SPICE MODEL of TPC8214-H (Professional+BDSP Model) in SPICE PARK
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SPICE MODEL of TPC8214-H (Professional+BDSP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of TPC8214-H (Professional+BDSP Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Professional) PART NUMBER: TPC8214-H MANUFACTURER: TOSHIBA Body Diode (Special Model) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 2. Circuit Configuration 8 7 6 5 TPC8214-H 1 2 3 4 Equivalent Circuit D S1 - - + + R2 S R1 10MEG DGD 10M CGD S2 + + - - Q1 S G S All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 3. MOSFET MODEL PSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 4. Transconductance Characteristic Circuit Simulation Result 10.00 Measurement Simulation GFS (s) 1.00 0.10 1.00 10.00 DRAIN CURRENT ID (A) Comparison table gfs Id(A) Error(%) Measurement Simulation 0.100 1.067 1.078 1.031 0.200 1.570 1.520 -3.185 0.500 2.430 2.428 -0.091 1.000 3.507 3.422 -2.438 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 5. Vgs-Id Characteristic Circuit Simulation result 2.0A 1.5A 1.0A 0.5A 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V I(VD_sense) V_VG Evaluation circuit 0Vdc VD_sense U25 TPC8214-H VD VG 10Vdc 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 6. Comparison Graph Circuit Simulation Result 2.00 Measurement Simulation Drain Current - Id (mA) 1.50 1.00 0.50 0.00 0 2 4 6 8 Gate-Source Voltage - Vgs (V) Simulation Result VGS(V) ID(A) Error (%) Measurement Simulation 0.050 2.305 2.332 1.180 0.100 2.380 2.387 0.286 0.200 2.470 2.466 -0.178 0.500 2.615 2.619 0.149 1.000 2.740 2.794 1.971 2.000 2.915 3.040 4.288 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 7. Rds(on) Characteristic Circuit Simulation result 1.1A 1.0A 0.9A 0.8A 0.7A 0.6A 0.5A 0.4A 0.3A 0.2A 0.1A 0A 0V 100mV 200mV 300mV 400mV 500mV I(VD_sense) V_VD Evaluation circuit 0Vdc VD_sense TPC8214-H VD VG 10Vdc 10Vdc 0 Simulation Result ID=1.1A, VGS=10V Measurement Simulation Error (%) R DS (on) 130.000 m 130.000 m 0.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 8. Gate Charge Characteristic Circuit Simulation result 10V 8V 6V 4V 2V 0V 0 4n 8n 12n 16n V(W1:3) Time*1mS Evaluation circuit V2 0Vdc TPC8214-H Dbreak D1 PER = 1000u PW = 600u W1 I2 TF = 10n + 2.2Adc TR = 10n TD = 0 - I2 = 1m W I1 = 0 I1 IOFF = 1mA V1 ION = 0uA 48Vdc 0 Simulation Result VDD=80V, ID=2.2A Measurement Simulation Error (%) ,VGS=10V Qgs 1.600 nC 1.6084 nC 0.52 Qgd 1.300 nC 1.2973 nC -0.21 Qg 7.500 nC 7.5079 nC 0.11 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 9. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(nF) VDS(V) Error(%) Measurement Simulation 0.100 69.691 69.000 -0.992 0.200 57.723 57.000 -1.253 0.500 43.463 44.000 1.236 1.000 31.575 31.000 -1.821 2.000 21.112 21.000 -0.531 5.000 10.903 11.000 0.888 10.000 5.134 5.300 3.233 20.000 4.235 4.100 -3.192 50.000 1.962 2.000 1.937 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 10. Switching Time Characteristic Circuit Simulation result 20V 16V 12V 8V 4V 0V 0.96us 0.98us 1.00us 1.02us 1.04us 1.06us 1.08us V(U24:4) V(L2:1)/5 Time Evaluation circuit L2 RL 30nH 45 V TPC8214-H R1 L1 V1 V 50Vdc V1 = 0 30nH V2 = 20 V2 4.7 TD = 1u R2 TR = 10n TF = 10n 4.7 PW = 10u PER = 200u 0 Simulation Result ID=1.1A, VDD=50V Measurement Simulation Error(%) VGS=0/10V ton 14.000 ns 14.023 ns -0.071 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 11. Output Characteristic Circuit Simulation result 1.0A 0.9A 0.8A 0.7A 0.6A 2.6V 0.5A 0.4A 2.5V 0.3A 0.2A 2.4V 0.1A VGS=2.3V 0A 0V 2V 4V 6V 8V 10V 12V 14V 16V 18V 20V I(Vdsense) V_V2 Evaluation circuit 0Vdc VD_sense U24 TPC8214-H VD VG 10Vdc 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 12. Output Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 13. Forward Current Characteristic Circuit Simulation Result 10A 1.0A 100mA 10mA 1.0mA 0V 0.5V 1.0V 1.5V I(R1) V1(V1) Evaluation Circuit R1 0.01m OpenOpen Open U26 V1 TPC8214-H Ropen 0Vdc 100MEG OpenOpen 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 14. Comparison Graph Circuit Simulation Result 10.000 Measurement Simulation Drain Reverse Current IDR (A) 1.000 0.100 0.010 0.001 0.00 0.50 1.00 1.50 Source-Drain Voltage VDS (V) Simulation Result VSD(V) IDR(A) %Error Measurement Simulation 0.010 0.550 0.548 -0.364 0.020 0.575 0.571 -0.696 0.050 0.605 0.602 -0.496 0.100 0.620 0.625 0.806 0.200 0.650 0.651 0.215 0.500 0.695 0.691 -0.590 1.000 0.725 0.728 0.414 2.000 0.785 0.784 -0.127 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 15. Reverse Recovery Characteristics (Body Diode) Circuit Simulation Result 2.0A 1.5A 1.0A 0.5A 0A -0.5A -1.0A -1.5A -2.0A 2.28us 2.32us 2.36us 2.40us 2.44us I(R1) Time Evaluation Circuit R1 2 Vsense PARAMETERS: V1 = -19V TF = 1.62u V2 = 80V TD = 6.873n DTPC8213-H_SP U25 TR = 10ns TF = {TF} V1 VPULSE PW = 1us PER = 20us 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) trr 36.000 ns 36.092 ns 0.260 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 16. Reverse Recovery Characteristic (Body Diode) Reference Trr=36ns Conditions:Ifwd=di/dt=30A/us All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 17. ZenerVoltage Characteristic Circuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V I(R1) V_V1 Evaluation Circuit R1 Open 0.01m OpenOpen Open U10 V1 0Vdc TPC8214-H Ropen 100MEG OpenOpen 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 18. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2006