1.Silicon Manufacturing
a) Czochralski method.
b) Wafer Manufacturing
c) Crystal structure
2.Photolithography
a) Photoresists
b) Photomask and Reticles
c) Patterning
Semiconductor device fabrication is the process used to create the integrated circuits that are present in everyday electrical and electronic devices. It is a multiple-step sequence of photo lithographic and chemical processing steps during which electronic circuits are gradually created on a wafer made of pure semiconducting material. Silicon is almost always used, but various compound semiconductors are used for specialized applications.
1.Silicon Manufacturing
a) Czochralski method.
b) Wafer Manufacturing
c) Crystal structure
2.Photolithography
a) Photoresists
b) Photomask and Reticles
c) Patterning
Semiconductor device fabrication is the process used to create the integrated circuits that are present in everyday electrical and electronic devices. It is a multiple-step sequence of photo lithographic and chemical processing steps during which electronic circuits are gradually created on a wafer made of pure semiconducting material. Silicon is almost always used, but various compound semiconductors are used for specialized applications.
Ion implantation is used in semiconductor device fabrication and in metal finishing, as well as in material science research.
it is a low temperature process that includes the acceleration of ions of a particular element towards a target, altering the chemical and physical properties of the target.
The CMOS fabrication process in VLSI.
CMOS (complementary metal-oxide-semiconductor) is the term usually used to describe the small amount of memory on a computer motherboard that stores the BIOS settings.
Ion implantation is used in semiconductor device fabrication and in metal finishing, as well as in material science research.
it is a low temperature process that includes the acceleration of ions of a particular element towards a target, altering the chemical and physical properties of the target.
The CMOS fabrication process in VLSI.
CMOS (complementary metal-oxide-semiconductor) is the term usually used to describe the small amount of memory on a computer motherboard that stores the BIOS settings.
Behavior of carbon steel in simulated concrete pore solutions of air-entraine...Adriana de Araujo
In Brazil, the air-entrained concrete has been extensively used as structural walls of housing units. Some of these units built recently in urban areas were inspected. Upon inspection, a significant variation of the potential corrosion measurement was obtained and reddish stains on the surface of the reinforcement were also observed, indicating active state of corrosion. Not always the concrete was fully carbonated and a chloride contamination was not detected. The occurrence of crevice corrosion was pointed as a possible cause of the premature corrosion as a non-uniform contact of the concrete with the reinforcement surface was detected.
In order to better understand the occurrence of premature corrosion of the inspected reinforcement, a complementary study was conducted at the laboratory to characterize air-entrained concretes and evaluate the behavior of steel bars immersed in solutions that simulate the water in the pores of these concrete and compare them to the pore solution of an ordinary Portland concrete.
The steel bars were evaluated under three conditions: blasted, corroded and galvanized. An intentional crevice was introduced on one of the bars. The behavior of the bars was monitored by visual examination and by electrochemical measurements. Finally, the corrosion rate was calculated. Tests on concrete specimens were also conducted to validate the results.
The characterization tests showed an inferior quality of the air-entrained concretes, having both high concentrations of pores, many of them fully interconnected. This justified the high deep carbonation observed in a short period of time and a variable electrical resistivity detected in the field.
The pore-solution immersion tests showed the higher corrosion susceptibility of metallic reinforcement in air-entrained concretes especially at the crevice areas. In the studied air-entrained concretes, the corrosion occurred preferentially under the sealant applied on the bar extremities. In one of them, corrosion was also observed on the free surface of the blasted bars. The corrosion was also observed in the air-entrained concrete specimens, confirming the tests solution results.
Discusses about Microsystems Technologies such as thin filling processing,additive processes,subtractive processes,sacrificial processes,electrodeposition,electroforming etc
CFD Simulation of By-pass Flow in a HRSG module by R&R Consult.pptxR&R Consult
CFD analysis is incredibly effective at solving mysteries and improving the performance of complex systems!
Here's a great example: At a large natural gas-fired power plant, where they use waste heat to generate steam and energy, they were puzzled that their boiler wasn't producing as much steam as expected.
R&R and Tetra Engineering Group Inc. were asked to solve the issue with reduced steam production.
An inspection had shown that a significant amount of hot flue gas was bypassing the boiler tubes, where the heat was supposed to be transferred.
R&R Consult conducted a CFD analysis, which revealed that 6.3% of the flue gas was bypassing the boiler tubes without transferring heat. The analysis also showed that the flue gas was instead being directed along the sides of the boiler and between the modules that were supposed to capture the heat. This was the cause of the reduced performance.
Based on our results, Tetra Engineering installed covering plates to reduce the bypass flow. This improved the boiler's performance and increased electricity production.
It is always satisfying when we can help solve complex challenges like this. Do your systems also need a check-up or optimization? Give us a call!
Work done in cooperation with James Malloy and David Moelling from Tetra Engineering.
More examples of our work https://www.r-r-consult.dk/en/cases-en/
Hierarchical Digital Twin of a Naval Power SystemKerry Sado
A hierarchical digital twin of a Naval DC power system has been developed and experimentally verified. Similar to other state-of-the-art digital twins, this technology creates a digital replica of the physical system executed in real-time or faster, which can modify hardware controls. However, its advantage stems from distributing computational efforts by utilizing a hierarchical structure composed of lower-level digital twin blocks and a higher-level system digital twin. Each digital twin block is associated with a physical subsystem of the hardware and communicates with a singular system digital twin, which creates a system-level response. By extracting information from each level of the hierarchy, power system controls of the hardware were reconfigured autonomously. This hierarchical digital twin development offers several advantages over other digital twins, particularly in the field of naval power systems. The hierarchical structure allows for greater computational efficiency and scalability while the ability to autonomously reconfigure hardware controls offers increased flexibility and responsiveness. The hierarchical decomposition and models utilized were well aligned with the physical twin, as indicated by the maximum deviations between the developed digital twin hierarchy and the hardware.
Saudi Arabia stands as a titan in the global energy landscape, renowned for its abundant oil and gas resources. It's the largest exporter of petroleum and holds some of the world's most significant reserves. Let's delve into the top 10 oil and gas projects shaping Saudi Arabia's energy future in 2024.
Industrial Training at Shahjalal Fertilizer Company Limited (SFCL)MdTanvirMahtab2
This presentation is about the working procedure of Shahjalal Fertilizer Company Limited (SFCL). A Govt. owned Company of Bangladesh Chemical Industries Corporation under Ministry of Industries.
Final project report on grocery store management system..pdfKamal Acharya
In today’s fast-changing business environment, it’s extremely important to be able to respond to client needs in the most effective and timely manner. If your customers wish to see your business online and have instant access to your products or services.
Online Grocery Store is an e-commerce website, which retails various grocery products. This project allows viewing various products available enables registered users to purchase desired products instantly using Paytm, UPI payment processor (Instant Pay) and also can place order by using Cash on Delivery (Pay Later) option. This project provides an easy access to Administrators and Managers to view orders placed using Pay Later and Instant Pay options.
In order to develop an e-commerce website, a number of Technologies must be studied and understood. These include multi-tiered architecture, server and client-side scripting techniques, implementation technologies, programming language (such as PHP, HTML, CSS, JavaScript) and MySQL relational databases. This is a project with the objective to develop a basic website where a consumer is provided with a shopping cart website and also to know about the technologies used to develop such a website.
This document will discuss each of the underlying technologies to create and implement an e- commerce website.
Sachpazis:Terzaghi Bearing Capacity Estimation in simple terms with Calculati...Dr.Costas Sachpazis
Terzaghi's soil bearing capacity theory, developed by Karl Terzaghi, is a fundamental principle in geotechnical engineering used to determine the bearing capacity of shallow foundations. This theory provides a method to calculate the ultimate bearing capacity of soil, which is the maximum load per unit area that the soil can support without undergoing shear failure. The Calculation HTML Code included.
Overview of the fundamental roles in Hydropower generation and the components involved in wider Electrical Engineering.
This paper presents the design and construction of hydroelectric dams from the hydrologist’s survey of the valley before construction, all aspects and involved disciplines, fluid dynamics, structural engineering, generation and mains frequency regulation to the very transmission of power through the network in the United Kingdom.
Author: Robbie Edward Sayers
Collaborators and co editors: Charlie Sims and Connor Healey.
(C) 2024 Robbie E. Sayers
4. Basic Concepts
10 nm
0.1 µm
1 µm
1 nm
Masking Oxides
Gate Oxides
Tunneling Oxides
Field Oxides
Pad Oxides
Chemical Oxides from Cleaning
Native Oxides
Thermally Grown Oxides
Oxide
Thickness
Deposited Oxides
Backend Insulators
Between Metal Layers
Masking Oxides
5. Basic Concepts
• SiO2 and the Si/SiO2 interface are the principal reasons
for silicon’s dominance in the IC industry.
SiO2 Properties
• Easily selectively etched using lithography.
• Masks most common impurities (B, P, As, Sb).
• Excellent insulator ( ).
• High breakdown field ( )
• Excellent junction passivation.
• Stable bulk electrical properties.
• Stable and reproducible interface with Si.
• No other known semiconductor/insulator combination
has properties that approach the Si/SiO2 interface.
ρ>1016
Ωcm, Eg >9 eV
107
Vcm-1
8. Basic Concepts
• Oxidation involves a volume expansion (≈ 2.2X).
• Oxide layers grown on silicon has compressive stress.
1
1
1.3
1
1
1
1.2
1
1
1
1.3
1.3
Si substrate Si substrate
(a) Actual Silicon
(b) Converted Silicon into Silicon Dioxide
(c) Readjustment of Silicon Dioxide to Original Geometry
(a) (b) (C)
9. Basic Concepts
SiO2
Deposited Polysilicon
Si Substrate
Original Si SurfaceVolume
Expansion
Location of Si3N4 Mask
• Oxidation Involves volume expansion ( 2.2X)
• Especially in 2D &3D structures,stress effects play a dominant role
SEM Cross Sectional View of LOCOS
12. Basic Concepts
• Oxidation systems are conceptually very simple.
• In practice today, vertical furnaces, RTO systems and fast ramp
furnaces all find use.
Quartz
Tube
Wafers
Quartz Carrier
Resistance Heating
H2O2
13. Oxide
C
I
CG
CO
CS
CI
xO
Gas
0.01 - 1 µm 500 µm
Silicon
F1
F2 F3
SiO2 Growth Kinetics
Deal -Grove Model
Where, (CG - CS) is oxidant concentration difference between main gas flow
and oxide surface.
CO and CI are the oxidant concentration at just inside the oxide
surface and SiO2/Si interface respectively.
14. F1 =hG CG −CS( ) (3)
Deal Grove Model
The flux representing the transport of oxidant in the gas phase to the oxide
surface,
Where, hG is mass transfer coefficient
Oxidant conc. just inside oxide surface CO is given as by Henry’s Law
CO = HPS
Where, PS is the partial pressure of species at the solid surface but not known
experimental parameter so,
The oxidant concentration in the oxide, C* is given as
C* = HPG
Where, PG is the bulk gas pressure
(4)
(5)
15. Deal Grove Model
From the ideal gas law,
CG = PG / kT and CS = PS / kT
By substituting equations 4, 5 and 6 in equation 3, we get
F1 = h (C* - CO)
Where, h = hG / HkT
(6)
(7)
The flux representing the diffusion of oxidant through the oxide to the SiO2/Si
interface is given by Fick’s law,
F2 =D
∂N
∂x
=D
CO −CI
xO
(8)
Where, D is the oxidant diffusivity in the oxide
The flux representing the reaction at SiO2/Si interface is given as
F3 =kSCI (9)
Where, kS is the interface reaction rate constant
16. • Under steady state conditions, F1 = F2 = F3 so combining
eqs.( 7-9)
CI =
C*
1 +
kS
h
+
kSxO
D
≅
C*
1 +
kSxO
D
(10)
CO =
C*
1 +
kSxO
D
1 +
kS
h
+
kSxO
D
≅C*
(11)
• Note that the simplifications are made by considering h very
large as compared to kS which is a very good approximation.
Deal Grove Model
17. • Combining (9) and (10), we have the growth rate,
dx
dt
=
F
N1
=
kSC*
N1 1 +
kS
h
+
kSxO
D
(12)
• Integrating this equation, results in the linear parabolic model.
xO
2
−xi
2
B
+
xO −xi
B/ A
=t (13)
where (parabolic rate constant)B =
2DC*
N1
B
A
=
C*
N1
1
kS
+
1
h
≅
C*
kS
N1
(linear rate constant)and
(14)
(15)
Deal Grove Model
Where, N1 is the number of oxidant molecules incorporated per unit volume
of oxide grown.
18. τ=
xi
2
+Axi
B
τ+=+ t
AB
x
B
x OO
/
2
It is sometimes convenient to rewrite the linear
parabolic law as follows:
Where,
Two Limiting Forms
Xo= B/A (t+ г) or x2
0=B( t+ г )
19. • (13) can also be written with oxide thickness as a function of
time.
xO =
A
2
1+
t +τ
A2
/ 4B
−1
where τ =
xi
2
+Axi
B
(16)
(17)
• The rate constants B and B/A have physical meaning (oxidant
diffusion and interface reaction rate respectively).
These can be described by Arrhenius expressions as
B =C1 exp −E1 /kT( )
B
A
=C2 exp −E2 /kT( )
(18)
(19)
Deal Grove Model
21. Ambient B B/A
Dry O2 C1 = 7.72 x 102
µ2
hr-1
E1 = 1.23 eV
C2 = 6.23 x 106
µ hr-1
E2 = 2.0 eV
Wet O2 C1 = 2.14 x 102
µ2
hr-1
E1 = 0.71 eV
C2 = 8.95 x 107
µ hr-1
E2 = 2.05 eV
H2O C1 = 3.86 x 102
µ2
hr-1
E1 = 0.78 eV
C2 = 1.63 x 108
µ hr-1
E2 = 2.05 eV
• Numbers are for (111) silicon, for (100) divide C2 by 1.68.
Deal Grove Model
Activation Energy
• Diffusivity of oxygen in fused silica: 1.17ev
• Diffusivity of water in fused silica:0.80ev
22. 0.0001
0.001
0.01
0.1
1
10
100
0.65 0.7 0.75 0.8 0.85 0.9 0.95 1
Bµm2
hr
-
1
B/Aµmhr
-
1
1000/T(Kelvin)
800900100011001200
T(ÞC)
B/AH2O
B/ADryO2
BDryO2
BH2O
• Plots of B, B/A using the values in the Table.
Deal Grove Model
Parabolic rate
constant
B =
2DC*
N1
B/A =C*Ks/N1
Linear Rate
constant
23. Deal Grove Model
Calculated oxidation rates
Dry O2 Wet O2
0
0.5
1
1.5
2
0 1 2 3 4 5 6 7 8 9 10
Time - hours
1100 o
C
700 o
C
1000 o
C
900o
C
800 o
C
OxideThicknessµm)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0 2 4 6 8 10
Time - hours
1200 o
C
1100 o
C
1000 o
C
900 o
C
800 o
C
OxideThickness(µm)
Typical values of oxidant C*= 5x1016
cm-3
Dry O2
Solubility
24. Thin Oxide Growth Kinetics
• A major problem with the Deal Grove model was
recognized when it was first proposed - it does not
correctly model thin O2 growth kinetics.
• Experimentally O2 oxides grow much faster for ≈ 20 nm
than Deal Grove predicts.
• MANY models have been suggested in the literature.
25. 1. Reisman et. al. Model
xO =a t +ti( )
b
or xO =a t +
xi
a
1
b
b
• Power law “fits the data” for all oxide thicknesses.
• a and b are constants & experimentally extracted
parameters and ti time corresponding to growth of any
existing oxide thickness (xi)
• Physically - interface reaction controlled, volume
expansion and viscous flow of SiO2 control growth.
26. 2. Han and Helms Model
dxO
dt
=
B1
2xO +A1
+
B2
2xO +A2
• Two terms representing parallel reaction - “fits the data”
for all oxide thicknesses. (O2&O or oxygen vacancies)
• Three parameters ( A1 values is 0).
• Second process may be out-diffusion of OV and reaction
at the gas/SiO2 interface.
27. 3. Massoud et. al. Model
dxO
dt
=
B
2xO +A
+Cexp −
xO
L
• Second term added to Deal Grove model - higher dx/dt
during initial growth.
• L ≈ 7 nm, second term disappears for thicker oxides.
• Easy to implement along with the DG model; therefore,
used in process simulators.
28. • Data agrees with the Reisman, Han and Massoud
models. (800˚C dry O2 model comparison below.)
Thin Oxide Growth Kinetics
OxideThickness(µm)
30. Orientation Dependence
• In most oxidation conditions (Dry , Wet)
(111) > (100)
• Difference in the surface density of silicon atoms on the various crystal faces.
• Density of Si - Si bonds
• For very thin oxides grown at very low pressures in dry O2 ( Rapid Oxidation Phase)
• High pressures at low temperatures in wet oxidation (150 Atm) (High Stress)
(110) >(111) > (100)
100111
68.1
=
A
B
A
B
32. High Pressure Oxidation
The DG model predicts that the oxide growth rate should be
directly proportional to oxidant pressure. Valid for wet oxidation
33. Dopant Segregation
• m= concentration of dopant in
Si/concentration in oxide.
• m<1, oxide accepts dopant. m>1,
oxide rejects dopants
• Boron depletes and phosphorus
accumulates at the oxide/Si
interface
• Segregation is much worse when
oxidation takes place at lower
temperatures
Slow & fast diffusors
38. 2D Effects in Thermal Oxidation
• Variety of shaped
structures including cylinder.
•The oxide is thinner on both
concave and convex corners
than in flat regions
39. 39
.
0 1 2 3 4 5 6 7 8
1/r µm-1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
NormalizedOxideThickness
Convex Radii
Concave Radii
1200 ÞC
1100 ÞC
1000 ÞC
900 ÞC
800 ÞC
1100 ÞC
1000 ÞC
900 ÞC
1 µm 0.2 µm 0.125 µm
• Several physical mechanisms seem to be
important:
• Crystal orientation
• 2D oxidant diffusion
• Stress due to volume expansion
• Oxide Viscosity
• To model the stress effects, Kao et. al.
suggested modifying the Deal Grove
parameters.
kS (stress) =kS exp −
σnVR
kT
exp −
σtVT
kT
D(stress) =Dexp −
P( )VD( )
kT
C*
(stress) =C*
exp −
P( )VS( )
kT
(20)
(22)
(21)
where and are the normal and
tangential stresses at the interface.
VR, VT and VS are reaction volumes and
are fitting parameters.
(Kao et.al)
σn σ t