Engineering physics 6(Band theory of solids)
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This document discusses the band theory of solids. It explains that in crystals, the energy levels of atoms are not well-defined as in isolated atoms, due to interactions between neighboring atoms. As silicon atoms are brought closer together from a distance, their energy levels first split and then merge into bands as the interatomic distance reaches the actual separation in the crystal. Specifically, the 4s, 4p, and 3d electron levels of silicon atoms combine to form the valence and conduction bands, separated by a forbidden energy gap.
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In 3 sentences:
Semiconductors have electrical properties between metals and insulators, with conductivities from 10-4 to 104 S/m. Their crystal structure leads to electrons being able to move between valence and conduction bands, making semiconductors bipolar with both electrons and holes conducting. Semiconductors are classified as intrinsic, with equal electron and hole concentrations determined by temperature, or extrinsic with additional carriers from dopant impurities making them either n-type or p-type.
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Engineering physics 6(Band theory of solids)
- 1. 1 ENGINEERING PHYSICS Mr. Gouri Kumar Sahu Sr. Lecturer in Physics. 1 ENGINEERING PHYSICS Mr. Gouri Kumar Sahu Sr. Lecturer in Physics. ENGINERING PHYSICSENGINERING PHYSICSENGINERING PHYSICSENGINERING PHYSICSENGINERING PHYSICSENGINERING PHYSICSENGINERING PHYSICSENGINERING PHYSICS Mr. Gouri Kumar Sahu Senior Lecturer in Physics C.U. T. M.
- 2. 2 ENGINEERING PHYSICS Mr. Gouri Kumar Sahu Sr. Lecturer in Physics. 2 ENGINEERING PHYSICS Mr. Gouri Kumar Sahu Sr. Lecturer in Physics. SESSION-7 7.1 Band theory of solids In a single free atom, the energy levels of electrons are well defined In crystals the atoms do not have well defined energy levels, as in crystal there are large number of atoms, interaction takes place between neighboring levels which will modify the energy levels. consider the case of silicon atom Atomic number 14 configuration 1s2., 2s2, 2p6, 3s2, 3p2. The outer most shell containing 4 electrons and 4 vacant spaces.
- 3. 3 ENGINEERING PHYSICS Mr. Gouri Kumar Sahu Sr. Lecturer in Physics. 3 ENGINEERING PHYSICS Mr. Gouri Kumar Sahu Sr. Lecturer in Physics. SESSION-7 7.1 Band theory of solids Suppose interatomic separation between the silicon atoms = ‘a’ Let the atoms are brought from locations r>>a to their actual location [a] When r=d1; energy levels are well defined [b]When r=d2: Splitting of energy level takes place. The 2N s level will not have same energy but will spread in a small energy band, similarly 6N p levels will split into energy band,.
- 4. 4 ENGINEERING PHYSICS Mr. Gouri Kumar Sahu Sr. Lecturer in Physics. 4 ENGINEERING PHYSICS Mr. Gouri Kumar Sahu Sr. Lecturer in Physics. SESSION-7 7.1 Band theory of solids [c] When r=d3 , Energy gap between 3s and 3p level completely disappears and all 8N levels are continuously distributed in an energy band. There are 8N energy levels with 4N levels filled and 4N levels empty. [d] When r=a =actual interatomic separation a, the 8N levels splits into 2 bands, the 4N filled energy level forming valance band and the 4N empty energy levels forming conduction band. The energy difference between valance and conduction band is called forbidden energy gap.
- 5. 5 ENGINEERING PHYSICS Mr. Gouri Kumar Sahu Sr. Lecturer in Physics. 5 ENGINEERING PHYSICS Mr. Gouri Kumar Sahu Sr. Lecturer in Physics. END OF SESSION -7 SESSION-7 THANK YOU