This document summarizes the modeling of components in a device, including: 1) A power MOSFET model with parameters such as length, width, threshold voltage. 2) Simulation results showing characteristics like transconductance, drain current, and capacitance match measurements. 3) A body diode model with simulation of forward current matching measurements. 4) An ESD protection diode model with zener voltage characteristic simulation shown.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Model Parameter)
PART NUMBER: 2SK3863
MANUFACTURER: TOSHIBA
Body Diode (Model Parameter) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

2. Circuit Configuration
MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

3. Transconductance Characteristic
Circuit Simulation Result
5
Measurement
Simulation
4
3
gfs
2
1
0
0 1 2 3 4 5
ID - Drain Current - A
Comparison table
Id(A) gfs Error(%)
Measurement Simulation
0.100 0.550 0.565 2.727
0.200 0.770 0.798 3.610
0.500 1.200 1.255 4.583
1.000 1.700 1.766 3.876
2.000 2.600 2.479 -4.654
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

4. gs-Id Characteristic
Circuit Simulation result
10A
8A
6A
4A
2A
0A
0V 2V 4V 6V 8V 10V 12V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
U28
2SK3863
Vv ariable
10Vdc
20Vdc
V2
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

5. Comparison Graph
Circuit Simulation Result
7.00
Measurement
Simulation
5.00
ID : Drain Current A
3.00
1.00
0.0 2.0 4.0 6.0 8.0 10.0 12.0
VGS : Gate to Source Voltage V
Simulation Result
ID(A) VGS(V) Error (%)
Measurement Simulation
0.100 4.000 4.053 1.315
0.200 4.100 4.200 2.439
0.500 4.500 4.505 0.109
1.000 4.800 4.842 0.875
2.000 5.200 5.325 2.404
5.000 6.100 6.289 3.098
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

6. Rds(on) Characteristic
Circuit Simulation result
3.0A
2.5A
2.0A
1.5A
1.0A
0.5A
0A
0V 1.0V 2.0V 3.0V 4.0V
I(V3)
V_VDS
Evaluation circuit
V3
U28 0Vdc
2SK3863
VDS
10Vdc
0Vdc
VGS
0
Simulation Result
ID=2.5A, VGS=10V Measurement Simulation Error (%)
R DS (on) () 1.350 1.335 -1.111
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

7. Gate Charge Characteristic
Circuit Simulation result
20V
16V
12V
8V
4V
0V
0 5n 10n 15n 20n 25n
V(W1:3)
Time*1mS
Evaluation circuit
V2
U29 0Vdc
2SK3863
Dbreak
PER = 1000u
PW = 600u W1
TF = 10n + D1
TR = 10n I2
-
TD = 0 5Adc
I2 = 1m W
I1 IOFF = 0.1mA
I1 = 0 ION = 0uA
V1
400Vdc
0
Simulation Result
VDD=400V,ID=5A Measurement Simulation Error (%)
,VGS=10V
Qgs(nc) 3.750 3.7118 -1.019
Qgd(nc) 6.250 5.9825 -4.280
Qg(nc) 16.000 12.292 -23.175
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
VDS(V) Cbd(pF) Error(%)
Measurement Simulation
0.100 650.000 650.000 0.000
0.200 625.000 630.000 0.800
0.500 580.000 575.000 -0.862
1.000 490.000 500.000 2.041
2.000 400.000 390.000 -2.500
5.000 220.000 230.000 4.545
10.000 137.000 137.000 0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

9. Switching Time Characteristic
Circuit Simulation result
15V
10V
5V
0V
1.92us 2.00us 2.10us 2.20us
V(2) V(3)/22.5
Time
Evaluation circuit
3 L2
30n
U18
R1 L1 2 2SK3863
RL
V1 = 0 1.5 30nH 90
V2 = 20 V2
TD = 2u
TR = 6n R2 VDD
TF = 7n 225Vdc
PW = 2u 1.5
PER = 20u
0
Simulation Result
ID=2.5A, VDD=225V Measurement Simulation Error(%)
VGS=10V
Ton(ns) 20.000 19.968 -0.160
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

10. Output Characteristic
Circuit Simulation result
5.0A
10 8
6
4.0A
5.7
3.0A
5.5
2.0A
5.2
5
1.0A
4.7
4.5
VGS=4V
0A
0V 2V 4V 6V 8V 10V
I(Vdsense)
V_Vvariable
Evaluation circuit
Vdsense
0Vdc
U30
2SK3863
Vv ariable
10Vdc
10Vdc
Vstep
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

11. BODY DIODE SPICE MODEL
Forward Current Characteristic
Circuit Simulation Result
10A
1.0A
100mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(R1)
V_V1
Evaluation Circuit
R1
U27
0.01m 2SK3863
V1
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

12. Comparison Graph
Circuit Simulation Result
10.00
Measurement
Simulation
Drain reverse current IDR(A)
1.00
0.10
0 0.2 0.4 0.6 0.8 1 1.2
Source-Drain voltage VSD(V)
Simulation Result
IDR(A) VDS(V) VDS(V) %Error
Measurement Simulation
0.100 0.650 0.649 -0.108
0.200 0.680 0.680 0.015
0.500 0.730 0.728 -0.233
1.000 0.770 0.776 0.714
2.000 0.840 0.838 -0.214
5.000 0.960 0.958 -0.208
10.000 1.100 1.100 0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

13. Reverse Recovery Characteristic
Circuit Simulation Result
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
2us 3us 4us 5us 6us 7us 8us 9us 10us 11us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.4v V1
V2 = 10.7v
TD = 100n
TR = 10ns
TF = 19ns 2SK3863
PW = 5us U31
PER = 100us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
Trj(us) 0.700 0.704 0.571
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

14. Reverse Recovery Characteristic Reference
Trj=0.700(us)
Trb=1.18(us)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

15. ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic
Circuit Simulation Result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V 10V 20V 30V 40V 50V 60V 70V 80V 90V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1
0Vdc
R2
2SK3863
100MEG
U28
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

16. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007