SPICE MODEL of SSM3K16FV (Professional+BDP Model) in SPICE PARK
•
0 likes•197 views
SPICE MODEL of SSM3K16FV (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
Recommended
Recommended
More Related Content
What's hot
What's hot (20)
Similar to SPICE MODEL of SSM3K16FV (Professional+BDP Model) in SPICE PARK
Similar to SPICE MODEL of SSM3K16FV (Professional+BDP Model) in SPICE PARK (20)
More from Tsuyoshi Horigome
More from Tsuyoshi Horigome (20)
Recently uploaded
Recently uploaded (20)
SPICE MODEL of SSM3K16FV (Professional+BDP Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Professional) PART NUMBER: SSM3K16FV MANUFACTURER: TOSHIBA Body Diode (Professional) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 2. Circuit Configuration Equivalent Circuit D S1 - - + + R2 S R1 10MEG DGD 10M CGD S2 + + - - Q1 S G S All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 3. MOSFET MODEL PSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 4. Transconductance Characteristic Circuit Simulation Result 0.25 0.2 gfs 0.15 0.1 Measurement Simulation 0.05 0.01 0.03 0.05 0.07 0.09 0.11 ID - Drain Current - A Comparison table gfs Id(A) Error(%) Measurement Simulation 0.010 0.080 0.083 3.750 0.020 0.100 0.105 5.000 0.050 0.175 0.179 2.286 0.1 0.245 0.25 2.041 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 5. Vgs-Id Characteristic Circuit Simulation result 1.0A 100mA 10mA 1.0mA 0.1V 1.0V 2.0V 3.0V I(V3) V_V2 Evaluation circuit V3 0Vdc U28 SSM3K16FV Vv ariable 3Vdc 3Vdc V2 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 6. Comparison Graph Circuit Simulation Result Measurement Simulation 0.081 ID - Drain Current - A 0.061 0.041 0.021 0.001 0 0.5 1 1.5 2 2.5 3 VGS - Gate to Source Voltage - V Simulation Result VGS(V) ID(A) Error (%) Measurement Simulation 0.001 1.040 1.043 0.288 0.002 1.070 1.074 0.374 0.005 1.120 1.13 0.893 0.01 1.200 1.202 0.167 0.02 1.270 1.295 1.969 0.05 1.450 1.49 2.759 0.1 1.700 1.705 0.294 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 7. Rds(on) Characteristic Circuit Simulation result 10mA 8mA 6mA 4mA 2mA 0A 0V 5mV 10mV 15mV 20mV I(V3) V_VDS Evaluation circuit V3 0Vdc U28 SSM3K16FV VDS 4Vdc 0Vdc VGS 0 Simulation Result ID=10mA, VGS=10V Measurement Simulation Error (%) R DS (on) 1.5 1.5 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 8. Gate Charge Characteristic Circuit Simulation result 10V 8V 6V 4V 2V 0V 0 0.2n 0.4n 0.6n 0.8n 1.0n 1.2n 1.4n 1.6n 1.8n 2.0n V(W1:3) Time*1mS Evaluation circuit V2 0Vdc U32 Dbreak SSM3K16FV D1 PER = 1000u I2 PW = 600u W1 0.6Adc TF = 10n + TR = 10n TD = 0 - I2 = 1m W I1 IOFF = 1mA V1 I1 = 0 ION = 0uA 17Vdc 0 Simulation Result VDD=17V,ID=0.6A Measurement Simulation Error (%) ,VGS=10V Qgs(nC) 0.1 0.1 0 Qgd(nC) 0.3 0.3 0 Qg 1.9 1.935 1.842 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 9. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 0.1 7.5 7.520 0.267 0.2 7.1 7.170 0.986 0.5 6.5 6.740 3.692 1 6 6.040 0.667 2 5.3 5.340 0.755 5 4.5 4.470 -0.667 10 3.8 3.870 1.842 20 3.4 3.350 -1.471 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 10. Switching Time Characteristic Circuit Simulation result 12V 10V 8V 6V 4V 2V 0V 1.000us 1.050us 1.100us 1.150us 1.200us 1.250us 1.300us V(L1:2)*4 V(L2:1)*3.333 Time Evaluation circuit L2 R2 50nH 1k U31 SSM3K16FV R1 L1 V1 30nH V1 = 0 50 V2 = 5 V2 3Vdc TD = 1u R3 TR = 4n TF = 4n 50 PW = 10u PER = 200u 0 Simulation Result ID=10m A, VDD=3V Measurement Simulation Error(%) VGS=0/2.5V Ton(ns) 70.000 70.404 0.577 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 11. Output Characteristic Circuit Simulation result 250mA 10V 2.5V 2.1V 200mA 1.9V 150mA 1.7.V 100mA 1.5V 50mA VGS=1.3V 0A 0V 0.5V 1.0V 1.5V 2.0V I(Vdsense) V_Vvariable Evaluation circuit Vdsense 0Vdc U30 SSM3K16FV Vv ariable 10Vdc 10Vdc Vstep 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 12. Forward Current Characteristic Circuit Simulation Result 100mA 10mA 1.0mA 0V 0.5V 1.0V 1.5V 2.0V I(R1) V_V1 Evaluation Circuit R1 0.01m U27 V1 0Vdc SSM3K16FV 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 13. Comparison Graph Circuit Simulation Result 0.1 Measurement Simulation Drain reverse current IDR(A) 0.01 0.001 0 0.5 1 1.5 2 Source-Drain voltage -VSD(V) Simulation Result VSD(V) IDR(A) Measuremen Simulation %Error 0.001 0.58 0.578 -0.345 0.025 0.7 0.709 1.286 0.050 0.76 0.753 -0.921 0.075 0.8 0.788 -1.500 0.100 0.82 0.819 -0.122 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 14. Reverse Recovery Characteristic Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 5.12us 5.20us 5.28us 5.36us 5.44us 5.52us I(R1) Time Evaluation Circuit R1 50 V1 = -9.4v V1 V2 = 10.85v U29 TD = 245n TR = 10ns D3K16FV TF = 19ns PW = 5us PER = 100us 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) Trj(ns) 23.2 23.178 -0.095 Trb(ns) 31.2 31.385 0.593 Trr(ns) 54.4 54.563 0.300 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 15. Reverse Recovery Characteristic Reference Trj=23.200(ns) Trb=31.200(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 16. Zener Voltage Characteristic Circuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V I(R1) V_V1 Evaluation Circuit R1 0.01m U28 V1 0Vdc R2 100MEG SSM3K16FV 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 17. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2007