SPICE MODEL of TPC8A02-H (Professional+ZDSP Model) in SPICE PARK

Device Modeling Report

COMPONENTS: Power MOSFET (Professional)
PART NUMBER: TPC8A02-H
MANUFACTURER: TOSHIBA
Zener Diode (Special) / ESD Protection Diode

Bee Technologies Inc.

All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

MOSFET MODEL

PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility


Transconductance Characteristic

Circuit Simulation Result

50

45

40

35

30
gfs

25

20

15

10

5 Measurement
Simulation
0
0 1 2 3 4 5 6 7 8 9 10
ID - Drain Current - A
Comparison table

gfs
Id(A) Error(%)
Measurement Simulation
0.1 3.300 3.333 1.000
0.2 6.600 6.667 1.015
0.5 10.500 10.500 0.000
1 14.200 14.286 0.606
2 20.000 20.000 0.000
5 31.000 31.250 0.806
10 43.000 43.478 1.112


Vgs-Id Characteristic

Circuit Simulation result

50A

40A

30A

20A

10A

0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V
I(V3)
V_V2
Evaluation circuit

U26

V3

0Vdc

TPC8A02-H V1
V2
0Vdc 10Vdc

0


Comparison Graph


Measurement
9.1 Simulation

8.1

7.1
ID - Drain Current - A

6.1

5.1

4.1

3.1

2.1

1.1

0.1
0 1 2 3 4 5 6
VGS - Gate to Source Voltage - V
Simulation Result

VGS(V)
ID(A) Error (%)
0.1 2.700 2.704 0.148
0.2 2.720 2.723 0.110
0.5 2.750 2.761 0.400
1 2.800 2.803 0.107
2 2.850 2.863 0.456
5 2.950 2.982 1.085
10 3.110 3.118 0.257


Rds(on) Characteristic

10A

9A

8A

7A

6A

5A

4A

3A

2A

1A

0A
0V 10mV 20mV 30mV 40mV 50mV 60mV 70mV 80mV 90mV
I(V3)
V_VDS
Evaluation circuit

U26

V3

0Vdc
VGS
TPC8A02-H VDS

10Vdc 0Vdc

0

Simulation Result

ID=8A, VGS=10V Measurement Simulation Error (%)
R DS (on) 4.3  4.302  0.047


Gate Charge Characteristic
16V

12V

8V

4V

0V
0 10n 20n 30n 40n
V(W1:3)
Time*1mS
Evaluation circuit

U26 V2

0Vdc
Dbreak

D1
PER = 1000u
PW = 600u W1 I2
TF = 10n + TPC8A02-H 16Adc
TR = 10n
TD = 0
-
I2 = 1m W
I1 IOFF = 100uA V1
I1 = 0 ION = 0uA 24Vdc

0

Simulation Result

VDD=24V,ID=16A
Measurement Simulation Error (%)
,VGS=10V
Qgs(nC) 6.000 6.017 0.283
Qgd(nC) 9.000 8.983 -0.189
Qg 34.000 34.068 0.200


Capacitance Characteristic

Measurement
Simulation

Simulation Result

Cbd(nF)
VDS(V) Error(%)
0.1 2.200 2.210 0.455
0.2 2.130 2.100 -1.408
0.5 1.900 1.900 0.000
1 1.630 1.640 0.613
2 1.350 1.350 0.000
5 0.980 0.970 -1.020
10 0.690 0.700 1.449
20 0.510 0.515 0.980


Switching Time Characteristic

12V

10V

8V

6V

4V

2V

0V

1.0000us 1.0500us 1.1000us 1.1500us
V(L1:2) V(L2:1)/1.5
Time

Evaluation circuit

U26 L2 RL

50nH 1.86

R1 L1

V1 = 0
30nH
V2 = 20 V2 4.7 V1
TD = 1u R2 TPC8A02-H 15Vdc
TR = 10n
TF = 10n 4.7
PW = 10u
PER = 200u

0

Simulation Result

ID=8 A, VDD=15V
Measurement Simulation Error(%)
VGS=0/10V
Ton(ns) 14.000 14.072 0.514


Output Characteristic


50A
3.8
10 4
6
3.7
40A

3.6

30A
3.5

3.4
20A

VGS= 3.2
10A

0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(Vdsense)
V_Vvariable

Evaluation circuit

U26

Vdsense

10Vdc 0Vdc
TPC8A02-H
Vv ariable

Vstep
10Vdc

0


Reverse Characteristic


100uA

10uA

1.0uA
0V 10V 20V 30V 40V 50V 60V 70V 80V 90V
I(V1)
V_V2
Evaluation circuit

V1

0Vdc

U7

V2 0Vdc

D8A02

0


Comparison Graph


100.0
Measurement
Simulation
IR(uA)

10.0

1.0
0 5 10 15 20 25 30 35 40 45 50 55 60

VR(V)

Simulation Result

VR(V)
IR(uA) Error (%)
5.000 30.350 30.347 -0.010
10.000 35.500 35.626 0.355
20.000 37.300 37.376 0.204
50.000 37.300 37.381 0.217
100.000 37.300 37.392 0.247


Forward Current Characteristic

100A

10A

1.0A

100mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V 1.8V
I(V1)
V_V2
Evaluation Circuit

V1

0Vdc

D8A02
V2 0Vdc

U7

0


Comparison Graph

5.000
Measurement
Simulation

4.000

3.000
IDR(A)

2.000

1.000

0.000
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1

VDS(V)
Simulation Result

VSD(V)
IDR(A) Measuremen Simulation %Error
0.1 0.260 0.272 4.615
0.2 0.295 0.304 3.051
0.5 0.355 0.357 0.563
1 0.410 0.410 0.000
2 0.505 0.485 -3.960
5 0.650 0.665 2.308


Reverse Recovery Characteristic

400mA

300mA

200mA

100mA

-0mA

-100mA

-200mA

-300mA

-400mA
1.7us 1.8us 1.9us 2.0us 2.1us 2.2us 2.3us 2.4us 2.5us 2.6us
I(R1)
Time

Evaluation Circuit

R1

50
D8A02
V1 = -9.8v
V1
V2 = 10.3v
TD = 59n
TR = 10ns
TF = 10ns
PW = 2us U11
PER = 100us

0

Compare Measurement vs. Simulation

Trr Measurement Simulation Error (%)
Trj+Trb(ns) 124.500 124.548 0.039


Reverse Recovery Characteristic Reference

Trj=24.5(ns)
Trb=100(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50

Example

Relation between trj and trb


Zener Voltage Characteristic

10mA

9mA

8mA

7mA

6mA

5mA

4mA

3mA

2mA

1mA

0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1

Evaluation Circuit

U24

R1 TPC8A02-H R2

0.01m 100MEG
V1
0Vdc

0


Zener Voltage Characteristic Reference


SPICE MODEL of TPC8A02-H (Professional+ZDSP Model) in SPICE PARK

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