This paper presents the critical effect of mesh grid that should be considered during process and device
simulation using modern TCAD tools in order to develop and optimize their accurate electrical
characteristics. Here, the computational modelling process of developing the NMOS device structure is
performed in Athena and Atlas. The effect of Mesh grid on net doping profile, n++, and LDD sheet
resistance that could link to unwanted “Hot Carrier Effect” were investigated by varying the device grid
resolution in both directions. It is found that y-grid give more profound effect in the doping concentration,
the junction depth formation and the value of threshold voltage during simulation. Optimized mesh grid is
obtained and tested for more accurate and faster simulation. Process parameter (such as oxide thicknesses
and Sheet resistance) as well as Device Parameter (such as linear gain “beta” and SPICE level 3 mobility
roll-off parameter “ Theta”) are extracted and investigated for further different applications.
International Journal of Engineering Research and Applications (IJERA) is a team of researchers not publication services or private publications running the journals for monetary benefits, we are association of scientists and academia who focus only on supporting authors who want to publish their work. The articles published in our journal can be accessed online, all the articles will be archived for real time access.
Our journal system primarily aims to bring out the research talent and the works done by sciaentists, academia, engineers, practitioners, scholars, post graduate students of engineering and science. This journal aims to cover the scientific research in a broader sense and not publishing a niche area of research facilitating researchers from various verticals to publish their papers. It is also aimed to provide a platform for the researchers to publish in a shorter of time, enabling them to continue further All articles published are freely available to scientific researchers in the Government agencies,educators and the general public. We are taking serious efforts to promote our journal across the globe in various ways, we are sure that our journal will act as a scientific platform for all researchers to publish their works online.
Effect of Mobility on (I-V) Characteristics of Gaas MESFET Yayah Zakaria
We present in this paper an analytical model of the current–voltage (I-V) characteristics for submicron GaAs MESFET transistors. This model takes into account the analysis of the charge distribution in the active region and incorporate a field depended electron mobility, velocity saturation and charge
build-up in the channel. We propose in this frame work an algorithm of simulation based on mathematical expressions obtained previously. We propose a new mobility model describing the electric field-dependent. predictions of the simulator are compared with the experimental data [1] and
have been shown to be good.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
Algorithm for Fault Location and Classification on Parallel Transmission Line...IJECEIAES
This paper proposed a new algorithm for fault location and classification using wavelet based on Clarke’s transformation to obtain the fault current. This novel method of fault current approach is studied by comparing the use of the glide path of the fault voltage. The current alpha and beta (Current Mode) were used to transform the signal using discrete wavelet transform (DWT). The fault location was determined by using the Clarke’s transformation, and then turned into a wavelet, which was very precise and thorough. The most accurate was the mother wavelet Db4 which had the fastest time and smallest error detection when compared with the other wavelet mothers. In this study, the Clarke’s transformation is also compared with the Karenbauer’s, which has produced results with similar error percentage. The simulation results using PSCAD / EMTDC software showed that the proposed algorithm could distinguish internal and external faults to get the current signal in the transformation of a signal fault.
International Journal of Engineering Research and Applications (IJERA) is a team of researchers not publication services or private publications running the journals for monetary benefits, we are association of scientists and academia who focus only on supporting authors who want to publish their work. The articles published in our journal can be accessed online, all the articles will be archived for real time access.
Our journal system primarily aims to bring out the research talent and the works done by sciaentists, academia, engineers, practitioners, scholars, post graduate students of engineering and science. This journal aims to cover the scientific research in a broader sense and not publishing a niche area of research facilitating researchers from various verticals to publish their papers. It is also aimed to provide a platform for the researchers to publish in a shorter of time, enabling them to continue further All articles published are freely available to scientific researchers in the Government agencies,educators and the general public. We are taking serious efforts to promote our journal across the globe in various ways, we are sure that our journal will act as a scientific platform for all researchers to publish their works online.
Effect of Mobility on (I-V) Characteristics of Gaas MESFET Yayah Zakaria
We present in this paper an analytical model of the current–voltage (I-V) characteristics for submicron GaAs MESFET transistors. This model takes into account the analysis of the charge distribution in the active region and incorporate a field depended electron mobility, velocity saturation and charge
build-up in the channel. We propose in this frame work an algorithm of simulation based on mathematical expressions obtained previously. We propose a new mobility model describing the electric field-dependent. predictions of the simulator are compared with the experimental data [1] and
have been shown to be good.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
Algorithm for Fault Location and Classification on Parallel Transmission Line...IJECEIAES
This paper proposed a new algorithm for fault location and classification using wavelet based on Clarke’s transformation to obtain the fault current. This novel method of fault current approach is studied by comparing the use of the glide path of the fault voltage. The current alpha and beta (Current Mode) were used to transform the signal using discrete wavelet transform (DWT). The fault location was determined by using the Clarke’s transformation, and then turned into a wavelet, which was very precise and thorough. The most accurate was the mother wavelet Db4 which had the fastest time and smallest error detection when compared with the other wavelet mothers. In this study, the Clarke’s transformation is also compared with the Karenbauer’s, which has produced results with similar error percentage. The simulation results using PSCAD / EMTDC software showed that the proposed algorithm could distinguish internal and external faults to get the current signal in the transformation of a signal fault.
Analytic Estimation of Two-Dimensional Electron Gas Density and Current-Volta...IJECEIAES
This paper is mainly dedicated to understand the phenomena governing the formation of two-dimensional electron gas (2DEG) confined in the quantum well which hold the role of the channel in the high electron density transistors (HEMT) based on AlGaN / GaN heterojunction. The theory takes into account: the crystal structure, the spontaneous and piezoelectric polarization concept, the formation mechanism of two-dimensional electron gas at the AlGaN / GaN interface, the approximate resolution of the Poisson and Schrödinger equations to determine the density of Two-dimensional electron gas after the analytical formula of the current-voltage characteristic is established. Our study is also concerned with the dependence of the twodimensional electron gas density on the following technological parameters: Aluminum molare fraction, AlGaN layer thickness and AlGaN layer doping, In order to control the influence of these parameters on the device performance. Finally, the current-voltage characteristic which reflects the variation of the drain-source current as a function of the modulation of the gate voltage has been discussed.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
Design and Simulation of a Fractal Micro-TransformerIJERA Editor
Due to advancement in smart technologies, the issues like renewable energy integrations into the existing power
systems, reduced weight and size of power equipments is required. In this regard, this work is focused on the
study and design of fractal type micro-transformer for day-to-day applications. An air core transformer is
designed using finite element modeling. The obtained results showed far better implementation parameters in
comparison to the macro transformers.
Deterioration of short channel effectsijistjournal
In the proposed work, the analytical model for Surface potential and Electric field has been carried out in a
novel structure named dual halo triple material Surrounding-gate metal-oxide-semiconductor field effect
transistor (DHTMSG). The new device has been incorporated with symmetrical dual halo regions near
source and drain ends, while the gate terminal consists of three different metals with different work
functions. The results prove that the device significantly deteriorates the short channel effects which are
studied by analytical model for surface potential and electric field using parabolic approximation method.
The analytical results are endorsed by the simulation results.
Threshold voltage model for hetero-gate-dielectric tunneling field effect tra...IJECEIAES
In this paper, a two dimensional analytical model of the threshold voltage for HGD TFET structure has been proposed. We have also presented the analytical models for the tunneling width and the channel potential. The potential model is used to develop the physics based model of threshold voltage by exploring the transition between linear to exponential dependence of drain current on the gate bias. The proposed model depends on the drain voltage, gate dielectric near the source and drain, silicon film thickness, work function of gate metal and oxide thickness. The accuracy of the proposed model is verified by simulation results of 2-D ATLAS simulator. Due to the reduction of the equivalent oxide thickness, the coupling between the gate and the channel junction enhances which results in lower threshold voltage. Tunneling width becomes narrower at a given gate voltage for the optimum channel concentration of 10 16 /cm 3 . The higher concentration in the source (N s ) causes a steep bending in the conduction and valence bands compared to the lower concentration which results in smaller tunneling width at the source-channel interface.
NON-SPLIT PERFECTLY MATCHED LAYER BOUNDARY CONDITIONS FOR NUMERICAL SOLUTION ...ijeljournal
This paper developed a non - split perfectly matched layer (PML) boundary condition (BC) for Finite Difference Time Domain (FDTD) simulation of electromagnetic wave propagation in 2D structure. The
point source for electric field has been exploited for propagation of electromagnetic field through 2D structures to validate developed approach. The identity of resulted field distribution to that obtained for split PML BC have been demonstrated.
Non-split Perfectly Matched Layer Boundary Conditions for Numerical Solution ...ijeljournal
This paper developed a non - split perfectly matched layer (PML) boundary condition (BC) for Finite Difference Time Domain (FDTD) simulation of electromagnetic wave propagation in 2D structure. The point source for electric field has been exploited for propagation of electromagnetic field through 2D structures to validate developed approach. The identity of resulted field distribution to that obtained for split PML BC have been demonstrated.
ULTRA HIGH SPEED FACTORIAL DESIGN IN SUB-NANOMETER TECHNOLOGYcscpconf
This work proposes a high speed and low power factorial design in 22nm technology and also it counts the effect of sub nano-meter constraints on this circuit. A comparative study for this
design has been done for 90nm, 45nm and 22nm technology. The rise in circuit complexity and speed is accompanied by the scaling of MOSFET’s. The transistor saturation current Idsat is an important parameter because the transistor current determines the time needed to charge and discharge the capacitive loads on chip, and thus impacts the product speed more than any other transistor parameter. The efficient implementation of a factorial number is carried out by using
a decremented and multipliers which has been lucidly discussed in this paper. Normally in a factorial module a number is calculated as the iterative multiplication of the given number to
the decremented value of the given number. A Parallel adder based decremented has been proposed for calculating the factorial of any number that also includes 0 and 1. The
performances are calculated by using the existing 90-nm CMOS technology and scaling down the existing technology to 45-nm and 22-nm.
Circuit-based method for extracting the resistive leakage current of metal ox...journalBEEI
Resistive leakage current based condition assessment of metal oxide surge arrester (MOSA) is one of the most extensively employed technique to monitor its degradation. An extraction method is customarily required to extract the resistive component from the total leakage current. The existing methods to extract the resistive current are complex and less accurate. Therefore, this paper describes a simple and accurate circuit-based method to extract the resistive current using equivalent model and measured leakage current of the arrester. The accuracy of the proposed method is validated through experimental results on ABB’s 120 kV surge arrester, EMTP and QuickField software simulations. The performance of the method is also analyzed and verified experimentally on 72, 180 and 240 kV rated ABB’s surge arresters. The obtained results of resistive leakage current have shown the maximum error of 0.001%. Simple and easier computational steps with higher accuracy are the key benefits of the proposed technique.
MODELING OF PLANAR METAMATERIAL STRUCTURE AND ITS EFFECTIVE PARAMETER EXTRACTIONIAEME Publication
This paper is about designing a Metamaterial structure and the Scattering Parameter Extraction Method that has become a prime tool for Metamaterial characterization so that there is a better understanding of relation between their configuration and associated properties of these materials in terms of negative permittivity and negative permeability to explore application potential. A 2D planar Metamaterial structure has been designed, fabricated and analyzed. It consists of conducting patches and meander lines on a dielectric substrate. Electromagnetic modeling was carried out using Finite Difference Time Domain method based simulation tool EMPIRE XCcel.
Algeria engages with determination on the path renewable energies to bring global and long-lasting
solutions to the environmental challenges and to the problems of conservation of the energy resources of
fossil origin. Our study is interested on the wind spinneret which seems one of the most promising with a
very high global growth rate. The object of this article is to estimate the wind deposit of the region of Oran
(Es Senia), important stage in any planning and realization of wind plant. In our work, we began with the
processing of schedules data relative to the wind collected over a period of more than 50 years, to evaluate
the wind potential while determining its frequencies. Then, we calculated the total electrical energy
produced at various heights with three types of wind turbines.The analysis of the results shows that the
wind turbines of major powers allow producing important quantities of energy when we increase the height
of their hubs to take advantage of stronger speeds of wind.
Grid computing or network computing is developed to make the available electric power in the similar way
as it is available for the grid. For that we just plug in the power and whoever needs power, may use it. In
grid computing if a system needs more power than available it can share the computing with other
machines connected in a grid. In this way we can use the power of a super computer without a huge cost
and the CPU cycles that were wasted previously can also be utilized. For performing grid computation in
joined computers through the internet, the software must be installed which supports grid computation on
each computer inside the VO. The software handles information queries, storage management, processing
scheduling, authentication and data encryption to ensure information security.
Quality estimation of machine translation outputs through stemmingijcsa
Machine Translation is the challenging problem for Indian languages. Every day we can see some machine
translators being developed , but getting a high quality automatic translation is still a very distant dream .
The correct translated sentence for Hindi language is rarely found. In this paper, we are emphasizing on
English-Hindi language pair, so in order to preserve the correct MT output we present a ranking system,
which employs some machine learning techniques and morphological features. In ranking no human
intervention is required. We have also validated our results by comparing it with human ranking.
The proposed technique is capable of segmenting the lung’s air and its soft tissues followed by estimating
the lung’s air volume and its variations throughout the image sequence. The work presents a methodology
that consists of three steps. In the first step, CT image sequence are to be given as input where histograms
of all images within the sequence are calculated and they are overlaid in order to form the sequence’s
combined histogram to extract lung air area. In the second step, segment the lung air area by using
optimum threshold based method. In the third step, voxels in the rendered volume will be counted and the
percentage of air consumption will be estimated. The result will indicate a very good ability of the
proposed method for estimating the lung’s air volume and its variations in a respiratory image sequence.
Analytic Estimation of Two-Dimensional Electron Gas Density and Current-Volta...IJECEIAES
This paper is mainly dedicated to understand the phenomena governing the formation of two-dimensional electron gas (2DEG) confined in the quantum well which hold the role of the channel in the high electron density transistors (HEMT) based on AlGaN / GaN heterojunction. The theory takes into account: the crystal structure, the spontaneous and piezoelectric polarization concept, the formation mechanism of two-dimensional electron gas at the AlGaN / GaN interface, the approximate resolution of the Poisson and Schrödinger equations to determine the density of Two-dimensional electron gas after the analytical formula of the current-voltage characteristic is established. Our study is also concerned with the dependence of the twodimensional electron gas density on the following technological parameters: Aluminum molare fraction, AlGaN layer thickness and AlGaN layer doping, In order to control the influence of these parameters on the device performance. Finally, the current-voltage characteristic which reflects the variation of the drain-source current as a function of the modulation of the gate voltage has been discussed.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
Design and Simulation of a Fractal Micro-TransformerIJERA Editor
Due to advancement in smart technologies, the issues like renewable energy integrations into the existing power
systems, reduced weight and size of power equipments is required. In this regard, this work is focused on the
study and design of fractal type micro-transformer for day-to-day applications. An air core transformer is
designed using finite element modeling. The obtained results showed far better implementation parameters in
comparison to the macro transformers.
Deterioration of short channel effectsijistjournal
In the proposed work, the analytical model for Surface potential and Electric field has been carried out in a
novel structure named dual halo triple material Surrounding-gate metal-oxide-semiconductor field effect
transistor (DHTMSG). The new device has been incorporated with symmetrical dual halo regions near
source and drain ends, while the gate terminal consists of three different metals with different work
functions. The results prove that the device significantly deteriorates the short channel effects which are
studied by analytical model for surface potential and electric field using parabolic approximation method.
The analytical results are endorsed by the simulation results.
Threshold voltage model for hetero-gate-dielectric tunneling field effect tra...IJECEIAES
In this paper, a two dimensional analytical model of the threshold voltage for HGD TFET structure has been proposed. We have also presented the analytical models for the tunneling width and the channel potential. The potential model is used to develop the physics based model of threshold voltage by exploring the transition between linear to exponential dependence of drain current on the gate bias. The proposed model depends on the drain voltage, gate dielectric near the source and drain, silicon film thickness, work function of gate metal and oxide thickness. The accuracy of the proposed model is verified by simulation results of 2-D ATLAS simulator. Due to the reduction of the equivalent oxide thickness, the coupling between the gate and the channel junction enhances which results in lower threshold voltage. Tunneling width becomes narrower at a given gate voltage for the optimum channel concentration of 10 16 /cm 3 . The higher concentration in the source (N s ) causes a steep bending in the conduction and valence bands compared to the lower concentration which results in smaller tunneling width at the source-channel interface.
NON-SPLIT PERFECTLY MATCHED LAYER BOUNDARY CONDITIONS FOR NUMERICAL SOLUTION ...ijeljournal
This paper developed a non - split perfectly matched layer (PML) boundary condition (BC) for Finite Difference Time Domain (FDTD) simulation of electromagnetic wave propagation in 2D structure. The
point source for electric field has been exploited for propagation of electromagnetic field through 2D structures to validate developed approach. The identity of resulted field distribution to that obtained for split PML BC have been demonstrated.
Non-split Perfectly Matched Layer Boundary Conditions for Numerical Solution ...ijeljournal
This paper developed a non - split perfectly matched layer (PML) boundary condition (BC) for Finite Difference Time Domain (FDTD) simulation of electromagnetic wave propagation in 2D structure. The point source for electric field has been exploited for propagation of electromagnetic field through 2D structures to validate developed approach. The identity of resulted field distribution to that obtained for split PML BC have been demonstrated.
ULTRA HIGH SPEED FACTORIAL DESIGN IN SUB-NANOMETER TECHNOLOGYcscpconf
This work proposes a high speed and low power factorial design in 22nm technology and also it counts the effect of sub nano-meter constraints on this circuit. A comparative study for this
design has been done for 90nm, 45nm and 22nm technology. The rise in circuit complexity and speed is accompanied by the scaling of MOSFET’s. The transistor saturation current Idsat is an important parameter because the transistor current determines the time needed to charge and discharge the capacitive loads on chip, and thus impacts the product speed more than any other transistor parameter. The efficient implementation of a factorial number is carried out by using
a decremented and multipliers which has been lucidly discussed in this paper. Normally in a factorial module a number is calculated as the iterative multiplication of the given number to
the decremented value of the given number. A Parallel adder based decremented has been proposed for calculating the factorial of any number that also includes 0 and 1. The
performances are calculated by using the existing 90-nm CMOS technology and scaling down the existing technology to 45-nm and 22-nm.
Circuit-based method for extracting the resistive leakage current of metal ox...journalBEEI
Resistive leakage current based condition assessment of metal oxide surge arrester (MOSA) is one of the most extensively employed technique to monitor its degradation. An extraction method is customarily required to extract the resistive component from the total leakage current. The existing methods to extract the resistive current are complex and less accurate. Therefore, this paper describes a simple and accurate circuit-based method to extract the resistive current using equivalent model and measured leakage current of the arrester. The accuracy of the proposed method is validated through experimental results on ABB’s 120 kV surge arrester, EMTP and QuickField software simulations. The performance of the method is also analyzed and verified experimentally on 72, 180 and 240 kV rated ABB’s surge arresters. The obtained results of resistive leakage current have shown the maximum error of 0.001%. Simple and easier computational steps with higher accuracy are the key benefits of the proposed technique.
MODELING OF PLANAR METAMATERIAL STRUCTURE AND ITS EFFECTIVE PARAMETER EXTRACTIONIAEME Publication
This paper is about designing a Metamaterial structure and the Scattering Parameter Extraction Method that has become a prime tool for Metamaterial characterization so that there is a better understanding of relation between their configuration and associated properties of these materials in terms of negative permittivity and negative permeability to explore application potential. A 2D planar Metamaterial structure has been designed, fabricated and analyzed. It consists of conducting patches and meander lines on a dielectric substrate. Electromagnetic modeling was carried out using Finite Difference Time Domain method based simulation tool EMPIRE XCcel.
Algeria engages with determination on the path renewable energies to bring global and long-lasting
solutions to the environmental challenges and to the problems of conservation of the energy resources of
fossil origin. Our study is interested on the wind spinneret which seems one of the most promising with a
very high global growth rate. The object of this article is to estimate the wind deposit of the region of Oran
(Es Senia), important stage in any planning and realization of wind plant. In our work, we began with the
processing of schedules data relative to the wind collected over a period of more than 50 years, to evaluate
the wind potential while determining its frequencies. Then, we calculated the total electrical energy
produced at various heights with three types of wind turbines.The analysis of the results shows that the
wind turbines of major powers allow producing important quantities of energy when we increase the height
of their hubs to take advantage of stronger speeds of wind.
Grid computing or network computing is developed to make the available electric power in the similar way
as it is available for the grid. For that we just plug in the power and whoever needs power, may use it. In
grid computing if a system needs more power than available it can share the computing with other
machines connected in a grid. In this way we can use the power of a super computer without a huge cost
and the CPU cycles that were wasted previously can also be utilized. For performing grid computation in
joined computers through the internet, the software must be installed which supports grid computation on
each computer inside the VO. The software handles information queries, storage management, processing
scheduling, authentication and data encryption to ensure information security.
Quality estimation of machine translation outputs through stemmingijcsa
Machine Translation is the challenging problem for Indian languages. Every day we can see some machine
translators being developed , but getting a high quality automatic translation is still a very distant dream .
The correct translated sentence for Hindi language is rarely found. In this paper, we are emphasizing on
English-Hindi language pair, so in order to preserve the correct MT output we present a ranking system,
which employs some machine learning techniques and morphological features. In ranking no human
intervention is required. We have also validated our results by comparing it with human ranking.
The proposed technique is capable of segmenting the lung’s air and its soft tissues followed by estimating
the lung’s air volume and its variations throughout the image sequence. The work presents a methodology
that consists of three steps. In the first step, CT image sequence are to be given as input where histograms
of all images within the sequence are calculated and they are overlaid in order to form the sequence’s
combined histogram to extract lung air area. In the second step, segment the lung air area by using
optimum threshold based method. In the third step, voxels in the rendered volume will be counted and the
percentage of air consumption will be estimated. The result will indicate a very good ability of the
proposed method for estimating the lung’s air volume and its variations in a respiratory image sequence.
MOVEMENT ASSISTED COMPONENT BASED SCALABLE FRAMEWORK FOR DISTRIBUTED WIRELESS...ijcsa
Intelligent networks are becoming more enveloping and dwelling a new generation of applications are
deployed over the peer-to-peer networks. Intelligent networks are very attractive because of their role in
improving the scalability and enhancing performance by enabling direct and real-time communication
among the participating network stations. A suitable solution for resource management in distributed wireless systems is required which should support fault-tolerant operations, requested resources (at shortest path), minimize overhead generation during network management, balancing the load distribution between the participating stations and high probability of lookup success and many more. This article
presents a Movement Assisted Component Based Scalable Framework (MAC-SF) for the distributed
network which manages the distributed wireless resources and applications; monitors the behavior of the
distributed wireless applications transparently and attains accurate resource projections, manages the
connections between the participating network stations and distributes the active objects in response to the
user requests and changing processing and network conditions. This system is also compared with some
exiting systems. Results shows that MAC-SF is a better system and can be used in any wireless network.
Logic coverage criteria are central aspect of programs and specifications in the testing of software. A
Boolean expression with n variables in expression 2n distinct test cases is required for exhaustive testing
.This is expensive even when n is modestly large. The possible solution is to select a small subset of all
possible test cases which can effectively detect most of the common faults. Test case prioritization is one of
the key techniques for making testing cost effective. In present study performance index of test suite is
calculated for two Boolean specification testing techniques MUMCUT and Minimal-MUMCUT.
Performance index helps to measure the efficiency and determine when testing can be stopped in case of
limited resources. This paper evaluates the testability of generated single faults according to the number of
test cases used to detect them. Test cases are generated from logic expressions in irredundant normal form
(IDNF) derived from specifications or source code. The efficiency of prioritization techniques has been
validated by an empirical study done on bench mark expressions using Performance Index (PI) metric.
Hybrid hmmdtw based speech recognition with kernel adaptive filtering methodijcsa
We have proposed new approach for the speech recognition system by applying kernel adaptive filter for
speech enhancement and for the recognition, the hybrid HMM/DTW methods are used in this paper. Noise
removal is very important in many applications like telephone conversation, speech recognition, etc. In the
recent past, the kernel methods are showing good results for speech processing applications. The feature
used in the recognition process is MFCC features. It consists of a HMM system used to train the speech
features and for classification purpose used the DTW method. Experimental results show a relative
improvement of recognition rate compared to the traditional methods.
REAL TIME SPECIAL EFFECTS GENERATION AND NOISE FILTRATION OF AUDIO SIGNAL USI...ijcsa
Digital signal processing is being increasingly used for audio processing applications. Digital audio effects
refer to all those algorithms that are used for enhancing sound in any of the steps of a processing chain of
music production. Real time audio effects generation is a highly challenging task in the field of signal
processing. Now a day, almost every high end multimedia audio device does digital signal processing in
one form or another. For years musicians have used different techniques to give their music a unique
sound. Earlier, these techniques were implemented after a lot of work and experimentation. However, now
with the emergence of digital signal processing this task is simplified to a great extent. In this article, the
generations of special effects like echo, flanging, reverberation, stereo, karaoke, noise filtering etc are
successfully implemented using MATLAB and an attractive GUI has been designed for the same.
Graph coloring is the assignment of colors to the graph vertices and edges in the graph theory. We can
divide the graph coloring in two types. The first is vertex coloring and the second is edge coloring. The
condition which we follow in graph coloring is that the incident vertices/edges have not the same color.
There are some algorithms which solve the problem of graph coloring. Some are offline algorithm and
others are online algorithm. Where offline means the graph is known in advance and the online means that
the edges of the graph are arrive one by one as an input, and We need to color each edge as soon as it is
added to the graph and the main issue is that we want to minimize the number of colors. We cannot change
the color of an edge after colored in an online algorithm. In this paper, we improve the online algorithm
for edge coloring. There is also a theorem which proves that if the maximum degree of a graph is Δ, then it
is possible to color its edges, in polynomial time, using at most Δ+ 1 color. The algorithm provided by
Vizing is offline, i.e., it assumes the whole graph is known in advance. In online algorithm edges arrive one
by one in a random permutation. This online algorithm is inspired by a distributed offline algorithm of
Panconesi and Srinivasan, referred as PS algorithm, works on 2-rounds which we extend by reusing colors
online in multiple rounds.
In this paper a new evolutionary algorithm, for continuous nonlinear optimization problems, is surveyed.
This method is inspired by the life of a bird, called Cuckoo.
The Cuckoo Optimization Algorithm (COA) is evaluated by using the Rastrigin function. The problem is a
non-linear continuous function which is used for evaluating optimization algorithms. The efficiency of the
COA has been studied by obtaining optimal solution of various dimensions Rastrigin function in this paper.
The mentioned function also was solved by FA and ABC algorithms. Comparing the results shows the COA
has better performance than other algorithms.
Application of algorithm to test function has proven its capability to deal with difficult optimization
Security & privacy issues of cloud & grid computing networksijcsa
Cloud computing is a new field in Internet computing that provides novel perspectives in internetworking
technologies. Cloud computing has become a significant technology in field of information technology.
Security of confidential data is a very important area of concern as it can make way for very big problems
if unauthorized users get access to it. Cloud computing should have proper techniques where data is
segregated properly for data security and confidentiality. This paper strives to compare and contrast cloud
computing with grid computing, along with the Tools and simulation environment & Tips to store data and
files safely in Cloud.
Augmented split –protocol; an ultimate d do s defenderijcsa
Distributed Denials of Service (DDoS) attacks have become the daunting problem for businesses, state
administrator and computer system users. Prevention and detection of a DDoS attack is a major research
topic for researchers throughout the world. As new remedies are developed to prevent or mitigate DDoS
attacks, invaders are continually evolving new methods to circumvent these new procedures. In this paper,
we describe various DDoS attack mechanisms, categories, scope of DDoS attacks and their existing
countermeasures. In response, we propose to introduce DDoS resistant Augmented Split-protocol (ASp).
The migratory nature and role changeover ability of servers in Split-protocol architecture will avoid
bottleneck at the server side. It also offers the unique ability to avoid server saturation and compromise
from DDoS attacks. The goal of this paper is to present the concept and performance of (ASp) as a
defensive tool against DDoS attacks.
AN ENHANCED EDGE ADAPTIVE STEGANOGRAPHY APPROACH USING THRESHOLD VALUE FOR RE...ijcsa
This paper attempts to improve the quality and the modification rate of a Stego Image. The input image
provided for estimating the quality of an image and the modified rate is a bitmap image. The threshold
value is used as a parameter for selecting the high frequency pixels from the Cover Image. The data
embedding process are performed on the pixels that are found with the help of Threshold value by using
LSBMR. The quality of an image is estimated by the value of PSNR and the modification rate of an image is
estimated by the value of MSE. The proposed approach achieves about 0.2 to 0.6 % of improvement in the
quality of an image and about 4 to 10 % of improvement in the modification rate of an image compared to
the edge detection techniques such as Sobel and Canny.
Mining sequential patterns for interval basedijcsa
Sequential pattern mining finds the frequent subsequences or patterns from the given sequences.
TPrefixSpan algorithm finds the relevant frequent patterns from the given sequential patterns formed using
interval based events. In our proposed work, we add multiple constraints like item, length and aggregate to
the interval based TPrefixSpan algorithm. By adding these constraints the efficiency and effectiveness of
the algorithm improves. The proposed constraint based algorithm CTPrefixSpan has been applied to
synthetic medical dataset. The algorithm can be applied for stock market analysis, DNA sequences analysis
etc.
KEYWORDS
Sequential patterns, temporal patterns, Constraints, Interval based events.
Simulation and Modeling of Silicon Based Single Electron TransistorIJECEIAES
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A Hybrid Model to Predict Electron and Ion Distributions in Entire Interelect...Fa-Gung Fan
Atmospheric direct current (dc) corona discharge
from thin wires or sharp needles has been widely used as an ion
source in many devices such as photocopiers, laser printers, and
electronic air cleaners. Existing numerical models to predict the
electron distribution in the corona plasma are based on charge
continuity equations and the simplified Boltzmann equation. In
this paper, negative dc corona discharges produced from a thin
wire in dry air are modeled using a hybrid model of modified
particle-in-cell plus Monte Carlo collision (PIC-MCC) and a
continuum approach. The PIC-MCC model predicts densities of
charge carriers and electron kinetic energy distributions in the
plasma region, while the continuum model predicts the densities of
charge carriers in the unipolar ion region. Results from the hybrid
model are compared with those from prior continuum models.
Superior to the prior continuum model, the hybrid model is able
to predict the voltage–current curve of corona discharges. The
PIC-MCC simulation results also suggest the validity of the local
approximation used to solve the Boltzmann equation in the prior
continuum model.
The main stake is to detect a defective component or likely to become it during manufacture or inservice inspections, while improving control productivity. In this context, we develop a simulation tool of EC fastened structures testing, integrated to the ANSYS platform, aimed at conceiving testing methods, optimizing and qualifying it. The finite element method has been chosen, it is suitable for this type of problem. Various configurations have been considered for the inspection of a target with a defect in different thicknesses. Due to the impossibility to detect a defect located at a distance much greater than the skin depth δ. Indeed, the eddy currents amplitude are less than 95% of the maximum amplitude beyond a depth greater than 3 δ. We are interested in the detection of defects located at depths higher to three times the skin depth.
An Analytical Model for Fringing Capacitance in Double gate Hetero Tunnel FET...VLSICS Design
In this paper fringe capacitance of double hetero gate Tunnel FET has been studied. The physical model for fringe capacitance is derived considering source gate overlap and gate drain non overlap. Inerface trap charge and oxide charges are also introduced under positive bias stress and hot carrier stress and their effect on fringe capacitance is also studied. The fringe capacitance is significant speed limiter in Double gate technology. The model is tested by comparing with simulation results obtained from Sentauras TCAD simulations.
Effect of Mobility on (I-V) Characteristics of Gaas MESFET IJECEIAES
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DETERIORATION OF SHORT CHANNEL EFFECTS IN DUAL HALO BASED TRIPLE MATERIAL SUR...ijistjournal
In the proposed work, the analytical model for Surface potential and Electric field has been carried out in a novel structure named dual halo triple material Surrounding-gate metal-oxide-semiconductor field effect transistor (DHTMSG). The new device has been incorporated with symmetrical dual halo regions near source and drain ends, while the gate terminal consists of three different metals with different work functions. The results prove that the device significantly deteriorates the short channel effects which are studied by analytical model for surface potential and electric field using parabolic approximation method. The analytical results are endorsed by the simulation results.
Carbon nano tube based delay model for high speed energy efficient on chip da...elelijjournal
Speed is a major concern for high density VLSI networks. In this paper the closed form delay model for current mode signalling in VLSI interconnects has been proposed with resistive load termination.RLC interconnect line is modelled using characteristic impedance of transmission line and inductive effect.The inductive effect is dominant at lower technology node is modelled into an equivalent resistance. In this model first order transfer function is designed using finite difference equation, and by applying the boundary conditions at the source and load termination. It has been observed that the dominant pole determines system response and delay in the proposed model. Using CNIA tool (carbon nanotube interconnect analyzer) the interconnect line parameters has been estimated at 45nm technology node. The novel proposed current mode model superiority has been validated for CNT type of material. It superiority factor remains to 66.66% as compared to voltage mode signalling. And current mode dissipates 0.015pJ energy where as VM consume 0.045pJ for a single bit transmission across the interconnect over CNT
material. Secondly the damping factor of a lumped RLC circuit is shown to be a useful figure of merit.
Analysis Of 3C-Sic Double Implanted MOSFET With Gaussian Profile Doping In Th...IJRES Journal
The present work aims at the design of 3C-SiC Double Implanted Metal Oxide Semiconductor Field Effect Transistor (DIMOSFET) with Gaussian doping profile in drift region for high breakdown voltages. By varying the device height ‘h’, function constant m and peak concentration 𝑁0, analysis has been done for an optimum profile for high breakdown voltage. With Gaussian profile peak concentration 𝑁0 = 1016 𝑐𝑚−3 at drain end and m as 1.496 ×10−2cm, highest breakdown voltage of 6.84kV has been estimated with device height of 200μm.
Connector Corner: Automate dynamic content and events by pushing a buttonDianaGray10
Here is something new! In our next Connector Corner webinar, we will demonstrate how you can use a single workflow to:
Create a campaign using Mailchimp with merge tags/fields
Send an interactive Slack channel message (using buttons)
Have the message received by managers and peers along with a test email for review
But there’s more:
In a second workflow supporting the same use case, you’ll see:
Your campaign sent to target colleagues for approval
If the “Approve” button is clicked, a Jira/Zendesk ticket is created for the marketing design team
But—if the “Reject” button is pushed, colleagues will be alerted via Slack message
Join us to learn more about this new, human-in-the-loop capability, brought to you by Integration Service connectors.
And...
Speakers:
Akshay Agnihotri, Product Manager
Charlie Greenberg, Host
Search and Society: Reimagining Information Access for Radical FuturesBhaskar Mitra
The field of Information retrieval (IR) is currently undergoing a transformative shift, at least partly due to the emerging applications of generative AI to information access. In this talk, we will deliberate on the sociotechnical implications of generative AI for information access. We will argue that there is both a critical necessity and an exciting opportunity for the IR community to re-center our research agendas on societal needs while dismantling the artificial separation between the work on fairness, accountability, transparency, and ethics in IR and the rest of IR research. Instead of adopting a reactionary strategy of trying to mitigate potential social harms from emerging technologies, the community should aim to proactively set the research agenda for the kinds of systems we should build inspired by diverse explicitly stated sociotechnical imaginaries. The sociotechnical imaginaries that underpin the design and development of information access technologies needs to be explicitly articulated, and we need to develop theories of change in context of these diverse perspectives. Our guiding future imaginaries must be informed by other academic fields, such as democratic theory and critical theory, and should be co-developed with social science scholars, legal scholars, civil rights and social justice activists, and artists, among others.
GraphRAG is All You need? LLM & Knowledge GraphGuy Korland
Guy Korland, CEO and Co-founder of FalkorDB, will review two articles on the integration of language models with knowledge graphs.
1. Unifying Large Language Models and Knowledge Graphs: A Roadmap.
https://arxiv.org/abs/2306.08302
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https://www.microsoft.com/en-us/research/blog/graphrag-unlocking-llm-discovery-on-narrative-private-data/
Epistemic Interaction - tuning interfaces to provide information for AI supportAlan Dix
Paper presented at SYNERGY workshop at AVI 2024, Genoa, Italy. 3rd June 2024
https://alandix.com/academic/papers/synergy2024-epistemic/
As machine learning integrates deeper into human-computer interactions, the concept of epistemic interaction emerges, aiming to refine these interactions to enhance system adaptability. This approach encourages minor, intentional adjustments in user behaviour to enrich the data available for system learning. This paper introduces epistemic interaction within the context of human-system communication, illustrating how deliberate interaction design can improve system understanding and adaptation. Through concrete examples, we demonstrate the potential of epistemic interaction to significantly advance human-computer interaction by leveraging intuitive human communication strategies to inform system design and functionality, offering a novel pathway for enriching user-system engagements.
The Art of the Pitch: WordPress Relationships and SalesLaura Byrne
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All these questions and more will be explored as we talk about matching clients’ needs with what your agency offers without pulling teeth or pulling your hair out. Practical tips, and strategies for successful relationship building that leads to closing the deal.
Slack (or Teams) Automation for Bonterra Impact Management (fka Social Soluti...Jeffrey Haguewood
Sidekick Solutions uses Bonterra Impact Management (fka Social Solutions Apricot) and automation solutions to integrate data for business workflows.
We believe integration and automation are essential to user experience and the promise of efficient work through technology. Automation is the critical ingredient to realizing that full vision. We develop integration products and services for Bonterra Case Management software to support the deployment of automations for a variety of use cases.
This video focuses on the notifications, alerts, and approval requests using Slack for Bonterra Impact Management. The solutions covered in this webinar can also be deployed for Microsoft Teams.
Interested in deploying notification automations for Bonterra Impact Management? Contact us at sales@sidekicksolutionsllc.com to discuss next steps.
GDG Cloud Southlake #33: Boule & Rebala: Effective AppSec in SDLC using Deplo...James Anderson
Effective Application Security in Software Delivery lifecycle using Deployment Firewall and DBOM
The modern software delivery process (or the CI/CD process) includes many tools, distributed teams, open-source code, and cloud platforms. Constant focus on speed to release software to market, along with the traditional slow and manual security checks has caused gaps in continuous security as an important piece in the software supply chain. Today organizations feel more susceptible to external and internal cyber threats due to the vast attack surface in their applications supply chain and the lack of end-to-end governance and risk management.
The software team must secure its software delivery process to avoid vulnerability and security breaches. This needs to be achieved with existing tool chains and without extensive rework of the delivery processes. This talk will present strategies and techniques for providing visibility into the true risk of the existing vulnerabilities, preventing the introduction of security issues in the software, resolving vulnerabilities in production environments quickly, and capturing the deployment bill of materials (DBOM).
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Bob Boule
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Gopinath Rebala
Gopinath Rebala is the CTO of OpsMx, where he has overall responsibility for the machine learning and data processing architectures for Secure Software Delivery. Gopi also has a strong connection with our customers, leading design and architecture for strategic implementations. Gopi is a frequent speaker and well-known leader in continuous delivery and integrating security into software delivery.
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LF Energy Webinar: Electrical Grid Modelling and Simulation Through PowSyBl -...DanBrown980551
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PowSyBl is an open source project hosted by LF Energy, which offers a comprehensive set of features for electrical grid modelling and simulation. Among other advanced features, PowSyBl provides:
- A fully editable and extendable library for grid component modelling;
- Visualization tools to display your network;
- Grid simulation tools, such as power flows, security analyses (with or without remedial actions) and sensitivity analyses;
The framework is mostly written in Java, with a Python binding so that Python developers can access PowSyBl functionalities as well.
What you will learn during the webinar:
- For beginners: discover PowSyBl's functionalities through a quick general presentation and the notebook, without needing any expert coding skills;
- For advanced developers: master the skills to efficiently apply PowSyBl functionalities to your real-world scenarios.
Key Trends Shaping the Future of Infrastructure.pdfCheryl Hung
Keynote at DIGIT West Expo, Glasgow on 29 May 2024.
Cheryl Hung, ochery.com
Sr Director, Infrastructure Ecosystem, Arm.
The key trends across hardware, cloud and open-source; exploring how these areas are likely to mature and develop over the short and long-term, and then considering how organisations can position themselves to adapt and thrive.
UiPath Test Automation using UiPath Test Suite series, part 4DianaGray10
Welcome to UiPath Test Automation using UiPath Test Suite series part 4. In this session, we will cover Test Manager overview along with SAP heatmap.
The UiPath Test Manager overview with SAP heatmap webinar offers a concise yet comprehensive exploration of the role of a Test Manager within SAP environments, coupled with the utilization of heatmaps for effective testing strategies.
Participants will gain insights into the responsibilities, challenges, and best practices associated with test management in SAP projects. Additionally, the webinar delves into the significance of heatmaps as a visual aid for identifying testing priorities, areas of risk, and resource allocation within SAP landscapes. Through this session, attendees can expect to enhance their understanding of test management principles while learning practical approaches to optimize testing processes in SAP environments using heatmap visualization techniques
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1. Insights into SAP testing best practices
2. Heatmap utilization for testing
3. Optimization of testing processes
4. Demo
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Execution from the test manager
Orchestrator execution result
Defect reporting
SAP heatmap example with demo
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Smart TV Buyer Insights Survey 2024 by 91mobiles.pdf91mobiles
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Let me take this questions and provide you a short journey through existing deployment models and use cases for AI software. On practical examples, we discuss what cloud/on-premise strategy we may need for applying it to our own infrastructure to get it to work from an enterprise perspective. I want to give an overview about infrastructure requirements and technologies, what could be beneficial or limiting your AI use cases in an enterprise environment. An interactive Demo will give you some insides, what approaches I got already working for real.
Kubernetes & AI - Beauty and the Beast !?! @KCD Istanbul 2024
Effect of mesh grid structure in reducing hot carrier effect of nmos device simulation
1. International Journal on Computational Sciences & Applications (IJCSA) Vol.4, No.3, June 2014
DOI:10.5121/ijcsa.2014.4311 117
EFFECT OF MESH GRID STRUCTURE IN REDUCING
“HOT CARRIER EFFECT” OF NMOS DEVICE
SIMULATION
Khomdram Jolson Singh1
, Terirama Thingujam1
, Laishram Bidyapati Devi1
,
N.Basanta Singh1
, Subir Kumar Sarkar2
1
Dept. of Electronics and Communication Engineering, Manipur Institute of Technology
,Imphal-795004(India)
2
Dept. of Electronics and Telecommunication Engineering, Jadavpur University
,Kolkata 700032(India)
ABSTRACT
This paper presents the critical effect of mesh grid that should be considered during process and device
simulation using modern TCAD tools in order to develop and optimize their accurate electrical
characteristics. Here, the computational modelling process of developing the NMOS device structure is
performed in Athena and Atlas. The effect of Mesh grid on net doping profile, n++, and LDD sheet
resistance that could link to unwanted “Hot Carrier Effect” were investigated by varying the device grid
resolution in both directions. It is found that y-grid give more profound effect in the doping concentration,
the junction depth formation and the value of threshold voltage during simulation. Optimized mesh grid is
obtained and tested for more accurate and faster simulation. Process parameter (such as oxide thicknesses
and Sheet resistance) as well as Device Parameter (such as linear gain “beta” and SPICE level 3 mobility
roll-off parameter “ Theta”) are extracted and investigated for further different applications.
KEYWORDS
Hot Carrier Effect(HCE), Technology Computer Aided Design(TCAD), N-Channel MOS (NMOS).
1. INTRODUCTION
Hot carriers are either holes or electrons that have gained very high kinetic energy after being
accelerated by a strong electric field in areas of high field intensities (near the drain) within a
semiconductor MOS device. They are injected into the oxide with enough energy to create defect
states (traps) in the oxide near the silicon/oxide interface [1] where they shouldn't be, forming a
space charge that causes the device to degrade or become unstable. The term 'hot carrier effects',
therefore, refers to device degradation or instability caused by hot carrier injection.
High field induced hot-carrier (HC) degradation affects reliability and causes long-term instability
[2][3], manifested by a threshold voltage increase and drive current reduction. It is found that
only hot electrons having energy of 0.6eV larger than the Si-SiO2 conduction band discontinuity
can cause SiO2 degradation in n-channel MOSFETs. The degradation is attributed to the breaking
of the ≡SiH bond at the interface [1][4]. Because of their high kinetic energy, hot carriers can
even get injected and trapped in areas of the device where they shouldn't be, forming a space
charge that causes the device to degrade or become unstable. The term 'hot carrier effects',
therefore, refers to device degradation or instability caused by hot carrier injection. Studies have
2. International Journal on Computational Sciences & Applications (IJCSA) Vol.4, No.3, June 2014
118
shown that the worst effects occur when VD = 2VG. These trapped charges shift some of the
characteristics of the device, such as its threshold voltage (Vth) and its conveyed conductance
(gm).
Thus, optimum design of devices to minimize, if not prevent, hot carrier effects is the best
solution for hot carrier problems. Common design techniques for preventing hot carrier effects
include: 1) increase in channel lengths; 2) n+ / n- double diffusion of sources and drains; 3) use
of graded drain junctions; 4) introduction of self-aligned n- regions between the channel and the
n+ junctions to create an offset gate; and 5) use of buried p+ channels. If we want to simulate the
optimal design of NMOS without HCE, all these techniques need a near perfect mesh grid design
with less computational time. We therefore proposed in this paper the study and optimal design of
this mesh grid using one of the standard TCAD tool Silvaco ATHENA and ATLAS.
2. MATHEMATICAL MODEL
Various models are used to describe HC degradation, of which the most widely adopted is the
‘lucky electron’ model, proposed by Shockley [5]. It is based on the assumption that only the hot
electrons accelerated by the electric field and not suffering collisions are most likely to cause
impact ionization. The probability of an electron obtaining enough energy Eb to surmount oxide
barrier, given an electric field E is [3][6] of the form PEb =exp( −Eb/qEl ). The probability of a
hot electron travelling a distance d arriving at the interface Si/SiO2 without suffering from energy
loss collisions is [7] of the form Pd = exp(−d/ l) , where l is the hot electron mean free path.
Consequently, the injection probability is proportional to the product of these two probabilities
[8][9],
Ig=C1IdPEbPd
where C1 is a fitting coefficient and Id is the drain current.
Performance degradation can become severe at elevated temperatures even at low fields. Negative
bias temperature instability (NBTI) is another very important reliability concern for contemporary
p-channel MOSFETs. The threshold voltage shift primarily depends on stress bias condition,
stress time and stress temperature. The observed power-law dependence on stress time [10][11] is
explained by the Si-SiO2 interface diffusion-reaction model [4]. This can be used to estimate the
threshold voltage shift due to NBTI [12], where Ea is a fitting parameter (the NBTI activation
energy) and C2 and γ are fitting coefficients.
The wide use of nitrogen in sub-2nm gate oxides is found to enhance NBTI [13]. NO gas
annealing leads to lower activation energy Ea and nitride oxides acquire more positively charged
traps during stress compared to the pure SiO2, which degrades the transistor lifetime by 2 to 3
decades. From a device design point of view, the suppression of the impact of nitrogen on NBTI
is an important concern. It is worth noting that the NBTI degradation is recoverable. While static
measurement of NBTI shows continuous degradation, pMOSFETs under dynamic stress
conditions undergo passivation/relaxation stages between stresses, and the threshold voltage
accordingly recovers after stress removal [14][15].
Greater HC degradation is observed in narrow-width MOSFETs with STI [16], although initial
impact ionization rate is not bigger than that of large channel width fresh devices. This effect is
ascribed to the increase of impact ionization rate and injection rate in narrow n-MOSFETs [16]
and a higher oxide electron trapping efficiency in narrow p-MOSFETs [17].
3. International Journal on Computational Sciences & Applications (IJCSA) Vol.4, No.3, June 2014
119
3. NMOS DEVICE SIMULATION
3.1. Methodology
Figure 1 .Schematic model of the proposed NMOS device
ATHENA predicts the physical structures that result from processing steps. The resulting physical
structures are used as input by ATLAS, which then predicts the electrical characteristics
associated with specified bias conditions. ATLAS is a physically-based device simulator.
Physically-based device simulators predict the electrical characteristics that are associated with
specified physical structures and bias conditions. This is achieved by approximating the operation
of a device onto a two or three dimensional grid, consisting of a number of grid points called
nodes.
By applying a set of differential equations, derived from Maxwells laws, onto this grid we can
simulate the transport of carriers through a structure. This means that the electrical performance
of a device can now be modelled in DC, AC or transient modes of operation. The Maxwell Laws
can be summarized as:
a) Divergence of electric flux from the control volume = Charge Density in the control volume
(Poisson’s Equation) or Divergence of electric flux = zero (Laplace’s Equation);
b) Divergence of electrons from a control volume = difference in generation rate and
recombination rate of electrons in the control volume;
c) Divergence of holes from a control volume = difference in generation rate and recombination
rate of holes in the control volume;
d) Total electron current density = drift electron flux density + diffusion electron flux density;
e) Total hole current density = drift hole flux density + diffusion hole flux density;
First three are coupled; non-linear second order partial differential equations and last two are
transport equations. Solution of these five equations gives the simulated predictions.
The intersections of the grid lines give the nodes. As shown in Fig.2(b), At node (i,j) there are
three unknowns vij , nij and pij .Initial intelligent guess is made of vij , nij and pij . Using these
values we solve the Poisson equations and the continuity equations for electron and holes until we
get converging results.
4. International Journal on Computational Sciences & Applications (IJCSA) Vol.4, No.3, June 2014
120
Figure 2 (a). Schematic view of a mesh cell containing a discrete dopant. The point charge of dopant is
assigned to those neighbouring nodes according to various charge assignment schemes. (b) Schematic view
of box discretization method in 2D. Vi is the box volume associated with grid i, Aij is the interface area
between boxes of i and j, and dij is the distance between i and j.
3.2. Transport equations
The governing equations of semiconductor carrier transport include the Poisson equation and
electron and hole continuity equations. The Poisson equation derives from Maxwell’s equations
and can be written in the form
trapad NNnpq +−+−==∇−∇ −+
)().(
where ε is the permittivity; φ is the electrostatic potential; ρ is the charge density, q is the
elementary electronic charge; n and p are electron and hole concentration; d N+ and a N− are the
ionized donor and acceptor concentrations; and ρ trap is the trap and fixed charge density.
The Poisson equation is solved self-consistently with the current continuity equations for
electrons and holes.
)(.
),(.
t
p
netp
t
n
netn
RqJ
RqJ
∂
∂
+−=∇
∂
∂
+=∇
which are deduced from 0/ =∂∂+⋅∇ tpJ obtained from Ampere’s circuital law. In equations,
Jn and Jp are current densities for electrons and holes and Rnet is the net electron hole
recombination rate.
Depending on the complexity of semiconductor structure and the carrier transport behavior,
different transport models can be chosen, usually based on various approximations to the full
Boltzmann transport equation. Models describe the current density with different degrees of
complexity and may include self-heating and carrier energy transport. The Drift-diffusion model
is one of the simplest approaches. It describes the current as a sum of two components describing
the drift of carriers under the influence of the electric field and diffusion driven by concentration
gradients.
nnnnn qnnqnqDJ ∇−=∇−∇=
5. International Journal on Computational Sciences & Applications (IJCSA) Vol.4, No.3, June 2014
121
ppppp qppqpqDJ ∇−=∇−∇=
where μn and μp is the electron and hole mobility; D is the diffusion coefficient which obeys
Einstein relation when the system is close to thermal equilibrium namely D = μ kT/q. Φn and Φp
are electron and hole quasi-Fermi potentials described as,
−=
i
in
n
n
q
kT
ln
+=
i
ip
n
p
q
kT
ln
Where ni is the intrinsic electron density, and φi = − Ei/ q is the electrostatic potential defined in
terms of the intrinsic Fermi level Ei..
3.3. Numerical methods of TCAD
Numerical methods are used to obtain solutions of the semiconductor equations described in the
previous section for devices with realistic geometries and doping concentrations. The equations
are discretised over a mesh or grid covering the device simulation domain using finite difference
or finite element techniques, resulting in large system of algebraic equations. In the case of the
box integration approach, which is a modification of the finite element approach, Gauss’s
theorem is used to transform the governing equations into the following integral form
0
1
0
1
0
=⋅+
+
∂
∂
=⋅−
+
∂
∂
=+⋅∇
∫∫
∫∫
∫ ∫
∂
∂
∂
dAJ
q
dVR
t
n
dAJ
q
dVR
t
n
dVdA
v
n
v
net
v
n
v
net
v v
The current densities are similarly discretised according to the neighbour grids. A single box in
the mesh for the set of discretized equations is shown in Fig.2(a).
The set of algebraic equations obtained is nonlinear, and Newton or Gummel procedures are used
for their linearization. The Gummel iteration method is well known for its stability There are two
methods for solving for these three unknowns: Coupled Method and Uncoupled Method or
Sequential Method. There are three advantages of physically-based simulation. It is predictive, it
provides insight, and it conveniently captures and visualizes theoretical knowledge. Physically-
based simulation is different from empirical modelling. The goal of empirical modelling is to
obtain analytic formulae that approximate existing data with good accuracy and minimum
complexity. Empirical models provide efficient approximation and interpolation. They do not
provide insight, or predictive capabilities, or encapsulation of theoretical knowledge.
Physically-based simulation has become very important for two reasons. One, it is almost always
much quicker and cheaper than performing experiments. Two, it provides information that is
difficult or impossible to measure.The drawbacks of physically-based simulation are that all the
relevant physics must be incorporated into a simulator, and numerical procedures must be
6. International Journal on Computational Sciences & Applications (IJCSA) Vol.4, No.3, June 2014
122
implemented to solve the associated equations. These tasks have been taken care of for users of
ATLAS.Those who use physically-based device simulation tools must specify the problem to be
simulated. In ATLAS, specify device simulation problems by defining:
• The physical structure to be simulated.
• The physical models to be used.
• The bias conditions for which electrical characteristics are to be simulated. An important point
to remember when using Technology Computer Aided Design (TCAD) is that the most critical
task is to accurately model the process flow.
For accurate MOSFET simulation, we should invest 90% of the time in achieving an accurate
process simulation, while only investing 10% of the time in fine-tuning the device simulation.
The reason for this, especially for silicon technologies, is that the device physics, in general, is
understood. For silicon, not only is the physics well understood, it is also well characterized, so
most of the default values in ATLAS will be correct. Therefore, the calibration of an ATHENA
process file does not involve the calibration of well known quantities such as diffusion
coefficients. Instead, the calibration involves variables that are process and production line
dependent. For example, the damage caused by an implant cannot be determined exactly, since it
is dose rate dependent and can be influenced by beam heating of the substrate, which is dependent
on the carousel rotation speed and the efficiency of the cooling system.
3.4. TCAD Simulation
Typical NMOS fabrication process steps are chosen from reference [19]. Structure of NMOS is
created based on half NMOS and structure manipulation is the process of reflecting the half
NMOS to have a full NMOS device. If the process has been correctly modelled, the device
simulation will also be accurate if appropriate models have been chosen. If a simulated device
exhibits electrical characteristics that are totally inaccurate, we may have done something wrong
in the process simulation.
Figure 3 Simulated NMOS model
The first important point is to ensure that we let the device simulator calculate the work function
of the gate electrode from the simulated doping profile rather than assigning a value to it. This
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means, making sure that the polysilicon gate is not itself defined as an electrode but rather a layer
of metal, usually aluminium, is deposited on top of the polysilicon gate. Therefore, this metal
layer is the film defined as the electrode. The effective work function of the poly gate will then be
correctly calculated from the doping profile in the polysilicon.
Figure 4 Net Doping profile in the model
Figure 5 Potential Profile developed in the model
An important area for accuracy in MOSFETs is modelling the inversion region under the gate. As
it is, this charge that is responsible for current conduction in the device. The inversion region
charge under the gate-only extends approximately 30 Angstroms into the silicon. The inversion
region charge density under the gate falls off rapidly with depth into the silicon. It is imperative
that there are several mesh points in the Y direction in this inversion region to model the drain
current correctly. Accordingly, we recommend that the mesh spacing under the gate be no more
than 10 Angstroms (1 nm).
We think that a 10 Angstrom mesh under the gate would result in a huge number of mesh points.
But, there only needs to be approximately three mesh points within the inversion region in the Y
direction. The grid spacing can increase rapidly in spacing away from the oxide-silicon interface.
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The simulated NMOS model of GRID1 is shown in Fig.3 along with corresponding Net doping
Profile in Fig.4 and potential profile in Fig.5.
4. RESULT AND DISCUSSION
We select the grid spacing given in Table 1 for our modelling and device optimization based on
previous standard model obtained from various recent published literatures. Both Fig. 6 and Fig.7
shows the effects of changing the mesh spacing at the interface on the simulated drain current.
We can see from this figure that too coarse of a mesh always results in too high of a current
simulated. The mesh grid effects to net doping is again observed by the relationship off the n++
and LDD sheet resistance in Fig.8. The optimization of the NMOS device was done
systematically by changing individual process parameters laid out by the ATHENA example [20]
and the resulting characteristics were studied. Like the channel doping, the type of atom being
implanted, the dosage and the energy of the implant all effect the resulting doping concentration
and depth of the implanted ions. Again the dosage can be modified to produce varying doping
concentrations in the light drain/source. An increase in the light drain/source doping greatly
increased the transconductance but had no affect on the threshold voltage.
Table 1 Six different GRID spacing needed for optimisation
GRID1 line y loc=0.2 spac=0.005
line y loc=0.5 spac=0.05
GRID2 line y loc=0.2 spac=0.010
line y loc=0.5 spac=0.05
GRID3 line y loc=0.2 spac=0.020
line y loc=0.5 spac=0.05
GRID4 line y loc=0.2 spac=0.040
line y loc=0.5 spac=0.05
GRID5 line y loc=0.2 spac=0.080
line y loc=0.5 spac=0.05
GRID6 line y loc=0.2 spac=0.160
line y loc=0.5 spac=0.05
Figure 6 The effect of grid changes in y-axis to transfer characteristic graph (Id-Vg plot)
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Figure 7 The effect of grid changes in y-axis to Net doping of the device [GRID1, GRID2, GRID3, GRID4
,GRID5 ,GRID6]
Figure 8 The effect of grid changes in y-axis to conductivity of polysilicon layer (LDD sheet resistance
graph)
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Table 2 The overall affect of the process parameters [18-19]
Threshold
Voltage
Transconductance
Increasing Mesh Grid
density
INCREASE DECREASE
Increasing Gate Oxide
Thickness
INCREASE
NCREASE
DECREASE
Increasing Channel
Doping
INCREASE
CREASE
NO CHANGE
Increasing light d/s
doping
NO CHANGE INCREASE
INCREASE
Increasing Heavy D/S
Doping
NO CHANGE INCREASE
INCREASE
Table 2 is used to compile the affects of each process parameter on the threshold voltage and
transconductance. The knowledge of these affects provides the means to optimize the NMOS
transistor to the desired characteristics. Fig. 9 also reveals the increased transconductance and
lower threshold voltage of the optimized device compared to the initial example. The optimized
device will provide a much higher switching speed (lower propagation delay) in the CMOS
digital logic inverter application over the original device.
Moreover, as we mentioned earlier that the doping concentration and depth of the implanted ions
(i.e. total net doping) is found to be greatly affected by the resolution of the device mesh grid as
seen in Fig. 7. And the optimal net doping design for LDD/graded drain junction NMOS is one of
the method to minimize Hot Carrier Effect. And in our optimal design, Hot Carrier Effect (HCE)
is found to be drastically reduced with the selecting of proper grid spacing/net doping indicated
by the reduction of threshold voltage and the increase in transconductance as seen in Fig.9 as
compared to the reference original model[20].Some important input parameters and extracted
output parameters are given in Table 3 and Table 4 respectively.
Figure 9 Original versus optimized device characteristics
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5. CONCLUSIONS
It is found that the Mesh grid parameter could give profound effect to the simulation process of
NMOS device. More coarser grid such as Grid 5 and Grid 6 have lower threshold voltage but
higher values of saturation currents while finer Grid 1, Grid 2, Grid 3 and Grid 4 have higher
threshold voltage with lower saturation current. Through our observations, Grid 2 and Grid 3
which is much denser and consumes longer time to complete simulation compare to Grid 4 is not
necessary to be used since Grid 4 will provide almost similar result. Again Grid 4 has lower
threshold voltage and good transconductance than other Grid configuration. Grid 4 therefore
should have minimum Hot Carrier Effect with acceptable net doping profile. It can be concluded
that the correct specification of grid is critical in process and device simulation. The number of
nodes in the grid has a direct influence on simulation accuracy and time. A finer grid should exist
in those areas of the simulation structure where ion implantation will occur to reduce HCE and
where p-n junction will formed to have accurate active region. And this net doping changes due to
mesh grid are more significant as y-axis changes compared with variation in x-axis grids.
ACKNOWLEDGEMENTS
Sincere gratitude to my supervisor Prof S.K Sarkar and Associate Prof. N.Basanta Singh. And
also thanks to the Spintronics/Low Power VLSI Device Lab, ETCE Dept. Jadavpur University
for providing the SILVACO TCAD Tools software.
APPENDIX
Table 3 Important constant parameters used in the design
Boltzmann's constant 1.38066e-023 J/K
Elementary charge 1.60219e-019 C
Permittivity in vacuum 8.85419e-014 F/cm
Temperature 300 K
Thermal voltage 0.025852 V
Epsilon 11.8
Eg (eV) 1.08
Chi (eV) 4.17
Nc (per cc) 2.8e+019
Nv (per cc) 1.04e+019
ni (per cc) 1.45e+010
Table 4 Extracted device parameters from the optimal model
n++ sheet rho 29.0937 ohm/square
ldd sheet rho 2176.85 ohm/square
chan surf conc 3.73448e+016 atoms/cm3
long channel Vt (n1dvt) 0.610618 V
Nvt 0.534383
Nbeta 0.00023928
Ntheta 0.131034
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ATHENA AND ATLAS CODE
go athena
line x loc=0.0 spac=0.1
line x loc=0.2 spac=0.006
line x loc=0.4 spac=0.006
line x loc=0.6 spac=0.01
line y loc=0.0 spac=0.002
# spac=0.005 to 1.60 variations
line y loc=0.2 spac=0.005
line y loc=0.5 spac=0.05
line y loc=0.8 spac=0.15
init orientation=100 c.phos=1e14 space.mul=2
diffus time=30 temp=1000 dryo2 press=1.00 hcl=3
etch oxide thick=0.02
implant boron dose=8e12 energy=100 pears
diffus temp=950 time=100 weto2 hcl=3
diffus time=50 temp=1000 t.rate=4.000 dryo2 press=0.10 hcl=3
diffus time=220 temp=1200 nitro press=1
etch oxide all
diffus time=20 temp=1000 dryo2 press=1 hcl=3
etch oxide all
diffus time=11 temp=925 dryo2 press=1.00 hcl=3
extract name="gateox" thickness oxide mat.occno=1 x.val=0.05
implant boron dose=9.5e11 energy=10 pearson
depo poly thick=0.2 divi=10
etch poly left p1.x=0.35
method fermi compress
diffuse time=3 temp=900 weto2 press=1.0
implant phosphor dose=3.0e13 energy=20 pearson
depo oxide thick=0.120 divisions=8
etch oxide dry thick=0.120
implant arsenic dose=5.0e15 energy=50 pearson
method fermi compress
diffuse time=1 temp=900 nitro press=1.0
etch oxide left p1.x=0.2
deposit alumin thick=0.03 divi=2
etch alumin right p1.x=0.18
extract name="nxj" xj silicon mat.occno=1 x.val=0.1junc.occno=1
extract name="n++ sheet rho" sheet.res material="Silicon" mat.occno=1 x.val=0.05 region.occno=1
extract name="ldd sheet rho" sheet.res material="Silicon"
mat.occno=1 x.val=0.3 region.occno=1
extract name="chan surf conc" surf.conc impurity="Net Doping"
material="Silicon" mat.occno=1 x.val=0.45
extract start material="Polysilicon" mat.occno=1
bias=0.0 bias.step=0.2 bias.stop=2 x.val=0.45
extract done name="sheet cond v bias"
curve(bias,1dn.conduct material="Silicon" mat.occno=1 region.occno=1)
outfile="extract1.dat"
extract name="n1dvt" 1dvt ntype vb=0.0 qss=1e10 x.val=0.49
structure mirror right
electrode name=gate x=0.5 y=0.1
electrode name=source x=0.1
electrode name=drain x=1.1
electrode name=substrate backside
structure outfile=NMOS_GRID1.str
tonyplot NMOS_GRID1.str -set nmos_nd.set
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129
go atlas
models cvt srh print
contact name=gate n.poly
interface qf=3e10
method newton
solve init
solve vdrain=0.1
log outf=NMOS_GRID1.log master
solve vgate=0 vstep=0.25 vfinal=3.0 name=gate
save outf=NMOS_GRID1.str
tonyplot NMOS_GRID1.log -set nmos_log.set
extract device parameters
extract name="nvt" (xintercept(maxslope(curve(abs(v."gate"),abs(i."drain"))))
- abs(ave(v."drain"))/2.0)
extract name="nbeta" slope(maxslope(curve(abs(v."gate"),abs(i."drain"))))
* (1.0/abs(ave(v."drain")))
extract name="ntheta" ((max(abs(v."drain")) * $"nbeta")/max(abs(i."drain")))
- (1.0 / (max(abs(v."gate")) - ($"nvt")))
quit
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Authors
Khomdram Jolson Singh is Assistant Prof.(ECE Dept.) MIT Imphal, Manipur University.
(India).
Terirama Thingujam is a student of ECE Dept, Manipur Institute of Technology, Imphal
(India).
Laishram Bidyapati Devi is Assistant Prof.(ECE Dept.), MIT Imphal, Manipur University.
(India).
Nameirakpam Basanta Singh is Associate Professor MIT Imphal, Manipur University,
(India).Member, IEEE
Subir Kumar Sarkar is Professor (ETCE Dept.), Jadavpur University, (India). Senior
Member, IEEE