SPICE MODEL of TPC6107 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Model Parameter)
PART NUMBER: TPC6107
MANUFACTURER: TOSHIBA
REMARK: P Channel Model
Body Diode (Model Parameter) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

2. MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

3. Transconductance Characteristic
Circuit Simulation Result
16.00
Measurement
Simulation
14.00
12.00
10.00
GFS (s)
8.00
6.00
4.00
2.00
0.00
0.00 2.00 4.00 6.00
DRAIN CURRENT - ID (A)
Comparison table
gfs
Id(A) Error(%)
Measurement Simulation
-0.100 2.000 1.904 -4.800
-0.200 2.500 2.672 6.880
-0.500 4.200 4.163 -0.881
-1.000 5.800 5.787 -0.224
-2.000 7.900 7.830 -0.886
-5.000 12.200 12.057 -1.172
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

4. Vgs-Id Characteristic
Circuit Simulation result
-10A
-5A
0A
0V -1.0V -2.0V -2.5V
I(V3)
V_V1
Evaluation circuit
V3
0Vdc
U5
V2
-10
TPC6107
-3 V1
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

5. Comparison Graph
Circuit Simulation Result
10
9
Measurement
8 Simulation
7
Drain current - ID (A)
6
5
4
3
2
1
0
0.0 0.5 1.0 1.5 2.0 2.5
Gate-source voltage - VGS (V)
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
-0.200 -1.255 -1.239 -1.275
-0.500 -1.350 -1.329 -1.556
-1.000 -1.480 -1.431 -3.311
-2.000 -1.600 -1.579 -1.313
-5.000 -1.870 -1.883 0.695
-10.000 -2.250 -2.243 -0.311
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

6. Rds(on) Characteristic
Circuit Simulation result
-2.2A
-2.0A
-1.8A
-1.6A
-1.4A
-1.2A
-1.0A
-0.8A
-0.6A
-0.4A
-0.2A
0A
0V -20mV -40mV -60mV -80mV
I(V2)
V_V3
Evaluation circuit
V2
0Vdc
U3
V3
0Vdc
V1 TPC6107
-4.5
0
Simulation Result
ID=-2.2A, VGS=-4.5V Measurement Simulation Error (%)
R DS (on) 40.000 m 40.000 m 0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

7. Gate Charge Characteristic
Circuit Simulation result
-12V
-10V
-4.0V
-8V
-6V
VDD=-16V
-8V
-4V
-2V
0V
0 5n 10n 15n 20n
V(W1:4)
Time*1mA
Evaluation circuit
U3
W I2
- D1
+ Dbreak -4.5
I1 TD = 0 W1 TPC6107
TF = 10n IOFF = 100uA
PW = 200u ION = 0 V1
PER = 500u ROFF = 1e6
I1 = 0 RON = 1.0
I2 = 1m -16
TR = 10n
0
Simulation Result
VDD=-16V,ID=-4.5A Measurement Simulation Error (%)
,VGS=-5V
Qgs 2.000 nC 2.000 nC 0.000
Qgd 3.000 nC 3.020 nC 0.667
Qg 10.000 nC 10.045 nC 0.450
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
-0.100 100.000 100.000 0.000
-0.200 92.000 90.000 -2.174
-0.500 75.000 74.000 -1.333
-1.000 55.000 53.000 -3.636
-2.000 35.000 34.500 -1.429
-5.000 15.000 14.500 -3.333
-10.000 8.000 8.000 0.000
-20.000 4.000 4.100 2.500
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

9. SwitchingTime Characteristic
Circuit Simulation result
-10V
-9V
-8V
-7V
-6V
-5V
-4V
-3V
-2V
-1V
0V
1.90us 1.95us 2.00us 2.05us 2.10us 2.15us 2.20us
V(2) V(3)/2
Time
Evaluation circuit
3 L1 R2
50nH
4.5
U2
L2 V1
30nH 2 -10
V1 = 0 V2 R4 TPC6107
V2 = -5
TD = 2u 4.7
TR = 4n
TF = 4n
PW = 10u
PER = 30u
0
Simulation Result
ID=-2.2A, VDD=-10V
Measurement Simulation Error(%)
VGS=-5V
ton 16.000 ns 15.893 ns -0.669
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

10. Output Characteristic
Circuit Simulation result
-10A
-2.2 V
-2.3 V
-8A -5.0V
-4.0V
-3.0V
-2.5V
-2.0 V
-6A
-1.9 V
-4A
-1.8 V
-1.7 V
-2A -1.6 V
VGS=-2.2V
0A
0V -1.0V -2.0V -3.0V -4.0V -5.0V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
U2
V2
V1 TPC6107
0
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

11. BODY DIODE SPICE MODEL
Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
100mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
U2
V1
0Vdc
TPC6107
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

12. Comparison Graph
Circuit Simulation Result
100
Measurement
Simulation
IDR (A)
10
Drain Reverse Current
1
0
0.00 0.20 0.40 0.60 0.80 1.00 1.20
Source-Drain Voltage VDS (V)
Simulation Result
VDS(V) VDS(V)
IDR(A) Measurement Simulation %Error
0.100 0.590 0.590 0.000
0.200 0.630 0.628 -0.317
0.500 0.680 0.680 0.000
1.000 0.730 0.726 -0.548
2.000 0.780 0.777 -0.385
5.000 0.880 0.851 -3.295
10.000 0.960 0.915 -4.687
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
200mA
0A
-200mA
-400mA
14.96us 15.00us 15.04us 15.08us 15.12us
I(RL)
Evaluation Circuit Time
RL
50
V1 = -9.35 V1
V2 = 10.75 U4
TD = 0
TR = 10n
TF = 10n
PW = 15u
PER = 100u
TPC6107
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj 18.400 ns 18.652 ns 1.370
trb 27.000 ns 31.579 ns 16.959
trr 45.400 ns 50.231 ns 10.641
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

14. Reverse Recovery Characteristic Reference
Trj=18.4(ns)
Trb=27.0(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

15. ESD PROTECTION DIODE SPICE MODEL
ZenerVoltage Characteristic
Circuit Simulation Result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1
Evaluation Circuit
U1
R1
0.01m
TPC6107
R2
V1
0Vdc 1G
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

16. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006