SPICE MODEL of 2SK3108 (Professional+BDP Model) in SPICE PARK
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SPICE MODEL of 2SK3108 (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of 2SK3108 (Professional+BDP Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Professional Model) PART NUMBER: 2SK3108 MANUFACTURER: NEC Body Diode (Professional Model) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 2. MOSFET MODEL PSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 3. Transconductance Characteristic Circuit Simulation Result 5 Measurement Simulation 4 TRANSCONDUCTANCE Gfs(s) 3 2 1 0 0 2 4 6 8 10 DRIAN CURRENT ID (A) Comparison table gfs Id(A) Error (%) Measurement Simulation 0.1 0.478 0.495 3.455 0.2 0.685 0.715 4.390 0.5 1.085 1.120 3.264 1 1.534 1.534 0.000 2 2.179 2.172 -0.337 5 3.425 3.400 -0.720 10 4.840 4.900 1.234 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 4. Vgs-Id Characteristic Circuit Simulation result 10A 1.0A 100mA 10mA 0V 1V 2V 3V 4V 5V 6V 7V 8V 9V 10V I(V2) V_VGS Evaluation circuit V2 U2 VDS 10Vdc 2SK3108 VGS 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 5. Comparison Graph Circuit Simulation Result 10 Measurement Simulation ID - Drain Current -A 1 0.1 0.01 0 2 4 6 8 10 VGS - Gate to Source Voltage - V Comparison table VGS(V) ID(A) Error (%) Measurement Simulation 0.01 4.050 4.111 1.499 0.02 4.150 4.166 0.386 0.05 4.400 4.276 -2.820 0.1 4.550 4.400 -3.305 0.2 4.800 4.575 -4.694 0.5 5.100 4.922 -3.488 1 5.350 5.314 -0.680 2 5.850 5.868 0.299 5 7.000 6.966 -0.480 10 8.300 8.206 -1.139 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 6. Rds(on) Characteristic Circuit Simulation result 4.0A 3.2A 2.4A 1.6A 0.8A 0A 0V 0.256V 0.512V 0.768V 1.024V 1.280V I(V2) V_VDS Evaluation circuit V2 U2 2SK3108 VDS VGS 10Vdc 10Vdc 0 Comparison table ID=4.0A, VGS=10V Measurement Simulation Error (%) R DS (on) 0.32 0.32 0.00 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 7. Gate Charge Characteristic Circuit Simulation result 16V 14V 12V 10V 8V 6V 4V 2V 0V 0 5n 10n 15n 20n V(W1:3) Time*1mA Evaluation circuit Vsense I1 U1 D1 W1 2SK3108 Dbreak 8.0Adc + TD = 0 - I2 ION = 0A W IOFF = 1mA VD 160Vdc 0 Comparison table VDD=160V,ID=8A, Measurement Simulation Error (%) VGS=10V Qgs nC 3.50 3.49 -0.29 Qgd nC 10.00 10.05 0.50 Qg nC 18.00 17.98 -0.11 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 8. Capacitance Characteristic Measurement Simulation Comparison table Cbd(pF) VDS(V) Error(%) Measurement Simulation 1 270 265 -1.852 2 160 168 4.375 5 95 93 -2.105 10 55 56 1.818 20 37 35 -4.054 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 9. Switching Time Characteristic Circuit Simulation result 20V 16V 12V 8V 4V 0V -4V -8V 0.94us 0.96us 0.98us 1.00us 1.02us 1.04us 1.06us 1.08us V(U1:D)/10 V(U1:G) Time Evaluation circuit Vsense RL 25 L3 U1 2SK3108 V1 = 0 VDD V2 = 10 V1 100Vdc TD = 1u R1 TR = 20n TF = 20n 10 PW = 10u PER = 20u 0 Comparison table ID=4.0A, VDD=100V, Measurement Simulation Error(%) VGS=0V~10V ton ns 12.00 12.42 3.48 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 10. Output Characteristic Circuit Simulation result 10A 10V 9V 8V 9A 8A 7A 6A 7V 5A 4A 3A VGS=6 V 2A 1A 0A 0V 2V 4V 6V 8V 10V 12V 14V 16V 18V 20V I(V2) V_VDS Evaluation circuit V2 U1 2SK3108 VDS 10Vdc VGS 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 11. Output Characteristic Reference Measurement All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 12. BODY DIODE Forward Current Characteristic Circuit Simulation Result 10A 1.0A 100mA 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V I(R1) V_V1 Evaluation Circuit R1 0.01m U1 2SK3108 V1 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 13. Comparison Graph Circuit Simulation Result 10 Measurement Simulation Diode Forward Current - A 1 0.1 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 Source to Drain Voltage - V Comparison table VSD(V) ISD(A) Measurement Simulation %Error 0.1 0.700 0.700 -0.043 0.2 0.720 0.720 -0.056 0.5 0.750 0.752 0.267 1 0.790 0.786 -0.506 2 0.830 0.833 0.361 5 0.930 0.928 -0.215 10 1.050 1.051 0.095 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 14. Reverse Recovery Characteristic Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 4.4us 4.8us 5.6us 6.4us 6.8us 7.6us 8.4us I(R1) Time Evaluation Circuit R1 50 U1 D3108_PRO V1 = -9.4V V1 V2 = 10.7V TD = 100n TR = 10ns TF = 10ns PW = 5.7us PER = 100us 0 Comparison table Measurement Simulation Error (%) trj ns 342.00 346.34 1.27 trb ns 238.00 238.18 0.08 trr ns 580.00 584.52 0.78 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 15. Reverse Recovery Characteristic Reference Measurement Trj=342(ns) Trb=238(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 16. ESD PROTECTION DIODE Zener Voltage Characteristic Circuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V I(R1) V_V1 Evaluation Circuit R1 0.01m open open U1 2SK3108 V1 0Vdc Ropen 100MEG 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 17. Zener Voltage Characteristic Reference Measurement All Rights Reserved Copyright (c) Bee Technologies Inc. 2007