SPICE MODEL of 2SJ492 (Professional+BDP Model) in SPICE PARK

Device Modeling Report

COMPONENTS: Power MOSFET (Professional Model)
PART NUMBER: 2SJ492
MANUFACTURER: NEC
REMARK: P Channel Model
Body Diode (Professional Model ) / ESD Protection Diode

Bee Technologies Inc.

All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

MOSFET MODEL

Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility


Transconductance Characteristic

Circuit Simulation Result

12
Measurement
Simulation
TRANSCONDUCTANCE GFS(s)

10

8

6

4

2
0 2 4 6 8 10
- DRIAN CURRENT ID (A)
Comparison table

gfs
Id(A) Error(%)
Measurement Simulation
-1 3.298 3.289 -0.273
-2 4.700 4.587 -2.401
-5 7.280 7.072 -2.855
-10 9.980 9.718 -2.624


Vgs-Id Characteristic

Circuit Simulation result

-100A

-100mA
0V -5V -10V
I(V3)
V_VGS

Evaluation circuit

V3
0Vdc

U2
2SJ492 VDS
-10Vdc

VGS
0Vdc

0


Comparison Graph


100
Measurement
Simulation
- Drain Current ID (A)

10

1

0.1
0 1.25 2.5 3.75 5
- Gate - Source Voltage VGS (V)
Simulation Result

VGS(V)
ID(A) Error (%)
-0.1 1.720 1.675 -2.628
-0.2 1.800 1.755 -2.511
-0.5 1.950 1.915 -1.821
-1 2.100 2.096 -0.186
-2 2.300 2.356 2.430
-5 2.800 2.882 2.921
-10 3.400 3.491 2.682


Rds(on) Characteristic


-10A

-8A

-6A

-4A

-2A

0A
0V -140mV -280mV -420mV -560mV -700mV
I(V3)
V_VDS
Evaluation circuit

V3
0Vdc

U2
2SJ492 VDS
-10Vdc

VGS
-10Vdc

0

Simulation Result

ID=-10A, VGS=-10V Measurement Simulation Error (%)
R DS (on) m 70.00 70.00 0.00


Gate Charge Characteristic

-16V

-14V

-12V

-10V

-8V

-6V

-4V

-2V

0V
0 10n 20n 30n 40n 50n 60n 70n 80n
V(W1:1)
Time*1mA
Evaluation circuit

Vsense

I1
U4 D1
2SJ492_PRO Dbreak -20Adc

W
I2 -
+
TD = 0
W1 VD
ION = 0A -48Vdc
IOFF = 1mA

0

Simulation Result

VDD=-48V,ID=-20A
,VGS=-10V Measurement Simulation Error (%)
Qgs nc 8.000 7.962 -0.475
Qgd nc 10.000 9.927 -0.730
Qg nc 42.000 41.852 -0.352


Capacitance Characteristic

Measurement
Simulation

Simulation Result

Cbd(pF)
VDS(V) Error(%)
-1 750.00 749.24 -0.10
-2 620.00 621.55 0.25
-5 460.00 455.88 -0.90
-10 360.00 358.54 -0.41
-20 280.00 275.44 -1.63


Switching Time Characteristic

-20V

-16V

-12V

-8V

-4V

0V

4V

8V
0.92us 0.96us 1.00us 1.04us 1.08us 1.12us
V(2) V(3)/3
Time

Evaluation circuit

Vsense RL
3

3.0

R2 L3
2
U3 VD
20nH
V2 = 20 10 2SJ492_PRO -30Vdc
V1 = 0 V1
TF = 10n R1
TD = 1u
TR = 10n 10
PW = 10u
PER = 10m

0

Simulation Result

ID=-10A, VDD=-30V
Measurement Simulation Error(%)
VGS=0/-10V
td (on) ns 16.000 15.906 -0.59


Output Characteristic


-20A

-4V
-16A

-12A

-8A

-3V
-4A
VGS=-2V

0A
0V -2V -4V -6V -8V -10V -12V -14V -16V -18V -20V
I(V3)
V_VDS
Evaluation circuit

V3
0Vdc

U2
2SJ492 VDS
-10Vdc

VGS
0Vdc

0


Output Characteristic Reference

Measurement


BODY DIODE
Forward Current Characteristic


100A

10A

1.0A

100mA
0V 1.0V 2.0V 3.0V
I(R1)
V_V1
Evaluation Circuit

R1

0.01m
U1
2SJ492

V1

0Vdc

0


Comparison Graph


100
Measurement
Simulation
- Drain reverse Current - IDR (A)

10

1

0.1
0 1 2
Drain - Source Voltage VDS (V)

Simulation Result

VDS(V)
IDR(A) %Error
-0.1 0.610 0.609 -0.131
-0.2 0.640 0.638 -0.344
-0.5 0.680 0.683 0.441
-1 0.720 0.723 0.417
-2 0.780 0.779 -0.141
-5 0.890 0.890 -0.056
-10 1.020 1.022 0.176
-20 1.240 1.238 -0.194


Reverse Recovery Characteristic


400mA

300mA

200mA

100mA

-0mA

-100mA

-200mA

-300mA

-400mA
0.7us 0.9us 1.1us 1.3us 1.5us 1.7us
I(R1)
Time
Evaluation Circuit

R1 50

V1 = -9.50V U1
V2 = 10.7V V1 D2SJ492_PRO
TD = 45n
TR = 10ns
TF = 5.7ns
PW = 1us
PER = 50us

0

Compare Measurement vs. Simulation

Measurement Simulation Error (%)
trj ns 72.00 72.10 0.14
trb ns 76.00 75.88 -0.16
trr ns 148.00 147.98 -0.01


Reverse Recovery Characteristic Reference

Measurement

Trj=72.00(ns)
Trb=76.00(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50

Example

Relation between trj and trb


ESD PROTECTION DIODE

Zener Voltage Characteristic


10mA

9mA

8mA

7mA

6mA

5mA

4mA

3mA

2mA

1mA

0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1

Evaluation Circuit

R1

0.01m
open
open
U1 2SJ492
V1
0Vdc Ropen
100MEG

0

0


Zener Voltage Characteristic Reference

Measurement


SPICE MODEL of 2SJ492 (Professional+BDP Model) in SPICE PARK

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