This document provides a device modeling report for a TOSHIBA SSM6K203FE N-Channel Power MOSFET. It includes: 1) Model parameters and specifications for the MOSFET, including its body diode and ESD protection diode. 2) Simulation results and comparison tables for key electrical characteristics like transconductance, Vgs-Id, Rds(on), gate charge, switching time, and output characteristics. 3) Reference curves and simulation waveforms to evaluate the forward and reverse performance of the internal body and protection diodes.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Model parameters)
PART NUMBER: SSM6K203FE
MANUFACTURER: TOSHIBA
REMARK: N Channel Model
Body Diode (Model parameters) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

2. Circuit Configuration
6 5 4
1 2 3
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3. MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
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4. Transconductance Characteristic
Circuit Simulation Result
16
Measurement
14 Simulation
12
TRANSCONDUCTANCE Gfs(s)
10
8
6
4
2
0
0 1 2 3 4 5
DRIAN CURRENT ID (A)
Comparison table
gfs
Id(A) Error(%)
Measurement Simulation
0.1 1.9608 1.9506 -0.5171
0.2 2.8169 2.7556 -2.1746
0.5 4.3478 4.2557 -2.1199
1 6.0241 6.1206 1.6014
2 8.2988 8.4066 1.2993
5 12.4688 12.3995 -0.5560
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

5. Vgs-Id Characteristic
Circuit Simulation result
10A
1.0A
100mA
10mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V 1.8V 2.0V
I(V2)
V_VGS
Evaluation circuit
V2
U1
SSM6K203FE
VDS
VGS 4.0Vdc
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

6. Comparison Graph
Circuit Simulation Result
10
Measurement
Simulation
Drain Current ID (A)
1
0.1
0.01
0 1 2
Gate - Source Voltage VGS (V)
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
0.01 0.780 0.778 -0.231
0.1 0.870 0.848 -2.540
0.2 0.915 0.891 -2.656
0.5 1.000 0.977 -2.350
1 1.080 1.075 -0.463
2 1.200 1.217 1.442
5 1.520 1.511 -0.625
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

7. Rds(on) Characteristic
Circuit Simulation result
2.0A
1.8A
1.6A
1.4A
1.2A
1.0A
0.8A
0.6A
0.4A
0.2A
0A
0V 10mV 20mV 30mV 40mV 50mV 60mV 70mV 80mV 90mV
I(V2)
V_VDS
Evaluation circuit
V2
U1
SSM6K203FE
VDS
VGS 4.0Vdc
4.0Vdc
0
Simulation Result
ID=2.0A, VGS=4.0V Measurement Simulation Error (%)
R DS (on) () 0.049 0.049 0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

8. Gate Charge Characteristic
Circuit Simulation result
10V
9V
8V
7V
6V
5V
4V
3V
2V
1V
0V
0 2.5n 5.0n 7.5n 10.0n 12.5n 15.0n
V(W1:3)
Time*1mA
Evaluation circuit
Vsense
I1
D1
W1 Dbreak 2.8Adc
+
TD = 0
- U1 SSM6K203FE
I2 ION = 0A W
IOFF = 1mA VD
10Vdc
0
Simulation Result
VDD=10V,ID=2.8A,
Measurement Simulation Error (%)
VGS=4.0V
Qgs(nc) 1.100 1.092 -0.727
Qgd(nc) 1.850 1.862 0.649
Qg(nc) 6.000 5.70 -5.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

9. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
0.1 65.000 64.850 -0.231
0.2 60.000 58.900 -1.833
0.5 50.000 49.999 -0.002
1 40.000 39.999 -0.003
2 28.000 27.954 -0.164
5 16.000 15.809 -1.194
10 10.000 9.886 -1.138
20 6.500 6.712 3.265
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

10. Switching Time Characteristic
Circuit Simulation result
14V
12V
10V
8V
6V
4V
2V
0V
-2V
0.92us 0.96us 1.00us 1.04us 1.08us 1.12us
V(3)/1 V(L3:1)*4
Time
Evaluation circuit
RL
3
50nH 5
R1 L3
V1 = 0
30nH
V2 = 5 4.7
TD = 1u V1 R2
TR = 10n 4.7 U1 SSM6K203FE VDD
TF = 10n 10Vdc
PW = 10u
PER = 10m
0
Simulation Result
ID=2.0A, VDD=10V
Measurement Simulation Error(%)
VGS=0/2.5V
Ton(ns) 14.000 13.697 -2.164
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

11. Output Characteristic
Circuit Simulation result
6.0A
4.0V 2.5V
1.8V
5.0A
1.5V
4.0A
3.0A
2.0A
VGS=1.2V
1.0A
0A
0V 0.1V 0.2V 0.3V 0.4V 0.5V 0.6V 0.7V 0.8V 0.9V 1.0V
I(V2)
V_VDS
Evaluation circuit
V2
U1
SSM6K203FE
VDS
VGS 4.0Vdc
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

12. BODY DIODE
Forward Current Characteristic
Circuit Simulation Result
10A
1.0A
100mA
10mA
1.0mA
100uA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
U1
V1 SSM6K203FE
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

13. Comparison Graph
Circuit Simulation Result
10
Measurement
Simulation
Reverse Drain Current- IDR (A)
1
0.1
0.01
0.001
0.0001
0 0.2 0.4 0.6 0.8 1 1.2
Drain - Source Voltage VDS (V)
Simulation Result
VDS(V) VDS(V)
IDR(A) %Error
Measurement Simulation
0.0001 0.460 0.462 0.348
0.001 0.540 0.536 -0.759
0.01 0.610 0.611 0.131
0.1 0.685 0.688 0.496
0.2 0.710 0.711 0.183
0.5 0.750 0.747 -0.440
1 0.780 0.779 -0.192
2 0.815 0.817 0.221
5 0.880 0.879 -0.125
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

14. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
200mA
0A
-200mA
-400mA
5.20us 5.24us 5.28us 5.32us 5.36us 5.40us
I(R1)
Time
Evaluation Circuit
R1 50
V1 = -11V V1 U2
V2 = 10.8V SSM6K203FE
TD = 10n
TR = 10ns
TF = 5ns
PW = 1us
PER = 100us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj (ns) 7.600 7.655 0.724
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15. Reverse Recovery Characteristic Reference
Trj=7.6(ns)
Trb=9.4(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
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16. ESD PROTECTION DIODE
Zener Voltage Characteristic
Circuit Simulation Result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V 10V 20V 30V 40V 50V 60V
I(R1)
V_V1
Evaluation Circuit
R1
openopen
0.01m open
V1 U1
0Vdc SSM6K203FE Ropen
100MEG
openopen 0
0
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17. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007