SPICE MODEL of 2SK2992 (Professional+BDP Model) in SPICE PARK
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SPICE MODEL of 2SK2992 (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of 2SK2992 (Professional+BDP Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: MOSFET (Professional) PART NUMBER: 2SK2992 MANUFACTURER: TOSHIBA Body Diode (Professional) / ESD Protection Diode Bee Technologies Inc. . All Rights Reserved Copyright (C) Bee Technologies Inc. 2006
- 2. MOSFET MODEL PARAMETERS PSpice model Model description parameters LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (C) Bee Technologies Inc. 2006
- 3. Transconductance Characteristic Circuit Simulation Result 10 Measurement Simulation TRANSCONDUCTANCE Gfs(s) 1 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 DRIAN CURRENT ID (A) Comparison table Gfs(S) Id(A) Measurement Simulation Error(%) 0.1 0.09704 0.09804 1.03051 0.2 0.22927 0.22727 -0.87232 0.4 0.34854 0.35054 0.57382 1.2 0.56366 0.55787 -1.02722 1.6 0.70985 0.70765 -0.30992 2 1.03093 1.04033 0.91180 All Rights Reserved Copyright (C) Bee Technologies Inc. 2006
- 4. Vgs-Id Characteristic Circuit Simulation result 2.0A 1.6A 1.2A 0.8A 0.4A 0A 0V 2V 4V 6V 8V 10V I(Vsense) V_VGS Evaluation circuit Vsense U1 2SK2992_pro VDS 10Vdc VGS 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2006
- 5. Comparison Graph Circuit Simulation Result 2 Measurement Simulation 1.6 DRAIN CURRENT ID (A) 1.2 0.8 0.4 0 0 2 4 6 8 10 GATE-SOURCE VOLTAGE VGS (V) Simulation Result VGS(V) ID(A) Error (%) Measurement Simulation 0.1 3.4000 3.4298 0.8765 0.2 3.6500 3.6456 -0.1205 0.4 4.0000 3.9700 -0.7500 1.2 4.7000 4.7187 0.3979 1.6 5.0000 5.0006 0.0120 2 5.3000 5.3807 1.5217 All Rights Reserved Copyright (C) Bee Technologies Inc. 2006
- 6. Rds(on) Characteristic Circuit Simulation result 220mA 198mA 176mA 154mA 132mA 110mA 88mA 66mA 44mA 22mA 0A 0V 0.1V 0.3V 0.5V 0.7V 0.9V I(Vsense) V_VDS Evaluation circuit Vsense U1 2SK2992_pro VDS VGS 10Vdc 0 Simulation Result ID=0.5A, VGS=10V Measurement Simulation Error (%) R DS (on) 2.2 2.2 0.000 All Rights Reserved Copyright (C) Bee Technologies Inc. 2006
- 7. Gate Charge Characteristic Circuit Simulation result 16V 14V 12V 10V 8V 6V 4V 2V 0V 0 1n 2n 3n 4n 5n 6n 7n 8n 9n 10n V(W1:3) Time*1mA Evaluation circuit Vsense U1 2SK2992_pro I1 D1 Dbreak 1Adc W1 + - I2 TD = 0 W VD ION = 0A 160Vdc IOFF = 1mA 0 Simulation Result VDD=160V, Measurement Simulation Error (%) ID=1A Qgs 0.3600 nC 0.3590 nC -0.2778 Qgd 1.0800 nC 1.0850 nC 0.4630 Qg 3.920 nC 3.9000 nC 0.5100 All Rights Reserved Copyright (C) Bee Technologies Inc. 2006
- 8. Gate Charge Characteristic Reference VGS-Qg 16 VDD=22V 14 12 10 VGS (V) 8 6 4 2 0 0 1 2 3 4 Qg (nC) All Rights Reserved Copyright (C) Bee Technologies Inc. 2006
- 9. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) VDS(V) Measurement Simulation Error(%) 5 24.000 24.119 0.496 10 19.000 18.911 -0.468 20 13.500 13.514 0.104 50 7.600 7.615 0.197 All Rights Reserved Copyright (C) Bee Technologies Inc. 2006
- 10. Switching Time Characteristic Circuit Simulation result 12V 11V 10V 9V 8V 7V 6V 5V 4V 3V 2V 1V 0V -1V -2V 0.85us 0.95us 1.05us 1.15us 1.25us V(L3:1)*1 V(L2:2)/10 Time Evaluation circuit Vsense RL 3 200 V1 = 0 U1 2SK2992_pro V2 = 20 R2 L3 2 TD = 1u VD 30nH 200 100Vdc TR = 10n V1 R1 TF = 10n 200 PW = 10u PER = 10m 0 Simulation Result ID=0.5A, VDD= 100V, Measurement Simulation Error(%) VGS=0/10V Td(on) 17.000 ns 17.012 ns 0.0706 All Rights Reserved Copyright (C) Bee Technologies Inc. 2006
- 11. Output Characteristic Circuit Simulation result 6V 5V 1.0A 4.7V 8.0V 0.9A 10V 4.5V 0.8A 0.7A 4.3V 0.6A 0.5A 0.4A 4V 0.3A 3.75V 0.2A VGS= 3.5V 0.1A 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V I(Vsense) V_VDS Evaluation circuit Vsense U1 2SK2992_pro VDS VGS 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2006
- 12. BODY DIODE SPICE MODEL Forward Current Characteristic Circuit Simulation Result 5.0A 1.0A 100mA 500mV 1.0V 1.2V I(R1) V_V1 Evaluation Circuit R1 0.01m U1 2SK2992_pro V1 0Vdc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2006
- 13. Comparison Graph Circuit Simulation Result 10 Measurement Simulation DRAIN REVERSE CURRENT IDR (A) 1 0.1 0.5 0.7 0.9 1.1 SOURCE-DRAIN VOLTAGE VSD (V) Simulation Result VSD(V) IDR(A) %Error Measurement Simulation 0.1 0.7500 0.7469 -0.4133 0.2 0.7800 0.7800 0.0000 0.5 0.8300 0.8320 0.2410 1 0.9200 0.9210 0.1087 1.5 1.0200 1.0132 -0.6667 All Rights Reserved Copyright (C) Bee Technologies Inc. 2006
- 14. Reverse Recovery Characteristic (Body Diode) Circuit Simulation Result 400mA 200mA 0A -200mA -400mA 0.4us 0.8us 1.2us 1.6us 2.0us 2.4us I(R1) Time Evaluation Circuit R1 50 V1 = -9.3V U1 D2SK2992_PRO V2 = 10.8V TD = 100n TR = 6ns V1 TF = 5.7ns PW = 1us PER = 50us 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) trj 196.000 ns 196.120 ns 0.061 trb 108.000 ns 108.500 ns 0.463 trr 304.000 ns 305.200 ns 0.395 All Rights Reserved Copyright (C) Bee Technologies Inc. 2006
- 15. Reverse Recovery Characteristic (Body Diode) Reference Trj= (196ns) Trb= (108ns) Conditions:Ifwd=0.2,lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (C) Bee Technologies Inc. 2006
- 16. Zener Voltage Characteristic Circuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 5V 10V 20V 30V 40V 50V 60V I(R1) V_V1 Evaluation Circuit U1 2SK2992_pro R1 0.01m V1 IOPEN 0Vdc 0Adc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2006
- 17. Zener Voltage Characteristic Reference All Rights Reserved Copyright (C) Bee Technologies Inc. 2006