The document discusses tunnel field-effect transistors (TFETs) as a potential next-generation transistor technology. It presents a simulation comparing an InAs homojunction TFET to an NMOS transistor. The simulation shows the TFET has superior subthreshold swing and on/off ratio compared to the NMOS, though the NMOS has higher power. The TFET operates via band-to-band tunneling rather than thermal injection like in traditional transistors.

1. Tunnel Field-Effect Transistor
Next-generation Transistors
Presented by
Tsu-Wen Sung

2. OUTLINE
Introduction
ComparisonSimulation

3. INTRODUCTION

4. P+ N+
Intrinsic
Dielectric
Gate
Source
Bulk
Drain
Similar Structure

5. Switching Mechanism Differs
(From Wiki)

8. SIMULATION

9. Direct Bandgap III-V
Kane-Sze Model

10. a, b : Material-dependent parameter
f : Determines the onset of current
E : Maximum electric field across the tunnel
Vtw : tunneling potential across the tunnel window

11. Kane-Sze
Model
NDR
Ambipolor
Esaki
Diode
VGS
VDS

12. Choose
InAs Homojunction TFET
Gate
Intrinsic InAs Channel
P+ InAs
Source
N+ InAs
Drain
TCh
LG
TOX

13. High-Performance
NMOS
InAs Homojunction
TFET
W = 1 um ; L = 20nm W = 1 um ; L = 20nm
Si InAs
Unified Model Kane-Sze Model

14. High-Performance
NMOS
InAs Homojunction
TFET

15. COMPARISON

16. Combine

17. High-Performance
NMOS
InAs Homojunction
TFET
On/Off ratio: 105 ~ 1019
Power: 3*10-3 W
Subthreshold Swing: 60mV/dec
On/Off ratio: 103 ~ 104
Power: 3*10-4 W
Subthreshold Swing: 50mV/dec

18. Q&A