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Device Modeling ReportCOMPONENTS: MOSFET (Professional Model)PART NUMBER: 2SK3062MANUFACTURER: NEC CorporationREMARK: Body...
MOSFET MODEL PSpice model                                             Model description   parameterLEVELL                 ...
Transconductance CharacteristicsCircuit Simulation Result                                    40                           ...
Vgs-Id CharacteristicsCircuit Simulation Result    100A      10A    1.0A   100mA    10mA            0V              1.0V  ...
Comparison GraphCircuit Simulation Result                            100                                                Me...
*Rds(on) CharacteristicCircuit Simulation result   35A   30A   25A   20A   15A   10A    5A    0A         0V           44.1...
Gate Charge CharacteristicCircuit Simulation result   16V   14V   12V   10V    8V    6V    4V    2V    0V         0       ...
Capacitance Characteristic                                                        Measurement                             ...
Switching Time CharacteristicCircuit Simulation result   20V   16V   12V    8V    4V    0V   -4V   0.675us      0.825us   ...
Output CharacteristicCircuit Simulation result   250A   225A                                               VGS=10V   200A ...
BODY DIODE SPICE MODELForward Current CharacteristicCircuit Simulation Result    100A     10A    1.0A   100mA    10mA     ...
Comparison GraphCircuit Simulation Result                                        100                                      ...
Reverse Recovery CharacteristicCircuit Simulation Result    400mA    300mA    200mA    100mA     -0mA   -100mA   -200mA   ...
Reverse Recovery Characteristic                                           Reference                                       ...
ESD PROTECTION DIODE SPICE MODELZener Voltage CharacteristicCircuit Simulation Result   10mA    9mA    8mA    7mA    6mA  ...
Zener Voltage Characteristic                                            Reference              Measurement             All...
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SPICE MODEL of 2SK3062 (Professional+BDP Model) in SPICE PARK

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SPICE MODEL of 2SK3062 (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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SPICE MODEL of 2SK3062 (Professional+BDP Model) in SPICE PARK

  1. 1. Device Modeling ReportCOMPONENTS: MOSFET (Professional Model)PART NUMBER: 2SK3062MANUFACTURER: NEC CorporationREMARK: Body Diode (Professional Model) /ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  2. 2. MOSFET MODEL PSpice model Model description parameterLEVELL Channel LengthW Channel WidthKP TransconductanceRS Source Ohmic ResistanceRD Ohmic Drain ResistanceVTO Zero-bias Threshold VoltageRDS Drain-Source Shunt ResistanceTOX Gate Oxide ThicknessCGSO Zero-bias Gate-Source CapacitanceCGDO Zero-bias Gate-Drain CapacitanceCBD Zero-bias Bulk-Drain Junction CapacitanceMJ Bulk Junction Grading CoefficientPB Bulk Junction PotentialFC Bulk Junction Forward-bias Capacitance CoefficientRG Gate Ohmic ResistanceIS Bulk Junction Saturation CurrentN Bulk Junction Emission CoefficientRB Bulk Series ResistancePHI Surface Inversion PotentialGAMMA Body-effect ParameterDELTA Width effect on Threshold VoltageETA Static Feedback on Threshold VoltageTHETA Modility ModulationKAPPA Saturation Field FactorVMAX Maximum Drift Velocity of CarriersXJ Metallurgical Junction DepthUO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  3. 3. Transconductance CharacteristicsCircuit Simulation Result 40 Measurement 35 Simulation 30 TRANSCONDUCTANCE Gfs(s) 25 20 15 10 5 0 0 2 4 6 8 10 DRIAN CURRENT ID (A)Comparison table gfs(s) Id(A) Error(%) Measurement Simulation 0.1 4.000 4.089 2.222 0.2 5.714 5.854 2.450 0.5 8.929 9.070 1.584 1 12.500 12.705 1.640 2 17.544 17.830 1.631 5 27.624 27.888 0.955 10 38.462 38.756 0.766 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  4. 4. Vgs-Id CharacteristicsCircuit Simulation Result 100A 10A 1.0A 100mA 10mA 0V 1.0V 2.0V 3.0V 4.0V 5.0V I(V2) V_VGSEvaluation circuit V2 U5 2SK3062 VDS 10Vdc VGS 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  5. 5. Comparison GraphCircuit Simulation Result 100 Measurement Simulation ID - Drain Current -A 10 1 0.1 1 1.5 2 2.5 3 VGS - Gate to Source Voltage - VComparison table VGS(V) ID(A) Error (%) Measurement Simulation 0.1 1.850 1.827 -1.227 0.2 1.880 1.849 -1.665 0.5 1.925 1.891 -1.761 1 1.980 1.939 -2.071 2 2.040 2.007 -1.613 5 2.160 2.143 -0.773 10 2.315 2.298 -0.721 20 2.515 2.521 0.219 50 2.900 2.972 2.469 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  6. 6. *Rds(on) CharacteristicCircuit Simulation result 35A 30A 25A 20A 15A 10A 5A 0A 0V 44.1mV 88.2mV 132.3mV 176.4mV 220.5mV I(V2) V_VDDEvaluation circuit V2 U5 2SK3062 VDD 10Vdc VGS 10Vdc 0Simulation Result ID=35A, VGS=10V Measurement Simulation Error (%) R DS (on) 6.30 m 6.30 m 0.00 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  7. 7. Gate Charge CharacteristicCircuit Simulation result 16V 14V 12V 10V 8V 6V 4V 2V 0V 0 25n 50n 75n 100n V(W1:3) Time*1mAEvaluation circuit Vsense U1 2SK3062 I1 D1 Dbreak 70Adc W1 + - I2 W VDD ION = 0A 48Vdc IOFF = 1mA 0Simulation Result VDD=48V,ID=70A Measurement Simulation Error (%) ,VGS=10V Qgs nC 13.000 13.029 0.223 Qgd nC 30.000 29.993 -0.023 Qg nC 95.000 94.593 -0.428 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  8. 8. Capacitance Characteristic Measurement SimulationSimulation Result Cbd (pF) VDS(V) Error(%) Measurement Simulation 0.1 2.450 2.430 -0.816 0.2 2.380 2.360 -0.840 0.5 2.220 2.240 0.901 1 2.000 1.980 -1.000 2 1.700 1.680 -1.176 5 1.250 1.230 -1.600 10 0.900 0.910 1.111 20 0.650 0.630 -3.077 50 0.390 0.400 2.564 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  9. 9. Switching Time CharacteristicCircuit Simulation result 20V 16V 12V 8V 4V 0V -4V 0.675us 0.825us 0.975us 1.125us 1.275us 1.420us V(L3:2) V(Vsense:+)/3 TimeEvaluation circuit Vsense RL 1.16 V1 = 0 R1 L3 V2 = 20 U1 TD = 1u 10 30nH 2SK3062_PRO VDD TR = 20n V1 30Vdc R2 TF = 20n 10 PW = 10u PER = 20u 0Simulation Result ID=35A, VDD=30V Measurement Simulation Error(%) VGS=0/10V td (on) ns 75.00 84.91 -0.120 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  10. 10. Output CharacteristicCircuit Simulation result 250A 225A VGS=10V 200A VGS =10V VGS=4.0V 175A 150A 125A 100A 75A 50A 25A 0A 0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V I(V2) V_VDSEvaluation circuit V2 U5 2SK3062 VDS 10Vdc VGS 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  11. 11. BODY DIODE SPICE MODELForward Current CharacteristicCircuit Simulation Result 100A 10A 1.0A 100mA 10mA 0V 0.5V 1.0V 1.5V 2.0V I(V2) V_VGSEvaluation Circuit V2 U1 2SK3062 VGS 10Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  12. 12. Comparison GraphCircuit Simulation Result 100 Measurement Simulation ISD - Diode Forward Current - A 10 1 0.1 0.4 0.6 0.8 1 1.2 VSD - Source to Drain Voltage - VSimulation Result VDS(V) IDR(A) Measurement Simulation %Error 0.1 0.570 0.573 0.474 0.2 0.590 0.592 0.271 0.5 0.620 0.617 -0.484 1 0.640 0.638 -0.375 2 0.660 0.660 0.045 5 0.700 0.697 -0.429 10 0.740 0.736 -0.500 20 0.800 0.796 -0.450 50 0.930 0.946 1.720 100 1.180 1.173 -0.576 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  13. 13. Reverse Recovery CharacteristicCircuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 5.5us 5.7us 5.9us 6.1us 6.3us 6.5us I(R1) TimeEvaluation Circuit R1 50 V1 = -9.5V V2 = 10.5 U1 TD = 80n V1 D2SK3062_PRO TR = 10n TF = 10n PW = 5.7us PER = 100us 0Compare Measurement vs. Simulation Measurement Simulation Error (%) trj ns 46.00 45.91 -0.20 trb ns 162.00 161.53 -0.29 trr ns 208.00 207.44 -0.27 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  14. 14. Reverse Recovery Characteristic Reference MeasurementTrj=46.00(ns)Trb=162.00(ns)Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  15. 15. ESD PROTECTION DIODE SPICE MODELZener Voltage CharacteristicCircuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V I(V2) V_VGSEvaluation Circuit V2 U3 2SK3062 ID 0Adc VGS 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  16. 16. Zener Voltage Characteristic Reference Measurement All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

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