SPICE MODEL of TPCP8002 (Standard+BDS Model) in SPICE PARK

Device Modeling Report

COMPONENTS: Power MOSFET (Model Parameters)
PART NUMBER: TPCP8002
MANUFACTURER: TOSHIBA
Body Diode (Model Parameters) / ESD Protection Diode

Bee Technologies Inc.

All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

Circuit Configuration


MOSFET MODEL

PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility


Transconductance Characteristic

Circuit Simulation Result

50

45

40

35
gfs

30

25

20

Measurement
15
Simulation

10
1 2 3 4 5 6 7 8 9 10
ID - Drain Current - A
Comparison table

gfs
Id(A) Error(%)
Measurement Simulation
0.1 5.000 5.000 0.000
0.2 6.500 6.667 2.569
0.5 10.000 10.000 0.000
1 16.500 16.667 1.012
2 22.500 22.500 0.000
5 35.500 35.714 0.603
10 45.000 45.455 1.011


Vgs-Id Characteristic

Circuit Simulation result
20A

16A

12A

8A

4A

0A
0V 0.4V 0.8V 1.2V 1.6V 2.0V 2.4V
I(V3)
V_V2

Evaluation circuit

U26

V3

0Vdc

TPCP8002 V1
V2
0Vdc 10Vdc

0


Comparison Graph


Measurement
Simulation

8.10
ID - Drain Current - A

6.10

4.10

2.10

0.10
0.0 0.4 0.8 1.2 1.6 2.0 2.4
VGS - Gate to Source Voltage - V

Simulation Result

VGS(V)
ID(A) Error (%)
0.1 1.280 1.278 -0.156
0.2 1.300 1.296 -0.308
0.5 1.300 1.331 2.385
1 1.350 1.371 1.556
2 1.400 1.428 2.000
5 1.500 1.54 2.667
10 1.600 1.669 4.313


Rds(on) Characteristic

6.0A

5.0A

4.0A

3.0A

2.0A

1.0A

0A
0V 50mV 100mV
I(V3)
V_VDS
Evaluation circuit

U26

V3

0Vdc
VGS
TPCP8002 VDS

4.5Vdc 0Vdc

0

Simulation Result

ID=4.5A, VGS=4.5V Measurement Simulation Error (%)
R DS (on) 0.007  0.007  0


Gate Charge Characteristic
10V

8V

6V

4V

2V

0V
0 20n 40n 60n
V(W1:3)
Time*1mS
Evaluation circuit

U26 V2

0Vdc
Dbreak

D1
PER = 1000u
PW = 600u W1 I2
TF = 10n + TPCP8002 9.1Adc
TR = 10n
TD = 0
-
I2 = 1m W
I1 IOFF = 100uA V1
I1 = 0 ION = 0uA 16Vdc

0

Simulation Result

VDD=16V,ID=9.1A
Measurement Simulation Error (%)
,VGS=5V
Qgs(nC) 8.000 8.026 0.325
Qgd(nC) 12.000 11.974 -0.217
Qg 48.000 35.921 -25.165


Capacitance Characteristic

Measurement
Simulation

Simulation Result

Cbd(pF)
VDS(V) Error(%)
0.1 300.000 298.000 -0.667
0.2 235.000 235.000 0.000
0.5 140.000 141.000 0.714
1 75.000 75.000 0.000
2 40.000 39.000 -2.500
5 15.000 14.000 -6.667
10 10.000 9.800 -2.000


Switching Time Characteristic

12V

10V

8V

6V

4V

2V

0V

0.95us 1.00us 1.05us 1.10us 1.15us 1.20us 1.25us
V(L1:2)*2 V(L2:1)
Time

Evaluation circuit

U26 L2 RL

50nH 2.22

R1 L1

V1 = 0
30nH
V2 = 10 V2 4.7 V1
TD = 1u R2 TPCP8002 10Vdc
TR = 10n
TF = 10n 4.7
PW = 10u
PER = 200u

0

Simulation Result

ID=3.6 A, VDD=15V
Measurement Simulation Error(%)
VGS=0/10V
Ton(ns) 24.000 24.089 0.371


Output Characteristic


20A

16A
1.8

12A
1.7

8A
1.6

4A 1.5

VGS=1.4 V
0A
0V 0.4V 0.8V 1.2V 1.6V 2.0V
I(Vdsense)
V_Vvariable

Evaluation circuit

U26

Vdsense

10Vdc 0Vdc

TPCP8002 Vv ariable

Vstep
10Vdc

0


BODY DIODE SPICE MODEL

Forward Current Characteristic

100A

10A

1.0A

100mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(R1)
V_V1
Evaluation Circuit

R1
0.01m
TPCP8002
V1
0Vdc
U26

0


Comparison Graph

10.00
Measurement
Simulation
Drain reverse current IDR(A)

1.00

0.10
0 0.2 0.4 0.6 0.8 1 1.2

Source-Drain voltage VSD(V)
Simulation Result

VSD(V)
IDR(A) %Error
0.1 0.540 0.539 -0.185
0.2 0.560 0.561 0.179
0.5 0.600 0.594 -1.000
1 0.620 0.626 0.968
2 0.660 0.664 0.606
5 0.740 0.732 -1.081
10 0.800 0.802 0.250


Reverse Recovery Characteristic

400mA

300mA

200mA

100mA

-0mA

-100mA

-200mA

-300mA

-400mA
0.7us 0.8us 0.9us 1.0us 1.1us 1.2us 1.3us 1.4us 1.5us 1.6us
I(R1)
Time
Evaluation Circuit

R1

50

V1 = -9.4v V1 TPCP8002
V2 = 10.6v
TD = 55n
TR = 10ns U24
TF = 25ns
PW = 1us
PER = 100us

0

Compare Measurement vs. Simulation

Measurement Simulation Error (%)
Trr(ns) 123.500 123.778 0.225


Reverse Recovery Characteristic Reference

Trj=21.500ns)
Trb=102.000(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50

Example

Relation between trj and trb


ESD PROTECTION DIODE SPICE MODEL

Zener Voltage Characteristic

10mA

9mA

8mA

7mA

6mA

5mA

4mA

3mA

2mA

1mA

0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1

Evaluation Circuit

U24

R1
TPCP8002
R2
0.01m
100MEG
V1
0Vdc

0


Zener Voltage Characteristic Reference


SPICE MODEL of TPCP8002 (Standard+BDS Model) in SPICE PARK

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