This chapter discusses the metal-oxide-semiconductor field-effect transistor (MOSFET). It covers the characteristics of the MOS capacitor, which forms the basis of the MOSFET. This includes the concept of surface inversion and derivation of the threshold voltage. The chapter also describes the ideal current-voltage relationship and small-signal equivalent circuit of the MOSFET. Frequency effects and the influence of fixed oxide and interface charges on capacitance-voltage characteristics are analyzed.
A simple N-channel MOSFET can be used as a diode, Switch and Active resistor. This presentation is a part of course of Analog CMOS Design, based on textbook of same title by Allen Holberg.
The following presentation is a part of the level 4 module -- Electrical and Electronic Principles. This resources is a part of the 2009/2010 Engineering (foundation degree, BEng and HN) courses from University of Wales Newport (course codes H101, H691, H620, HH37 and 001H). This resource is a part of the core modules for the full time 1st year undergraduate programme.
The BEng & Foundation Degrees and HNC/D in Engineering are designed to meet the needs of employers by placing the emphasis on the theoretical, practical and vocational aspects of engineering within the workplace and beyond. Engineering is becoming more high profile, and therefore more in demand as a skill set, in today’s high-tech world. This course has been designed to provide you with knowledge, skills and practical experience encountered in everyday engineering environments.
Nanometer layout handbook at high speed designMinho Park
I made this contents for whom is about to layout own's IC design. I think it would be helpful to consider layouts about high speed Rx / Tx.
Specially it was aimed giga hertz bandwidth I/O with its ESD protection (I am still working on that items to rearrange with my knowledge to my experiences)
I showed up all references and all images (except originals) are belong to own's copy rights.
Field Effect Transistor, JFET, Metal Oxide Semiconductor Field Effect Transistor, Depletion MOSFET, Enhancement MoSFET, Construction, Basic operation, Regions of Operation, Drain Characteristics, Transfer Characteristics, Biasing, Non-Ideal Characteristics of E-MOSFET, DC Analysis, AC equivalent circuit and Parameters, E-MOSFET as an Amplifier, AC analysis, MOSFET as a Switch, MOSFET as a diode, MOSFET as a resistor, High frequency equivalent circuit, Miller Capacitance, Frequency Response, NMOS and CMOS inverter
A simple N-channel MOSFET can be used as a diode, Switch and Active resistor. This presentation is a part of course of Analog CMOS Design, based on textbook of same title by Allen Holberg.
The following presentation is a part of the level 4 module -- Electrical and Electronic Principles. This resources is a part of the 2009/2010 Engineering (foundation degree, BEng and HN) courses from University of Wales Newport (course codes H101, H691, H620, HH37 and 001H). This resource is a part of the core modules for the full time 1st year undergraduate programme.
The BEng & Foundation Degrees and HNC/D in Engineering are designed to meet the needs of employers by placing the emphasis on the theoretical, practical and vocational aspects of engineering within the workplace and beyond. Engineering is becoming more high profile, and therefore more in demand as a skill set, in today’s high-tech world. This course has been designed to provide you with knowledge, skills and practical experience encountered in everyday engineering environments.
Nanometer layout handbook at high speed designMinho Park
I made this contents for whom is about to layout own's IC design. I think it would be helpful to consider layouts about high speed Rx / Tx.
Specially it was aimed giga hertz bandwidth I/O with its ESD protection (I am still working on that items to rearrange with my knowledge to my experiences)
I showed up all references and all images (except originals) are belong to own's copy rights.
Field Effect Transistor, JFET, Metal Oxide Semiconductor Field Effect Transistor, Depletion MOSFET, Enhancement MoSFET, Construction, Basic operation, Regions of Operation, Drain Characteristics, Transfer Characteristics, Biasing, Non-Ideal Characteristics of E-MOSFET, DC Analysis, AC equivalent circuit and Parameters, E-MOSFET as an Amplifier, AC analysis, MOSFET as a Switch, MOSFET as a diode, MOSFET as a resistor, High frequency equivalent circuit, Miller Capacitance, Frequency Response, NMOS and CMOS inverter
DESIGN OF DIFFERENT DIGITAL CIRCUITS USING SINGLE ELECTRON DEVICESmsejjournal
Single Electron transistor (SET) is foreseen as an excellently growing technology. The aim of this paper is
to present in short the fundamentals of SET as well as to realize its application in the design of single
electron device based novel digital logic circuits with the help of a Monte Carlo based simulator. A Single
Electron Transistors (SET) is characterized by two most substantial determinants. One is very low power
dissipation while the other is its small stature that makes it a favorable suitor for the future generation of
very high level integration. With the utilization of SET, technology is moving past CMOS age resulting in
power efficient, high integrity, handy and high speed devices. Conducting a check on the transport of single
electrons is one of the most stirring aspects of SET technologies. Apparently, Monte Carlo technique is in
vogue in terms of simulating SED based circuits. Hence, a MC based tool called SIMON 2.0 is exercised
upon for the design and simulation of these digital logic circuits. Further, an efficient functioning of the
logic circuits such as multiplexers, decoders, adders and converters are illustrated and established by
means of circuit simulation using SIMON 2.0 simulator.
DESIGN OF DIFFERENT DIGITAL CIRCUITS USING SINGLE ELECTRON DEVICESmsejjournal
Single Electron transistor (SET) is foreseen as an excellently growing technology. The aim of this paper is
to present in short the fundamentals of SET as well as to realize its application in the design of single
electron device based novel digital logic circuits with the help of a Monte Carlo based simulator. A Single
Electron Transistors (SET) is characterized by two most substantial determinants. One is very low power
dissipation while the other is its small stature that makes it a favorable suitor for the future generation of
very high level integration. With the utilization of SET, technology is moving past CMOS age resulting in
power efficient, high integrity, handy and high speed devices. Conducting a check on the transport of single
electrons is one of the most stirring aspects of SET technologies. Apparently, Monte Carlo technique is in
vogue in terms of simulating SED based circuits. Hence, a MC based tool called SIMON 2.0 is exercised
upon for the design and simulation of these digital logic circuits. Further, an efficient functioning of the
logic circuits such as multiplexers, decoders, adders and converters are illustrated and established by
means of circuit simulation using SIMON 2.0 simulator.
High Performance Germanium Double Gate N-MOSFETIJMER
The current MOSFET technology supports scaling down to nanometer. To achieve
enhanced transistor switching, it is difficult to keep the equivalent driver current at the same level
since it changes by the certain restrictions like effective masses, density of states, uniaxial- and
biaxial- strain; band structure, channel orientation, channel mobility, off-state leakage, switching
delay in nano-scale and parasitic latch up. Current strained-Si is the ruling technology for
intensifying the performance of MOSFET and development of strain can provide a better solution to
the scaling. The future of nano-scale MOSFETs relies on exploration of novel higher mobility channel
materials such as stained-Ge and strained III-V groups that might perform even better than very
highly strained-Si. In addition, parameters such as injection velocity, short channel length effect and
Band-to-Band Tunneling (BTBT) result in reduction of inversion charge, increase in leakage current,
resulting in decrease in the drive current. While developing accurate model of MOSFETs all these
complex effects should be captured. It is proposed to
1. Design high performance double gate n-MOSFET with channel material Ge.
2. Benchmarked & stimulate high performance double gate n-MOSFET by using the simulation
techniques.
Study of RF-MEMS Capacitive Shunt Switch for Microwave Backhaul Applications IOSRJECE
In this research paper, we have proposed a new type of capacitive shunt RF-MEMS switch. MicroElectro-Mechanical System (MEMS) is a combination of mechanical and electromagnetics properties at micro level unit. This MEMS switch can be used for switching purpose at RF and microwave frequencies, called RFMEMS switch. The RF-MEMS switch has a potential characteristics and superior performances at radio frequency. The MEMS switch has excellent advantages such as zero power consumption, high power handling capacity, high performance, and low inter-modulation distortion. In this proposed design, a new type of capacitive shunt switch is designed and analyzed for RF applications. The switch is designed both in UP and DOWN-states. The proposed switch design consists of substrate, co-planar waveguide (CPW), dielectric material and suspended metallic bridge. The proposed MEMS switch has dimension of 508 µm × 620 µm with a height of 500 µm and implemented on GaAs as a substrate material with relative permittivity of 12.9. The geometry and results of the proposed switch is designed using Ansoft HFSS electromagnetic simulator based on finite element method (FEM). The electrostatic and electromagnetic result showed better performances such as return loss, insertion loss and isolation. The switch has also excellent isolation property of -48 dB at 26 GHz.
Analytical modeling of electric field distribution in dual material junctionl...VLSICS Design
In this paper, electric field distribution of the junctionless dual material surrounding gate MOSFETs
(JLDMSG) is developed. Junctionless is a device that has similar characteristics like junction based
devices, but junctionless has a positive flatband voltage with zero electric field. In Surrounding gate
MOSFETs gate material surrounds the channel in all direction , therefore it can overcome the short
channel effects effectively than other devices. In this paper, surface potential and electric field distribution
is modelled. The proposed surface potential model is compared with the existing central potential model. It
is observed that the short channel effects (SCE) is reduced and the performance is better than the existing
method.
Courier management system project report.pdfKamal Acharya
It is now-a-days very important for the people to send or receive articles like imported furniture, electronic items, gifts, business goods and the like. People depend vastly on different transport systems which mostly use the manual way of receiving and delivering the articles. There is no way to track the articles till they are received and there is no way to let the customer know what happened in transit, once he booked some articles. In such a situation, we need a system which completely computerizes the cargo activities including time to time tracking of the articles sent. This need is fulfilled by Courier Management System software which is online software for the cargo management people that enables them to receive the goods from a source and send them to a required destination and track their status from time to time.
CFD Simulation of By-pass Flow in a HRSG module by R&R Consult.pptxR&R Consult
CFD analysis is incredibly effective at solving mysteries and improving the performance of complex systems!
Here's a great example: At a large natural gas-fired power plant, where they use waste heat to generate steam and energy, they were puzzled that their boiler wasn't producing as much steam as expected.
R&R and Tetra Engineering Group Inc. were asked to solve the issue with reduced steam production.
An inspection had shown that a significant amount of hot flue gas was bypassing the boiler tubes, where the heat was supposed to be transferred.
R&R Consult conducted a CFD analysis, which revealed that 6.3% of the flue gas was bypassing the boiler tubes without transferring heat. The analysis also showed that the flue gas was instead being directed along the sides of the boiler and between the modules that were supposed to capture the heat. This was the cause of the reduced performance.
Based on our results, Tetra Engineering installed covering plates to reduce the bypass flow. This improved the boiler's performance and increased electricity production.
It is always satisfying when we can help solve complex challenges like this. Do your systems also need a check-up or optimization? Give us a call!
Work done in cooperation with James Malloy and David Moelling from Tetra Engineering.
More examples of our work https://www.r-r-consult.dk/en/cases-en/
Welcome to WIPAC Monthly the magazine brought to you by the LinkedIn Group Water Industry Process Automation & Control.
In this month's edition, along with this month's industry news to celebrate the 13 years since the group was created we have articles including
A case study of the used of Advanced Process Control at the Wastewater Treatment works at Lleida in Spain
A look back on an article on smart wastewater networks in order to see how the industry has measured up in the interim around the adoption of Digital Transformation in the Water Industry.
Overview of the fundamental roles in Hydropower generation and the components involved in wider Electrical Engineering.
This paper presents the design and construction of hydroelectric dams from the hydrologist’s survey of the valley before construction, all aspects and involved disciplines, fluid dynamics, structural engineering, generation and mains frequency regulation to the very transmission of power through the network in the United Kingdom.
Author: Robbie Edward Sayers
Collaborators and co editors: Charlie Sims and Connor Healey.
(C) 2024 Robbie E. Sayers
Quality defects in TMT Bars, Possible causes and Potential Solutions.PrashantGoswami42
Maintaining high-quality standards in the production of TMT bars is crucial for ensuring structural integrity in construction. Addressing common defects through careful monitoring, standardized processes, and advanced technology can significantly improve the quality of TMT bars. Continuous training and adherence to quality control measures will also play a pivotal role in minimizing these defects.
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Student information management system project report ii.pdfKamal Acharya
Our project explains about the student management. This project mainly explains the various actions related to student details. This project shows some ease in adding, editing and deleting the student details. It also provides a less time consuming process for viewing, adding, editing and deleting the marks of the students.
Event Management System Vb Net Project Report.pdfKamal Acharya
In present era, the scopes of information technology growing with a very fast .We do not see any are untouched from this industry. The scope of information technology has become wider includes: Business and industry. Household Business, Communication, Education, Entertainment, Science, Medicine, Engineering, Distance Learning, Weather Forecasting. Carrier Searching and so on.
My project named “Event Management System” is software that store and maintained all events coordinated in college. It also helpful to print related reports. My project will help to record the events coordinated by faculties with their Name, Event subject, date & details in an efficient & effective ways.
In my system we have to make a system by which a user can record all events coordinated by a particular faculty. In our proposed system some more featured are added which differs it from the existing system such as security.