This document summarizes the modeling and simulation of a Power MOSFET transistor. It describes the device components and equivalent circuit model. Simulation results are provided for key characteristics like transconductance, output, gate charge, capacitance and switching times. Comparisons to measurement data show good agreement between simulation and real-world device performance.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Professional)
PART NUMBER: 2SK4108
MANUFACTURER: TOSHIBA
Body Diode (Professional) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

2. Circuit Configuration
Equivalent Circuit
D
S
- -
+ +
R3
S2 10MEG DGD
R1 CGD
10M S1
+ +
- -
S M1
G
S
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

3. MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

4. Transconductance Characteristic
Circuit Simulation Result
6
Measurement
Simulation
5
4
gfs
3
2
1
0
0 0.25 0.5 0.75 1 1.25 1.5 1.75 2
ID : Drain Current A
Comparison table
Id(A) gfs Error(%)
Measurement Simulation
0.100 0.650 0.667 2.615
0.200 1.500 1.500 0.000
0.500 2.500 2.500 0.000
1.000 3.500 3.571 2.029
2.000 5.500 5.556 1.018
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

5. Vgs-Id Characteristic
Circuit Simulation result
10A
1.0A
100mA
0V 2V 4V 6V 8V 10V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
U1
2SK4108 Vv ariable
10Vdc
10Vdc
V2
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

6. Comparison Graph
Circuit Simulation Result
10.000
Measurement
Simulation
ID : Drain Current A
1.000
0.100
0.0 2.0 4.0 6.0 8.0 10.0
VGS : Gate to Source Voltage V
Simulation Result
ID(A) VGS(V) Error (%)
Measurement Simulation
0.1 3.765 3.950 4.914
0.2 3.850 4.035 4.805
0.5 4.010 4.181 4.264
1 4.200 4.353 3.643
2 4.490 4.601 2.472
5 4.990 5.095 2.104
10 5.480 5.673 3.522
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

7. Rds(on) Characteristic
Circuit Simulation result
12A
10A
8A
6A
4A
2A
0A
0V 0.5V 1.0V 1.5V 2.0V 2.5V
I(V3)
V_VDS
Evaluation circuit
V3
0Vdc
U1
2SK4108
VDS
10Vdc
0Vdc
VGS
0
Simulation Result
ID=10 A, VGS=10V Measurement Simulation Error (%)
R DS (on) () 0.210 0.210 0.005
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

8. Gate Charge Characteristic
Circuit Simulation result
20V
16V
12V
8V
4V
0V
0 20n 40n 60n 80n 100n 120n
V(W1:3)
Time*1mS
Evaluation circuit
V2
0Vdc
PER = 1000u U1 Dbreak
PW = 600u W1 2SK4108
TF = 10n + D1
TR = 10n I2
-
TD = 0 20Adc
I2 = 1m W
I1 = 0 I1 IOFF = 0.1mA
ION = 0uA
V1
400Vdc
0
Simulation Result
VDD=400V,ID=20A Measurement Simulation Error (%)
,VGS=10V
Qgs(nc) 24.000 24.000 0.000
Qgd(nc) 26.000 26.000 0.000
Qg(nc) 69.000 68.842 -0.229
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

9. Capacitance Characteristic
Measurement
Simulation
Simulation Result
VDS(V) Cbd(pF) Error(%)
Measurement Simulation
0.1 4400.000 4410.000 0.227
0.2 4200.000 4210.000 0.238
0.5 3700.000 3695.000 -0.135
1 3100.000 3070.000 -0.968
2 2250.000 2270.000 0.889
5 1220.000 1230.000 0.820
10 750.000 755.000 0.667
20 370.000 385.000 4.054
50 212.000 203.000 -4.245
100 153.000 147.000 -3.922
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

10. Switching Time Characteristic
Circuit Simulation result
12V
10V
8V
6V
4V
2V
0V
1.85us 1.95us 2.05us 2.15us 2.25us 2.35us
V(2) V(3)/20
Time
Evaluation circuit
3 L2
50n
L1 2 RL
U1
2SK4108 20
V1 = 0 30nH
V2 = 10 V2
TD = 2u R2 VDD
TR = 6n 200Vdc
TF = 7n 50
PW = 2u
PER = 10u
0
Simulation Result
ID=10A, VDD=200V Measurement Simulation Error(%)
VGS=10V
Ton(ns) 130.000 130.097 0.075
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

11. Output Characteristic
Circuit Simulation result
10A
10.0V
8.0V
6.0V
8A 5.5V
6A
5.25V
4A 5.0V
2A
4.5V
VGS=4.0 V
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(Vdsense)
V_Vvariable
Evaluation circuit
Vdsense
0Vdc
U1
2SK4108
Vv ariable
10Vdc
0Vdc
Vstep
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

12. Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
100mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1
0Vdc U1
D2SK4108
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

13. Comparison Graph
Circuit Simulation Result
100.000
Measurement
Simulation
Drain reverse current IDR(A)
10.000
1.000
0.100
0 0.2 0.4 0.6 0.8 1 1.2 1.4
Source: Drain voltage VSD(V)
Simulation Result
IDR(A) VDS(V) VDS(V) %Error
Measurement Simulation
0.100 0.600 0.599 -0.167
0.200 0.620 0.622 0.323
0.500 0.655 0.656 0.153
1.000 0.690 0.686 -0.580
2.000 0.725 0.724 -0.138
5.000 0.800 0.798 -0.313
10.000 0.892 0.895 0.336
20.000 1.070 1.069 -0.093
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

14. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
200mA
0A
-200mA
-400mA
18us 19us 20us 21us 22us 23us 24us 25us 26us 27us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.4V V1
V2 = 10.6V
TD = 0.3u
TR = 10ns U1
TF = 19ns D2SK4108
PW = 20us
PER = 100us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
Trj(us) 1.680 1.680 0.000
Trb(us) 1.000 1.008 0.830
Trr(us) 2.680 2.688 0.310
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

15. Reverse Recovery Characteristic Reference
Trj=1.68(us)
Trb=1.0(us)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Example
Relation between trj and trb
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

16. Zener Voltage Characteristic
Circuit Simulation Result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V 10V 20V 30V 40V 50V 60V 70V 80V 90V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1
0Vdc U1 2SK4108
R2
100MEG
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

17. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007