SPICE MODEL of 2SK2963 (Standard+BDS Model) in SPICE PARK
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SPICE MODEL of 2SK2963 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of 2SK2963 (Standard+BDS Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: MOSFET (Model Parameters) PART NUMBER: 2SK2963 MANUFACTURER: TOSHIBA Body Diode (Model Parameters) / ESD Protection Diode Bee Technologies Inc. . All Rights Reserved Copyright (C) Bee Technologies Inc. 2006
- 2. MOSFET MODEL PARAMETERS PSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (C) Bee Technologies Inc. 2006
- 3. Transconductance Characteristic Circuit Simulation Result 10 Measurement Simulation TRANSCONDUCTANCE Gfs(s) 1 0.1 0.1 0.6 1.1 1.6 2.1 2.6 DRIAN CURRENT ID (A) Comparison table Gfs(S) Id(A) Error(%) Measurement Simulation 0.1 0.5001 0.5000 -0.0240 0.2 0.6500 0.6510 0.1538 0.4 0.9311 0.9302 -0.0942 0.8 1.4056 1.4109 0.3827 1.2 1.8333 1.8440 0.5844 1.6 2.1900 2.1891 -0.0434 2 2.5111 2.5000 -0.4424 All Rights Reserved Copyright (C) Bee Technologies Inc. 2006
- 4. Vgs-Id Characteristic Circuit Simulation result 2.0A 1.8A 1.6A 1.4A 1.2A 1.0A 0.8A 0.6A 0.4A 0.2A 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V I(Vsense) V_VGS Evaluation circuit Vsense U1 2SK2963 VDS 10Vdc VGS 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2006
- 5. Comparison Graph Circuit Simulation Result 2 Measurement Simulation 1.6 DRAIN CURRENT ID (A) 1.2 0.8 0.4 0 0 1 2 3 4 5 GATE-SOURCE VOLTAGE VGS (V) Simulation Result VGS(V) ID(A) Error (%) Measurement Simulation 0.1 2.2000 2.1980 -0.0909 0.4 2.5200 2.5340 0.5556 0.8 2.8000 2.8138 0.4929 1.2 3.0000 3.0295 0.9833 1.6 3.2000 3.2122 0.3813 2 3.4000 3.4278 0.8176 All Rights Reserved Copyright (C) Bee Technologies Inc. 2006
- 6. Rds(on) Characteristic Circuit Simulation result 500mA 450mA 400mA 350mA 300mA 250mA 200mA 150mA 100mA 50mA 0A 0V 50mV 100mV 200mV 300mV 400mV 500mV I(Vsense) V_VDS Evaluation circuit Vsense U1 2SK2963 VDS VGS 10Vdc 0 Simulation Result ID=0.5A, VGS=10V Measurement Simulation Error (%) R DS (on) 0.500 0.5000 0.000 All Rights Reserved Copyright (C) Bee Technologies Inc. 2006
- 7. Gate Charge Characteristic Circuit Simulation result 16V 14V 12V 10V 8V 6V 4V 2V 0V 0 1.0n 2.0n 3.0n 4.0n 5.0n 6.0n 7.0n 8.0n V(W1:3) Time*1mA Evaluation circuit Vsense U1 2SK2963 I1 D1 Dbreak 1Adc W1 + - I2 TD = 0 W VD ION = 0A 80Vdc IOFF = 1mA 0 Simulation Result VDD=80V, Measurement Simulation Error (%) ID=1A Qgs 0.9950 nC 0.9960 nC 0.1005 Qgd 2.8000 nC 2.8010 nC 0.0357 All Rights Reserved Copyright (C) Bee Technologies Inc. 2006
- 8. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 1 65.0000 64.9020 -0.1508 2 50.0000 50.2170 0.4340 5 35.0000 34.6660 -0.9543 10 26.0000 25.9100 -0.3462 20 19.0000 19.2520 1.3263 50 12.5000 12.9170 3.3360 100 10.0000 9.6640 -3.3600 All Rights Reserved Copyright (C) Bee Technologies Inc. 2006
- 9. Switching Time Characteristic Circuit Simulation result 12V 11V 10V 9V 8V 7V 6V 5V 4V 3V 2V 1V 0V -1V -2V 0.85us 0.90us 0.95us 1.00us 1.05us 1.10us 1.15us V(L3:1) V(L2:2)/5 Time Evaluation circuit Vsense RL 3 50 U1 2SK2963 V1 = 0 V2 = 20 R2 L3 2 TD = 1u VD 30nH 50Vdc TR = 10n V1 50 R1 TF = 10n 50 PW = 10u PER = 10m 0 Simulation Result ID=1A, VDD= 80V, Measurement Simulation Error(%) VGS=0/10V Td(on) 13.000 ns 13.071 ns 0.5462 All Rights Reserved Copyright (C) Bee Technologies Inc. 2006
- 10. Output Characteristic Circuit Simulation result 1.0A 5.0V 4.0V 3.0V 6.0V 2.8V 0.8A 8.0V 10V 0.6A 2.6V 0.4A 2.4 V 0.2A VGS= 2.0V 2.2V 0A 0V 0.4V 0.8V 1.2V 1.6V 2.0V I(Vsense) V_VDS Evaluation circuit Vsense U1 2SK2963 VDS VGS 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2006
- 11. BODY DIODE SPICE MODEL Forward Current Characteristic Circuit Simulation Result 3.0A 1.0A 100mA 40mA 500mV 1.0V I(R1) V_V1 Evaluation Circuit R1 0.01m U1 2SK2963 V1 0Vdc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2006
- 12. Comparison Graph Circuit Simulation Result 10 Measurement Simulation DRAIN REVERSE CURRENT IDR (A) 1 0.1 0.01 0.5 0.7 0.9 SOURCE-DRAIN VOLTAGE VSD (V) Simulation Result VSD(V) IDR(A) %Error Measurement Simulation 0.04 0.6700 0.6742 0.6203 0.05 0.6850 0.6844 -0.0835 0.1 0.7180 0.7209 0.4040 0.2 0.7700 0.7660 -0.5182 0.5 0.8400 0.8416 0.1848 1 0.9200 0.9196 -0.0418 All Rights Reserved Copyright (C) Bee Technologies Inc. 2006
- 13. Reverse Recovery Characteristic (Body Diode) Circuit Simulation Result 400mA 200mA 0A -200mA -400mA 0.8us 1.0us 1.2us 1.4us 1.6us 1.8us I(R1) Time Evaluation Circuit R1 50 U1 2SK2963 V1 = -9.3V V2 = 10.8V TD = 150n TR = 6ns V1 TF = 5.7ns PW = 1us PER = 50us 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) trj 86.000 ns 86.062 ns 0.0720 All Rights Reserved Copyright (C) Bee Technologies Inc. 2006
- 14. Reverse Recovery Characteristic (Body Diode) Reference Trj= (86ns) Trb= (64ns) Conditions:Ifwd=0.2,lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (C) Bee Technologies Inc. 2006
- 15. Zener Voltage Characteristic Circuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 5V 10V 15V 20V 25V 30V 35V 40V 45V I(R1) V_V1 Evaluation Circuit U1 2SK2963 R1 0.01m IOPEN 0Adc V1 0Vdc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2006
- 16. Zener Voltage Characteristic Reference All Rights Reserved Copyright (C) Bee Technologies Inc. 2006