1. The document discusses different types of semiconductor memory including RAM, ROM, PROM, EPROM, EEPROM, and flash memory.
2. It describes the operation and structure of both dynamic RAM (DRAM) and static RAM (SRAM). DRAM uses capacitors to store bits and requires refreshing, while SRAM uses flip-flops and does not require refreshing.
3. The document also covers various RAM technologies including synchronous DRAM (SDRAM), double data rate SDRAM (DDR SDRAM), Rambus DRAM (RDRAM), error correction codes, and cache DRAM.
Highlighted notes while studying Concurrent Data Structures:
DDR3 SDRAM
Source: Wikipedia
Double Data Rate 3 Synchronous Dynamic Random-Access Memory, officially abbreviated as DDR3 SDRAM, is a type of synchronous dynamic random-access memory (SDRAM) with a high bandwidth ("double data rate") interface, and has been in use since 2007. It is the higher-speed successor to DDR and DDR2 and predecessor to DDR4 synchronous dynamic random-access memory (SDRAM) chips. DDR3 SDRAM is neither forward nor backward compatible with any earlier type of random-access memory (RAM) because of different signaling voltages, timings, and other factors.
Wikipedia is a free online encyclopedia, created and edited by volunteers around the world and hosted by the Wikimedia Foundation.
Memory organization in computer architectureFaisal Hussain
Memory organization in computer architecture
Volatile Memory
Non-Volatile Memory
Memory Hierarchy
Memory Access Methods
Random Access
Sequential Access
Direct Access
Main Memory
DRAM
SRAM
NVRAM
RAM: Random Access Memory
ROM: Read Only Memory
Auxiliary Memory
Cache Memory
Hit Ratio
Associative Memory
Highlighted notes while studying Concurrent Data Structures:
DDR3 SDRAM
Source: Wikipedia
Double Data Rate 3 Synchronous Dynamic Random-Access Memory, officially abbreviated as DDR3 SDRAM, is a type of synchronous dynamic random-access memory (SDRAM) with a high bandwidth ("double data rate") interface, and has been in use since 2007. It is the higher-speed successor to DDR and DDR2 and predecessor to DDR4 synchronous dynamic random-access memory (SDRAM) chips. DDR3 SDRAM is neither forward nor backward compatible with any earlier type of random-access memory (RAM) because of different signaling voltages, timings, and other factors.
Wikipedia is a free online encyclopedia, created and edited by volunteers around the world and hosted by the Wikimedia Foundation.
Memory organization in computer architectureFaisal Hussain
Memory organization in computer architecture
Volatile Memory
Non-Volatile Memory
Memory Hierarchy
Memory Access Methods
Random Access
Sequential Access
Direct Access
Main Memory
DRAM
SRAM
NVRAM
RAM: Random Access Memory
ROM: Read Only Memory
Auxiliary Memory
Cache Memory
Hit Ratio
Associative Memory
*Note : Di ko na inaupload kasi ayaw daw madownload sa file share ewan ko kung bakit.but dito ko nalang sa SlideShareinaupload NOTE# nandito na ang PHILOSOPHY Lectures and Comorg Lectures.
RAM (Random access memory) is the place in a computer where the operating system, application programs, and data in current use are kept so that they can be quickly reached by the computer's processor.
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5. Dynamic RAM
• Bits stored as charge in capacitors
• Charges leak
• Need refreshing even when powered
• Simpler construction
• Smaller per bit
• Less expensive
• Need refresh circuits
• Slower
• Main memory
• Essentially analogue
—Level of charge determines value
7. DRAM Operation
• Address line active when bit read or written
—Transistor switch closed (current flows)
• Write
—Voltage to bit line
– High for 1 low for 0
—Then signal address line
– Transfers charge to capacitor
• Read
—Address line selected
– transistor turns on
—Charge from capacitor fed via bit line to sense amplifier
– Compares with reference value to determine 0 or 1
—Capacitor charge must be restored
8. Static RAM
• Bits stored as on/off switches
• No charges to leak
• No refreshing needed when powered
• More complex construction
• Larger per bit
• More expensive
• Does not need refresh circuits
• Faster
• Cache
• Digital
—Uses flip-flops
10. Static RAM Operation
• Transistor arrangement gives stable logic
state
• State 1
—C1 high, C2 low
—T1 T4 off, T2 T3 on
• State 0
—C2 high, C1 low
—T2 T3 off, T1 T4 on
• Address line transistors T5 T6 is switch
• Write – apply value to B & compliment to
B
• Read – value is on line B
11. SRAM v DRAM
• Both volatile
—Power needed to preserve data
• Dynamic cell
—Simpler to build, smaller
—More dense
—Less expensive
—Needs refresh
—Larger memory units
• Static
—Faster
—Cache
12. Read Only Memory (ROM)
• Permanent storage
—Nonvolatile
• Microprogramming (see later)
• Library subroutines
• Systems programs (BIOS)
• Function tables
13. Types of ROM
• Written during manufacture
—Very expensive for small runs
• Programmable (once)
—PROM
—Needs special equipment to program
• Read “mostly”
—Erasable Programmable (EPROM)
– Erased by UV
—Electrically Erasable (EEPROM)
– Takes much longer to write than read
—Flash memory
– Erase whole memory electrically
14. Organisation in detail
• A 16Mbit chip can be organised as 1M of
16 bit words
• A bit per chip system has 16 lots of 1Mbit
chip with bit 1 of each word in chip 1 and
so on
• A 16Mbit chip can be organised as a 2048
x 2048 x 4bit array
—Reduces number of address pins
– Multiplex row address and column address
– 11 pins to address (211
=2048)
– Adding one more pin doubles range of values so x4
capacity
15. Refreshing
• Refresh circuit included on chip
• Disable chip
• Count through rows
• Read & Write back
• Takes time
• Slows down apparent performance
20. Interleaved Memory
• Collection of DRAM chips
• Grouped into memory bank
• Banks independently service read or write
requests
• K banks can service k requests
simultaneously
21. Error Correction
• Hard Failure
—Permanent defect
• Soft Error
—Random, non-destructive
—No permanent damage to memory
• Detected using Hamming error correcting
code
23. Advanced DRAM Organization
• Basic DRAM same since first RAM chips
• Enhanced DRAM
—Contains small SRAM as well
—SRAM holds last line read (c.f. Cache!)
• Cache DRAM
—Larger SRAM component
—Use as cache or serial buffer
24. Synchronous DRAM (SDRAM)
• Access is synchronized with an external clock
• Address is presented to RAM
• RAM finds data (CPU waits in conventional DRAM)
• Since SDRAM moves data in time with system
clock, CPU knows when data will be ready
• CPU does not have to wait, it can do something
else
• Burst mode allows SDRAM to set up stream of
data and fire it out in block
• DDR-SDRAM sends data twice per clock cycle
(leading & trailing edge)
27. RAMBUS
• Adopted by Intel for Pentium & Itanium
• Main competitor to SDRAM
• Vertical package – all pins on one side
• Data exchange over 28 wires < cm long
• Bus addresses up to 320 RDRAM chips at
1.6Gbps
• Asynchronous block protocol
—480ns access time
—Then 1.6 Gbps
32. Cache DRAM
• Mitsubishi
• Integrates small SRAM cache (16 kb) onto
generic DRAM chip
• Used as true cache
—64-bit lines
—Effective for ordinary random access
• To support serial access of block of data
—E.g. refresh bit-mapped screen
– CDRAM can prefetch data from DRAM into SRAM
buffer
– Subsequent accesses solely to SRAM