7.2. dopant diffusion 3,2013 microtech
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Microelectronics Technology discusses advanced models for dopant diffusion. Advanced models account for electric field effects, concentration-dependent diffusion, and dopant segregation. Some models are based on point defect driven diffusion at the atomic scale. Modifications to Fick's laws are also discussed, including electric field enhancement effects which become important at higher doping concentrations. Process simulations demonstrate how electric fields can dominate doping distribution near MOS device source/drain regions. Concentration dependent diffusivities and dopant segregation effects are also covered.
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Dr. Mitat A. Birkan presents an overview of his program, Space Propulsion and Power, at the AFOSR 2013 Spring Review. At this review, Program Officers from AFOSR Technical Divisions will present briefings that highlight basic research programs beneficial to the Air Force.
Ion Implantation UPS.pdf
Ion implantation allows for precise introduction of dopants into semiconductors. It involves ionizing and accelerating ions before injecting them into the target wafer. This creates a dopant profile under the surface. The profile characteristics like peak concentration and depth depend on implantation energy and dose. Implantation causes lattice damage but annealing restores the crystal structure and activates dopants. Implantation offers advantages over diffusion like independent control of concentration and depth with low temperature processing.
Report_Paulo_Melo_LabI
This document summarizes the design, fabrication, and testing of a microfluidic chip prototype for manipulating particles using dielectrophoresis (DEP). Finite element modeling was used to simulate the electric field distributions around quadrupole and comb electrode geometries. A prototype was fabricated containing these electrode designs in two separate microchannels. Silica microspheres were successfully manipulated within the chip using positive and negative DEP sequences, concentrating particles in the electrode areas. Testing demonstrated the potential of this technique for manipulating and separating microparticles in integrated microfluidic devices.
Poster Presentation Final
The document describes simulations of a BioFET device for detecting DNA hybridization. The simulations tested different doping configurations and found that a PPP+ configuration increased sensitivity 30 times over a PPP configuration. Future work will involve fabricating a device based on these findings and measuring its electrical characteristics to detect hybridized DNA.
SUPERJUNCTION IN Silicon Carbide Diodes
This document summarizes a study of a 4H-SiC superjunction power diode through simulation. It discusses the methodology, which involves a literature survey and simulations using semiconductor simulation software. It provides an introduction to superjunction concepts and comparisons between different materials like SiC and Si. The results section shows electric field simulations of Si diodes with and without superjunction structures. The work plan is to extend the simulations to 4H-SiC diodes and later to SiC MOSFETs.
OC_Part (7).pdf
A detector's function is to convert an optical signal into an electrical signal. Detector performance determines the overall performance of an optical communication system by influencing factors like signal attenuation and repeater station requirements. Improvements to detector characteristics and performance can lower capital and maintenance costs. Key detector properties include sensitivity, fidelity, response time, noise, reliability and cost. Common photodetector materials include silicon, germanium and InGaAs, each optimized for different wavelength ranges.
Electro polishing of ti64 am
Electropolishing of Ti6Al4V fabricated by powder bed fusion additive manufacturing. Electropolishing (EP) is a metal finishing process that removes material from a metal or alloy through anodic dissolution where material is removed ion by ion. Unlike mechanical processes, EP is non-contact and damage free. It involves immersing a workpiece in an electrolyte bath and applying a current, causing the metal surface to dissolve into the electrolyte. Key factors that influence the EP process are electrolyte temperature and composition, polishing time, initial surface roughness, and current density. EP results in smooth, bright surfaces through the elimination of roughness at both the micro and macro scale.
Electrospn 1 ramakrishna-full
The document discusses challenges and potential solutions for scaling up electrospinning and electrospraying processes to enable mass production of functional nanomaterials. It describes how using multiple nozzles can increase production rates but leads to issues with uniformity due to charge interference between nozzles. Porous surface electrodes and needleless electrodes using sharp edges are alternative approaches that eliminate clogging but require higher voltages and provide less control over fiber diameters. Overall the document analyzes problems encountered in scaling up these nanomaterial fabrication techniques and possible technical solutions.
A Hybrid Model to Predict Electron and Ion Distributions in Entire Interelect...
Atmospheric direct current (dc) corona discharge
from thin wires or sharp needles has been widely used as an ion
source in many devices such as photocopiers, laser printers, and
electronic air cleaners. Existing numerical models to predict the
electron distribution in the corona plasma are based on charge
continuity equations and the simplified Boltzmann equation. In
this paper, negative dc corona discharges produced from a thin
wire in dry air are modeled using a hybrid model of modified
particle-in-cell plus Monte Carlo collision (PIC-MCC) and a
continuum approach. The PIC-MCC model predicts densities of
charge carriers and electron kinetic energy distributions in the
plasma region, while the continuum model predicts the densities of
charge carriers in the unipolar ion region. Results from the hybrid
model are compared with those from prior continuum models.
Superior to the prior continuum model, the hybrid model is able
to predict the voltage–current curve of corona discharges. The
PIC-MCC simulation results also suggest the validity of the local
approximation used to solve the Boltzmann equation in the prior
continuum model.
Paloma Poster 2015
This document summarizes research into developing novel dye molecules containing ferrocene and BODIPY groups for use in dye-sensitized solar cells. The dyes were designed with an electron donor (ferrocene), pi-spacer (acetylene), and electron acceptor (BODIPY and cyanoacrylic acid) to encourage light absorption and charge separation. The dyes exhibited broad light absorption, reversible redox behavior, and a desirable shift of electron density from donor to acceptor when excited. While showing promise for solar energy applications, further testing of the dyes in solar cell devices is still needed to verify their performance.
Introduction to Photoelectrochemical (PEC) Water Splitting
Provided with the basics of PEC along with the brief introduction to semiconductors by taking references from books and journals.
PAPER ELECTROPHORESIS.pptx
Electrophoresis is a scientific laboratory technique that is used to separate DNA, RNA, or protein molecules based on their size and electrical charge. An electric current is passed through the molecules to move them so that they can be separated via a gel. The pores present in the gel work like a sieve, allowing smaller molecules to pass through more quickly and easily than the larger molecules. According to the way conditions are adjusted during electrophoresis, the molecules can be separated in the desired size range.
What is electrophoresis and what are its uses?
Electrophoresis is a very broadly used technique that, fundamentally, applies electric current to biological molecules – they’re usually DNA, but they can be protein or RNA, too – and separates these fragments into pieces that are larger or smaller in size.
The phenomenon of electrophoresis was first observed by Russian professors Peter Ivanovich Strakhov and Ferdinand Frederic Reuss in 1807 at Moscow University. A constant application of electric field caused the particles of clay dispersed in water to migrate, showing an electrokinetic phenomenon.
Electrophoresis can be defined as an electrokinetic process that separates charged particles in a fluid using an electrical field of charge. Electrophoresis of cations or positively charged ions is sometimes referred to as cataphoresis (or cataphoretic electrophoresis). In contrast, sometimes, the electrophoresis of anions or negatively charged ions is referred to as anaphoresis (or anaphoric electrophoresis).
It’s used in a variety of applications. Though it is most often used in life sciences to separate protein molecules or DNA, it can be achieved through several different techniques and methods depending upon the type and size of the molecules.
The methods differ in some ways, but all we need is a source for the electrical charge, a support medium and a buffer solution. Electrophoresis is also used in laboratories for the separation of molecules based on their size, density and purity.
The method used to separate macromolecules such as DNA, RNA, or protein molecules is known as gel electrophoresis.
It is used in forensics for –
Nucleic acid molecule sizing
DNA fragmentation for southern blotting
RNA fragmentation for northern blotting
Protein fragmentation for western blotting
Separation of PCR products analysis
Detection and analysis of variations or mutations in the sequence
Its clinical applications involve –
Serum protein electrophoresis
Lipoprotein analysis
Diagnosis of haemoglobinopathies and hemoglobin A1c.
The fundamental principle of electrophoresis is the existence of charge separation between the surface of a particle and the fluid immediately surrounding it. An applied electric field acts on the resulting charge density, causing the particle to migrate and the fluid around the particle to flow.
It is the process of separation or purification of protein molecules, DNA, or RNA that differ in charge, size.
Electrical double layer theory
The document discusses the electrical double layer (EDL) that occurs between ions or molecules in solution and an electrode surface. The EDL consists of two layers - the diffuse double layer and the Stern layer. The Stern layer contains ions that are tightly bound to the surface due to chemical interactions, while the diffuse double layer contains loosely associated counterions. Several models of the EDL are described, including the Helmholtz model, Gouy-Chapman model, and Gouy-Chapman Stern model. Applications of the EDL concept include zeta potential measurement and the DLVO theory of colloidal stability.
Module PHY6002 Inorganic Semiconductor Nanostructures Lectur.docx
This document summarizes key techniques for fabricating semiconductor nanostructures including quantum wells, wires, and dots. Epitaxial growth techniques like molecular beam epitaxy and metal organic vapor phase epitaxy are used to produce high quality quantum wells with very thin and abrupt layers. Lithography and etching can be used to define wires or dots on a surface which are then etched to produce free-standing nanostructures, though the etching damages the surface. Cleaved edge overgrowth involves cleaving a substrate with quantum wells at an angle and regrowing layers to produce T-shaped quantum wires. Growth on vicinal or patterned substrates can be used to direct growth in grooves or pits to form wires or dots with better quality than lithography
03 partial discharge theory cutler-hammer
This document discusses partial discharge theory and its applications for monitoring electrical systems. Partial discharge monitoring is an effective online predictive maintenance tool for motors, generators, and other electrical equipment operating at 4160 volts or above. Understanding partial discharge theory and how it relates to early detection of insulation deterioration is important for properly evaluating this technique. The document presents simplified models of partial discharge voids and insulation systems to promote understanding of partial discharge technology.
INTERNSHIP-REPORT-CHIRAS
The document reports on an experiment measuring the interstitial iron concentration in multicrystalline silicon wafers using photoconductance and photoluminescence techniques. Samples underwent chemical treatment and passivation but yielded unexpectedly low minority carrier lifetimes (<20 μs) preventing analysis. Possible reasons for this include contamination during passivation from an unclean substrate holder or imperfections introduced during chemical treatment. Further experiments with a cleaned chamber could provide different results.
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Birkan - Space Propulsion and Power - Spring Review 2013
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Introduction to Photoelectrochemical (PEC) Water Splitting
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Module PHY6002 Inorganic Semiconductor Nanostructures Lectur.docx
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More from Bhargav Veepuri
6.2. thermal oxidation 3 microtech,2013
Thermal oxidation of silicon produces silicon dioxide films of varying thickness and color. Capacitance-voltage measurements can be used to characterize semiconductor-insulator structures and extract properties like oxide thickness and charge densities. Advanced models have been developed to better understand oxidation kinetics and effects like oxidation-enhanced diffusion. Two-dimensional diffusion and stress effects due to volume expansion must be considered for non-planar silicon surfaces. Simulation tools can model oxidation processes and stress-dependent growth rates.
5.2. lithography 3,4,5 final,2013
This document discusses various topics related to photolithography including:
- Issues that can arise when exposing photoresist such as resist flowing, thickness variations, and reflections causing standing waves.
- The use of multi-layer resists and etching to produce a uniform imaging layer.
- Techniques for fabricating masks including the use of quartz, borosilicate glass, or soda lime glass substrates and coating materials like photoemulsion or chromium.
- Inspection and quality control of fabricated masks.
- Lithography simulation tools based on optical and resist chemistry models to simulate the aerial image and latent image formation.
5.1. lithography 1,2.final 2013
This document discusses photolithography and pattern definition in microelectronics technology. It covers topics such as photolithography requirements for future VLSI generations, the pattern information transfer process using photosensitive materials, the basic photolithography process flow, different photolithography techniques including light sources, wafer exposure systems, and photoresists. It also discusses issues that can arise during photoresist exposure like thickness variations, reflections, and the use of multilayer resists.
4. contamination reduction
The document discusses three levels of contamination reduction in semiconductor manufacturing:
Level 1 involves keeping clean rooms free of particles through strict air purity standards.
Level 2 is wafer cleaning to remove unwanted contaminants from wafer surfaces.
Level 3 is gettering, where silicon dioxide precipitates or damage to wafer backs effectively "trap" contaminant particles within the wafer bulk. Gettering helps prevent particles from reaching the device layer. The document also models how particle contamination affects yield and the need for extremely low defect densities with future technology nodes.
3. crystal growth and wafer fabrication
The document discusses silicon wafer fabrication. Crystals are grown using the Czochralski method, which involves melting polysilicon and pulling a crystal seed to form a boule. The boule is sliced and polished into wafers. Wafers are characterized through measurements of resistivity, carrier concentration, and mobility. Crystal growth is modeled to understand the influence of parameters like pull rate and dopant segregation coefficients. Defects, dopants, and point defects in silicon crystals are also modeled mathematically.
3. adressingmodes1
The document discusses the execution unit and addressing modes of the 8086 microprocessor. It describes the various registers in the execution unit, including the flag register which contains status and control flags. It also details the different types of registers - pointer, index, and their uses. Finally, it explains the seven addressing modes of 8086 including register, immediate, direct, register indirect, based, indexed, and based indexed addressing modes along with examples.
Cmos process flow
This document describes the key process steps in a standard CMOS fabrication process flow. It begins with an overview of basic CMOS circuits and substrate preparation. Then each major step is outlined, including well formation through ion implantation, gate oxide growth, polysilicon deposition and patterning, source/drain implantation and annealing. Additional metal layers are deposited and patterned before passivation completes the CMOS structure. The process requires 16 photomasks and over 100 individual process steps to fabricate modern integrated circuits using complementary NMOS and PMOS transistors.
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The rivalry between prominent international actors for dominance over Central Asia's hydrocarbon
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7.2. dopant diffusion 3,2013 microtech
- 2. Advanced Models • Advanced diffusion process models include the modifications to Fick’s laws to account for electric field effects, concentration-dependent diffusion, dopant segregation etc. • Some advanced models based on point-defect driven diffusion processes at atomic scale have also been developed which predict doping profile very accurately.
- 3. Modifications Of Fick's Laws A. Electric field effects • When the doping is higher than ni, £-field effects become important. • ε -field induced by higher mobility of electrons and holes compared with dopant ions. • ε -field enhances the diffusion of dopants causing the field 2 4 i 2 nC C 1h Where X C hDf + += ∂ ∂ −= If all dopants is ionized C: Net Doping concentration h: Electric field enhancement factor
- 5. Process Simulation • SUPREM simulation at 1000˚C. Note the boron profile after As N+ S/D regions e -field effects added. Significant change in the B profile in a NMOS Transistor. • Field effects can dominate the doping distribution near the source/drain of a MOS device (SUPREM simulation).
- 6. Dr. G. Eranna Integrated Circuit Fabrication Technology © CEERI Pilani Modifications Of Fick's Laws • Error function profile • Isoconcentration exp. B 10 & B 11
- 7. Si B In As Sb P D0.0 cm2 sec-1 560 0.05 0.6 0.011 0.214 3.85 D0.E eV 4.76 3.5 3.5 3.44 3.65 3.66 D+ .0 cm2 sec-1 0.95 0.6 D+ .E eV 3.5 3.5 D.0 cm2 sec-1 31.0 15.0 4.44 D.E eV 4.15 4.08 4.0 D= .0 cm2 sec-1 44.2 D= .E eV 4.37 Concentration dependent diffusivities
- 8. Segregation TSUPREM IV Plot of B contours after oxidation of uniformly B-doped substrate • Dopants have different solubilities in different material: Redistribute until chemical potential is same on both sides of the interface. • Segregation Coefficient: Ratio of equilibrium doping conc.on each side of interface K0=Csi/CSiO2 K0= 0.3 (B) K0=10 (As,Sb,P)
- 9. Dr. G. Eranna Integrated Circuit Fabrication Technology © CEERI Pilani Segregation
- 10. Interfacial Dopant Pile-up • Dopants may also pile up at the interface layer, perhaps only a monolayer thick. Interfacial dopant dose loss or pile-up may consume up to 50% of the dose in a shallow layer. • In the experiment (right) 40% of the dose was lost in a 30 sec anneal.
- 11. Summary of Macroscopic Approach to Diffusion • Fick's first law correctly describes dopant diffusion in the limit of low concentrations. • "Fixes" to this law to account for experimental observations (concentration dependent diffusion and e -field effects), are useful, but at this point the complexity of the "fixes" begins to outweigh their usefulness. We turn to an atomistic view of diffusion for a deeper understanding.
- 13. Kick-out and Interstitial(cy) Assisted Mechanisms. Mathematically it is identical to the kick out process and both are referred to as interstitial assisted diffusion
- 15. Inferences About Mechanisms • Oxidation provides an I injection source. • Nitridation provides a V injection source. • Stacking faults serve as "detectors" as do dopant which diffuse. • Roles of both I &V in assisting dopant diffusion in Si
- 17. Atomic Scale Interactions • Consider the simple Dopant-Defect Interactions A + I <----> AI • For example OED is explained because oxidation injects I driving the equation to the right, creating more AI pairs and enhancing the dopant D. • Even under inert conditions, atomic-level description says that dopant diffusion from the surface contains lot of AI,driving above Eq. to left thus pumping interstitials (Chemical Pumping) • In the more complex example below, phosphorus diffuses with I, and releases them in the bulk. This enhances the tail region D.
- 18. Dr. G. Eranna Integrated Circuit Fabrication Technology © CEERI Pilani Emitter Push Effect Pumping of interstitials by diffusion of P which builds up a high supersaturation of these point defects in the interior of sample
- 19. Summary of Key Ideas • Selective doping is a key process in fabricating semiconductor devices. • Doping atoms generally must sit on substitutional sites to be electrically active. • Both doping concentration and profile shape are critical in device electrical characteristics. • Ion implantation is the dominant process used to introduce dopant atoms. This creates damage and thermal annealing is required to repair this damage. • Powerful simulation tools exist today which model diffusion processes and can predict complex doping profiles.