SPICE MODEL of SSM3K123TU (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Model Parameter)
PART NUMBER: SSM3K123TU
MANUFACTURER: TOSHIBA
Body Diode (Model Parameter) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

2. Circuit Configuration
MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

3. Transconductance Characteristic
Circuit Simulation Result
20
Measurement
18 Simulation
16
14
12
gfs
10
8
6
4
2
0
0.0 0.4 0.8 1.2 1.6 2.0
ID : Drain Current A
Comparison table
gfs
Id(A) Error(%)
Measurement Simulation
0.010 0.980 1.000 2.041
0.020 1.158 1.176 1.554
0.050 2.462 2.500 1.543
0.100 2.845 2.941 3.374
0.200 3.852 4.000 3.842
0.500 6.244 6.410 2.659
1.000 8.625 8.746 1.406
2.000 14.644 14.925 1.919
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

4. Vgs-Id Characteristic
Circuit Simulation result
10A
1.0A
100mA
10mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V 1.8V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
U1
SSM3K123TU
Vv ariable
3Vdc
10Vdc
V2
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

5. Comparison Graph
Circuit Simulation Result
10.00
Measurement
Simulation
1.00
ID : Drain Current A
0.10
0.01
0.0 1.0
VGS : Gate to Source Voltage V
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
0.010 0.760 0.773 1.711
0.020 0.790 0.782 -1.013
0.050 0.820 0.800 -2.439
0.100 0.840 0.820 -2.381
0.200 0.870 0.845 -2.874
0.500 0.940 0.900 -4.255
1.000 1.000 0.965 -3.500
2.000 1.100 1.060 -3.636
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

6. Rds(on) Characteristic
Circuit Simulation result
3.0A
2.5A
2.0A
1.5A
1.0A
0.5A
0A
0V 20mV 40mV 60mV 80mV
I(V3)
V_VDS
Evaluation circuit
V3
0Vdc
U1
SSM3K123TU
VDS
4Vdc 0Vdc
VGS
0
Simulation Result
ID=3A, VGS=4V Measurement Simulation Error (%)
R DS (on) () 0.019 0.019 0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

7. Gate Charge Characteristic
Circuit Simulation result
10V
8V
6V
4V
2V
0V
0 10n 20n 30n 35n
V(W1:3)
Time*1mS
Evaluation circuit
V2
0Vdc
U1
PER = 1000u SSM3K123TU Dbreak
PW = 600u W1
TF = 10n + D1
TR = 10n I2
TD = 0
- 4.2Adc
I2 = 1m W
I1 IOFF = 0.1mA
I1 = 0 ION = 0uA
V1
10Vdc
0
Simulation Result
VDD=10V,ID=4.2A
Measurement Simulation Error (%)
,VGS=4V
Qgs(nc) 1.800 1.810 0.556
Qgd(nc) 3.800 3.840 1.053
Qg(nc) 13.600 10.218 -24.868
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
0.100 80.000 79.000 -1.250
0.200 70.000 69.000 -1.429
0.500 52.000 52.500 0.962
1.000 37.000 37.800 2.162
2.000 25.000 25.500 2.000
5.000 15.000 14.500 -3.333
10.000 10.000 9.900 -1.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

9. Switching Time Characteristic
Circuit Simulation result
16V
14V
12V
10V
8V
6V
4V
2V
0V
1.6us 1.8us 2.0us 2.2us 2.4us 2.6us
V(2)*4 V(3)
Time
Evaluation circuit
3 L2
50n
U1 RL
SSM3K123TU 10
R1 L1 2
V1 = 0 4.7 30nH VDD
V2 = 5 V2 10Vdc
TD = 2u R2
TR = 6n
TF = 7n 4.7
PW = 2u
PER = 10u
0
Simulation Result
ID=1A, VDD=10V
Measurement Simulation Error(%)
VGS=2.5V
Ton(ns) 17.000 17.042 0.247
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

10. Output Characteristic
Circuit Simulation result
10A
4.0V 2.5V 1.8 V 1.5V
9A
8A
7A
6A
5A
VGS= 1.2 V
4A
3A
2A
1A
0A
0V 0.2V 0.4V 0.6V 0.8V 1.0V
I(Vdsense)
V_Vvariable
Evaluation circuit
Vdsense
0Vdc
U1
SSM3K123TU
Vv ariable
10Vdc
0Vdc
Vstep
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

11. BODY DIODE SPICE MODEL
Forward Current Characteristic
Circuit Simulation Result
10A
1.0A
100mA
10mA
0V 0.4V 0.8V 1.2V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1
0Vdc U1
SSM3K123TU
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

12. Comparison Graph
Circuit Simulation Result
10.00
Measurement
Simulation
Drain reverse current IDR(A)
1.00
0.10
0.01
0 0.2 0.4 0.6 0.8 1 1.2
Source: Drain voltage VSD(V)
Simulation Result
VSD(V) VSD(V)
IDR(A) %Error
Measurement Simulation
0.010 0.550 0.551 0.182
0.020 0.573 0.575 0.349
0.050 0.605 0.607 0.331
0.100 0.630 0.632 0.317
0.200 0.660 0.656 -0.606
0.500 0.690 0.692 0.290
1.000 0.720 0.719 -0.139
2.000 0.750 0.751 0.133
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
200mA
0A
-200mA
-400mA
19.84us 19.92us 20.00us 20.08us 20.16us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.4v V1
V2 = 10.7v
TD = 1n U1
TR = 10ns SSM3K123TU
TF = 9ns
PW = 20us
PER = 100us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
Trj(ns) 12.800 12.860 0.469
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

14. Reverse Recovery Characteristic Reference
Trj= 12.8 (ns)
Trb= 16.0 (ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

15. ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic
Circuit Simulation Result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
U1
V1 SSM3K123TU
0Vdc
R2
100MEG
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

16. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007