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Submitted by –
ADITYA GHOSH
ARGHAYA GOSWAMI
DEBOJYOTI MUKHERJEE
PRITAM SARDAR
PROHLAD MONDAL
Department of Electronics & Communication
Engineering(6th semester)
Swami Vivekananda Institute of Science &
SEMICONDUCTORLASERPRINCIPLE
Content
 Introduction
 Difference between LED and Laser
 Types of Semiconductors
 Requirement of Laser
 Generation of Laser
 Classification of Semiconductor Laser
 Characteristics
 Non Semiconductor Laser
 Main application
 Advantage of Semiconductor
 Disadvantage of Semiconductor
 Conclusion
Introduction
In laser, light amplification is achieved via
stimulated emission.
Stimulated emission had been proposed by Albert
Einstein in 1915
Fig1:Laser
Difference between LED and Laser
Fig 2: Wavelength of LED and Laser
LED Laser
Principle Spontaneous Emission (Random)
Photon Emission
Stimulated Emission
Coherence Incoherent Coherent
SpectralWidth/LineWidth 50nm Less than 5nm
Directionality Not directional Highly directional
Output Power Low High
Types of Semiconductors
Fig 2:Wavelength of LED and Laser
Fig 3:Types of Semiconductor
Intrinsic & Extrinsic Semiconductors
 Intrinsic semiconductor : A perfect
material with no impurities.
 Extrinsic semiconductor : donor or
acceptor type semiconductors.
 Majority carriers: electrons in n-type or
holes in p-type.
 Minority carriers: holes in n-type or
electrons in p-type.
 The operation of semiconductor devices is
essentially based on the injection and
extraction of minority carriers.
2
inpn 
n-Type Semiconductor
Fig4: Donor level in an n-type semiconductor.
p-Type Semiconductor
Fig5: Acceptor level in an p-type semiconductor.
Requirement of Laser
 Conditions required:
1. Population inversion- the number of electrons in CB is greater
than the number of electrons in VB
2. Emission
3. Optical resonator or Fabry-Perot resonator
Spontaneous
emission
Stimulated emission
Population Inversion
Fig 6: thermal equilibrium condition for
degenerate semiconductor (without
biasing)
Fig 7: Population inversion occurs with
biasing
Emission
Spontaneous Emission Stimulated emission
Fig 8: spontaneous emission Fig 9: stimulated emission
Optical Resonator
 Mostly used the structure of Fabry-Perot resonator
 Used:
i) to increase the density of photon in active region
ii) to amplify the medium radiation
Fig 10:optical resonator cavity
Fig 11:power with phase shift
Generation of Laser
Fig 12: Generation diagram of Laser
Classification Of Semiconductor
Laser
Semiconductor Laser
Homojunction
Semiconductor Laser
Heterojunction
Semiconductor Laser
Double
Heterojunction
Semiconductor Laser
Single
Heterojunction
Semiconductor Laser
Homojunction Semiconductor Laser
Homojunction diode lasers are those in which P end and N end of the diode are made of
the same semiconductor material.
Example : Ga As laser
 They use Direct Band Gap
Semi- conductor material.
 P-N Junction act as the active
medium.
 The crystal is cut at a thickness of
0.5 mm
 Applied voltage is given through
metal contacts on both surfaces of
the diode.
 Pulse beam of laser of 8400 Å is
produced
Fig13: Diagram of Homojunction
Semiconductor Laser
Energy Level Diagram : Homojunction
Fig14: Energy level Diagram of Homojunction
Semiconductor Laser
Heterojunction Semiconductor Laser
Heterojunction Semiconductor lasers are those in which P end is made of one type
of semiconductor material and the N end is made of another type of semiconductor
material
Example : GaAlAs diode laser
 Use Direct Band gap
Semiconductor
 Consist of five layers namely
 GaAs – p type
 GaAlAs – p type
 GaAs – p type (Active Medium)
 GaAIAs – n type
 GaAs – n type
Fig15: Diagram of Heterojunction
Semiconductor Laser
Energy Level Diagram : Heterojunction
Fig 16: Energy level Diagram of
Heterojunction Semiconductor Laser
Characteristics
1) Type: It is a solid state semiconductor laser.
2) Active medium: A PN junction diode made from
single crystal of gallium arsenide is used as an
active medium.
3) Pumping method: The direct conversion
method is used for pumping action
4) Power output: The power output from this laser
is 1mW.
5) Nature of output: The nature of output is
continuous wave or pulsed output.
Non semiconductor Laser
Ruby LASER:
Fig 17:Pumping levels for Ruby Laser
He-Ne Laser
Fig 18: Diagram of He-Ne Laser
Main applications
 Optical fiber communications
 Optical storage
No diode laser
= No internet!
Diode lasers are also widely used in printers,
scanners, sensors, pumping of solid-state
lasers, etc.
The diode laser in a computer mouse costs
about 10 US cents .
Laser Range Finder
The laser range finder works on the principle of a radar
& use to knock down an enemy tank.
23
Fig 19: working diagram of Laser Range Finder
Underwater Laser
 Lasers can also be used as a source of underwater
transmission. At present, the submarines have to
rely on a sonar to find the enemy crafts and to
avoid the underwater objects.
24
Fig 19: working diagram of Underwater Laser
Advantages of semiconductor laser
Smaller size
Semiconductor laser are economical in
cost.
Its construction is simple.
It has high efficiency.
low power consumption.
Disadvantages of semiconductor laser
 Due to relatively low power production, these
lasers not suited to typical laser applications
 The temperature affects greatly the output of
the laser
 Beam divergence is much greater as compared
to all other lasers
 Cooling system required in some cases
Conclusion
Semiconductor laser have been around for
about forty years now, but their possible uses
continue to grow each day. We are at the new
dawn of the millennium, and Semiconductor
Laser will help bring about a new revolution
in many fields of science; the new optical
solution revolution!
Semiconductor laser

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一比一原版(SFU毕业证)西蒙菲莎大学毕业证成绩单如何办理
 

Semiconductor laser

  • 1. Submitted by – ADITYA GHOSH ARGHAYA GOSWAMI DEBOJYOTI MUKHERJEE PRITAM SARDAR PROHLAD MONDAL Department of Electronics & Communication Engineering(6th semester) Swami Vivekananda Institute of Science & SEMICONDUCTORLASERPRINCIPLE
  • 2. Content  Introduction  Difference between LED and Laser  Types of Semiconductors  Requirement of Laser  Generation of Laser  Classification of Semiconductor Laser  Characteristics  Non Semiconductor Laser  Main application  Advantage of Semiconductor  Disadvantage of Semiconductor  Conclusion
  • 3. Introduction In laser, light amplification is achieved via stimulated emission. Stimulated emission had been proposed by Albert Einstein in 1915 Fig1:Laser
  • 4. Difference between LED and Laser Fig 2: Wavelength of LED and Laser LED Laser Principle Spontaneous Emission (Random) Photon Emission Stimulated Emission Coherence Incoherent Coherent SpectralWidth/LineWidth 50nm Less than 5nm Directionality Not directional Highly directional Output Power Low High
  • 5. Types of Semiconductors Fig 2:Wavelength of LED and Laser Fig 3:Types of Semiconductor
  • 6. Intrinsic & Extrinsic Semiconductors  Intrinsic semiconductor : A perfect material with no impurities.  Extrinsic semiconductor : donor or acceptor type semiconductors.  Majority carriers: electrons in n-type or holes in p-type.  Minority carriers: holes in n-type or electrons in p-type.  The operation of semiconductor devices is essentially based on the injection and extraction of minority carriers. 2 inpn 
  • 7. n-Type Semiconductor Fig4: Donor level in an n-type semiconductor.
  • 8. p-Type Semiconductor Fig5: Acceptor level in an p-type semiconductor.
  • 9. Requirement of Laser  Conditions required: 1. Population inversion- the number of electrons in CB is greater than the number of electrons in VB 2. Emission 3. Optical resonator or Fabry-Perot resonator Spontaneous emission Stimulated emission
  • 10. Population Inversion Fig 6: thermal equilibrium condition for degenerate semiconductor (without biasing) Fig 7: Population inversion occurs with biasing
  • 11. Emission Spontaneous Emission Stimulated emission Fig 8: spontaneous emission Fig 9: stimulated emission
  • 12. Optical Resonator  Mostly used the structure of Fabry-Perot resonator  Used: i) to increase the density of photon in active region ii) to amplify the medium radiation Fig 10:optical resonator cavity Fig 11:power with phase shift
  • 13. Generation of Laser Fig 12: Generation diagram of Laser
  • 14. Classification Of Semiconductor Laser Semiconductor Laser Homojunction Semiconductor Laser Heterojunction Semiconductor Laser Double Heterojunction Semiconductor Laser Single Heterojunction Semiconductor Laser
  • 15. Homojunction Semiconductor Laser Homojunction diode lasers are those in which P end and N end of the diode are made of the same semiconductor material. Example : Ga As laser  They use Direct Band Gap Semi- conductor material.  P-N Junction act as the active medium.  The crystal is cut at a thickness of 0.5 mm  Applied voltage is given through metal contacts on both surfaces of the diode.  Pulse beam of laser of 8400 Å is produced Fig13: Diagram of Homojunction Semiconductor Laser
  • 16. Energy Level Diagram : Homojunction Fig14: Energy level Diagram of Homojunction Semiconductor Laser
  • 17. Heterojunction Semiconductor Laser Heterojunction Semiconductor lasers are those in which P end is made of one type of semiconductor material and the N end is made of another type of semiconductor material Example : GaAlAs diode laser  Use Direct Band gap Semiconductor  Consist of five layers namely  GaAs – p type  GaAlAs – p type  GaAs – p type (Active Medium)  GaAIAs – n type  GaAs – n type Fig15: Diagram of Heterojunction Semiconductor Laser
  • 18. Energy Level Diagram : Heterojunction Fig 16: Energy level Diagram of Heterojunction Semiconductor Laser
  • 19. Characteristics 1) Type: It is a solid state semiconductor laser. 2) Active medium: A PN junction diode made from single crystal of gallium arsenide is used as an active medium. 3) Pumping method: The direct conversion method is used for pumping action 4) Power output: The power output from this laser is 1mW. 5) Nature of output: The nature of output is continuous wave or pulsed output.
  • 20. Non semiconductor Laser Ruby LASER: Fig 17:Pumping levels for Ruby Laser
  • 21. He-Ne Laser Fig 18: Diagram of He-Ne Laser
  • 22. Main applications  Optical fiber communications  Optical storage No diode laser = No internet! Diode lasers are also widely used in printers, scanners, sensors, pumping of solid-state lasers, etc. The diode laser in a computer mouse costs about 10 US cents .
  • 23. Laser Range Finder The laser range finder works on the principle of a radar & use to knock down an enemy tank. 23 Fig 19: working diagram of Laser Range Finder
  • 24. Underwater Laser  Lasers can also be used as a source of underwater transmission. At present, the submarines have to rely on a sonar to find the enemy crafts and to avoid the underwater objects. 24 Fig 19: working diagram of Underwater Laser
  • 25. Advantages of semiconductor laser Smaller size Semiconductor laser are economical in cost. Its construction is simple. It has high efficiency. low power consumption.
  • 26. Disadvantages of semiconductor laser  Due to relatively low power production, these lasers not suited to typical laser applications  The temperature affects greatly the output of the laser  Beam divergence is much greater as compared to all other lasers  Cooling system required in some cases
  • 27. Conclusion Semiconductor laser have been around for about forty years now, but their possible uses continue to grow each day. We are at the new dawn of the millennium, and Semiconductor Laser will help bring about a new revolution in many fields of science; the new optical solution revolution!