SPICE MODEL of TPC6107 (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
Beyond Boundaries: Leveraging No-Code Solutions for Industry Innovation
SPICE MODEL of TPC6107 (Professional+BDP Model) in SPICE PARK
1. Device Modeling Report
COMPONENTS: Power MOSFET (Professional)
PART NUMBER: TPC6107
MANUFACTURER: TOSHIBA
REMARK: P Channel Model
Body Diode (Professional) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
2. MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
3. Transconductance Characteristic
Circuit Simulation Result
16.00
Measurement
Simulation
14.00
12.00
10.00
GFS (s)
8.00
6.00
4.00
2.00
0.00
0.00 2.00 4.00 6.00
DRAIN CURRENT - ID (A)
Comparison table
gfs
Id(A) Error(%)
Measurement Simulation
-0.100 2.000 1.904 -4.800
-0.200 2.500 2.672 6.880
-0.500 4.200 4.163 -0.881
-1.000 5.800 5.787 -0.224
-2.000 7.900 7.830 -0.886
-5.000 12.200 12.057 -1.172
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
4. Vgs-Id Characteristic
Circuit Simulation result
-10A
-5A
0A
0V -1.0V -2.0V -2.5V
I(V3)
V_V1
Evaluation circuit
V3
0Vdc
U5
V2
-10
TPC6107
-3 V1
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
5. Comparison Graph
Circuit Simulation Result
10
9
Measurement
8 Simulation
7
Drain current - ID (A)
6
5
4
3
2
1
0
0.0 0.5 1.0 1.5 2.0 2.5
Gate-source voltage - VGS (V)
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
-0.200 -1.255 -1.239 -1.275
-0.500 -1.350 -1.329 -1.556
-1.000 -1.480 -1.431 -3.311
-2.000 -1.600 -1.579 -1.313
-5.000 -1.870 -1.883 0.695
-10.000 -2.250 -2.243 -0.311
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
9. SwitchingTime Characteristic
Circuit Simulation result
-10V
-9V
-8V
-7V
-6V
-5V
-4V
-3V
-2V
-1V
0V
1.90us 1.95us 2.00us 2.05us 2.10us 2.15us 2.20us
V(2) V(3)/2
Time
Evaluation circuit
3 L1 R2
50nH
4.5
U2
L2 V1
30nH 2 -10
V1 = 0 V2 R4 TPC6107
V2 = -5
TD = 2u 4.7
TR = 4n
TF = 4n
PW = 10u
PER = 30u
0
Simulation Result
ID=-2.2A, VDD=-10V
Measurement Simulation Error(%)
VGS=-5V
ton 16.000 ns 16.113 ns 0.706
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
10. Output Characteristic
Circuit Simulation result
-10A
-2.2 V
-2.3 V
-8A -5.0V
-4.0V
-3.0V
-2.5V
-2.0 V
-6A
-1.9 V
-4A
-1.8 V
-1.7 V
-2A -1.6 V
VGS=-2.2V
0A
0V -1.0V -2.0V -3.0V -4.0V -5.0V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
U2
V2
V1 TPC6107
0
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
11. Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
100mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
U2
V1
0Vdc
TPC6107
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
14. Reverse Recovery Characteristic Reference
Trj=18.4(ns)
Trb=27.0(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006