SPICE MODEL of 2SJ492 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Model parameters)
PART NUMBER: 2SJ492
MANUFACTURER: NEC
REMARK: P Channel Model
Body Diode (Model parameters) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

2. MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

3. Transconductance Characteristic
Circuit Simulation Result
12
Measurement
Simulation
TRANSCONDUCTANCE GFS(s)
10
8
6
4
2
0 2 4 6 8 10
- DRIAN CURRENT ID (A)
Comparison table
gfs
Id(A) Error(%)
Measurement Simulation
-1 3.298 3.289 -0.273
-2 4.700 4.587 -2.401
-5 7.280 7.072 -2.855
-10 9.980 9.718 -2.624
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

4. Vgs-Id Characteristic
Circuit Simulation result
-100A
-100mA
0V -5V -10V
I(V3)
V_VGS
Evaluation circuit
V3
0Vdc
U2
2SJ492 VDS
-10Vdc
VGS
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

5. Comparison Graph
Circuit Simulation Result
100
Measurement
Simulation
- Drain Current ID (A)
10
1
0.1
0 1.25 2.5 3.75 5
- Gate - Source Voltage VGS (V)
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
-0.1 1.720 1.675 -2.628
-0.2 1.800 1.755 -2.511
-0.5 1.950 1.915 -1.821
-1 2.100 2.096 -0.186
-2 2.300 2.356 2.430
-5 2.800 2.882 2.921
-10 3.400 3.491 2.682
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

6. Rds(on) Characteristic
Circuit Simulation result
-10A
-8A
-6A
-4A
-2A
0A
0V -140mV -280mV -420mV -560mV -700mV
I(V3)
V_VDS
Evaluation circuit
V3
0Vdc
U2
2SJ492 VDS
-10Vdc
VGS
-10Vdc
0
Simulation Result
ID=-10A, VGS=-10V Measurement Simulation Error (%)
R DS (on) m 70.00 70.00 0.00
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

7. Gate Charge Characteristic
Circuit Simulation result
-16V
-14V
-12V
-10V
-8V
-6V
-4V
-2V
0V
0 10n 20n 30n 40n 50n 60n 70n 80n
V(W1:1)
Time*1mA
Evaluation circuit
Vsense
I1
D1
U2
2SJ492 Dbreak -20Adc
W
I2 -
+
TD = 0
W1 VD
ION = 0A -48Vdc
IOFF = 1mA
0
Simulation Result
VDD=-48V,ID=-20A
,VGS=-10V Measurement Simulation Error (%)
Qgs nc 8.00 7.96 -0.46
Qgd nc 10.00 10.00 0.00
Qg nc 42.00 30.47 -27.45
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
-1 750.00 749.24 -0.10
-2 620.00 621.55 0.25
-5 460.00 455.88 -0.90
-10 360.00 358.54 -0.41
-20 280.00 275.44 -1.63
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

9. Switching Time Characteristic
Circuit Simulation result
-20V
-16V
-12V
-8V
-4V
0V
4V
8V
0.92us 0.96us 1.00us 1.04us 1.08us 1.12us
V(L3:1)*1 V(3)/2.05
Time
Evaluation circuit
Vsense RL
3
3.0
R2 L3 2
VD
1nH U2
V1 = 0 10 2SJ492 -30Vdc
V2 = 20
TD = 1u R1
TF = 10n V1
PW = 10u 10
PER = 10m
TR = 10n
0
Simulation Result
ID=-10A, VDD=-30V
Measurement Simulation Error(%)
VGS=0/-10V
td (on) ns 16.000 15.786 -1.34
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

10. Output Characteristic
Circuit Simulation result
-20A
-4V
-16A
-12A
-8A
-3V
-4A
VGS=-2V
0A
0V -2V -4V -6V -8V -10V -12V -14V -16V -18V -20V
I(V3)
V_VDS
Evaluation circuit
V3
0Vdc
U2
2SJ492 VDS
-10Vdc
VGS
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

11. Output Characteristic Reference
Measurement
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

12. BODY DIODE
Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
100mA
0V 1.0V 2.0V 3.0V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
U1
2SJ492
V1
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

13. Comparison Graph
Circuit Simulation Result
100
Measurement
Simulation
- Drain reverse Current - IDR (A)
10
1
0.1
0 1 2
Drain - Source Voltage VDS (V)
Simulation Result
VDS(V)
IDR(A) %Error
Measurement Simulation
-0.1 0.610 0.609 -0.131
-0.2 0.640 0.638 -0.344
-0.5 0.680 0.683 0.441
-1 0.720 0.723 0.417
-2 0.780 0.779 -0.141
-5 0.890 0.890 -0.056
-10 1.020 1.022 0.176
-20 1.240 1.238 -0.194
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

14. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
0.7us 0.9us 1.1us 1.3us 1.5us 1.7us
I(R1)
Time
Evaluation Circuit
R1 50
U1
2SJ492
V1 = -9.50V V1
V2 = 10.8V
TD = 0
TR = 10ns
TF = 5.7ns
PW = 1us
PER = 50us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trr ns 148.00 147.91 -0.06
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

15. Reverse Recovery Characteristic Reference
Measurement
Trj=72.00(ns)
Trb=76.00(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

16. ESD PROTECTION DIODE
Zener Voltage Characteristic
Circuit Simulation Result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
open
open
U1 2SJ492
V1
0Vdc Ropen
100MEG
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

17. Zener Voltage Characteristic Reference
Measurement
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007