SPICE MODEL of 2SK3111 (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Professional)
PART NUMBER: 2SK3111
MANUFACTURER: NEC
Body Diode (Professional) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

2. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

3. Transconductance Characteristic
Circuit Simulation Result
Comparison table
gfs
Id(A) Error (%)
Measurement Simulation
0.1 0.800 0.833 4.125
0.2 1.143 1.176 2.887
0.5 1.887 1.852 -1.855
1 2.632 2.597 -1.330
2 3.636 3.630 -0.165
5 5.747 5.618 -2.245
10 8.475 8.333 -1.676
20 11.111 10.644 -4.203
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

4. Vgs-Id Characteristic
Circuit Simulation result
10A
1.0A
100mA
10mA
0V 5V 10V
I(V3)
V_V1
Evaluation circuit
V3
0Vdc
U2
V2
V1 2SK3111 10
7
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

5. Comparison Graph
Circuit Simulation Result
Comparison table
VGS(V)
ID(A) Error (%)
Measurement Simulation
0.01 4.18 4.371 4.560
0.02 4.25 4.403 3.600
0.05 4.35 4.466 2.667
0.1 4.5 4.538 0.844
0.2 4.6 4.639 0.848
0.5 4.8 4.842 0.875
1 5.1 5.073 -0.529
2 5.45 5.401 -0.899
5 6 6.063 1.050
10 6.75 6.826 1.126
20 8 7.933 -0.838
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

6. Rds(on) Characteristic
Circuit Simulation result
10A
5A
0A
0V 0.5V 1.0V 1.5V 2.0V
I(V2)
V_V3
Evaluation circuit
V2
0Vdc
U1
V3
V1 2SK3111 0Vdc
10
0
Comparison table
ID=10A, VGS=10V Measurement Simulation Error (%)
R DS (on)  0.12 0.12 0-0.058
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

7. Gate Charge Characteristic
Circuit Simulation result
12V
8V
4V
0V
0 20n 40n 60n
V(W1:3)
Time*1mA
Evaluation circuit
RON = 1.0
ROFF = 1e6
ION = 0 U4
IOFF = 1m
W1
+ I2
-
20
W D1
2SK3111
I1 Dbreak
I1 = 0 V1
I2 = 1m
TD = 0
TR = 10n 160
TF = 10n
PW = 200u
PER = 500u
0
Comparison table
VDD=160V,ID=20A,VG=10V Measurement Simulation Error (%)
Qgs (nC) 7 7.0792 1.131
Qgd (nC) 25 24.926 -0.296
Qg (nC) 40 40 0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

8. Capacitance Characteristic
Measurement
Simulation
Comparison table
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
0.1 500 499 -0.200
0.5 420 425 1.190
1 360 356 -1.111
2 270 269 -0.370
5 150 154 2.667
10 90 89 -1.111
20 50 48 -4.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

9. Switching Time Characteristic
Circuit Simulation result
12V
10V
0V
1.80us 2.00us 2.25us 2.50us
V(VOUT)/10 V(U4:1)
Time
Evaluation circuit
VOUT L3 RL
50nH 10
U4
R1
L4
10 30nH
V1 = 0 VD
V2 = 20 V1 100
TD = 2u R2 2SK3111
TR = 6n
TF = 7n 10
PW = 10u
PER = 20u
0 0
Comparison table
ID=10A, VDD=100V,
Measurement Simulation Error(%)
VGS=0V~10V
ton (ns) 25 25.237 0.948
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

10. Output Characteristic
Circuit Simulation result
20A
10
18A
9
6.8 16A 8
14A
12A 7
10A
8A
6A
VGS=6 V
4A
2A
0A
0V 2V 4V 6V 8V 10V 12V 14V 16V 18V 20V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
U1
V2
V1
2SK3111
30
10
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

11. Output Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

12. Forward Current Characteristic
Circuit Simulation Result
10A
1.0A
100mA
0V 0.5V 1.0V 1.5V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
U1
V1
0Vdc
2SK3111
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

13. Comparison Graph
Circuit Simulation Result
Comparison table
VSD(V)
ISD(A) Measurement Simulation %Error
0.1 0.67 0.668 -0.299
0.2 0.69 0.691 0.145
0.5 0.72 0.724 0.556
1 0.755 0.752 -0.397
2 0.785 0.785 0
5 0.85 0.85 0
10 0.93 0.930 0
20 1.067 1.067 0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

14. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
200mA
0A
-200mA
-400mA
13.6us 14.4us 15.2us 16.0us 16.8us 17.6us
I(RL)
Time
Evaluation Circuit
RL
50
U1
V1 = -9.32 V1 D3111_PRO
V2 = 10.742
TD = 0
TR = 10n
TF = 10n
PW = 15u
PER = 100u
0
Comparison table
Measurement Simulation Error (%)
trj (ns) 440 441.886 0.429
trb (ns) 240 241.949 0.812
trr (ns) 680 683.835 0.564
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

15. Reverse Recovery Characteristic Reference
Trj=440(ns)
Trb=240(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

16. ESD PROTECTION DIODE
Zener Voltage Characteristic
Circuit Simulation Result
10mA
5mA
0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1
Evaluation Circuit
R1
U1
0.01m
2SK3111
R2
V1
0Vdc 1G
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

17. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007