SPICE MODEL of RJU002N06 (Professional+BDP Model) in SPICE PARK

Device Modeling Report

COMPONENTS: MOSFET (Professional Model)
PART NUMBER: RJU002N06
MANUFACTURER: ROHM
REMARK: Body Diode (Professional Model)/
ESD Protection Diode

Bee Technologies Inc.

All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
1

Circuit Configuration

U1
RJU002N06

Equivalent Circuit

D

S1
- -
+ +
R2
S
R1 10MEG DGD

10M CGD
S2
+ +
- -

Q1
S
G

S

2

MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility

3

Transconductance Characteristics

Circuit Simulation result

VDS=10V

Comparison table

gfs (S)
ID (A) %Error
Measurement Simulation
0.005 0.053 0.055 3.36
0.01 0.086 0.087 1.64
0.02 0.137 0.138 0.52
0.05 0.228 0.229 0.48
0.1 0.330 0.329 -0.18

4

Vgs-Id Characteristics


1.0A

100mA

10mA

1.0mA
0V 0.5V 1.0V 1.5V 2.0V 2.5V
I(U1:D)
V_VGS

Evaluation circuit

U1
RJU002N06 V2

VGS 10V

0

5

Comparison Graph


VDS=10V

Comparison table

VGS (V)
ID (A) %Error
0.001 1.107 1.157 4.50
0.002 1.152 1.182 2.60
0.005 1.214 1.231 1.36
0.01 1.286 1.286 0.03
0.02 1.374 1.364 -0.69
0.05 1.527 1.520 -0.48
0.1 1.696 1.695 -0.10
0.2 1.955 1.943 -0.65

6

Rds(on) Characteristics


250mA

200mA

150mA

100mA

50mA

0A
0V 100mV 200mV 300mV
I(U1:D)
V_V2

Evaluation circuit

U1
RJU002N06
V2

VGS
4V

0

Test condition: VGS=4(V), ID=200(mA)
Parameter Unit Measurement Simulation %Error
RDS(on) Ω 1.7 1.7 0.0

7

Output Characteristics


500mA

4
400mA
3
3.5

300mA

2

200mA

100mA
VGS=1.5V

0A
0V 0.2V 0.4V 0.6V 0.8V 1.0V
I(U1:D)
V_V2

Evaluation circuit

U1
RJU002N06
V2

VGS

0

8

Capacitance Characteristics

Simulation result

Measurement
Simulation

Comparison table

Cbd (pF)
VDS (V) %Error
0.1 26.40 26.22 -0.68
0.2 22.33 22.15 -0.81
0.5 14.00 14.5 3.57
1 8.98 8.55 -4.77
2 3.87 4.05 4.65

9

Gate Charge Characteristics


10V

8V

6V

4V

2V

0V
0 0.5n 1.0n 1.5n 2.0n
V(W1:3)
Time*1mA

Evaluation circuit

U1 D1 ID
RJU002N06 dmod 200mA

I1 = 0 W1
I2 = 1m + VDD
TF = 10n 48V
TR = 10n -
TD = 0 IG W
PER = 1 IOFF = 1mA
PW = 10m ION = 0

0

Test condition: VDD=48(V), VGS=10(V), ID=200(mA)
Qgs nc 0.120 0.120 0.10
Qgd nc 0.320 0.320 -0.12
Qg nc 0.460 0.461 0.12

10

Switching Time Characteristics


6.0V

4.0V

2.0V

0V
1.920us 1.960us 2.000us 2.040us 2.080us
V(U1:G) V(U1:D)/7.5
Time

Evaluation circuit

L2
2 1
U1
30nH
RJU002N06
R1 L1 RL
2 1 300
V1 = 0 10 30nH
V2 = 4
TD = 2u V1 VDD
TR = 20n
TF = 20n 30
PW = 5u
PER = 500u

0

Test condition: VDD=30(V), VGS=0/4(V), ID=100(mA)
ton ns 14.000 14.001 0.01

11

Equivalent Circuit

F1
A
G1 R2 S1 S
F
R1 E1 300 - - VON = 100mV
IN+ OUT+ 1 VOFF = 90mV
IN- OUT- + +
+ +
- C1 ROFF = 50MEG
GVALUE
- RON = 1m
E 100p

D1 D2

K
{V(N00091,N00063)-V(N00022,N00019)}
0

Circuit Configuration

U1
DRJU002N06_P

12

Body Diode Forward Current Characteristics


1.0A

100mA

10mA

1.0mA
0V -0.5V -1.0V -1.5V
I(VDS)
V_VDS

Evaluation circuit

U1
VDS RJU002N06

0

13

Comparison Graph

Simulation result

Comparison table

VSD (V)
IDR (A) %Error
0.001 0.613 0.616 0.53
0.002 0.634 0.640 0.90
0.005 0.671 0.671 0.05
0.01 0.695 0.695 0.02
0.02 0.721 0.720 -0.05
0.05 0.754 0.756 0.21
0.1 0.788 0.787 -0.10
0.2 0.825 0.825 0.00

14

Reverse Recovery Characteristics


400mA

300mA

200mA

100mA

-0mA

-100mA

-200mA

-300mA

-400mA
0.84us 0.92us 1.00us 1.08us 1.16us 1.24us
I(R1)
Time

Evaluation circuit

R1

V1 = -9.2V 50
V2 = 10.8V U1
TD = 0ns V1
DRJU002N06_P
TR = 3ns
TF = 5ns
PW = 1us
PER = 100us

0

Comparison Measurement vs. Simulation
trj ns 19.800 19.864 0.32
trb ns 5.200 5.197 -0.06
trr ns 25.000 25.061 0.24

15

Reverse Recovery Characteristics Reference

Measurement

Trj = 19.8(ns)
Trb = 5.2(ns)
Conditions: Ifwd = lrev = 0.2(A), Rl = 50

Example

Relation between trj and trb

16

ESD PROTECTION DIODE
Zener Voltage Characteristics


1.0mA

0.9mA

0.8mA

0.7mA

0.6mA

0.5mA

0.4mA

0.3mA

0.2mA

0.1mA

0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
-I(VGS)
V_VGS

Evaluation circuit

U1
RJU002N06

R1
VGS
1G

0

17

Zener Voltage Characteristics Reference

Measurement

IZ = 100(uA)
VZ = 19.15(V) at IZ=114uA

18

SPICE MODEL of RJU002N06 (Professional+BDP Model) in SPICE PARK

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