By
Ms.J.Shiny Christobel
Assistant Professor/ ECE
Sri Ramakrishna Institute of Technology, Coimbatore
1
 It is a properly doped Pn junction diode
 The arrowhead on a Zener diode symbol points in the
direction of forward current when the diode is forward
biased.
 The Zener diode is normally operated in reverse
breakdown and the current direction is then from anode to
cathode
6/13/2024 2
 The most basic Zener diode circuit consist of a single Zener
diode and a resister.
 The Zener diode provides the reference voltage, but a series
resistor must be in place to limit the current into the diode
otherwise a large amount of current would flow through it and
it could be destroyed.
6/13/2024 3
 When a Zener diode is forward biased, it operates
as a normal diode.
 In forward biased P side connected to +ve and N side
connected to –ve terminal of battery. In this case the
electrons and holes are swept across the junction an
large current flow through it.
6/13/2024 4
 In case of reverse biased current practically zero and
at certain voltage which called Zener voltage the
current increasessharply.
 Each Zener diode has breakdown rating which
specifies the max voltage that can be dropped
across it.
6/13/2024 5
6/13/2024 6
The figure shows, theforward characteristics is same as
that of ordinary forward biasedjunction diode.
6/13/2024 7
 In reverse direction however there is a very small
leakage current between 0V an the Zener voltage –i.e.
tiny amount of current is able toflow.
 Then, when the voltage reaches the breakdown
voltage or Zener voltage (Vz), suddenly current flow
throughit.
6/13/2024 8
The Working Principle of zener diode lies in the cause of
breakdown for a diode in reverse biased condition.
Normally there are two types of breakdown.
 Zener Breakdown
 Avalanche Breakdown
6/13/2024 9
 The reverse bias on a crystal diode is increased, a critical
voltage, called Breakdown voltage is reached where the
reverse current increases sharply to a high value
 The breakdown region is the knee of the reverse
characteristic as shown in graph
 The breakdown voltage is sometimes called Zener
Voltage(Vz) and the sudden increase in current is known as
Zener Current
6/13/2024 10
6/13/2024 11
 The breakdown or zener voltage depends upon the
amount of doping.
 If the diode is heavily doped, depletion layer will be
thin and consequently the breakdown of the junction
will occur at a lower reverse voltage
 A lightly doped diode has a higher breakdown voltage
 Zener diode is a crystal diode that is properly doped to
have a sharp breakdown voltage
6/13/2024 12
 This type of breakdown occurs at the reverse bias
voltage above 8V and higher.
 It occurs for lightly doped diode with large breakdown
voltage.
6/13/2024 13
 As minority charge carriers (electrons) flow across the
device. They tend to collide with the electrons in the
covalent bond and cause the covalent bond to disrupt. As
voltage increases, the kinetic energy (velocity) of the
electrons also increases. The covalent bonds are more
easily disrupted, causing an increase in electron hole
pairs. The avalanche breakdown voltage increases with
temperature.
6/13/2024 14
• This provides a constant voltage from a source.
• Zener diode of zener voltage VZ is reverse connected
across the load RL.
• The series resistance R absorbs the output voltage
fluctuations to maintain constant voltage across the
load.
6/13/2024 15
• The zener will maintain a constant voltage VZ(=E0)
across the load until input voltage does not fall below
VZ.
• The circuit should be designed in a manner such that
even if the input voltage Ei and load resistance RL
increases over a wide range, the load voltage E0
remains constant.
6/13/2024 16
Case 1:
• In the breakdown region zener diode is equivalent to
a battery VZ if the input voltage is increased.
6/13/2024 17
 Excess voltage is dropped across the series resistance R
which in turn increases the total value of current I.
 The zener will conduct the increase of current in I
when the load current remains constant. Hence the
output voltage E0 remains constant.
Case 2:
 If the input voltage is constant the load resistance RL
decreases which cause an increase in load current.
6/13/2024 18
Case 2:
• Voltage drop in a resistor cannot produce an extra
current from a source which will not change as the
zener is within its regulating range.
• Additional load current will come from a decrease in
zener current IZ.
• Voltagedrop across R=Ei-E0
• Current through R=IZ+IL
6/13/2024 19
 Varactor Diode is a reverse biased p-n junction
diode, whose capacitance can be varied
electrically.
 It is well known that the operation of the p-n
junction depends on the bias applied which can
be either forward or reverse in characteristic
 Under Reverse bias condition, the p-n junction
can be considered to be analogous to a capacitor
where the p and n layers represent the two plates
of the capacitor while the depletion region acts
as a Dielectric separating them.
6/13/2024 20
 Varactor diode as a capacitor
6/13/2024 21
Where, Cj is the total capacitance of the
junction.
ε is the permittivity of the semiconductor
material.
A is the cross-sectional area of the
junction.
d is the width of the depletion region
 The relationship between the capacitance and
the reverse bias voltage is given as
6/13/2024 22
Where, Cj is the capacitance of the varactor diode. C is the capacitance
of the varactor diode when unbiased.
K is the constant, often considered to be 1. Vb is the barrier potential.
VR is the applied reverse voltage. m is the material dependent constant.
 This indicates that the maximum operating frequency of the circuit is
dependent on the series resistance (Rs) and the diode capacitance, which can
be mathematically given as
6/13/2024 23
 Width of the depletion region d is inversely
proportional to C.
 This means that the junction capacitance of
the varactor diode decreases with an increase
in the depletion region width caused to due
to an increase in the reverse bias voltage (VR)
6/13/2024 24
 By controlling the level of doping, the varactor diodes can be
manufactured with a definite C-V curve. Depending on this,
varactor diodes can be classified into two types viz., abrupt
varactor diodes and hyper-abrupt varactor diodes.
6/13/2024 25

Zener Diode and its V-I Characteristics and Applications

  • 1.
    By Ms.J.Shiny Christobel Assistant Professor/ECE Sri Ramakrishna Institute of Technology, Coimbatore 1
  • 2.
     It isa properly doped Pn junction diode  The arrowhead on a Zener diode symbol points in the direction of forward current when the diode is forward biased.  The Zener diode is normally operated in reverse breakdown and the current direction is then from anode to cathode 6/13/2024 2
  • 3.
     The mostbasic Zener diode circuit consist of a single Zener diode and a resister.  The Zener diode provides the reference voltage, but a series resistor must be in place to limit the current into the diode otherwise a large amount of current would flow through it and it could be destroyed. 6/13/2024 3
  • 4.
     When aZener diode is forward biased, it operates as a normal diode.  In forward biased P side connected to +ve and N side connected to –ve terminal of battery. In this case the electrons and holes are swept across the junction an large current flow through it. 6/13/2024 4
  • 5.
     In caseof reverse biased current practically zero and at certain voltage which called Zener voltage the current increasessharply.  Each Zener diode has breakdown rating which specifies the max voltage that can be dropped across it. 6/13/2024 5
  • 6.
  • 7.
    The figure shows,theforward characteristics is same as that of ordinary forward biasedjunction diode. 6/13/2024 7
  • 8.
     In reversedirection however there is a very small leakage current between 0V an the Zener voltage –i.e. tiny amount of current is able toflow.  Then, when the voltage reaches the breakdown voltage or Zener voltage (Vz), suddenly current flow throughit. 6/13/2024 8
  • 9.
    The Working Principleof zener diode lies in the cause of breakdown for a diode in reverse biased condition. Normally there are two types of breakdown.  Zener Breakdown  Avalanche Breakdown 6/13/2024 9
  • 10.
     The reversebias on a crystal diode is increased, a critical voltage, called Breakdown voltage is reached where the reverse current increases sharply to a high value  The breakdown region is the knee of the reverse characteristic as shown in graph  The breakdown voltage is sometimes called Zener Voltage(Vz) and the sudden increase in current is known as Zener Current 6/13/2024 10
  • 11.
  • 12.
     The breakdownor zener voltage depends upon the amount of doping.  If the diode is heavily doped, depletion layer will be thin and consequently the breakdown of the junction will occur at a lower reverse voltage  A lightly doped diode has a higher breakdown voltage  Zener diode is a crystal diode that is properly doped to have a sharp breakdown voltage 6/13/2024 12
  • 13.
     This typeof breakdown occurs at the reverse bias voltage above 8V and higher.  It occurs for lightly doped diode with large breakdown voltage. 6/13/2024 13
  • 14.
     As minoritycharge carriers (electrons) flow across the device. They tend to collide with the electrons in the covalent bond and cause the covalent bond to disrupt. As voltage increases, the kinetic energy (velocity) of the electrons also increases. The covalent bonds are more easily disrupted, causing an increase in electron hole pairs. The avalanche breakdown voltage increases with temperature. 6/13/2024 14
  • 15.
    • This providesa constant voltage from a source. • Zener diode of zener voltage VZ is reverse connected across the load RL. • The series resistance R absorbs the output voltage fluctuations to maintain constant voltage across the load. 6/13/2024 15
  • 16.
    • The zenerwill maintain a constant voltage VZ(=E0) across the load until input voltage does not fall below VZ. • The circuit should be designed in a manner such that even if the input voltage Ei and load resistance RL increases over a wide range, the load voltage E0 remains constant. 6/13/2024 16
  • 17.
    Case 1: • Inthe breakdown region zener diode is equivalent to a battery VZ if the input voltage is increased. 6/13/2024 17
  • 18.
     Excess voltageis dropped across the series resistance R which in turn increases the total value of current I.  The zener will conduct the increase of current in I when the load current remains constant. Hence the output voltage E0 remains constant. Case 2:  If the input voltage is constant the load resistance RL decreases which cause an increase in load current. 6/13/2024 18
  • 19.
    Case 2: • Voltagedrop in a resistor cannot produce an extra current from a source which will not change as the zener is within its regulating range. • Additional load current will come from a decrease in zener current IZ. • Voltagedrop across R=Ei-E0 • Current through R=IZ+IL 6/13/2024 19
  • 20.
     Varactor Diodeis a reverse biased p-n junction diode, whose capacitance can be varied electrically.  It is well known that the operation of the p-n junction depends on the bias applied which can be either forward or reverse in characteristic  Under Reverse bias condition, the p-n junction can be considered to be analogous to a capacitor where the p and n layers represent the two plates of the capacitor while the depletion region acts as a Dielectric separating them. 6/13/2024 20
  • 21.
     Varactor diodeas a capacitor 6/13/2024 21 Where, Cj is the total capacitance of the junction. ε is the permittivity of the semiconductor material. A is the cross-sectional area of the junction. d is the width of the depletion region
  • 22.
     The relationshipbetween the capacitance and the reverse bias voltage is given as 6/13/2024 22 Where, Cj is the capacitance of the varactor diode. C is the capacitance of the varactor diode when unbiased. K is the constant, often considered to be 1. Vb is the barrier potential. VR is the applied reverse voltage. m is the material dependent constant.
  • 23.
     This indicatesthat the maximum operating frequency of the circuit is dependent on the series resistance (Rs) and the diode capacitance, which can be mathematically given as 6/13/2024 23
  • 24.
     Width ofthe depletion region d is inversely proportional to C.  This means that the junction capacitance of the varactor diode decreases with an increase in the depletion region width caused to due to an increase in the reverse bias voltage (VR) 6/13/2024 24
  • 25.
     By controllingthe level of doping, the varactor diodes can be manufactured with a definite C-V curve. Depending on this, varactor diodes can be classified into two types viz., abrupt varactor diodes and hyper-abrupt varactor diodes. 6/13/2024 25