This document summarizes the modeling of components in a power MOSFET device. It includes:
1) SPICE model parameters for the power MOSFET and its body diode.
2) Simulation results showing characteristics like transconductance, capacitance and switching times match measurements.
3) SPICE models for the body diode and ESD protection diode with simulation matching measurements.
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SPICE MODEL of TPCF8103 (Standard+BDS Model) in SPICE PARK
1. Device Modeling Report
COMPONENTS: Power MOSFET (Model Parameters)
PART NUMBER: TPCF8103
MANUFACTURER: TOSHIBA
Body Diode (Model Parameters) / ESD Protection Diode
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15. Reverse Recovery Characteristic Reference
Trj=7.000ns)
Trb=12.000(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
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16. ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic
Circuit Simulation Result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1
Evaluation Circuit
U25
0.01m R1 R2
TPCF8103
100MEG
V1
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006