This document provides a question bank on the topic of engineering physics for a bachelor's degree program. It includes 70 questions across three sections - short answer, descriptive, and problems. The short answer section contains multiple choice and short response questions testing concepts like band structure of materials, Hall effect, semiconductors, and superconductors. The descriptive section asks students to explain key theories and differentiate between material types. The problems section provides calculations testing conductivity, mobility, drift velocity, and other quantitative applications of the theoretical concepts.
Engineering Physics - II second semester Anna University lecturer notes24x7house
This document provides an overview of conducting materials and classical free electron theory of metals. It discusses key concepts such as conductors, insulators, semiconductors, free electrons, drift velocity, electric field, current density, Fermi level, density of states, and work function. The classical free electron theory proposes that metals consist of free electrons that move randomly and conduct electricity. It can explain several electrical and thermal properties but has limitations and fails to explain newer phenomena, leading to the development of quantum free electron theory.
Physics; presentation electrostat; -harsh kumar;- xii science; -roll no 08Harsh Kumar
This presentation summarizes key concepts in electrostatics, including:
1. Electrostatics is the study of electrical properties of systems with charges at rest. Charge is a fundamental property that explains electrical behavior and can be positive or negative.
2. Coulomb's law describes the attractive force between two point charges, directly proportional to the product of charges and inversely proportional to the square of the distance between them.
3. Electric field intensity is defined as the force experienced by a unit positive charge at a point in an electric field. Gauss's law relates the electric flux through a closed surface to the net charge enclosed.
This document provides lecture notes on engineering physics for an engineering course. It covers topics on atomic structure, electronic configurations, electrical conduction, and electron theories of metals. The document begins with an introduction to atomic structure, including the components of atoms and Madelung's and Hund's rules for electron configuration. It then discusses electrical conduction, defining terms like resistivity, conductivity, and classifications of materials. The remainder of the document covers electron theories of metals, including classical free electron theory, quantum free electron theory, and band theory. Key concepts from each theory are summarized.
This document discusses the Drude model for explaining the optical and electric properties of metals using a free electron gas model. It describes how the Drude model relates the dielectric constant of metals to oscillations of free electrons in response to an applied electromagnetic field. It defines key terms like plasma frequency, damping frequency, and presents equations for the real and imaginary components of the dielectric function and how they describe polarization and energy dissipation in metals. Graphs are shown depicting how the real part of permittivity is negative at lower frequencies but becomes zero near the plasma frequency.
This document provides an overview of the key topics in Unit 3 of the Applied Physics course. The unit covers:
1. Classical and quantum free electron theories of metals, including the Drude-Lorentz model and Sommerfeld's quantum model.
2. Mean free path, relaxation time, and drift velocity of electrons in metals.
3. The Fermi level and Fermi-Dirac distribution of electron energies.
4. Classification of materials as insulators, semiconductors, or conductors based on their band structure and energy gaps.
The document discusses Sommerfeld's free electron model of metallic conduction. It explains that in this model, each free electron inside a metal experiences both an attractive electrostatic force from the positive ions and a repulsive force from other electrons. The model also assumes the positive ion lattice produces a uniform attractive potential field for electrons. The potential field must be periodic to match the crystal structure of the solid metal. The model provides explanations for electrical conductivity, heat capacity, and thermal conductivity of metals but fails to account for differences between conductor and insulator behaviors.
Properties of solids (solid state) by Rawat's JFCRawat DA Greatt
The document summarizes the key electrical, magnetic, and dielectric properties of solids. It discusses how solids can be classified as conductors, insulators, or semiconductors based on their electrical conductivity. Semiconductors are further classified as intrinsic or extrinsic, with n-type and p-type extrinsic semiconductors discussed. Magnetic properties are also summarized, classifying materials as diamagnetic, paramagnetic, ferromagnetic, antiferromagnetic, or ferrimagnetic based on their behavior in magnetic fields. Finally, dielectric properties including piezoelectricity, pyroelectricity, ferroelectricity, and antiferroelectricity are briefly defined.
Semiconductor theory describes how small amounts of impurities can be added to intrinsic semiconductors to create n-type and p-type materials. N-type semiconductors are created by adding elements with extra electrons, while p-type are created by adding elements with electron deficiencies. The junction between a p-type and n-type material allows current to flow in only one direction, forming the basis for important semiconductor devices such as diodes, transistors, and solar cells.
Engineering Physics - II second semester Anna University lecturer notes24x7house
This document provides an overview of conducting materials and classical free electron theory of metals. It discusses key concepts such as conductors, insulators, semiconductors, free electrons, drift velocity, electric field, current density, Fermi level, density of states, and work function. The classical free electron theory proposes that metals consist of free electrons that move randomly and conduct electricity. It can explain several electrical and thermal properties but has limitations and fails to explain newer phenomena, leading to the development of quantum free electron theory.
Physics; presentation electrostat; -harsh kumar;- xii science; -roll no 08Harsh Kumar
This presentation summarizes key concepts in electrostatics, including:
1. Electrostatics is the study of electrical properties of systems with charges at rest. Charge is a fundamental property that explains electrical behavior and can be positive or negative.
2. Coulomb's law describes the attractive force between two point charges, directly proportional to the product of charges and inversely proportional to the square of the distance between them.
3. Electric field intensity is defined as the force experienced by a unit positive charge at a point in an electric field. Gauss's law relates the electric flux through a closed surface to the net charge enclosed.
This document provides lecture notes on engineering physics for an engineering course. It covers topics on atomic structure, electronic configurations, electrical conduction, and electron theories of metals. The document begins with an introduction to atomic structure, including the components of atoms and Madelung's and Hund's rules for electron configuration. It then discusses electrical conduction, defining terms like resistivity, conductivity, and classifications of materials. The remainder of the document covers electron theories of metals, including classical free electron theory, quantum free electron theory, and band theory. Key concepts from each theory are summarized.
This document discusses the Drude model for explaining the optical and electric properties of metals using a free electron gas model. It describes how the Drude model relates the dielectric constant of metals to oscillations of free electrons in response to an applied electromagnetic field. It defines key terms like plasma frequency, damping frequency, and presents equations for the real and imaginary components of the dielectric function and how they describe polarization and energy dissipation in metals. Graphs are shown depicting how the real part of permittivity is negative at lower frequencies but becomes zero near the plasma frequency.
This document provides an overview of the key topics in Unit 3 of the Applied Physics course. The unit covers:
1. Classical and quantum free electron theories of metals, including the Drude-Lorentz model and Sommerfeld's quantum model.
2. Mean free path, relaxation time, and drift velocity of electrons in metals.
3. The Fermi level and Fermi-Dirac distribution of electron energies.
4. Classification of materials as insulators, semiconductors, or conductors based on their band structure and energy gaps.
The document discusses Sommerfeld's free electron model of metallic conduction. It explains that in this model, each free electron inside a metal experiences both an attractive electrostatic force from the positive ions and a repulsive force from other electrons. The model also assumes the positive ion lattice produces a uniform attractive potential field for electrons. The potential field must be periodic to match the crystal structure of the solid metal. The model provides explanations for electrical conductivity, heat capacity, and thermal conductivity of metals but fails to account for differences between conductor and insulator behaviors.
Properties of solids (solid state) by Rawat's JFCRawat DA Greatt
The document summarizes the key electrical, magnetic, and dielectric properties of solids. It discusses how solids can be classified as conductors, insulators, or semiconductors based on their electrical conductivity. Semiconductors are further classified as intrinsic or extrinsic, with n-type and p-type extrinsic semiconductors discussed. Magnetic properties are also summarized, classifying materials as diamagnetic, paramagnetic, ferromagnetic, antiferromagnetic, or ferrimagnetic based on their behavior in magnetic fields. Finally, dielectric properties including piezoelectricity, pyroelectricity, ferroelectricity, and antiferroelectricity are briefly defined.
Semiconductor theory describes how small amounts of impurities can be added to intrinsic semiconductors to create n-type and p-type materials. N-type semiconductors are created by adding elements with extra electrons, while p-type are created by adding elements with electron deficiencies. The junction between a p-type and n-type material allows current to flow in only one direction, forming the basis for important semiconductor devices such as diodes, transistors, and solar cells.
This document provides an overview of semiconductor theory and devices. It begins by introducing the three categories of solids based on electrical conductivity: conductors, semiconductors, and insulators. It then discusses band theory, which models the allowed energy states in solids as continuous bands separated by forbidden gaps. Semiconductors are defined as having energy gaps small enough for thermal excitation of electrons between bands. The document covers models like the Kronig-Penney model that explain energy gaps. It also discusses how temperature affects resistivity in semiconductors by increasing the number of electrons excited into the conduction band.
This document discusses electrical conductivity in various materials. It begins by explaining that metals are good conductors due to their large number of free electrons. Semiconductors have lower conductivity than metals due to their lower concentration of free charge carriers. Conductivity in nonmetals like ionic crystals and glasses depends on mobile charges like electrons and ions. The document then discusses how conductivity varies with temperature in nonmetals. It also covers the skin effect in conductors at high frequencies and conductivity considerations in thin metal films. The document concludes by discussing copper interconnects in microelectronics.
The document summarizes key concepts in atomic structure:
- John Dalton proposed atoms as the smallest indivisible particles containing electrons, protons and neutrons.
- Rutherford's nuclear model presented atoms as mostly empty space with a dense positively charged nucleus.
- Bohr's model improved on this by proposing electrons orbit in fixed shells with discrete energies, explaining atomic spectra.
- Planck and Einstein established the particle-like nature of electromagnetic radiation as photons.
This document provides an overview of electrical properties of materials. It discusses how electrons move in different materials and the relationship between carrier density and mobility. Metals are good conductors due to their high number of free electrons. Semiconductors and insulators have lower conductivity since electrons must jump across a band gap. The document outlines band theory, explaining how energy bands arise from the interaction of atomic orbitals. Metals have partially filled or overlapping bands, allowing conduction, while semiconductors and insulators have filled valence bands separated from empty conduction bands by a band gap. Electrical properties depend on carrier concentration and mobility, with metals having high values of both.
Ph8253 physics for electronics engineeringSindiaIsac
1) The document discusses conducting materials and their properties. It describes how metals have high electrical conductivity due to free electrons. Current density is defined as the current per unit area.
2) Conducting materials are classified as zero resistive, low resistive, or high resistive based on their conductivity. Zero resistive materials conduct electricity with almost zero resistance below a transition temperature. Low and high resistive materials are used for conductors and resistors.
3) The classical free electron theory and quantum free electron theory are discussed as ways to explain electrical conductivity in metals based on their electronic structure and behavior of free electrons.
This document provides an overview of atomic physics, including:
1. Models of the atom including Rutherford and Bohr models, and explanations of atomic energy levels and quantum numbers.
2. Quantum physics concepts including Planck's quantum theory, Einstein's theories of light and the photoelectric effect, and de Broglie's hypothesis of matter waves.
3. Lasers including production of laser light, properties, types, and applications.
4. Nuclear physics including structure of the nucleus, radioactive decay, nuclear stability, fission and fusion processes, and applications of nuclear technology.
The document summarizes the transition from traditional transistors to carbon nanotube transistors. It begins by discussing the basic components of traditional transistors, including semiconductors, diodes, and the first transistors invented - point contact transistors. It then reviews the development of metal oxide semiconductor field effect transistors (MOSFETs), which improved on earlier designs. The document concludes by stating that carbon nanotube transistors represent the future of transistors, though it does not provide details about their properties or operation.
Chapter3 introduction to the quantum theory of solidsK. M.
The document provides an introduction to the quantum theory of solids, including:
1. How allowed and forbidden energy bands form in solids due to the interaction of atomic electron wave functions when atoms are brought close together in a crystal lattice.
2. Electrical conduction in solids is explained using the concept of electron effective mass and holes, within the framework of the energy band model.
3. The Kronig-Penney model is used to quantitatively relate the energy, wave number, and periodic potential within a solid, resulting in allowed and forbidden energy bands.
This document discusses band theory and several models used to describe electron behavior in solids, including the free electron model, nearly free electron model, and tight binding model. It provides an overview of each model, including their assumptions and how they describe properties like electron energy and band gaps. The free electron model treats electrons as independent particles but fails to explain material properties. The nearly free electron model incorporates a periodic potential and allows electron wavefunctions and energy bands to be described. The tight binding model uses a superposition of atomic orbitals to approximate electron wavefunctions in solids where potential is strong.
Interatomic forces present in atomic bonding can predict many physical properties of materials such as melting temperature, elasticity, thermal expansion, and strength. These interatomic forces include attractive and repulsive forces that are functions of interatomic distance, and determine the bonding energy between atoms when they form bonds. Different types of bonding like ionic, covalent, metallic, and secondary bonding are characterized by different bonding energies and influence material properties.
This document summarizes the key electrical properties of metals and semiconductors. It discusses Ohm's law and how electrical conductivity in metals is influenced by drift velocity and current density. It also explains how resistivity is related to temperature in metals. For semiconductors, it describes the band structure of insulators, metals and semiconductors and how conductivity varies with intrinsic carrier concentration and temperature in intrinsic semiconductors. It then discusses the effects of doping on carrier concentrations and conductivity in n-type and p-type extrinsic semiconductors. Finally, it provides an overview of compound semiconductors made of two or three elements.
This document provides an introduction to semiconductor materials. It discusses the key characteristics of conductors, insulators, and semiconductors. Semiconductors are materials that can be conditioned to act as good conductors, insulators, or anything in between depending on doping. Common semiconductors include silicon, carbon, and germanium. The document explains how semiconductor atoms can link together to form a crystal lattice structure. It also describes how intrinsic semiconductors have equal numbers of electrons and holes, while extrinsic semiconductors are doped with impurities to create an excess or deficiency of one carrier type, making them either n-type or p-type semiconductors. Key concepts covered
The document summarizes Bohr's atomic model and developments that followed. It discusses:
1) Bohr's postulates that electrons orbit in discrete orbits with angular momentum an integer multiple of Planck's constant and atoms emit photons when electrons jump orbits.
2) Spectral series of hydrogen and critical, excitation, and ionization potentials.
3) Sommerfeld extended Bohr's model to elliptical orbits and relativistic electron mass.
4) Vector atomic model introduced spatial quantization and electron spin, with quantum numbers like orbital and spin to describe electron states.
This Presentation "Energy band theory of solids" will help you to Clarify your doubts and Enrich your Knowledge. Kindly use this presentation as a Reference and utilize this presentation
The document discusses the transition from discrete atomic energy levels to energy bands in crystalline solids. As atoms come together to form a crystal lattice, the discrete energy levels of individual atoms broaden and overlap, forming continuous bands of allowed energies separated by forbidden gaps. Electrons near the top of the valence band can be excited into the conduction band, where they behave as free particles able to move through the solid and conduct electricity. Covalent bonding between atoms is also explained using the concept of energy bands.
This document provides an introduction and syllabus for a module on electrical properties and free electron theory. It discusses key concepts from classical and quantum free electron theory, including postulates, failures of the classical theory, the importance of Fermi energy, and advantages of the quantum theory. Example questions are also provided to test comprehension of topics like thermal velocity, root mean square velocity, and the effects of temperature on conductivity.
This document discusses energy bands in solids and semiconductor devices. It explains how the discrete energy levels in isolated atoms merge and form continuous energy bands as atoms are brought together in a solid. In semiconductors, the valence band is full while the conduction band is empty, with a small band gap between them. Thermally excited electrons can cross this gap, making semiconductors weakly conductive. Doping a semiconductor with impurities introduces donors or acceptors that increase the number of free electrons or holes, making it an n-type or p-type extrinsic semiconductor. The carrier concentrations and conductivity of semiconductors are determined by factors like doping level, temperature, and carrier mobilities.
The document outlines the syllabus for a semiconductor subject. It includes 15 chapters that cover topics like crystal structure of solids, quantum mechanics, equilibrium carrier transport, pn junctions, bipolar transistors, MOSFETs, and optical and power devices. It also provides details on some key concepts for semiconductors like electrical conductivity and resistivity. Examples are given for different crystal structures including simple cubic, body-centered cubic, and face-centered cubic lattices. Miller indices are introduced for representing crystal planes.
This document provides an overview of electronic band structure and Bloch theory in solid state physics. It discusses the differences between the Sommerfeld and Bloch approaches to modeling electron behavior in periodic solids. Key points include:
- Bloch's treatment models electrons using band indices and crystal momentum rather than just momentum.
- Bloch states follow classical dynamics on average, with crystal momentum replacing ordinary momentum.
- The band structure determines allowed electron energies and velocities for a given crystal momentum.
- Bloch's theory accounts for periodic potentials within the crystal lattice, allowing for band gaps and a more accurate description of electron behavior in solids.
This document summarizes the electronic, thermal, and mechanical properties of carbon nanotubes. It discusses their cylindrical structure and how this leads to novel properties. Carbon nanotubes have extraordinary strength and stiffness, with some having a tensile strength over 60 times greater than steel. They are also highly thermally conductive and can transport heat more efficiently than copper. Carbon nanotubes can be metallic or semiconducting depending on their structure, and this quantum confinement of electrons leads to unique electrical properties including ballistic conduction. Their structure also results in sharp optical transitions that can be used to identify different nanotube types.
This document provides an overview of semiconductor theory and devices. It begins by introducing the three categories of solids based on electrical conductivity: conductors, semiconductors, and insulators. It then discusses band theory, which models the allowed energy states in solids as continuous bands separated by forbidden gaps. Semiconductors are defined as having energy gaps small enough for thermal excitation of electrons between bands. The document covers models like the Kronig-Penney model that explain energy gaps. It also discusses how temperature affects resistivity in semiconductors by increasing the number of electrons excited into the conduction band.
This document discusses electrical conductivity in various materials. It begins by explaining that metals are good conductors due to their large number of free electrons. Semiconductors have lower conductivity than metals due to their lower concentration of free charge carriers. Conductivity in nonmetals like ionic crystals and glasses depends on mobile charges like electrons and ions. The document then discusses how conductivity varies with temperature in nonmetals. It also covers the skin effect in conductors at high frequencies and conductivity considerations in thin metal films. The document concludes by discussing copper interconnects in microelectronics.
The document summarizes key concepts in atomic structure:
- John Dalton proposed atoms as the smallest indivisible particles containing electrons, protons and neutrons.
- Rutherford's nuclear model presented atoms as mostly empty space with a dense positively charged nucleus.
- Bohr's model improved on this by proposing electrons orbit in fixed shells with discrete energies, explaining atomic spectra.
- Planck and Einstein established the particle-like nature of electromagnetic radiation as photons.
This document provides an overview of electrical properties of materials. It discusses how electrons move in different materials and the relationship between carrier density and mobility. Metals are good conductors due to their high number of free electrons. Semiconductors and insulators have lower conductivity since electrons must jump across a band gap. The document outlines band theory, explaining how energy bands arise from the interaction of atomic orbitals. Metals have partially filled or overlapping bands, allowing conduction, while semiconductors and insulators have filled valence bands separated from empty conduction bands by a band gap. Electrical properties depend on carrier concentration and mobility, with metals having high values of both.
Ph8253 physics for electronics engineeringSindiaIsac
1) The document discusses conducting materials and their properties. It describes how metals have high electrical conductivity due to free electrons. Current density is defined as the current per unit area.
2) Conducting materials are classified as zero resistive, low resistive, or high resistive based on their conductivity. Zero resistive materials conduct electricity with almost zero resistance below a transition temperature. Low and high resistive materials are used for conductors and resistors.
3) The classical free electron theory and quantum free electron theory are discussed as ways to explain electrical conductivity in metals based on their electronic structure and behavior of free electrons.
This document provides an overview of atomic physics, including:
1. Models of the atom including Rutherford and Bohr models, and explanations of atomic energy levels and quantum numbers.
2. Quantum physics concepts including Planck's quantum theory, Einstein's theories of light and the photoelectric effect, and de Broglie's hypothesis of matter waves.
3. Lasers including production of laser light, properties, types, and applications.
4. Nuclear physics including structure of the nucleus, radioactive decay, nuclear stability, fission and fusion processes, and applications of nuclear technology.
The document summarizes the transition from traditional transistors to carbon nanotube transistors. It begins by discussing the basic components of traditional transistors, including semiconductors, diodes, and the first transistors invented - point contact transistors. It then reviews the development of metal oxide semiconductor field effect transistors (MOSFETs), which improved on earlier designs. The document concludes by stating that carbon nanotube transistors represent the future of transistors, though it does not provide details about their properties or operation.
Chapter3 introduction to the quantum theory of solidsK. M.
The document provides an introduction to the quantum theory of solids, including:
1. How allowed and forbidden energy bands form in solids due to the interaction of atomic electron wave functions when atoms are brought close together in a crystal lattice.
2. Electrical conduction in solids is explained using the concept of electron effective mass and holes, within the framework of the energy band model.
3. The Kronig-Penney model is used to quantitatively relate the energy, wave number, and periodic potential within a solid, resulting in allowed and forbidden energy bands.
This document discusses band theory and several models used to describe electron behavior in solids, including the free electron model, nearly free electron model, and tight binding model. It provides an overview of each model, including their assumptions and how they describe properties like electron energy and band gaps. The free electron model treats electrons as independent particles but fails to explain material properties. The nearly free electron model incorporates a periodic potential and allows electron wavefunctions and energy bands to be described. The tight binding model uses a superposition of atomic orbitals to approximate electron wavefunctions in solids where potential is strong.
Interatomic forces present in atomic bonding can predict many physical properties of materials such as melting temperature, elasticity, thermal expansion, and strength. These interatomic forces include attractive and repulsive forces that are functions of interatomic distance, and determine the bonding energy between atoms when they form bonds. Different types of bonding like ionic, covalent, metallic, and secondary bonding are characterized by different bonding energies and influence material properties.
This document summarizes the key electrical properties of metals and semiconductors. It discusses Ohm's law and how electrical conductivity in metals is influenced by drift velocity and current density. It also explains how resistivity is related to temperature in metals. For semiconductors, it describes the band structure of insulators, metals and semiconductors and how conductivity varies with intrinsic carrier concentration and temperature in intrinsic semiconductors. It then discusses the effects of doping on carrier concentrations and conductivity in n-type and p-type extrinsic semiconductors. Finally, it provides an overview of compound semiconductors made of two or three elements.
This document provides an introduction to semiconductor materials. It discusses the key characteristics of conductors, insulators, and semiconductors. Semiconductors are materials that can be conditioned to act as good conductors, insulators, or anything in between depending on doping. Common semiconductors include silicon, carbon, and germanium. The document explains how semiconductor atoms can link together to form a crystal lattice structure. It also describes how intrinsic semiconductors have equal numbers of electrons and holes, while extrinsic semiconductors are doped with impurities to create an excess or deficiency of one carrier type, making them either n-type or p-type semiconductors. Key concepts covered
The document summarizes Bohr's atomic model and developments that followed. It discusses:
1) Bohr's postulates that electrons orbit in discrete orbits with angular momentum an integer multiple of Planck's constant and atoms emit photons when electrons jump orbits.
2) Spectral series of hydrogen and critical, excitation, and ionization potentials.
3) Sommerfeld extended Bohr's model to elliptical orbits and relativistic electron mass.
4) Vector atomic model introduced spatial quantization and electron spin, with quantum numbers like orbital and spin to describe electron states.
This Presentation "Energy band theory of solids" will help you to Clarify your doubts and Enrich your Knowledge. Kindly use this presentation as a Reference and utilize this presentation
The document discusses the transition from discrete atomic energy levels to energy bands in crystalline solids. As atoms come together to form a crystal lattice, the discrete energy levels of individual atoms broaden and overlap, forming continuous bands of allowed energies separated by forbidden gaps. Electrons near the top of the valence band can be excited into the conduction band, where they behave as free particles able to move through the solid and conduct electricity. Covalent bonding between atoms is also explained using the concept of energy bands.
This document provides an introduction and syllabus for a module on electrical properties and free electron theory. It discusses key concepts from classical and quantum free electron theory, including postulates, failures of the classical theory, the importance of Fermi energy, and advantages of the quantum theory. Example questions are also provided to test comprehension of topics like thermal velocity, root mean square velocity, and the effects of temperature on conductivity.
This document discusses energy bands in solids and semiconductor devices. It explains how the discrete energy levels in isolated atoms merge and form continuous energy bands as atoms are brought together in a solid. In semiconductors, the valence band is full while the conduction band is empty, with a small band gap between them. Thermally excited electrons can cross this gap, making semiconductors weakly conductive. Doping a semiconductor with impurities introduces donors or acceptors that increase the number of free electrons or holes, making it an n-type or p-type extrinsic semiconductor. The carrier concentrations and conductivity of semiconductors are determined by factors like doping level, temperature, and carrier mobilities.
The document outlines the syllabus for a semiconductor subject. It includes 15 chapters that cover topics like crystal structure of solids, quantum mechanics, equilibrium carrier transport, pn junctions, bipolar transistors, MOSFETs, and optical and power devices. It also provides details on some key concepts for semiconductors like electrical conductivity and resistivity. Examples are given for different crystal structures including simple cubic, body-centered cubic, and face-centered cubic lattices. Miller indices are introduced for representing crystal planes.
This document provides an overview of electronic band structure and Bloch theory in solid state physics. It discusses the differences between the Sommerfeld and Bloch approaches to modeling electron behavior in periodic solids. Key points include:
- Bloch's treatment models electrons using band indices and crystal momentum rather than just momentum.
- Bloch states follow classical dynamics on average, with crystal momentum replacing ordinary momentum.
- The band structure determines allowed electron energies and velocities for a given crystal momentum.
- Bloch's theory accounts for periodic potentials within the crystal lattice, allowing for band gaps and a more accurate description of electron behavior in solids.
This document summarizes the electronic, thermal, and mechanical properties of carbon nanotubes. It discusses their cylindrical structure and how this leads to novel properties. Carbon nanotubes have extraordinary strength and stiffness, with some having a tensile strength over 60 times greater than steel. They are also highly thermally conductive and can transport heat more efficiently than copper. Carbon nanotubes can be metallic or semiconducting depending on their structure, and this quantum confinement of electrons leads to unique electrical properties including ballistic conduction. Their structure also results in sharp optical transitions that can be used to identify different nanotube types.
This document appears to be an exam for a physics course in Egypt. It consists of 5 questions with multiple parts each. Question 1 involves circuits, electromagnetism, and factors affecting various physical properties. Question 2 covers concepts like work functions, transistors, magnetism, and galvanometers. Question 3 has multiple choice and diagram questions on topics like circuits, thermodynamics, and photons. Question 4 asks about materials properties and circuit behavior. Question 5 compares different physical phenomena and concepts. The document provides context for a physics exam, covering a wide range of topics through multiple question formats.
This document outlines topics and group presentations for a PHY 1101 class at Barishal Engineering College. The topics include modern physics, electricity and magnetism, and mechanics. Several student groups are assigned presentation topics related to these subjects, such as photoelectric effect, Heisenberg uncertainty principle, de Broglie equation, radioactive decay law, Gauss's law, and more. The document lists the names and student IDs of group members and their assigned presentation topics.
This document contains a sample physics question paper for Class 12 with 26 questions across 5 sections (A-E). It provides general instructions, details of questions in each section, and values of important physical constants. Section A contains 5 one-mark questions, Section B has 5 two-mark questions, Section C has 12 three-mark questions, Section D has 1 four-mark question and Section E contains 3 five-mark questions. The document tests students' understanding of concepts in electricity, magnetism, electromagnetic waves, optics, modern physics and electronics.
The document provides instructions and questions for an end of semester exam for a Diploma in Medical Imaging Science course. The exam covers topics in medical physics and chemistry including forces, energy, vectors, radiation intensity, stress, transformers, temperature conversions, geometrical unsharpness, impedance, electrostatics, magnetism, semiconductors, peak factor, and absorption coefficient. It contains three sections with multiple choice and written response questions testing understanding of these key concepts.
This document contains physics examination papers from 2008-2012 administered by the Central Board of Secondary Education (CBSE) in Delhi, India. It lists the contents which include CBSE examination papers from Delhi and All India in those years, as well as foreign papers. A sample paper from the 2008 Delhi exam is then provided, consisting of 30 multiple choice questions testing concepts in physics.
This document provides conceptual problems and questions about solids and the theory of conduction. It includes:
1. Questions about how energy is lost by electrons colliding with ions and how this appears as Joule heat.
2. Questions about the resistivity of brass and copper at low temperatures being due to residual resistance from impurities.
3. Problems involving calculating contact potentials between different metals using their work functions.
4. Additional conceptual questions about properties of conductors, insulators, semiconductors and how doping affects conduction.
Physics Sample Paper with General Instruction for Class - 12Learning Three Sixty
Learning 360 brings “Physics sample paper” for CLASS – 12. This document also carries 31 questions with solution of each given question for better understanding of the students. Download for free now; http://www.learning360.net/study_hub/1090-2/
An Overview of Superconductivity with Special Attention on Thermodynamic Aspe...Thomas Templin
Superconductors are special types of conductors that exhibit a variety of physical phenomena such as zero resistivity, the absence of thermoelectric effects, ideal diamagnetism, the existence of a Meissner effect, and flux quantization. The observed phenomena mean that superconductivity is a well-defined thermodynamic equilibrium state/phase that does not depend on a sample’s history. Changes of phase are entirely reversible, and once a substance has come to equilibrium with its surroundings, there is no memory of its past history.
A variety of theoretical approaches have been developed to explain superconductivity. These include the two-fluid model of superconductivity, the Ginzburg-Landau theory, and the BCS model. These models are most suitable to explain the phenomena associated with type-I superconductors, i.e., the types of superconductors that only exist when the external magnetic field is below a relatively low threshold value of Bc as well as below a transition temperature Tc close to 0 K. In the 1980s a new type of superconductors was discovered, called type-II superconductors. Type-II materials are characterized by the coexistence of normally conducting and superconducting states as well as relatively high values of the critical field and transition temperature. Type-II superconductors have been used in a variety of technological applications, such as superconducting electromagnets, MRI, particle accelerators, levitating trains, and superconducting quantum-interference devices (SQUIDs).
The superconducting state has a lower free energy than the normal state. The exclusion of the magnetic field from a superconductor leads to an increase in the free energy. The Meissner effect thus implies the existence of a thermodynamical critical field for which these two effects balance out. Knowing only the experimental temperature dependence of the critical field, the Gibbs free energy, the entropy, and the specific heat that characterize the superconducting phase can be determined.
This document discusses band theory and semiconductor theory. It begins by introducing band theory, which models the allowed energy states in solids as continuous bands separated by forbidden gaps. Semiconductors are defined as having small band gaps (<1 eV), allowing thermal excitation of electrons across the gap. This explains their decreasing resistivity with increasing temperature. The Kronig-Penney model is presented to illustrate how periodic lattice potentials create energy bands and gaps. Semiconductors have filled valence bands separated from conduction bands by small gaps, whereas insulators have larger gaps preventing electrical conduction. Empirical models are discussed for describing the temperature dependence of resistivity in semiconductors.
This document summarizes research into using laser excitation of cesium ions to enhance the performance of thermionic energy converters (TECs). The researchers have developed a particle-in-cell model of a planar diode discharge to simulate TEC operation and are using it to model the effects of laser excitation on current-voltage characteristics. They have also designed a laboratory test cell to experimentally validate the effects of laser excitation on TEC performance. Initial results suggest laser excitation could substantially improve TEC current density and efficiency over conventional ignited or triode configurations.
This document summarizes research into using laser excitation to enhance the production of cesium ions in thermionic energy converters (TECs). The researchers have developed a particle-in-cell model of a planar diode discharge to simulate TEC performance with and without laser ionization. They have also designed a laboratory test cell to experimentally validate the effect of laser excitation on TEC current-voltage characteristics. Future work will include refining the models, procuring parts for the test cell, and conducting experimental studies to analyze how laser excitation can increase TEC efficiency and be used in energy systems to reduce carbon emissions.
This document summarizes research into using laser excitation to enhance the production of cesium ions in thermionic energy converters (TECs). The researchers have developed a particle-in-cell model of a planar diode discharge to simulate TEC performance with and without laser ionization. They have also designed a laboratory test cell to experimentally validate the effect of laser excitation on TEC current-voltage characteristics. Future work will include refining the models, procuring parts for the test cell, and conducting experimental studies to characterize optimized TEC performance with optical modulation. The goal is to increase TEC efficiency for applications in solar and combustion energy systems to reduce greenhouse gas emissions.
This document summarizes research into using laser excitation of cesium ions to enhance the performance of thermionic energy converters (TECs). The researchers have developed a particle-in-cell model of a planar diode discharge to simulate TEC operation and are using it to model the effects of laser excitation on current-voltage characteristics. They have also designed a laboratory test cell to experimentally validate the effects of laser excitation on TEC performance. Initial results suggest laser excitation could substantially improve TEC current density and efficiency over conventional ignited or triode configurations.
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2. QUESTION BANK: ENGINEERING PHYSICS, SUBJECT
CODE: BSPH1203
[For B.Tech, 1st
Semester CSE, 2nd
Semester ECE, EEE, EE of CENTURION UNIVERSITY
OF TECHNOLOGY AND MANAGEMENT]
Topic- Electron theory of solids, Hall Effect, semiconductor
and superconductor
Section – A (Short type question)
1. In two materials the energy gap between the conduction band and valence band is =1eV
and =5eV. Classify the materials electrically. (BPUT-2005)
2. What type of semiconducting material is produced when an alloy of aluminium and
germanium in the ratio 1:106
is prepared? (BPUT-2007)
3. Show graphically the variation of resistivity of a pure metal with temperature according to
classical free electron theory. (BPUT-2005)
4. Why does conductivity of metals decreases at higher temperature? (BPUT – 2005)
5. Write Wiedemenn-Frantz law.
6. Draw the band diagram of insulators and conductors. (BPUT-2006)
7. Give the band diagrams of insulators, conductors and semiconductors. (BPUT-2005,07)
8. Mention one similarity and one dissimilarity between energy level band diagram of silicon
and diamond(BPUT-2006)
9. Write down the expression for Lorentz number (BPUT – 2005)
10. Prove that the probability of occupancy of an energy level by the electrons below Fermi
level at 0o
C is 1.(BPUT-2005)
11. Show that all the energy levels of a material below the Fermi level at 0K are filled up by
electrons. (BPUT-2007)
12. What is Hall Effect? (BPUT – 2005)
13. Is Hall Effect affected by sign of the charge carrier? Justify your answer. (BPUT-2005)
14. What are superconductors? Give any two examples.
15. What type of magnetism is developed in a superconducting material below its critical
temperature? (BPUT-2005)
16. Indicate the type of superconductivity observed in Aluminum metal and Niobium-
Zirconium alloy.(BPUT-2004)
17. Show the variation of resistance verses the temperature of a superconductor and normal
conductor. (BPUT-2006)
18. What type of magnetism is developed in a superconductor when its temperature is lowered
below its critical temperature? (BPUT-2006)
3. 19. Plot the variation of critical magnetic field with temperature of a superconducting material.
(BPUT-2006)
20. What are Cooper pairs? (BPUT-2005)
21. What are high temp superconductors? Give two examples.
22. Define Meissner effect. (BPUT-2004)
23. Show that electric field inside a superconductor is zero. (BPUT-2005)
24. Write any two applications of superconductor. (BPUT-2005)
25. Write any two medical applications of superconductor. (BPUT-2005)
26. Show that electric field inside a super conductor is zero. (BPUT-2005)
27. Electrical conductivity of insulators is the range _____________.
10-10(Ω-mm)-1 (b) 10-10(Ω-cm)-1 (c) 10-10(Ω-m)-1 (d) 10-8(Ω-m)-1
28. Units for electric field strength
(a) A/cm2 (b) mho/meter (c) cm2/V.s (d) V/cm
29. Energy band gap size for semiconductors is in the range ________ eV.
(a)1-2 (b) 2-3 (c) 3-4 (d) > 4
30. Energy band gap size for insulators is in the range ________ eV.
(a)1-2 (b) 2-3 (c) 3-4 (d) > 4
31. Flow of electrons is affected by the following
(a) Thermal vibrations (b) Impurity atoms (c) Crystal defects (d) all
32. Not a super conductive metallic element
(a) Fe (b) Al (c) Ti (d) W
33. Fermi energy level for intrinsic semiconductors lies
(a) At middle of the band gap (b) Close to conduction band
(c) Close to valence band (d) None
34. Fermi energy level for p-type extrinsic semiconductors lies
(a) At middle of the band gap (b) Close to conduction band
(c) Close to valence band (d) None
35. Fermi energy level for n-type extrinsic semiconductors lies
(a) At middle of the band gap (b) Close to conduction band
(c) Close to valence band (d) None
36. Not an example for intrinsic semiconductor
(a) Si (b) Al (c) Ge (d) Sn
37. In intrinsic semiconductors, number of electrons __________ number of holes.
(a) Equal (b) Greater than (c) Less than (d) Can not define
38. In n-type semiconductors, number of holes __________ number of electrons.
(a) Equal (b) Greater than (c) Less than (d) Can not define
39. In p-type semiconductors, number of holes __________ number of electrons.
(a) Equal (b) Greater than (c) Less than (d) Twice
40. Mobility of holes is ___________ mobility of electrons in intrinsic semiconductors.
(a) Equal (b) Greater than (c) Less than (d) Can not define
41. Fermi level for extrinsic semiconductor depends on
(a) Donor element (b) Impurity concentration (c) Temperature (d) All
4. (ANSWRS FROM 27-41)
27. a
28. c
29. b
30. c
31. d
32. b
33. c
34. b
35. b
36. a
37. c
38. d
39. a
40. d
41. d
Section – B (Descriptive type questions)
42. Write the main postulates of classical free electron theory and derive the expression for
electrical conductivity of a material. Also write the advantages and draw backs of this
theory.
43. What are the postulates of Drude-Lorentz theory of metals? (BPUT-2006)
44. Discuss the advantages and disadvantages of classical free electron theory of metals.
(BPUT-2005)
45. Derive an expression for the electrical conductivity of a material in terms of relaxation
time. (BPUT-2006)
46. Differentiate between n- and p- type extrinsic semiconductors with suitable examples.
(BPUT-2004)
47. What is Hall effect? How you will determine the mobility of electrons in germanium
knowing only the resistivity and Hall coefficient of it? (BPUT-2005)
48. Explain the phenomenon of Hall Effect. Discuss the method of identifying an unknown
piece as n-type semi conductor.
49. Distinguish between soft superconductor and hard superconductor. (BPUT-2007)
50. Distinguish between Type-I and Type-II superconductors. (BPUT-2005)
Section – C (Problems)
51. The density and atomic weight of cu are 8900 kg m-3
and 63.5. The relaxation time of
electrons in Cu at 300K is 10-14
S. Calculate the electrical conductivity of copper.
52. A conduction wire has a resistivity of 1.54 x 10-8
ohm m at room temperature. The Fermi
energy for such a conductor is 5.5ev. there are 5.8 x 1028
m-3
conduction electron per m3
.
Calculate.
a. The relaxation time and the mobility of the electrons.
b. The av.Drift velocity of the electrons when the electric field applied to the conductor
is 1Vcm-1
.
c. The velocity of an electron with Fermi energy.
d. The mean free path of the electron.
53. Calculate the conductivity of Al at 250
C using the following data. Density of Al = 2.7g
cm-3
, at weight of Al =27 and relaxation time of electrons = 10-14
s.
54. Calculate the Fermi energy in Zinc at 0K. The density and atomic wt. of Zinc is 7.14g/cm3
and 65.38amu. (BPUT-2005)
55. The thermal and electrical conductivities of Cu at 200
C are 390w m-1
K-1
and 5.87 x
107
ohm -1
m-1
respectively. Calculate Lorentz no.
5. 56. Relaxation time of electrons in copper is 2.5x10-14
s. There are 8.4x1028
number of
conduction electrons per unit volume. Find the electrical conductivity of copper as per the
classical free electron theory of metals. (BPUT-2007)
57. The electron and hole mobility for silicon are 0.14 and 0.048 m2
/V-s respectively at room
temperature. If the hole concentration at this temperature is 1.33 x 1016
m-3
, calculate its
conductivity at room temperature. [Given |e| = 1.6 x 10-19
C]. (BPUT-2004)
58. Calculate the electrical conductivity of intrinsic silicon at 1500
C. Given ni = 4 x 1019
m-3
,
µe = 0.06 m2
/Vs and µh = 0.022m2
/Vs.
59. The following data are given for an intrinsic Ge at 300K. Calculate the conductivity of the
sample. (Given ni = 2.4 x 1019
m-3
, µ= 0.39m2
V-1
s-1
, µn = 0.19 m2
V-1
s-1
)
60. The concentration of free electrons in germanium crystal is 2x1019
electrons/m3
.and the
nobilities of electrons and holes respectively are 0.36m2
V-1
s-1
and 0.17 m2
V-1
s-1
. Calculate
the current produced in a germanium crystal having cross sectional are 2cm2
,
length0.2mm, under a potential difference of 2V. (BPUT-2007)
61. Calculate the electrical and thermal conductivities for a metal with relaxation time 10-14
at
300
K. Also calculate the Lorentz no. by the above result. (Density of electrons = 6 x 1028
m-3
).
62. The Fermi energy of silver at 0 K is 5.51eV. What is the average energy of free electrons
in silver at 0 K. (BPUT-2006)
63. In a material transition occurs between a metastable state and an energy level of 0.24 eV
and the wavelength of radiation emitted is 1100 nm. Calculate the energy of the metastable
state. (BPUT-2006)
64. Calculate the Fermi energy in Zinc at 0K. The density and atomic wt. of Zinc is 7.14g/cm3
and 65.38amu. (BPUT-2005)
65. Find the temperature at which there is 1% probability that an electronin a solid will have
an energy 0.5eV above the Fermi energy. (e=1.6x10-19
C and kB= 1.38x10-23
J/K) (BPUT-
2005)
66. Phosphrous is added to high purity silicon to give a concentration of 1023
m-3
of charge
carriers at room temperature. Calculate the conductivity at room temperature. What type of
semiconductor is this material? (BPUT-2005)
67. The Fermi energy in copper at 0K on the assumption that each coper atom contributes one
electron to the electron gas is 7.04eV.Calculate the Fermi energy and average energy of an
electron in metal at 300K. (BPUT-2005)
68. The concentration of free electrons in copper is 8.4x1028
m-3
. Calculate the hall coefficient.
(BPUT-2006)
69. The hall coefficient and conductivity of cu at 300K have been measured to be -0.55 x 10-10
m3
A-1
s-1
and 5.9 x 107
ohm -1
m-1
respectively. Calculate the drift mobility of electron in
copper.
70. An n-type semiconductor specimen has Hall coefficient RH = 3.66 x 10-11
m3
A-1
s-1
the
conductivity of the specimen is found to be 112 x 107
ohm -1
m-1
. Calculate the charge
carrier density ne and electron mobility at room temperature.
71. A current of 200A is established in a rectangular slab of copper of width 2cm and 1.0mm
thickness. A magnetic field of induction 1.5T is applied perpendicular to both current and
the plane of the slab. The concentration of free electrons in copper is 8.4x1028
m-3
.
Calculate the Hall voltage across the slab. (BPUT-2005, 07)
6. 72. The critical temperature for certain superconducting material with isotopic mass 202amu is
4.153K. Calculate its critical temperature when its isotopic mass becomes 200 amu.
(BPUT-2005)
73. The radius of an indium wire is 6mm. The critical temperature is 3.4K and the critical
magnetic field is 29.3x10-3
Tesla at 0K for indium.Calculate the critical current density in
the wire at 2K. (BPUT-2006)
74. It is found experimentally that superconducting critical temperature of indium is 3.4 K and
critical magnetic induction at 0K is 29.3x10-3
T. What will be the critical current density of
indium wire of radius 5mm at 4K? (BPUT-2005)
75. It is found experimentally that superconducting critical temperature of lead is 7.193 K and
critical magnetic induction at 0 K is 80.3 X 10-3
Tesla. What will be the critical current
density of lead wire of radius 5 mm at 4 K? (BPUT-2006)
76. In n-type semiconductor, the Fermi level lies 0.3 eV below the conduction band at 300 K.
If the temperature is increased to 330 K, calculate the new position of the Fermi level
assuming that concentration of carriers does not change with temperature. (BPUT-2006)
Topic- Optical properties of materials, Laser, Optical fibers
Section – A (Short type question)
77. What is the full form of LASER? State its different applications.(BPUT-2004)
78. What properties of LASER differentiate it from other light source?
79. Ruby LASER is an example of --------------
a. Two level, b. Three level, c) Four level, d) None
80. Among the following LASERS which emits the largest wave length radiation
a.) Ruby LASER, b) CO2 LASER c) Semiconductor LASER, d) He-Ne LASER.
81. LASER is produced due to Stimulated emission, b) Stimulated absorption, c) Spontaneous
emission, d) all the above.
82. In LASER production, population inversion takes place at (a) Ground state, b) Excited
state, c) Meta stable state , d) Stable state.
83. What is the necessary and sufficient condition for LASER production.
84. Define saturation intensity?
85. Write the use of two mirrors in LASER system.
86. Define temporal and spatial coherence.
87. What do you mean by optical properties of material? (BPUT-2005)
88. Distinguish between spontaneous emission, induced absorption and induced emission.
(BPUT-2005)
89. Explain how lasers are useful in computer system. (BPUT-2006)
90. How LASERs are in use to improve the living conditions in the world. (BPUT-2007)
91. How optical fibers are in use to improve the living conditions in the world?(BPUT-2004,
06, 07)
92. Give statement of the basic principle involved in the functioning of an optical fiber.
(BPUT-2005)
7. 93. Draw the cross sectional views of an optical fiber and show the different components of
the optical fiber in it. (BPUT-2006)
94. Distinguish between step index multimode fiber and graded index multimode fiber.
(BPUT-2006)
95. What will happen if the refractive index of the core is lesser than that of cladding? (BPUT-
2007)
Section – B (Descriptive type questions)
96. What are optical fibers? Discuss its principle of operation. (BPUT-2005)
97. What is acceptance angel in optical fiber? Derive an expression for the numerical
apperature of a step index optical fiber in terms of its refractive indices of core and
cladding. (BPUT-2006)
98. Write the principle of LASER production. (BPUT-2004)
99. Explain how a four level laser system works? (BPUT-2005)
100. What is LASER? Explain the principles of operation of He-Ne LASER. (BPUT-2005)
101. Explain with block diagram the FOCL. (BPUT-2006)
Section – C (Problems)
102. The refractive index of the material is 1.54 and the transmissivity of a dielectric material of 15 mm
thick to a normally incident light is 0.80. Calculate the thickness of the material that will have
transmissivity of 0.7. All the reflection losses are to be included. (BPUT-2006)
103. The dielectric constant of quartz is 1.55. Calculate the refractive index of the material.
(BPUT-2006)
VECTORE CALCULAUS
104. A scalar function is given by f(x, y, z) = 2xy2
+ xyz3
. Evaluate the gradient of the
function at the point (1, 1, 1).(Supp2006)(3marks)
105. Evaluate ∇ q, q = ax2
– 2by + c2
z2
where a, b and are c are constant at (1, -2, 3) (1st
sem 2009) (3)
106. What is physical significance of gradient of a scalar function?(1st
sem 2009) (2)
107. A single turn coil of radius 5cm is placed on a plane paper and magnetic flux, directed
perpendicularly out of the paper varies according to φ = 11t2
+ 7t + 15. What is the
magnitude and direction of induced emf in the coil at time t = 1.5s? (1st
sem
2007)(2marks)
108. Evaluate F
rr
⋅∇ where kxyzjyxixyF ˆˆˆ2 22
++=
r
and i, j, k are unit vectors along x, y& z
directions respectively. (2nd
Sem 2004)(2marks)
109. A vector field is given by jyixF ˆ5ˆ2 +=
r
Evaluate the divergence of the vector.
(Supp2004)(4marks)
8. 110. Evaluate the divergence of the vector field kxzjyixyF ˆ3ˆ2ˆ2 ++=
r
at (1, 1, 0).
(2nd
sem2005)(3marks)
111. Evaluate the divergence of kxzjyixyA ˆ2ˆˆ 2
++=
r
at the point (2, 1, 0) (1st
sem 2005)
112. Evaluate divergence of a position vector. (2nd
sem 2006)(2marks)
113. Define divergence of a vector function in terms of integrals. (2nd
sem 2006)
114. What is the physical significance of curl of a vector function? (2nd
sem 2006)(2marks)
115. Evaluate curl A. Where kxzjyzixyA ˆˆˆ ++=
r
(1st
sem 2003)(2marks)
116. Evaluate r
rr
×∇ where r is the position vector. (1st
sem 2005)(2marks)
117. What is the physical significance of line integral of a vector function? (2nd
sem
2007)(2marks)
118. Evaluate the surface integral for the vector function zyzyyxxzF ˆˆˆ4 2
+−=
r
over the
surface S. where S is the surface of the unit cube bounded by x=0, x=1, y=0, y=1, z=0,
z=1(2nd
sem 2006)(6marks)
119. State Gauss divergence theorem in vector calculus. (Supp2004) (1st
sem 2005)(2marks)
120. Using Gauss divergence theorem, prove that the volume of a sphere of radius r is 4/3
(πr3
) (1st
sem2004)(5marks)
121. State Stoke’s theorem in vector calculus. (Supp2006)
122. Write the second form of the Green’s theorem. (1st
sem2004)
123. Write Gauss law of electrostatics in a dielectric medium. Obtain its differential form.
(Supp2005)(4marks)
124. State Gauss law in electrostatics. Obtain its differential form in vacuum.
(Supp2006)(4marks)
125. Write the integral and differential form of Gauss’s law in electrostatics in vacuum
(2nd
sem 2004)(4marks)
126. Write down the Maxwell’s electromagnetic wave equations both in differential form. (2
mark,2nd
sem 2010).
127. Write the Maxwell electromagnetic equation in free space, which follow from Gauss
law in electrostatics. (Supp2005)
128. Find the electric field intensity at a distance ‘r’ from a point charge ‘q’ by applying
Gauss law in electromagnetism. (2nd
sem 2007)(2marks)
129. Starting from Faraday’s law of electromagnetic induction, establish the relation,
t
B
E
∂
∂
−=×∇
r
rr
(1st
sem2004)(2marks)
130. What is Faraday’s law of electromagnetic induction? Find out its differential form. (5
mark,2nd
sem 2010)
131. Write the Maxwell’s electromagnetic equation in differential form, which follows from
Faraday’s law of electromagnetic equation. (2nd
sem 2004) (Supp2004)
132. State Ampere’s circuital law and obtain it’s differential form. (2nd
sem2005)(4marks)
133. Write the integral form of the Ampere’s circuital law. (1st
sem 2003)
134. Distinguish between conduction current and displacement current. Give examples.
(2nd
sem 2004) (2nd
sem2005)(Supp2006) (2nd
sem 2007) (4marks) (2 mark,2nd
sem 2010)
135. Derive the relation between displacement current and the magnitude of electric
displacement. (2nd
sem 2006)(2marks)
9. 136. Each plate of a parallel plat capacitor has area 15 cm2
and is being charged. The time
rate of variation of electric field between the two plates of the capacitor is 12.6 x 109
V/ms. Calculate the displacement current flowing between the plates of the capacitor.
(1st
sem 2007)(2marks)
137. What is the S.I unit of electric displacement vector. (2nd
sem 2007)
138. The electric field between two parallel metal plates of area 1 cm2
changes at the rate of
1.2X108
volt/m.sec. Calculate the displacement current. (Supp2005)(3marks)
139. One of the Maxwell’s e-m equations involves the curl of the electric field. Write the
equation & mention the law of electromagnetism which is represented by the
equation.(1st
sem 2005)
140. Write Maxwell’s electromagnetic equations in differential form in a medium in
presence of charge and currents. Identify and state the law of electromagnetism with
which these equations are associated. (1st
sem 2009) (3)
141. Write the Maxwell’s electromagnetic equation in differential form in a medium, in the
presence of charges and currents. Identify and state the laws of electromagnetism with
which these equations are related. (1st
sem 2003)(8marks)
ELECTROMAGNETIC WAVES
142. Write all four Maxwell’s equation in electromagnetic (1st
sem 2007)(2marks)
143. Write the Maxwell’s electromagnetic equation, which follows from the non-existence of
isolated magnetic pole. (2nd
sem2005) (Supp2006) (2nd
sem 2006)(2marks)
144. Write Maxwell’s electromagnetic equations in free space, in presence of charges and
currents. Name each symbol used in the equation. (Supp2004)(6marks)
145. Write Maxwell’s e-m equations in vacuum in the absence of any charge or current.
(Supp2006)(6marks)
146. State the Maxwell’s equation in electromagnetism connecting magnetic field vector and
electric displacement vector. (2nd
sem 2006)(2marks)
147. Starting from Maxwell’s electromagnetic equations in free space, in absence of charge
and currents, obtain the wave equation for electric field. (2nd
sem 2004)(Supp2004)
(4marks)
148. Starting from Maxwell’s electromagnetic equations in vacuum, obtain the wave
equations for the four fields vectors E, D, B and H. (1st
sem 2007)(4marks)
149. Derive electromagnetic wave equation in terms of electric vector when the wave is
passing through vacuum. (1st
sem 2009) (3)
150. Obtain electromagnetic wave equation from Maxwell’s equation in a charge free and
current free region. (1st
sem2004)(6marks)
151. Derive the e-m wave equation in terms of electric vector when the wave is passing
through vacuum. (2nd
sem 2006)(5marks)
152. Derive equation for an electromagnetic wave travelling in a charge free conducting
medium in terms of electric field vector. (4 mark,2nd
sem 2010)
153. Starting from Maxwell’s e-m equation, obtain the wave equation for E in an ionized
medium. Identify the dissipative terms in the equation.
(1st
sem 2005) (Supp2005)(5marks)
154. Write the wave equation for the electric field E in an ionized medium. (2nd
sem 2004)
10. 155. Starting from Maxwell’s electromagnetic equations in free space, obtain the wave
equations in terms of scalar and vector potentials. Mention the Gauge conditions used.
(1st
sem 2003)(6marks)
156. Write the electromagnetic wave equation in free space, in terms of scalar and vector
potential. (1st
sem 2003) (Supp2004) (Supp2005)(2nd
sem2005) (2nd
sem 2006)(3marks)
157. Prove the transverse nature of electromagnetic wave mathematically. (1st
sem 2009) (4)
158. Electromagnetic waves are transverse waves; that means electric vector, magnetic
vector and propagation vector are perpendicular to each other. Prove this
mathematically. (2nd
sem 2007)(3+3marks)
159. Imagine an 3elctromagnetic wave propagating vacuum with electric field Ex =
102
sinπ(3x106
z – 9x1014
t) V/m, Ey =0, Ez = 0. Determine the speed, frequency,
wavelength, initial phase and the corresponding magnetic field.
(1st
sem 2007)(4+2marks)
160. Define Poynting vector. Mention its dimension and SI unit. (Supp2004)(3marks)
161. Give the non-mathematical statement of Poynting theorem. (2nd
sem 2006)
162. Starting from Maxwell’s electromagnetic equation in free space, obtain Poynting
theorem. (2nd
sem2005)(7marks)
163. Show that average value of Poynting vector for a plane e-m wave is 2
2
1
HX
ε
µ
.
(2nd
sem 2006)(6marks)
164. Define pointing vector. Mention its dimension.(1st
sem 2009)(2 marks)
165. State and explain Poynting theorem. (1st
sem 2005) (2nd
sem 2004)(4marks)
166. A plane e-m wave propagates horizontally from east to west. If the magnetic field
associated with the wave, at a point in its path, is towards north, what is the direction of
associated electric field at that point? (Supp2006)
167. A plane electromagnetic wave travels vertically upward. If the magnetic field of the
electro magnetic wave is eastward, what is the direction of the associated electric field?
(2nd
sem2005)
168. A plane e-m wave propagates along vertical downward direction. At a given instant, the
direction of E at a point is towards east. What is the direction of B? (1st
sem
2005)(2marks)
169. Explain why e-m wave having frequency less than the plasma frequency cannot
propagate in the corresponding ionized medium. (2nd
sem 2007)(2marks)
170. Define plasma frequency and cut off frequency of an ionized medium. There are
approximately 1011
number of electrons per unit volume in ionosphere. Calculate the
plasma frequency and cut off frequency for the medium. Also calculate the speed of
electromagnetic wave in the same medium having frequency 250 MHz.
(1st
sem 2007)(3+1+1marks)
171. Mention the boundary conditions satisfied by electric field and electric displacement at
the boundary of two media. (Supp2004)(2marks)
172. Mention the boundary conditions satisfied by the vectors E, D, B &H at the interface
between the two non-conducting media. (1st
sem 2003) (1st
sem2004)(4marks)
PROBLEMS
11. 173. In free space electric field intensity is given as E= ŷ 20 cos (ωt-50x) volt/m. Calculate
displacement current density. (2nd
sem 2006)(2marks)
174. Calculate the speed of e-m wave in vacuum. Data given are ε0 = 8.8547x10-12
coulomb2
/
Newton.meter2
and µ0 = 4π x 10-7
Weber/ampere meter (2nd
sem 2006)(2marks)
175. A medium is characterised by relative permittivity εr=45 and relative permeability µr=5.
Calculate the speed of e-m wave in the medium and refractive index of the medium.
(2nd
sem 2006)(2marks)
176. The magnetic vector potential in a given region is a constant vector having magnitude
4πX105
units and points along the positive x-axis. What is the magnitude of the
magnetic induction in the region? (1st
sem 2005)
177. The maximum value of electric field in an electromagnetic wave is 800V/m. Find the
maximum value of magnetic intensity and the average value of pointing vector. (3 mark,2nd
sem 2010)
178. The electromagnetic wave is propagating in free space with electric vector E(z, t)=150
cos(ωt-kz)x. How much average energy is passing through a rectangular hole of length
3 cm and width 1.5 cm or yz or xz plane in one minute time?(2nd
sem 2006)
179. A laser beam from 100watt source is focused on an area of 10-8
m2
. Evaluate the
magnitude of the Poynting vector on the area.(2nd
sem 2004)(2marks)
180. A plane e-m wave propagates in vacuum. The maximum value of electric field is 500
volt/m. Find the average value of Poynting vector for the wave. (Supp2005)(5marks)
181. The amount of electromagnetic energy received by earth in the form of light from sun is
1300 Watt/m2
. Calculate the root mean square value of the electric vector and magnetic
vector of the light wave on the earth surface. (2nd
sem 2007)(4marks)