the Scopus databases. We obtained 5,663 documents
from WoS and 7,215 from Scopus on smart grid implementation or
deployment. With the extraction limitation in the Scopus database, 5,872 of
the 7,215 documents were extracted using a multi-step process. These two
datasets have been analyzed using a bibliometric tool called bibliometrix.
The main outputs are presented with some recommendations for future
research.
Use of analytical hierarchy process for selecting and prioritizing islanding ...IJECEIAES
One of the problems that are associated to power systems is islanding
condition, which must be rapidly and properly detected to prevent any
negative consequences on the system's protection, stability, and security.
This paper offers a thorough overview of several islanding detection
strategies, which are divided into two categories: classic approaches,
including local and remote approaches, and modern techniques, including
techniques based on signal processing and computational intelligence.
Additionally, each approach is compared and assessed based on several
factors, including implementation costs, non-detected zones, declining
power quality, and response times using the analytical hierarchy process
(AHP). The multi-criteria decision-making analysis shows that the overall
weight of passive methods (24.7%), active methods (7.8%), hybrid methods
(5.6%), remote methods (14.5%), signal processing-based methods (26.6%),
and computational intelligent-based methods (20.8%) based on the
comparison of all criteria together. Thus, it can be seen from the total weight
that hybrid approaches are the least suitable to be chosen, while signal
processing-based methods are the most appropriate islanding detection
method to be selected and implemented in power system with respect to the
aforementioned factors. Using Expert Choice software, the proposed
hierarchy model is studied and examined.
Enhancing of single-stage grid-connected photovoltaic system using fuzzy logi...IJECEIAES
The power generated by photovoltaic (PV) systems is influenced by
environmental factors. This variability hampers the control and utilization of
solar cells' peak output. In this study, a single-stage grid-connected PV
system is designed to enhance power quality. Our approach employs fuzzy
logic in the direct power control (DPC) of a three-phase voltage source
inverter (VSI), enabling seamless integration of the PV connected to the
grid. Additionally, a fuzzy logic-based maximum power point tracking
(MPPT) controller is adopted, which outperforms traditional methods like
incremental conductance (INC) in enhancing solar cell efficiency and
minimizing the response time. Moreover, the inverter's real-time active and
reactive power is directly managed to achieve a unity power factor (UPF).
The system's performance is assessed through MATLAB/Simulink
implementation, showing marked improvement over conventional methods,
particularly in steady-state and varying weather conditions. For solar
irradiances of 500 and 1,000 W/m2
, the results show that the proposed
method reduces the total harmonic distortion (THD) of the injected current
to the grid by approximately 46% and 38% compared to conventional
methods, respectively. Furthermore, we compare the simulation results with
IEEE standards to evaluate the system's grid compatibility.
Enhancing photovoltaic system maximum power point tracking with fuzzy logic-b...IJECEIAES
Photovoltaic systems have emerged as a promising energy resource that
caters to the future needs of society, owing to their renewable, inexhaustible,
and cost-free nature. The power output of these systems relies on solar cell
radiation and temperature. In order to mitigate the dependence on
atmospheric conditions and enhance power tracking, a conventional
approach has been improved by integrating various methods. To optimize
the generation of electricity from solar systems, the maximum power point
tracking (MPPT) technique is employed. To overcome limitations such as
steady-state voltage oscillations and improve transient response, two
traditional MPPT methods, namely fuzzy logic controller (FLC) and perturb
and observe (P&O), have been modified. This research paper aims to
simulate and validate the step size of the proposed modified P&O and FLC
techniques within the MPPT algorithm using MATLAB/Simulink for
efficient power tracking in photovoltaic systems.
Adaptive synchronous sliding control for a robot manipulator based on neural ...IJECEIAES
Robot manipulators have become important equipment in production lines, medical fields, and transportation. Improving the quality of trajectory tracking for
robot hands is always an attractive topic in the research community. This is a
challenging problem because robot manipulators are complex nonlinear systems
and are often subject to fluctuations in loads and external disturbances. This
article proposes an adaptive synchronous sliding control scheme to improve trajectory tracking performance for a robot manipulator. The proposed controller
ensures that the positions of the joints track the desired trajectory, synchronize
the errors, and significantly reduces chattering. First, the synchronous tracking
errors and synchronous sliding surfaces are presented. Second, the synchronous
tracking error dynamics are determined. Third, a robust adaptive control law is
designed,the unknown components of the model are estimated online by the neural network, and the parameters of the switching elements are selected by fuzzy
logic. The built algorithm ensures that the tracking and approximation errors
are ultimately uniformly bounded (UUB). Finally, the effectiveness of the constructed algorithm is demonstrated through simulation and experimental results.
Simulation and experimental results show that the proposed controller is effective with small synchronous tracking errors, and the chattering phenomenon is
significantly reduced.
Remote field-programmable gate array laboratory for signal acquisition and de...IJECEIAES
A remote laboratory utilizing field-programmable gate array (FPGA) technologies enhances students’ learning experience anywhere and anytime in embedded system design. Existing remote laboratories prioritize hardware access and visual feedback for observing board behavior after programming, neglecting comprehensive debugging tools to resolve errors that require internal signal acquisition. This paper proposes a novel remote embeddedsystem design approach targeting FPGA technologies that are fully interactive via a web-based platform. Our solution provides FPGA board access and debugging capabilities beyond the visual feedback provided by existing remote laboratories. We implemented a lab module that allows users to seamlessly incorporate into their FPGA design. The module minimizes hardware resource utilization while enabling the acquisition of a large number of data samples from the signal during the experiments by adaptively compressing the signal prior to data transmission. The results demonstrate an average compression ratio of 2.90 across three benchmark signals, indicating efficient signal acquisition and effective debugging and analysis. This method allows users to acquire more data samples than conventional methods. The proposed lab allows students to remotely test and debug their designs, bridging the gap between theory and practice in embedded system design.
Detecting and resolving feature envy through automated machine learning and m...IJECEIAES
Efficiently identifying and resolving code smells enhances software project quality. This paper presents a novel solution, utilizing automated machine learning (AutoML) techniques, to detect code smells and apply move method refactoring. By evaluating code metrics before and after refactoring, we assessed its impact on coupling, complexity, and cohesion. Key contributions of this research include a unique dataset for code smell classification and the development of models using AutoGluon for optimal performance. Furthermore, the study identifies the top 20 influential features in classifying feature envy, a well-known code smell, stemming from excessive reliance on external classes. We also explored how move method refactoring addresses feature envy, revealing reduced coupling and complexity, and improved cohesion, ultimately enhancing code quality. In summary, this research offers an empirical, data-driven approach, integrating AutoML and move method refactoring to optimize software project quality. Insights gained shed light on the benefits of refactoring on code quality and the significance of specific features in detecting feature envy. Future research can expand to explore additional refactoring techniques and a broader range of code metrics, advancing software engineering practices and standards.
Smart monitoring technique for solar cell systems using internet of things ba...IJECEIAES
Rapidly and remotely monitoring and receiving the solar cell systems status parameters, solar irradiance, temperature, and humidity, are critical issues in enhancement their efficiency. Hence, in the present article an improved smart prototype of internet of things (IoT) technique based on embedded system through NodeMCU ESP8266 (ESP-12E) was carried out experimentally. Three different regions at Egypt; Luxor, Cairo, and El-Beheira cities were chosen to study their solar irradiance profile, temperature, and humidity by the proposed IoT system. The monitoring data of solar irradiance, temperature, and humidity were live visualized directly by Ubidots through hypertext transfer protocol (HTTP) protocol. The measured solar power radiation in Luxor, Cairo, and El-Beheira ranged between 216-1000, 245-958, and 187-692 W/m 2 respectively during the solar day. The accuracy and rapidity of obtaining monitoring results using the proposed IoT system made it a strong candidate for application in monitoring solar cell systems. On the other hand, the obtained solar power radiation results of the three considered regions strongly candidate Luxor and Cairo as suitable places to build up a solar cells system station rather than El-Beheira.
An efficient security framework for intrusion detection and prevention in int...IJECEIAES
Over the past few years, the internet of things (IoT) has advanced to connect billions of smart devices to improve quality of life. However, anomalies or malicious intrusions pose several security loopholes, leading to performance degradation and threat to data security in IoT operations. Thereby, IoT security systems must keep an eye on and restrict unwanted events from occurring in the IoT network. Recently, various technical solutions based on machine learning (ML) models have been derived towards identifying and restricting unwanted events in IoT. However, most ML-based approaches are prone to miss-classification due to inappropriate feature selection. Additionally, most ML approaches applied to intrusion detection and prevention consider supervised learning, which requires a large amount of labeled data to be trained. Consequently, such complex datasets are impossible to source in a large network like IoT. To address this problem, this proposed study introduces an efficient learning mechanism to strengthen the IoT security aspects. The proposed algorithm incorporates supervised and unsupervised approaches to improve the learning models for intrusion detection and mitigation. Compared with the related works, the experimental outcome shows that the model performs well in a benchmark dataset. It accomplishes an improved detection accuracy of approximately 99.21%.
Developing a smart system for infant incubators using the internet of things ...IJECEIAES
This research is developing an incubator system that integrates the internet of things and artificial intelligence to improve care for premature babies. The system workflow starts with sensors that collect data from the incubator. Then, the data is sent in real-time to the internet of things (IoT) broker eclipse mosquito using the message queue telemetry transport (MQTT) protocol version 5.0. After that, the data is stored in a database for analysis using the long short-term memory network (LSTM) method and displayed in a web application using an application programming interface (API) service. Furthermore, the experimental results produce as many as 2,880 rows of data stored in the database. The correlation coefficient between the target attribute and other attributes ranges from 0.23 to 0.48. Next, several experiments were conducted to evaluate the model-predicted value on the test data. The best results are obtained using a two-layer LSTM configuration model, each with 60 neurons and a lookback setting 6. This model produces an R 2 value of 0.934, with a root mean square error (RMSE) value of 0.015 and a mean absolute error (MAE) of 0.008. In addition, the R 2 value was also evaluated for each attribute used as input, with a result of values between 0.590 and 0.845.
A review on internet of things-based stingless bee's honey production with im...IJECEIAES
Honey is produced exclusively by honeybees and stingless bees which both are well adapted to tropical and subtropical regions such as Malaysia. Stingless bees are known for producing small amounts of honey and are known for having a unique flavor profile. Problem identified that many stingless bees collapsed due to weather, temperature and environment. It is critical to understand the relationship between the production of stingless bee honey and environmental conditions to improve honey production. Thus, this paper presents a review on stingless bee's honey production and prediction modeling. About 54 previous research has been analyzed and compared in identifying the research gaps. A framework on modeling the prediction of stingless bee honey is derived. The result presents the comparison and analysis on the internet of things (IoT) monitoring systems, honey production estimation, convolution neural networks (CNNs), and automatic identification methods on bee species. It is identified based on image detection method the top best three efficiency presents CNN is at 98.67%, densely connected convolutional networks with YOLO v3 is 97.7%, and DenseNet201 convolutional networks 99.81%. This study is significant to assist the researcher in developing a model for predicting stingless honey produced by bee's output, which is important for a stable economy and food security.
A trust based secure access control using authentication mechanism for intero...IJECEIAES
The internet of things (IoT) is a revolutionary innovation in many aspects of our society including interactions, financial activity, and global security such as the military and battlefield internet. Due to the limited energy and processing capacity of network devices, security, energy consumption, compatibility, and device heterogeneity are the long-term IoT problems. As a result, energy and security are critical for data transmission across edge and IoT networks. Existing IoT interoperability techniques need more computation time, have unreliable authentication mechanisms that break easily, lose data easily, and have low confidentiality. In this paper, a key agreement protocol-based authentication mechanism for IoT devices is offered as a solution to this issue. This system makes use of information exchange, which must be secured to prevent access by unauthorized users. Using a compact contiki/cooja simulator, the performance and design of the suggested framework are validated. The simulation findings are evaluated based on detection of malicious nodes after 60 minutes of simulation. The suggested trust method, which is based on privacy access control, reduced packet loss ratio to 0.32%, consumed 0.39% power, and had the greatest average residual energy of 0.99 mJoules at 10 nodes.
Fuzzy linear programming with the intuitionistic polygonal fuzzy numbersIJECEIAES
In real world applications, data are subject to ambiguity due to several factors; fuzzy sets and fuzzy numbers propose a great tool to model such ambiguity. In case of hesitation, the complement of a membership value in fuzzy numbers can be different from the non-membership value, in which case we can model using intuitionistic fuzzy numbers as they provide flexibility by defining both a membership and a non-membership functions. In this article, we consider the intuitionistic fuzzy linear programming problem with intuitionistic polygonal fuzzy numbers, which is a generalization of the previous polygonal fuzzy numbers found in the literature. We present a modification of the simplex method that can be used to solve any general intuitionistic fuzzy linear programming problem after approximating the problem by an intuitionistic polygonal fuzzy number with n edges. This method is given in a simple tableau formulation, and then applied on numerical examples for clarity.
The performance of artificial intelligence in prostate magnetic resonance im...IJECEIAES
Prostate cancer is the predominant form of cancer observed in men worldwide. The application of magnetic resonance imaging (MRI) as a guidance tool for conducting biopsies has been established as a reliable and well-established approach in the diagnosis of prostate cancer. The diagnostic performance of MRI-guided prostate cancer diagnosis exhibits significant heterogeneity due to the intricate and multi-step nature of the diagnostic pathway. The development of artificial intelligence (AI) models, specifically through the utilization of machine learning techniques such as deep learning, is assuming an increasingly significant role in the field of radiology. In the realm of prostate MRI, a considerable body of literature has been dedicated to the development of various AI algorithms. These algorithms have been specifically designed for tasks such as prostate segmentation, lesion identification, and classification. The overarching objective of these endeavors is to enhance diagnostic performance and foster greater agreement among different observers within MRI scans for the prostate. This review article aims to provide a concise overview of the application of AI in the field of radiology, with a specific focus on its utilization in prostate MRI.
Seizure stage detection of epileptic seizure using convolutional neural networksIJECEIAES
According to the World Health Organization (WHO), seventy million individuals worldwide suffer from epilepsy, a neurological disorder. While electroencephalography (EEG) is crucial for diagnosing epilepsy and monitoring the brain activity of epilepsy patients, it requires a specialist to examine all EEG recordings to find epileptic behavior. This procedure needs an experienced doctor, and a precise epilepsy diagnosis is crucial for appropriate treatment. To identify epileptic seizures, this study employed a convolutional neural network (CNN) based on raw scalp EEG signals to discriminate between preictal, ictal, postictal, and interictal segments. The possibility of these characteristics is explored by examining how well timedomain signals work in the detection of epileptic signals using intracranial Freiburg Hospital (FH), scalp Children's Hospital Boston-Massachusetts Institute of Technology (CHB-MIT) databases, and Temple University Hospital (TUH) EEG. To test the viability of this approach, two types of experiments were carried out. Firstly, binary class classification (preictal, ictal, postictal each versus interictal) and four-class classification (interictal versus preictal versus ictal versus postictal). The average accuracy for stage detection using CHB-MIT database was 84.4%, while the Freiburg database's time-domain signals had an accuracy of 79.7% and the highest accuracy of 94.02% for classification in the TUH EEG database when comparing interictal stage to preictal stage.
Analysis of driving style using self-organizing maps to analyze driver behaviorIJECEIAES
Modern life is strongly associated with the use of cars, but the increase in acceleration speeds and their maneuverability leads to a dangerous driving style for some drivers. In these conditions, the development of a method that allows you to track the behavior of the driver is relevant. The article provides an overview of existing methods and models for assessing the functioning of motor vehicles and driver behavior. Based on this, a combined algorithm for recognizing driving style is proposed. To do this, a set of input data was formed, including 20 descriptive features: About the environment, the driver's behavior and the characteristics of the functioning of the car, collected using OBD II. The generated data set is sent to the Kohonen network, where clustering is performed according to driving style and degree of danger. Getting the driving characteristics into a particular cluster allows you to switch to the private indicators of an individual driver and considering individual driving characteristics. The application of the method allows you to identify potentially dangerous driving styles that can prevent accidents.
Hyperspectral object classification using hybrid spectral-spatial fusion and ...IJECEIAES
Because of its spectral-spatial and temporal resolution of greater areas, hyperspectral imaging (HSI) has found widespread application in the field of object classification. The HSI is typically used to accurately determine an object's physical characteristics as well as to locate related objects with appropriate spectral fingerprints. As a result, the HSI has been extensively applied to object identification in several fields, including surveillance, agricultural monitoring, environmental research, and precision agriculture. However, because of their enormous size, objects require a lot of time to classify; for this reason, both spectral and spatial feature fusion have been completed. The existing classification strategy leads to increased misclassification, and the feature fusion method is unable to preserve semantic object inherent features; This study addresses the research difficulties by introducing a hybrid spectral-spatial fusion (HSSF) technique to minimize feature size while maintaining object intrinsic qualities; Lastly, a soft-margins kernel is proposed for multi-layer deep support vector machine (MLDSVM) to reduce misclassification. The standard Indian pines dataset is used for the experiment, and the outcome demonstrates that the HSSF-MLDSVM model performs substantially better in terms of accuracy and Kappa coefficient.
Sachpazis:Terzaghi Bearing Capacity Estimation in simple terms with Calculati...Dr.Costas Sachpazis
Terzaghi's soil bearing capacity theory, developed by Karl Terzaghi, is a fundamental principle in geotechnical engineering used to determine the bearing capacity of shallow foundations. This theory provides a method to calculate the ultimate bearing capacity of soil, which is the maximum load per unit area that the soil can support without undergoing shear failure. The Calculation HTML Code included.
TECHNICAL TRAINING MANUAL GENERAL FAMILIARIZATION COURSEDuvanRamosGarzon1
AIRCRAFT GENERAL
The Single Aisle is the most advanced family aircraft in service today, with fly-by-wire flight controls.
The A318, A319, A320 and A321 are twin-engine subsonic medium range aircraft.
The family offers a choice of engines
Final project report on grocery store management system..pdfKamal Acharya
In today’s fast-changing business environment, it’s extremely important to be able to respond to client needs in the most effective and timely manner. If your customers wish to see your business online and have instant access to your products or services.
Online Grocery Store is an e-commerce website, which retails various grocery products. This project allows viewing various products available enables registered users to purchase desired products instantly using Paytm, UPI payment processor (Instant Pay) and also can place order by using Cash on Delivery (Pay Later) option. This project provides an easy access to Administrators and Managers to view orders placed using Pay Later and Instant Pay options.
In order to develop an e-commerce website, a number of Technologies must be studied and understood. These include multi-tiered architecture, server and client-side scripting techniques, implementation technologies, programming language (such as PHP, HTML, CSS, JavaScript) and MySQL relational databases. This is a project with the objective to develop a basic website where a consumer is provided with a shopping cart website and also to know about the technologies used to develop such a website.
This document will discuss each of the underlying technologies to create and implement an e- commerce website.
Hybrid optimization of pumped hydro system and solar- Engr. Abdul-Azeez.pdffxintegritypublishin
Advancements in technology unveil a myriad of electrical and electronic breakthroughs geared towards efficiently harnessing limited resources to meet human energy demands. The optimization of hybrid solar PV panels and pumped hydro energy supply systems plays a pivotal role in utilizing natural resources effectively. This initiative not only benefits humanity but also fosters environmental sustainability. The study investigated the design optimization of these hybrid systems, focusing on understanding solar radiation patterns, identifying geographical influences on solar radiation, formulating a mathematical model for system optimization, and determining the optimal configuration of PV panels and pumped hydro storage. Through a comparative analysis approach and eight weeks of data collection, the study addressed key research questions related to solar radiation patterns and optimal system design. The findings highlighted regions with heightened solar radiation levels, showcasing substantial potential for power generation and emphasizing the system's efficiency. Optimizing system design significantly boosted power generation, promoted renewable energy utilization, and enhanced energy storage capacity. The study underscored the benefits of optimizing hybrid solar PV panels and pumped hydro energy supply systems for sustainable energy usage. Optimizing the design of solar PV panels and pumped hydro energy supply systems as examined across diverse climatic conditions in a developing country, not only enhances power generation but also improves the integration of renewable energy sources and boosts energy storage capacities, particularly beneficial for less economically prosperous regions. Additionally, the study provides valuable insights for advancing energy research in economically viable areas. Recommendations included conducting site-specific assessments, utilizing advanced modeling tools, implementing regular maintenance protocols, and enhancing communication among system components.
About
Indigenized remote control interface card suitable for MAFI system CCR equipment. Compatible for IDM8000 CCR. Backplane mounted serial and TCP/Ethernet communication module for CCR remote access. IDM 8000 CCR remote control on serial and TCP protocol.
• Remote control: Parallel or serial interface.
• Compatible with MAFI CCR system.
• Compatible with IDM8000 CCR.
• Compatible with Backplane mount serial communication.
• Compatible with commercial and Defence aviation CCR system.
• Remote control system for accessing CCR and allied system over serial or TCP.
• Indigenized local Support/presence in India.
• Easy in configuration using DIP switches.
Technical Specifications
Indigenized remote control interface card suitable for MAFI system CCR equipment. Compatible for IDM8000 CCR. Backplane mounted serial and TCP/Ethernet communication module for CCR remote access. IDM 8000 CCR remote control on serial and TCP protocol.
Key Features
Indigenized remote control interface card suitable for MAFI system CCR equipment. Compatible for IDM8000 CCR. Backplane mounted serial and TCP/Ethernet communication module for CCR remote access. IDM 8000 CCR remote control on serial and TCP protocol.
• Remote control: Parallel or serial interface
• Compatible with MAFI CCR system
• Copatiable with IDM8000 CCR
• Compatible with Backplane mount serial communication.
• Compatible with commercial and Defence aviation CCR system.
• Remote control system for accessing CCR and allied system over serial or TCP.
• Indigenized local Support/presence in India.
Application
• Remote control: Parallel or serial interface.
• Compatible with MAFI CCR system.
• Compatible with IDM8000 CCR.
• Compatible with Backplane mount serial communication.
• Compatible with commercial and Defence aviation CCR system.
• Remote control system for accessing CCR and allied system over serial or TCP.
• Indigenized local Support/presence in India.
• Easy in configuration using DIP switches.
Explore the innovative world of trenchless pipe repair with our comprehensive guide, "The Benefits and Techniques of Trenchless Pipe Repair." This document delves into the modern methods of repairing underground pipes without the need for extensive excavation, highlighting the numerous advantages and the latest techniques used in the industry.
Learn about the cost savings, reduced environmental impact, and minimal disruption associated with trenchless technology. Discover detailed explanations of popular techniques such as pipe bursting, cured-in-place pipe (CIPP) lining, and directional drilling. Understand how these methods can be applied to various types of infrastructure, from residential plumbing to large-scale municipal systems.
Ideal for homeowners, contractors, engineers, and anyone interested in modern plumbing solutions, this guide provides valuable insights into why trenchless pipe repair is becoming the preferred choice for pipe rehabilitation. Stay informed about the latest advancements and best practices in the field.
Vaccine management system project report documentation..pdfKamal Acharya
The Division of Vaccine and Immunization is facing increasing difficulty monitoring vaccines and other commodities distribution once they have been distributed from the national stores. With the introduction of new vaccines, more challenges have been anticipated with this additions posing serious threat to the already over strained vaccine supply chain system in Kenya.
Overview of the fundamental roles in Hydropower generation and the components involved in wider Electrical Engineering.
This paper presents the design and construction of hydroelectric dams from the hydrologist’s survey of the valley before construction, all aspects and involved disciplines, fluid dynamics, structural engineering, generation and mains frequency regulation to the very transmission of power through the network in the United Kingdom.
Author: Robbie Edward Sayers
Collaborators and co editors: Charlie Sims and Connor Healey.
(C) 2024 Robbie E. Sayers
Water scarcity is the lack of fresh water resources to meet the standard water demand. There are two type of water scarcity. One is physical. The other is economic water scarcity.
Simulation and Modeling of Silicon Based Single Electron Transistor
1. International Journal of Electrical and Computer Engineering (IJECE)
Vol. 8, No. 2, April 2018, pp. 900 – 907
ISSN: 2088-8708 900
Institute of Advanced Engineering and Science
w w w . i a e s j o u r n a l . c o m
Simulation and Modeling of Silicon Based Single Electron
Transistor
Malik Ashter Mehdy, Mariagrazia Graziano, and Gianluca Piccinini
Department of Electronics and Telecommunications, Politecnico di Torino, Italy
Article Info
Article history:
Received: Jul 29, 2017
Revised: Dec 29, 2017
Accepted: Jan 27, 2018
Keyword:
Single Electron Transistor
TCAD Simulations
NEGF
Coulomb Blockade
Transmission Spectrum
ABSTRACT
In this work, we simulated and modeled silicon quantum dot based single electron transistor
(SET). We simulated the device using non-equilibrium Green’s function (NEGF) formal-
ism in transport direction coupled with Schrodinger equation in transverse directions. The
characteristics of SET such as Coulomb blockade and Coulomb diamonds were observed.
We also present a new efficient model to calculate the current voltage (IV) characteristics
of the SET. The IV characteristic achieved from the model are very similar to those from
simulations both in shape and magnitude. The proposed model is capable of reproducing
the Coulomb diamond diagram in good agreement with the simulations. The model, which
is based on transmission spectrum, is simple, efficient and provides insights on the physics
of the device. The transmission spectrum at equilibrium is achieved from simulations and
given as input to the model. The model then calculates the evolved transmission spectra at
non-equilibrium conditions and evaluates the current using Landauers formula.
Copyright c 2018 Institute of Advanced Engineering and Science.
All rights reserved.
Corresponding Author:
Malik Ashter Mehdy
Department of Electronics and Telecommunications
Politecnico di Torino,
corso Duca degli Abruzzi, 24, Torino, Italy
malik.mehdy@polito.it
1. INTRODUCTION
The CMOS technology is at the verge of the miniaturization and it needs to be replaced by the new tech-
nologies which should overcome its limitations. One of the most promising technologies is the one based on single
electron tunneling phenomenon. If a metallic or semiconducting island is placed between the electrodes separated by
the tunnel junctions with very small capacitance, the single electron phenomenon can be observed. When an electron
tunnels into the island it raises the electrostatic potential of island stopping the tunneling of the following electrons
until external potential is applied. This phenomenon is also known as Coulomb blockade. If the island size is very
small (so that the capacitance is very small), tunneling of single electrons can be controlled by the external electrode
potentials. Hence the devices based on single electron phenomenon have the attributes of small size and low power
consumption.
Over the years, many different schemes for digital logic using single electron transistor have been presented
[1–5]. In one scheme, the logic states are represented by the single electrons located at tiny metallic electrodes [1].
While such a scheme can provide the huge benefits in terms of high speed and very low power consumption, its
practical implementation faces serious challenges. Firstly, they should be operated at temperature much less than the
critical temperature, otherwise a thermally induced tunneling event can change the entire calculation. Secondly, the
output of one logic gate (single electron) should be capable of charging the input of following gates. This requires
the stray capacitance of interconnections to be kept negligible and complicated design rules for different number of
subsequent gates [2].
The devices based on silicon are very important part of the today’s digital world [6–8]. Single electron
transistors (SET) based on silicon have been previously studied in [9–11]. In order to operate the transistor at room
temperature, the size of the island should be less than 5nm [12]. The nano-lithography techniques now a days allow
to define such small structures with only a few variations. In this work, we simulate and model the SET based on
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w w w . i a e s j o u r n a l . c o m
, DOI: 10.11591/ijece.v8i2.pp900-907
2. IJECE ISSN: 2088-8708 901
a)
Height
Width
Length
b)
Contact Contact
Silicon
Insulator
Air
Si Island
Tunnel
Junction
Tunnel
Junction
Figure 1. a) The three-dimensional structure of the device which is simulated in Atlas TCAD b) Cross section of the
same device as seen from the sides. Different materials and the dimensional parameters are highlighted and drain and
source contacts are mentioned. The gate contact is all around the device.
silicon quantum dot with a size of 1nm. We present two novel contributions in this work. i) We simulate Si based SET,
for the first time, using Atlas TCAD [13] with non-equilibrium Green’s function (NEGF) technique. The results are
comparable to the experimental results with similar devices. NEGF formalism is a robust technique for the quantum
level simulations. Anantram et. al used NEGF technique to model nanodevices [14]. The transport through quantum
dot weakly coupled with the contacts is studied using NEGF technique in [15]. ii) We propose transmission spectrum
based model for the evaluation of SET characteristics. The proposed model, which is the extended version of [16],
uses transmission spectrum to calculate the current. It does not need any complex initial set up and is very efficient,
simple, sufficiently accurate and flexible to implement in different conditions. In comparison, Monte Carlo based
models [17] are accurate but very time consuming. Macromodeling based models [18] [19] are efficient but provide a
little physical insights on the device behavior. Analytical models based on physics [20] and master equation [21] solve
this problem but they still require a complex procedure to calculate tunnel junction resistances and capacitances [22].
These models require the tunnel junction resistances and capacitances as input while the proposed model requires
transmission spectrum as input. The transmission spectrum provides insights on the physics of device especially about
the density of states of island which lacks in case of other models. We can easily change the model for the variations
in contact coupling, gate coupling and density of state variations due to different fabricated size of island. From the
transmission spectrum current is calculated using Landauers formula. The rest of the paper is organized as follows. In
section II the explanation of the device and simulations are described. In section III the details of proposed model are
given. In section IV the results are discussed and the section V concludes the paper.
2. RESEARCH METHODOLOGY
We simulated the single electron transistor (SET) based on silicon island and the drain and source contacts
made of highly doped silicon (Fig. 1). The cross section of the island (height into width) is 1x1nm and the length is
2nm. The tunnel junctions are created by the gap between the island and contacts. These gaps provide the confinement
in the transport direction and decouple the island from electrodes. The silicon island is warped by the oxide through
which gate contact controls the conduction in the island. The device works as the single electron transistor and shows
the characteristics of SET such as Coulomb diamonds as shown in results section. We simulated the device in Atlas
TCAD using non-equilibrium Green’s function (NEGF) formalism in transport direction coupled with Schrodinger
equation in transverse direction. The simulator uses mode space technique instead of solving 2d or 3d problem.
First solving the Schrodinger equation eigenvalues and eigen vectors are calculated in each slice of device. Then a
transport equation is solved for electrons moving in lowest sub-bands which are occupied. This reduces the size of
the problem [13]. But still the simulations are very time consuming and there is a need for an efficient model. From
the simulations, we can achieve the transmission spectrum (TS) at equilibrium which is fed to the model to compute
the IV characteristics. The IV characteristics are also calculated from the simulations to compare with those from the
model.
Simulation and Modeling of Silicon Based Single ... (Malik Ashter Mehdy)
3. 902 ISSN: 2088-8708
Figure 2. The flow chart of the model: at equilibrium, the transmission spectrum is constructed using parameters from
simulations, while at non-equilibrium conditions, shift is calculated by the self-consistent loop.
3. THE PROPOSED MODEL
The proposed model uses transmission spectrum (TS) to calculate the characteristics of single electron tran-
sistors. In our previous works, we have implemented earlier versions of the model to molecular devices [23] and
silicon nanocrystals [16]. The current model is implemented on SET and the difference from [23] is the implemen-
tation of two spectra for different spin as explained in [16]. In this work, we extend the model presented in [16] to
implement the gate voltage in order to use the silicon nanocrystal as SET. Further explanation on the modeling of gate
voltage can be found in the following description and in the results section. The model takes as input the transmission
spectrum at equilibrium from the simulations. From the transmission spectrum, current is calculated using Landauers
formula. The evolution in transmission spectrum with applied voltage is calculated by the model using self-consistent
field technique. By evaluating the TS at all voltages (Vds, Vg) and using the Landauers formula, IV characteristics of
the device can be calculated [24].
We calculate the TS at equilibrium using Atlas TCAD. The TS parameters i.e. position, amplitude and width
of peaks are given as input to the model. The model uses these parameters to construct the TS at equilibrium. The
shape of the peaks is defined by the Lorentzian function.
D0 = k0 × Norm(
γ1γ2
(E − )2 + γ2
) (1)
Here D0 is the transmission peak defined over the range of energies E, is the position of the corresponding peak and
γ is the sum of drain and source rate constants γ1,γ2. The width (or broadening) of the transmission peaks is defined
by γ. After normalizing the Lorentzian function, it is multiplied by the amplitude of the corresponding peak k0. Other
peaks are calculated similarly and then TS is constructed by adding all the transmission peaks. The same procedure is
repeated for both spins and two spectra are achieved. Although at this point both the spectra are similar, the difference
arises when the shift in spectra is calculated as explained below.
When the voltage is applied, transmission spectrum shifts on the energy axis. The shift is caused by the
external potential and because of the change in number of electrons. At equilibrium, the Fermi level of island is
IJECE Vol. 8, No. 2, April 2018: 900 – 907
4. IJECE ISSN: 2088-8708 903
aligned with the drain and source chemical potential. When the drain to source voltage (Vds) is applied the drain
and source chemical potential split and the separation is so called bias window. If there is a transmission peak inside
or at the edge of the bias window then the number of electrons (N) at the island change. If the transmission peak
corresponds to the spin up electrons the change in number of electrons are calculated using following formula.
NUP/DN =
γ1f1UP/DN ( ) + γ2f2UP/DN ( )
γ1 + γ2
(2)
Here f1UP/DN ( ) and f2UP/DN ( ) are the drain and source Fermi functions with respect to the corresponding spin
up/down transmission peaks ( ) If the number of electrons increase in the island the energy of the system increases
so the transmission spectrum shifts towards higher energies and vice versa. The overall shift is the result of both i.e.
change in number of electrons and the applied drain to source bias. The positive gate voltage lowers the energy of the
island so it shifts the transmission spectrum towards low energies. The overall shift (U) can be calculated using:
UUP/DN = UL + U0∆NDN/UP (3)
where U0 is the single electron charging energy, ∆NDN/UP is the change in number of spin down/up electrons and
UL = αdVds + αgVg is Laplace potential. The effect of the external voltages is modeled by the coupling coefficients
αd, αg. Equation 2 and 3 are solved self-consistently to calculate the shift in transmission spectrum with respect to
the applied voltage. The shift in both the spectra for spin up and spin down is calculated. The shift in the spin up
transmission spectrum is calculated from the change in number of spin down electrons as spin up electron feels the
potential due to spin down electron and vice versa [24].
When a positive gate voltage is applied and a lowest unoccupied molecular level (LUMO) goes below the
drain and source chemical potentials, the number of electrons increase on the island. This increase in number of
electrons causes the rate constant (γ) to decrease so the width of the transmission peaks also reduces. In the current
version of the model, the change in width is calculated using fitting parameters. Another effect of the increase in
number of electrons on the island is to reduce the gate coupling (αg). With the increase in number of electrons on
the island the amount of shift in transmission spectra due to increase in gate voltage reduces. We implement this
-2 -1 0 1 2 3
Energy (eV)
0
1
2
3
Model
Simulations
-2 -1 0 1 2 3
0
1
2
3
Model
Simulations
(b)
-2 -1 0 1 2 3
Energy (eV)
0
1
2
3
Model
Simulations
-2 -1 0 1 2 3
Energy (eV)
0
1
2
3
Model
Simulations
Tranmission
-2 -1 0 1 2 3
Energy (eV)
0
1
2
3
Model
Simulations
(a)
(d)
(c)
Ef=0
HOMO-LUMO Gap
(e)
Figure 3. Transmission spectra at different Vg and Vds achieved from simulations and model. The bias window is
shown as the dashed lines. a) Vg = 0.0V , Vds = 0.0V b) Vg = 1.0V , Vds = 0.0V c) Vg = 1.0V , Vds = 1.0V d)
Vg = 1.5V , Vds = 1.0V e) Vg = 2.5V , Vds = 1.0V .
Simulation and Modeling of Silicon Based Single ... (Malik Ashter Mehdy)
5. 904 ISSN: 2088-8708
effect in the model by linear fitting of αg with respect to the change in number of electrons (N). After evaluating the
transmission spectra evolved with the applied voltage we can find the current using Landauers formula.
IUP/DN =
q2
h
+∞
−∞
TUP/DN (E)[f1(E) − f2(E)]dE (4)
Here q is the electron charge, h is plank’s constant and T(E) is the transmission spectrum. The difference between
the source and drain Fermi functions models the effect of bias window so that only the part of transmission spectrum
which is inside the bias window is integrated. The total current is calculated by the sum of spin up and spin down
currents.
4. RESULTS AND DISCUSSION
Single electron transistor based on silicon quantum dot of 1nm cross section was simulated in Atlas TCAD
using NEGF formalism coupled with Schrodinger equation. The IV characteristics of the device were calculated from
simulations as well as from the model. In Fig. 3 the transmission spectra (TS) from simulations and model are shown
for different values of Vg and Vds. The lowest unoccupied molecular levels (LUMO) are shown while the highest
occupied molecular levels (HOMO) are not shown because they do not contribute to the conduction in this case as
they are far below the Fermi energy level (Ef = 0). The HOMO-LUMO gap and the Fermi energy level are also
mentioned in the Fig. 3 (a). The LUMO levels are relatively closer to Fermi level and by applying a positive gate
voltage we can shift them near Fermi level (Fig. 3 (b)). Then at a small value of Vds LUMO1 enters inside the bias
window and contributes to current (Fig. 3 (c,d,e)).
The comparison between the IV characteristics is shown in the Fig. 4. Drain current is plotted as a function
of drain to source bias for different values of gate voltage. At low gate voltages (i.e. less than 1 V) there are no
transmission peaks inside the bias window so a very small current flows through device because of tunneling of
electrons with very low probability. The model provides acceptable estimation of the current as shown in the figure in
case of Vg = 0.7, 0.8, 0.9, 1.0V . The first peak starts to enter in the bias window at Vg = 1V as shown in the Fig. 3
(c).
0.8V
1.2V
1.6V
0.7V
1.4V2.1V
1.1V
1.3V
1.5V
1.0V
1.7V
2.3V
(a) (b)
(c) (d)
2.4V
0.9V
Figure 4. Comparison of IV characteristics of the device at various gate voltages between the model and simulations.
Different curves are for different gate voltages mentioned by the curves. At lower gate voltages, less than 1.0V, there
are no peaks inside the bias window. First peak enters in the bias window at Vg = 1.1V so a high current flows. As
the gate voltage increases other peaks also contribute to the current.
IJECE Vol. 8, No. 2, April 2018: 900 – 907
6. IJECE ISSN: 2088-8708 905
-1 -0.5 0 0.5 1
Drain to Source Voltage(V)
-20
-10
0
10
20
DrainCurrent(µA)
Simulations
Model
Vg=1.8V
0 0.5 1
Drain to Source Voltage(V)
0
10
20
30
40
50
DrainCurrent(A)
Simulations
Model w/o Spin
Model w Spin
Figure 5. a) IV characteristics of the simulated device at gate voltage equal to 1.8V and for both positive and negative
drain to source bias. b) IV characteristics obtained from the previous model without considering the spin and from the
current model with the different spectra for spin at Vg = 2.0V .
The current is modeled very effectively at the gate voltages higher than 1V (Fig. 4) because the bias window,
for the selected range of Vds, includes the transmission peaks. As the model is transmission spectrum based so the
results are better when there is a transmission peak inside the bias window. For the sake of clarity, the different curves
shown here are selected in such a way that they do not overlap each other. In Fig. 5 (a) the IV characteristics for
both positive and negative drain to source bias are shown for Vg = 2.0V . This shows that our model is valid for
bidirectional electron flow. And in the Fig. 5 (b) the results from the previous model without considering the spin
(a)
(b)
(c)
Figure 6. The current plotted as a function of Vds and Vg. The shade of greyscale represents the drain current value
based on the scale shown in the figure. The three figures are obtained from a) simulations b) model c) model using
refined set of applied voltages.
Simulation and Modeling of Silicon Based Single ... (Malik Ashter Mehdy)
7. 906 ISSN: 2088-8708
of electron (Model w/o Spin) is compared with the proposed model (Model w Spin) under the same conditions and
parameters. We can see that the proposed model provides very accurate results compared to the previous version of
the model in [23].
The current as a function of Vds and Vg is plotted on grayscale in Fig. 6. The magnitude of the current is
represented by the shade of the gray according to the scale shown in the figure. The dark regions represent the zero or
very small current while the current of higher magnitudes is represented by the light regions. The coulomb blockade
diamonds which are unique characteristics of SET can be seen in the form of dark regions. One large blockade
diamond and one small one can be observed in the figure. The model successfully predicts the same behavior as
obtained from simulations. The resolution of the plots in Fig. 6 (a,b) is not good and it would take high computational
effort to increase it in case of simulations. We have shown the high resolution achieved from the model in Fig. 6 (c).
The time required for the calculations in Fig. 6 (a,b) is 6346s by the TCAD simulations and 1.57s by the model. The
model takes 128s for the calculation with high resolution plot (210 Vds points and 260 Vg points) Fig. 6 (c). All the
simulations were performed on the same system with the Intel core i5 1.8 GHz processor and 6 GB of RAM. The
proposed model provides sufficiently accurate results while maintaining the efficiency. While other compact models
based on macromodeling are also efficient, the proposed model captures the physical information of device with more
details.
5. CONCLUSIONS
In this work, we simulated and modeled the single electron transistor based on silicon quantum dot. We
simulated the device in Atlas TCAD using NEGF formalism in transport direction coupled with Schrodinger equation
in transverse direction. The SET characteristics such as Coulomb blockade and Coulomb diamonds were observed in
the results obtained from the simulations and the model. The IV characteristics of the SET were obtained from the
model having a good agreement with the simulations. The proposed model is simple, efficient, flexible and provides
insights on the physics of the device. In the future, we will include in the model the effect of the change in number of
electrons on the width of the transmission peaks. We will also use the device for circuit level implementation.
REFERENCES
[1] K. Likharev, “Single-electron transistors: Electrostatic analogs of the DC SQUIDS,” IEEE transactions on mag-
netics, vol. 23, no. 2, pp. 1142–1145, 1987.
[2] J. Tucker, “Complementary digital logic based on the ”Coulomb blockade”,” Journal of Applied Physics, vol. 72,
no. 9, pp. 4399–4413, 1992.
[3] H. Fukui et al., “Simple and stable single-electron logic utilizing tunnel-junction load,” Japanese journal of
applied physics, vol. 34, no. 2S, p. 1345, 1995.
[4] K. Uchida et al., “Programmable single-electron transistor logic for future low-power intelligent LSI: proposal
and room-temperature operation,” IEEE Transactions on Electron Devices, vol. 50, no. 7, pp. 1623–1630, 2003.
[5] M. Abutaleb, “A new static differential design style for hybrid SET–CMOS logic circuits,” Journal of Computa-
tional Electronics, vol. 14, no. 1, pp. 329–340, 2015.
[6] G. Srikanth et al., “Fabrication and analysis of amorphous silicon tft,” International Journal of Electrical and
Computer Engineering (IJECE), vol. 7, no. 2, pp. 754–758, 2017.
[7] B. Mehrdel et al., “Effect of device variables on surface potential and threshold voltage in dg-gnrfet,” Interna-
tional Journal of Electrical and Computer Engineering (IJECE), vol. 5, no. 5, 2015.
[8] M. Khaouani and A. Guen-Bouazza, “Impact of multiple channels on the characteristics of rectangular gaa
mosfet,” International Journal of Electrical and Computer Engineering (IJECE), vol. 7, no. 4, pp. 1899–1905,
2017.
[9] L. Zhuang et al., “Silicon single-electron quantum-dot transistor switch operating at room temperature,” Applied
Physics Letters, vol. 72, no. 10, pp. 1205–1207, 1998.
[10] D. H. Kim et al., “Single-electron transistors based on gate-induced Si island for single-electron logic applica-
tion,” IEEE transactions on nanotechnology, vol. 99, no. 4, pp. 170–175, 2002.
[11] A. Samanta et al., “Single-electron quantization at room temperature in a-few-donor quantum dot in silicon
nano-transistors,” Applied Physics Letters, vol. 110, no. 9, p. 093107, 2017.
[12] Y. Tanahashi et al., “Peak position control of Coulomb blockade oscillations in silicon single-electron transistors
with floating gate operating at room temperature,” Japanese Journal of Applied Physics, vol. 53, no. 4S, p.
04EJ08, 2014.
[13] ATLAS Users Manual, “Silvaco International,” Santa Clara, CA, 2014.
IJECE Vol. 8, No. 2, April 2018: 900 – 907
8. IJECE ISSN: 2088-8708 907
[14] M. Anantram et al., “Modeling of nanoscale devices,” Proceedings of the IEEE, vol. 96, no. 9, pp. 1511–1550,
2008.
[15] N. A. Zimbovskaya, “Electron transport through a quantum dot in the Coulomb blockade regime: nonequilibrium
Green’s function based model,” Physical Review B, vol. 78, no. 3, p. 035331, 2008.
[16] M. A. Mehdy et al., “An efficient model for evaluating current in silicon nanocrystals,” in Ph. D. Research in
Microelectronics and Electronics (PRIME), 2016 12th Conference on. IEEE, 2016, pp. 1–4.
[17] C. Wasshuber et al., “SIMON-A simulator for single-electron tunnel devices and circuits,” IEEE Transactions
on Computer-Aided Design of Integrated Circuits and Systems, vol. 16, no. 9, pp. 937–944, 1997.
[18] Y. S. Yu et al., “Macromodeling of single-electron transistors for efficient circuit simulation,” IEEE transactions
on electron devices, vol. 46, no. 8, pp. 1667–1671, 1999.
[19] A. Ghosh et al., “A modified macro model approach for SPICE based simulation of single electron transistor,”
Journal of Computational Electronics, vol. 15, no. 2, pp. 400–406, 2016.
[20] S.-H. Lee et al., “A practical SPICE model based on the physics and characteristics of realistic single-electron
transistors,” IEEE transactions on nanotechnology, vol. 99, no. 4, pp. 226–232, 2002.
[21] K. Miyaji et al., “Compact analytical model for room-temperature-operating silicon single-electron transistors
with discrete quantum energy levels,” IEEE transactions on Nanotechnology, vol. 5, no. 3, pp. 167–173, 2006.
[22] S. Mahapatra et al., “Analytical modeling of single electron transistor for hybrid CMOS-SET analog IC design,”
IEEE Transactions on Electron Devices, vol. 51, no. 11, pp. 1772–1782, 2004.
[23] A. Zahir et al., “EE-BESD: molecular FET modeling for efficient and effective nanocomputing design,” Journal
of Computational Electronics, vol. 15, no. 2, pp. 479–491, 2016.
[24] S. Datta, Quantum transport: atom to transistor. Cambridge University Press, 2005.
BIOGRAPHIES OF AUTHORS
Malik Ashter Mehdy recieved his B.E. Electronics degree from Federal Urdu University, Islam-
abad, Pakistan in 2011 and M.S. degree in Nanotechnology from Politecnico di Torino, Italy in
2014. He is currently a PhD student in Department of Electronics and Telecommunication at Po-
litecnico di Torino,Italy. His research interests include, simulation and modeling of silicon based
single electron transistor.
Mariagrazia Graziano received the DrEng and the PhD degrees in Electronics Engineering from
the Politecnico di Torino, Italy, in 1997 and 2001, respectively. Since 2002, she is a researcher and
since 2005, an assistant professor at the Politecnico di Torino. Since 2008, she is adjunct faculty at
the University of Illinois at Chicago and since 2014 she is a Marie-Skodowska-Curie Intra-European
Fellow at the London Centre for Nanotechnology. Her research interests include design of CMOS
and beyond CMOS devices, circuits and architectures. She is author and coauthor of more than
120 published works. She is a Member of the IEEE since 2007. Further info on her homepage:
http://www.det.polito.it/personale/scheda/(nominativo)/mariagrazia.graziano
Gianluca Piccinini is a Full Professor since 2006 at the Department of Electronics of Po-
litecnico di Torino, Italy, where he teaches electron devices and integrated system technol-
ogy. He received the Dr. Ing and the Ph.D. degrees in electronics engineering in 1986 and
1990 respectively. His research activities started at the end of the 1980s, were initially fo-
cused on VLSI architecture for artificial intelligence and moved, during the 1990s, toward the
physical design of VLSI systems for high rate and high-speed transmission and coding algo-
rithms. His current interests involve the introduction of new technologies as molecular elec-
tronics in integrated systems where he studies transport, advanced microfabrication and self-
assembly technologies in molecular scale systems. He is author and co-author of more than 100
published works and is the holder of one international patent. Further info on his homepage:
http://www.det.polito.it/personale/scheda/(nominativo)/gianluca.piccinini
Simulation and Modeling of Silicon Based Single ... (Malik Ashter Mehdy)