The document discusses integrated circuit fabrication processes. It introduces basic steps like oxidation, diffusion, ion implantation, deposition, etching, and epitaxy. Photolithography is used to apply these steps selectively through masking. The fabrication process involves growing thin oxides, doping silicon through diffusion or implantation, depositing materials, and selectively removing layers with etching. Top-down and bottom-up are two approaches, with top-down using masking and etching and bottom-up growing structures from seed crystals or polymers.
Semiconductors are materials that have electrical conductivity between conductors such as most metals and nonconductors or insulators like ceramics. How much electricity a semiconductor can conduct depends on the material and its mixture content.
Semiconductors can be insulators at low temperatures and conductors at high temperatures. As they are used in the fabrication of electronic devices, semiconductors play an important role in our lives.
Semiconductor device fabrication is the process used to create the integrated circuits that are present in everyday electrical and electronic devices. It is a multiple-step sequence of photo lithographic and chemical processing steps during which electronic circuits are gradually created on a wafer made of pure semiconducting material. Silicon is almost always used, but various compound semiconductors are used for specialized applications.
1.Silicon Manufacturing
a) Czochralski method.
b) Wafer Manufacturing
c) Crystal structure
2.Photolithography
a) Photoresists
b) Photomask and Reticles
c) Patterning
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Semiconductors are materials that have electrical conductivity between conductors such as most metals and nonconductors or insulators like ceramics. How much electricity a semiconductor can conduct depends on the material and its mixture content.
Semiconductors can be insulators at low temperatures and conductors at high temperatures. As they are used in the fabrication of electronic devices, semiconductors play an important role in our lives.
Semiconductor device fabrication is the process used to create the integrated circuits that are present in everyday electrical and electronic devices. It is a multiple-step sequence of photo lithographic and chemical processing steps during which electronic circuits are gradually created on a wafer made of pure semiconducting material. Silicon is almost always used, but various compound semiconductors are used for specialized applications.
1.Silicon Manufacturing
a) Czochralski method.
b) Wafer Manufacturing
c) Crystal structure
2.Photolithography
a) Photoresists
b) Photomask and Reticles
c) Patterning
Are you looking to buy Si Wafer? We are a leading supplier of Silicon wafers across six continents in over 45 countries. Call (561) 842-4441 or Shop at our website.
Beyond all of the hype and tumult, market drivers and technological developments are converging to ensure a bright future for Si photonics.
THOUGH THE SI PHOTONICS MARKET HAS JUST KICKED OFF, VOLUME PRODUCTION IS ALREADY CLOSE
Big data is getting bigger by the second, and transporting it with existing technologies will push the limits of power consumption, density and weight. Yole Développement analysts are convinced that photons will replace electrons, and that Si photonics will be the mid-term platform to assist this transition.
Si photonics offers the advantages of silicon technology: low cost, higher integration, more embedded functionalities and higher interconnect density. It also provides two other key advantages:
1. Low power consumption: particularly when compared to copper-based solutions, which are expensive and require high electrical consumption.
2. Reliability: especially important for data centers, where a typical rack server’s lifespan is two years before replacement.
Back in 2006, VOA were the market’s first Si photonics products. Today, there are still a few Si photonics products on the market (i.e. VOA, AOC and transceivers from Luxtera, Kotura/Mellanox and Cisco/Lightwire) but big companies (i.e. Intel, HP and IBM) are close to realizing silicon photonics products. Yole Développement also sees big OEMs such as Facebook, Google and Amazon developing their own optical data center technology in partnership with chip firms (such as Facebook with Intel).
In this report Yole Développement shows that, in the short-term, silicon photonics will be the platform solution for future high-power, high-bandwidth data centers. Silicon photonics chips will be deployed in high-speed signal transmission systems, which greatly exceed copper cabling’s capabilities, i.e. for data centers and high-performance computing (HPC). As silicon photonics evolves and chips become more sophisticated, we expect the technology to be used more often in processing tasks such as interconnecting multiple cores within processor chips to boost access to shared cache and busses.
Analysts also analyzed silicon photonics’ chances of being used for telecom, consumer, medical and biosensors applications, compared with competing technologies.
More information on that report at http://www.i-micronews.com/reports/Silicon-Photonics-2014-report/1/445/
MONOLITHIC IC PROCESSES A monolithic integrated circuit (IC) is a set of circuitry on a single semiconductor plate or chip rather than built of separate elements as a discrete circuit is.
Beyond all of the hype and tumult, market drivers and technological developments are converging to ensure a bright future for Si photonics.
THOUGH THE SI PHOTONICS MARKET HAS JUST KICKED OFF, VOLUME PRODUCTION IS ALREADY CLOSE
Big data is getting bigger by the second, and transporting it with existing technologies will push the limits of power consumption, density and weight. Yole Développement analysts are convinced that photons will replace electrons, and that Si photonics will be the mid-term platform to assist this transition.
Si photonics offers the advantages of silicon technology: low cost, higher integration, more embedded functionalities and higher interconnect density. It also provides two other key advantages:
1. Low power consumption: particularly when compared to copper-based solutions, which are expensive and require high electrical consumption.
2. Reliability: especially important for data centers, where a typical rack server’s lifespan is two years before replacement.
Back in 2006, VOA were the market’s first Si photonics products. Today, there are still a few Si photonics products on the market (i.e. VOA, AOC and transceivers from Luxtera, Kotura/Mellanox and Cisco/Lightwire) but big companies (i.e. Intel, HP and IBM) are close to realizing silicon photonics products. Yole Développement also sees big OEMs such as Facebook, Google and Amazon developing their own optical data center technology in partnership with chip firms (such as Facebook with Intel).
In this report Yole Développement shows that, in the short-term, silicon photonics will be the platform solution for future high-power, high-bandwidth data centers. Silicon photonics chips will be deployed in high-speed signal transmission systems, which greatly exceed copper cabling’s capabilities, i.e. for data centers and high-performance computing (HPC). As silicon photonics evolves and chips become more sophisticated, we expect the technology to be used more often in processing tasks such as interconnecting multiple cores within processor chips to boost access to shared cache and busses.
Analysts also analyzed silicon photonics’ chances of being used for telecom, consumer, medical and biosensors applications, compared with competing technologies.
More information on that report at http://www.i-micronews.com/reports/Silicon-Photonics-2014-report/1/445/
MONOLITHIC IC PROCESSES A monolithic integrated circuit (IC) is a set of circuitry on a single semiconductor plate or chip rather than built of separate elements as a discrete circuit is.
Courier management system project report.pdfKamal Acharya
It is now-a-days very important for the people to send or receive articles like imported furniture, electronic items, gifts, business goods and the like. People depend vastly on different transport systems which mostly use the manual way of receiving and delivering the articles. There is no way to track the articles till they are received and there is no way to let the customer know what happened in transit, once he booked some articles. In such a situation, we need a system which completely computerizes the cargo activities including time to time tracking of the articles sent. This need is fulfilled by Courier Management System software which is online software for the cargo management people that enables them to receive the goods from a source and send them to a required destination and track their status from time to time.
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Our project explains about the student management. This project mainly explains the various actions related to student details. This project shows some ease in adding, editing and deleting the student details. It also provides a less time consuming process for viewing, adding, editing and deleting the marks of the students.
About
Indigenized remote control interface card suitable for MAFI system CCR equipment. Compatible for IDM8000 CCR. Backplane mounted serial and TCP/Ethernet communication module for CCR remote access. IDM 8000 CCR remote control on serial and TCP protocol.
• Remote control: Parallel or serial interface.
• Compatible with MAFI CCR system.
• Compatible with IDM8000 CCR.
• Compatible with Backplane mount serial communication.
• Compatible with commercial and Defence aviation CCR system.
• Remote control system for accessing CCR and allied system over serial or TCP.
• Indigenized local Support/presence in India.
• Easy in configuration using DIP switches.
Technical Specifications
Indigenized remote control interface card suitable for MAFI system CCR equipment. Compatible for IDM8000 CCR. Backplane mounted serial and TCP/Ethernet communication module for CCR remote access. IDM 8000 CCR remote control on serial and TCP protocol.
Key Features
Indigenized remote control interface card suitable for MAFI system CCR equipment. Compatible for IDM8000 CCR. Backplane mounted serial and TCP/Ethernet communication module for CCR remote access. IDM 8000 CCR remote control on serial and TCP protocol.
• Remote control: Parallel or serial interface
• Compatible with MAFI CCR system
• Copatiable with IDM8000 CCR
• Compatible with Backplane mount serial communication.
• Compatible with commercial and Defence aviation CCR system.
• Remote control system for accessing CCR and allied system over serial or TCP.
• Indigenized local Support/presence in India.
Application
• Remote control: Parallel or serial interface.
• Compatible with MAFI CCR system.
• Compatible with IDM8000 CCR.
• Compatible with Backplane mount serial communication.
• Compatible with commercial and Defence aviation CCR system.
• Remote control system for accessing CCR and allied system over serial or TCP.
• Indigenized local Support/presence in India.
• Easy in configuration using DIP switches.
Industrial Training at Shahjalal Fertilizer Company Limited (SFCL)MdTanvirMahtab2
This presentation is about the working procedure of Shahjalal Fertilizer Company Limited (SFCL). A Govt. owned Company of Bangladesh Chemical Industries Corporation under Ministry of Industries.
Hybrid optimization of pumped hydro system and solar- Engr. Abdul-Azeez.pdffxintegritypublishin
Advancements in technology unveil a myriad of electrical and electronic breakthroughs geared towards efficiently harnessing limited resources to meet human energy demands. The optimization of hybrid solar PV panels and pumped hydro energy supply systems plays a pivotal role in utilizing natural resources effectively. This initiative not only benefits humanity but also fosters environmental sustainability. The study investigated the design optimization of these hybrid systems, focusing on understanding solar radiation patterns, identifying geographical influences on solar radiation, formulating a mathematical model for system optimization, and determining the optimal configuration of PV panels and pumped hydro storage. Through a comparative analysis approach and eight weeks of data collection, the study addressed key research questions related to solar radiation patterns and optimal system design. The findings highlighted regions with heightened solar radiation levels, showcasing substantial potential for power generation and emphasizing the system's efficiency. Optimizing system design significantly boosted power generation, promoted renewable energy utilization, and enhanced energy storage capacity. The study underscored the benefits of optimizing hybrid solar PV panels and pumped hydro energy supply systems for sustainable energy usage. Optimizing the design of solar PV panels and pumped hydro energy supply systems as examined across diverse climatic conditions in a developing country, not only enhances power generation but also improves the integration of renewable energy sources and boosts energy storage capacities, particularly beneficial for less economically prosperous regions. Additionally, the study provides valuable insights for advancing energy research in economically viable areas. Recommendations included conducting site-specific assessments, utilizing advanced modeling tools, implementing regular maintenance protocols, and enhancing communication among system components.
CFD Simulation of By-pass Flow in a HRSG module by R&R Consult.pptxR&R Consult
CFD analysis is incredibly effective at solving mysteries and improving the performance of complex systems!
Here's a great example: At a large natural gas-fired power plant, where they use waste heat to generate steam and energy, they were puzzled that their boiler wasn't producing as much steam as expected.
R&R and Tetra Engineering Group Inc. were asked to solve the issue with reduced steam production.
An inspection had shown that a significant amount of hot flue gas was bypassing the boiler tubes, where the heat was supposed to be transferred.
R&R Consult conducted a CFD analysis, which revealed that 6.3% of the flue gas was bypassing the boiler tubes without transferring heat. The analysis also showed that the flue gas was instead being directed along the sides of the boiler and between the modules that were supposed to capture the heat. This was the cause of the reduced performance.
Based on our results, Tetra Engineering installed covering plates to reduce the bypass flow. This improved the boiler's performance and increased electricity production.
It is always satisfying when we can help solve complex challenges like this. Do your systems also need a check-up or optimization? Give us a call!
Work done in cooperation with James Malloy and David Moelling from Tetra Engineering.
More examples of our work https://www.r-r-consult.dk/en/cases-en/
Overview of the fundamental roles in Hydropower generation and the components involved in wider Electrical Engineering.
This paper presents the design and construction of hydroelectric dams from the hydrologist’s survey of the valley before construction, all aspects and involved disciplines, fluid dynamics, structural engineering, generation and mains frequency regulation to the very transmission of power through the network in the United Kingdom.
Author: Robbie Edward Sayers
Collaborators and co editors: Charlie Sims and Connor Healey.
(C) 2024 Robbie E. Sayers
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Unit-6 Semiconductor Manufacturing Process.pptx
1. Unit-6: Introduction to Semiconductor
Manufacturing Process
INTRODUCTION
Objective
The objective of this Unit is:
1.) Introduce the fabrication of integrated circuits
2.) Describe the basic fabrication process steps by which an integrated
circuit is made
Outline
• Integrated circuit fabrication
• Basic processing steps
3. Comparison of Bipolar and CMOS Technologies
Comparison of BJT and MOSFET technology from an analog viewpoint:
Feature BJT MOSFET
Cutoff Frequency(fT) 100 GHz 50 GHz (0.25µm)
Noise (thermal about the same) Less 1/f More 1/f
DC Range of Operation 9 decades of exponential
current versus vBE
2-3 decades of square law
behavior
Small Signal Output Resistance Slightly larger Smaller for short channel
Switch Implementation Poor Good
Capacitor Implementation Voltage dependent Reasonably good
Which is best?
• Almost every comparison favors the BJT, however a similar comparison made from a digital viewpoint
would come up on the side of CMOS.
• Therefore, since large-volume technology will be driven by digital demands, CMOS is an obvious
result as the technology of availability.
Other factors:
• The potential for technology improvement for CMOS is greater than for BJT
• Performance generally increases with decreasing channel length
BiCMOS may be the best compromise for the mixed signal system on a chip.
4. 0.5-0.8mm
n-type: 3-5 -cm
p-type: 14-16 -cm Fig. 2.1-1r
BASIC FABRICATION PROCESSES
Basic steps
• Wafer Cleaning
• Oxide growth
• Thermal diffusion
• Ion implantation
• Deposition
• Etching
• Epitaxy
Photolithography
Photolithography is the means by which the above steps are applied to selected areas
of the silicon wafer.
Silicon wafer
125-200 mm
(5"-8")
5. For Silicon substrate:-
RCA-1 cleaning has been done to remove the organic contaminants from the wafer. 5 parts
of DI water is mixed with 1 part of ammonia solution and 1 part of hydrogen peroxide [a].
RCA-2 cleaning, in which metal ions or thin oxide layer can be removed from it. 6 parts of
DI water along with 1 part of hydrochloric acid and 1 part of hydro peroxide has been used
for this process [a].
[a] Kern, FW. "Cleaning solutions based on hydrogen peroxide for use in silicon semiconductor technology." RCA
Rev. 31 (1970): 187.
Wafer Cleaning
6. Oxidation
Description:
Oxidation is the process by which a layer of silicon dioxide is grown on the surface of a
silicon wafer.
Original silicon surface
0.44 tox
tox
Silicon substrate
Silicon dioxide
Fig. 2.1-2
Uses:
• Protect the underlying material from contamination
• Provide isolation between two layers.
Very thin oxides (100Å to 1000Å) are grown using dry oxidation techniques. Thicker oxides (>1000Å)
are grown using wet oxidation techniques.
7. Diffusion
Diffusion is the movement of impurity atoms at the surface of the silicon into the bulk of the silicon.
Always in the direction from higher concentration to lower concentration.
High
Concentration
Low
Concentration
Fig. 2.1-3
Diffusion is typically done at high temperatures: 800 to 1400°C
ERFC Gaussian
t1 < t2 < t3
t1
t2
t3
Depth (x)
(b) a finite source of impurities at the surface.)
NB
N(x)
t
N(x)
3
NB
t1 < t2 < t3
t1 t2
Depth (x)
(a) Infinite source of impurities at the surface.
N0 N0
8. Ion Implantation
Ion implantation is the process by which impurity ions are accelerated to a high velocity and
physically lodged into the target material.
Path of
impurity
atom
FixedAtom
FixedAtom
FixedAtom
Impurity Atom
final resting place
Fig. 2.1-5
• Anneal is required to activate the impurity atoms and repair the physical damage to the crystal
lattice. This step is done at 500 to 800°C.
• Ion implantation is a lower temperature process compared to diffusion.
• Can implant through surface layers, thus it is useful for field-
threshold adjustment.
• Can achieve unique doping profile such as buried
concentration peak.
N(
x)
N
B
0 Depth (x)
Concentration peak
Fig. 2.1-
6
9. Deposition
Deposition is the means by which various materials are deposited on the silicon wafer.
Examples:
• Silicon nitride (Si3N4)
• Silicon dioxide (SiO2)
• Aluminum
• Polysilicon
There are various ways to deposit a material on a substrate:
• Chemical-vapor deposition (CVD)
• Low-pressure chemical-vapor deposition (LPCVD)
• Plasma-assisted chemical-vapor deposition (PECVD)
• Sputter deposition
Material that is being deposited using these techniques cover the entire wafer.
10. Etching
Etching is the process of selectively removing a layer of material. When etching is
performed, the etchant may remove portions or all of:
• The desired material
• The underlying layer
• The masking layer
Important considerations:
• Anisotropy of the etch is defined as,
A = 1-(lateral etch rate/vertical etch rate)
• Selectivity of the etch (film to mask and film to substrate) is defined as,
Sfilm-mask
=
film etch rate
mask etch rate
Mask
Film
b
a
c
Mask
Film
Underlying layer
(a) Portion of the top layer ready for etching. (b) Horizontal etching and etching of underlying layer.
A = 1 and Sfilm-mask = are desired.
There are basically two types of etches:
• Wet etch which uses chemicals
• Dry etch which uses chemically active ionized gases.
Fig. 2.1-7 Selectivity
Anisotropy
Underlying layer
Selectivity
11. Si Si
Si Si Si Si Si Si Si Si Si Si Si Si
Si Si Si Si
Si
+ Si
Si
Si Si Si
Si Si - Si
Si Si Si
Si Si Si
Si Si Si
Si Si
- Si
Si Si Si
Si Si Si
- Si
Si Si Si Si
Si Si Si Si Si Si
- -
-
+
+
Si Si Si Si Si Si
+
Si Si Si Si Si
Si Si
Epitaxy
Epitaxial growth consists of the formation of a layer of single-crystal silicon on the surface of the
silicon material so that the crystal structure of the silicon is continuous across the interfaces.
• It is done externally to the material as opposed to diffusion which is internal
• The epitaxial layer (epi) can be doped differently, even oppositely, of the material on which it
grown
• It accomplished at high temperatures using a chemical reaction at the surface
• The epi layer can be any thickness, typically 1-20 microns
Gaseous cloud containing SiCL4 or SiH4
Si Si Si
Si+
Si Si Si
Fig. 2.1-7.5
12. Similar results can be obtained through bottom-up and top-down processes
• Top-down approach
• Bottom-up approach
Fabrication Approach
14. Clean wafer
Deposit barrier layer
SiO2
Coat with photoresist
Soft bake
Align masks
Expose pattern
Develop photoresist
Hard bake
Etch windows in barrier layer
Remove photoresist
Source: Jaeger, Richard C. (2002). Introduction to Microelectronic
Fabrication (2nd ed.). Prentice Hall. ISBN 0-201-44494-1.
15. Photolithography
Components
• Photoresist material
• Mask
• Material to be patterned (e.g., oxide)
Positive photoresist
Areas exposed to UV light are soluble in the developer
Negative photoresist
Areas not exposed to UV light are soluble in the developer
Steps
1. Apply photoresist
2. Soft bake (drives off solvents in the photoresist)
3. Expose the photoresist to UV light through a mask
4. Develop (remove unwanted photoresist using solvents)
5. Hard bake ( 100°C)
6. Remove photoresist (solvents)
16. Illustration of Photolithography -
Exposure
The process of exposing selective
areas to light through a photo- mask is
called printing.
Types of printing include:
• Contact printing
• Proximity printing
• Projection printing
Photoresist
Polysilicon
Photomask
UV Light
Photomask
Fig. 2.1-8
19. Start with bulk wafer
Alter area of wafer where
structure is to be created
by adding polymer or seed
crystals or other
techniques.
Grow or assemble the
structure on the area
determined by the seed
crystals or polymer.
(self assembly)
Bottom Up Process
20. Allows smaller geometries than photolithography.
Certain structures such as Carbon Nanotubes and Si nanowires are
grown through a bottom-up process.
New technologies such as organic semiconductors employ bottom-up
processes to pattern them.
Can make formation of films and structures much easier.
Is more economical than top-down in that it does not waste material to
etching.
Why is Bottom-Up Processing Needed?
21. SUMMARY
Fabrication is the means by which the circuit components, both active and
passive, are built as an integrated circuit.
Basic process steps include:
• Oxide growth
• Thermal diffusion
• Ion implantation
• Deposition
• Etching
• Epitaxy
These steps are restricted to a physical area by the use of photolithography.
The use of photolithography to apply a process to a certain area is called a
masking step.
The complexity of a process can be measured in the terms of the number of
masking steps or masks required to implement the process.
Editor's Notes
Positive Photoresist AZ5214E.
Developer:- Alkali solution (whose pH is greater than 7).
Resist Removel:- +ve:-Trichloroethylene (TCE), -ve:- Methylethyl Ketone.