SPICE MODEL of 2SK2610 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Model Parameters)
PART NUMBER: 2SK2610
MANUFACTURER: TOSHIBA
Body Diode (Model Parameters) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

2. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

3. Transconductance Characteristic
Circuit Simulation Result
5
4
3
gfs
2
1
Measurement
Simulation
0
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1
ID(A)
Comparison table
gfs
Id(A) Error(%)
Measurement Simulation
0.1 0.830 0.833 0.361
0.2 1.150 1.176 2.261
0.5 1.740 1.786 2.644
1 2.450 2.500 2.041
2 3.500 3.571 2.029
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

4. Vgs-Id Characteristic
Circuit Simulation result
6.0A
4.0A
2.0A
0A
0V 2V 4V 6V 8V 10V 12V
I(V3)
V_V2
Evaluation circuit
V3
U29 0Vdc
Vv ariable
20Vdc
10Vdc
2SK2610
V2
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

5. Comparison Graph
Circuit Simulation Result
Measurement
1.9
Simulation
1.7
1.5
ID - Drain Current - A
1.3
1.1
0.9
0.7
0.5
0.3
0.1
0 1 2 3 4 5 6 7 8 9 10
VGS - Gate to Source Voltage - V
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
0.1 4.000 3.971 -0.725
0.2 4.100 4.075 -0.610
0.5 4.300 4.282 -0.419
1 4.550 4.518 -0.703
2 4.900 4.855 -0.918
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

6. Rds(on) Characteristic
Circuit Simulation result
4.0A
3.5A
3.0A
2.5A
2.0A
1.5A
1.0A
0.5A
0A
0V 2V 4V 6V 8V 10V 12V 14V
I(V3)
V_VDS
Evaluation circuit
V3
U29 0Vdc
VDS
10Vdc
0Vdc
2SK2610
VGS
0
Simulation Result
ID=3A, VGS=10V Measurement Simulation Error (%)
R DS (on) 2.300  2.300  0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

7. Gate Charge Characteristic
Circuit Simulation result
20V
16V
12V
8V
4V
0V
0 10n 20n 30n 40n 50n 60n
V(W1:3)
Time*1mS
Evaluation circuit
V2
U29 0Vdc
Dbreak
PER = 1000u
PW = 600u W1
TF = 10n +
TR = 10n D1 I2
TD = 0
- 5Adc
2SK2610
I2 = 1m W
I1 IOFF = 1mA
I1 = 0 ION = 0uA
V1
400Vdc
0
Simulation Result
VDD=400V,ID=5A
Measurement Simulation Error (%)
,VGS=10V
Qgs(nC) 7.000 7.066 0.943
Qgd(nC) 20.000 20.081 0.405
Qg 42.000 34.502 -17.852
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
0.1 900 904 0.444
0.2 840 842 0.238
0.5 720 721 0.139
1 600 601 0.167
2 480 483 0.625
5 350 350 0.000
10 260 261 0.385
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

9. Switching Time Characteristic
Circuit Simulation result
14V
12V
10V
8V
6V
4V
2V
0V
0.8us 0.9us 1.0us 1.1us 1.2us 1.3us 1.4us 1.5us
V(L2:1)/20 V(L1:2)
Time
Evaluation circuit
L2 R2
50nH
U32 66.7
L1
30nH
V1 = 0 V1
V2 = 10 V2 200Vdc
TD = 1u R3
2SK2610
TR = 100n
50
TF = 100n
PW = 10u
PER = 200u
0
Simulation Result
ID=3A, VDD=200V
Measurement Simulation Error(%)
VGS=0/10V
Ton(ns) 90.000 90.462 0.513
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

10. Output Characteristic
Circuit Simulation result
10A
6
8A
5.75
6A
5.5
5.25
4A
5
2A 4.75
VGS=4.25V
0A
0V 10V 20V 30V 40V 50V
I(Vdsense)
V_Vvariable
Evaluation circuit
Vdsense
0Vdc
U32
Vv ariable
10Vdc
2SK2610 10Vdc
Vstep
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

11. BODY DIODE
Forward Current Characteristic
Circuit Simulation Result
30A
10A
1.0A
100mA
10mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(R1)
V_V1
Evaluation Circuit
R1
2SK2610
0.01m
V1
0Vdc
U29
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

12. Comparison Graph
Circuit Simulation Result
100
Measurement
Simulation
10
Drain reverse current IDR(A)
1
0.1
0.01
0.000 0.200 0.400 0.600 0.800 1.000 1.200
Source-Drain voltage VSD(V)
Simulation Result
VSD(V)
IDR(A) Measuremen Simulation %Error
0.01 0.560 0.568 1.429
0.02 0.595 0.590 -0.840
0.05 0.620 0.618 -0.323
0.1 0.635 0.639 0.630
0.2 0.660 0.662 0.303
0.5 0.700 0.697 -0.429
1 0.730 0.728 -0.274
2 0.770 0.770 0.000
5 0.850 0.860 1.176
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
4us 6us 8us 10us 12us 14us 16us 18us 20us 22us
I(R1)
Time
Evaluation Circuit
R1
50
2SK2610
V1 = -9.4v V1
V2 = 10.65v
TD = 1.5u
TR = 10ns
TF = 13ns U35
PW = 7us
PER = 100us
0
Compare Measurement vs. Simulation
Trr Measurement Simulation Error (%)
Trj+Trb(us) 4.620 4.635 0.325
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

14. Reverse Recovery Characteristic Reference
Trj=2.340 (us)
Trb=2.280(us)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

15. ESD PROTECTION DIODE
Zener Voltage Characteristic
Circuit Simulation Result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V 10V 20V 30V 40V 50V 60V 70V 80V 90V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1
0Vdc
R2
U31
100MEG
2SK2610
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

16. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006