SPICE MODEL of SSM3J13T (Standard+BDS Model) in SPICE PARK

Device Modeling Report

COMPONENTS: Power MOSFET (Standard)
PART NUMBER: SSM3J13T
MANUFACTURER: TOSHIBA
Body Diode (Standard) / ESD Protection Diode

Bee Technologies Inc.

All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

MOSFET MODEL

Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility


Body Diode Model

Pspice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time

Equivalent Circuit


Transconductance Characteristic

Circuit Simulation Result

Measurement
Simulation

Comparison table

gfs
Id(A) Error(%)
Measurement Simulation
-0.2 2.2222 2.3 -3.501
-0.5 3.5 3.6 -2.857
-1 5.1 5.015 1.667
-2 6.9643 6.945 0.277


Vgs-Id Characteristic

Circuit Simulation result

-2.0A

-1.0A

0A
0V -0.5V -1.0V -1.5V -2.0V
I(V3)
V_V1

Evaluation circuit

V3

0Vdc

V2
V1 -3Vdc
10Vdc

0


Comparison Graph


Simulation Result

VGS(V)
ID(A) Error (%)
-0.020 -1.072 -1.1049 -3.069
-0.050 -1.136 -1.1368 -0.070
-0.100 -1.190 -1.1731 1.420
-0.200 -1.254 -1.225 2.313
-0.500 -1.362 -1.3301 2.342
-1.000 -1.474 -1.4520 1.493
-2.000 -1.634 -1.6307 0.202


Id-Rds(on) Characteristic


-5.0A

-4.5A

-4.0A

-3.5A

-3.0A

-2.5A

-2.0A

-1.5A

-1.0A
(-75.000m,-1.5000)
-0.5A

0A
0V -0.1V -0.2V -0.3V -0.4V -0.5V -0.6V -0.7V -0.8V -0.9V
I(V3)
V_V2

Evaluation circuit

V3

0V dc

V2
V1 -3V dc
-4V dc

0

Simulation Result

ID=-1.5A, VGS=-4V Measurement Simulation Error (%)
R DS (on) 50.00 m 50.00 m 0.00


Gate Charge Characteristic


-8.0V

-7.0V

-6.0V

-5.0V

-4.0V

-3.0V

-2.0V

-1.0V

0V
0 2n 4n 6n 8n 10n 12n 14n 16n
V(W1:2)
Time*10ms

Evaluation circuit

V2

0Vdc

D1

I1 = 0 ION = 0uA I2
I1 IOFF = 1mA Dbreak
I2 = 1m W -3Adc
TD = 0 -
TR = 10n +
TF = 10n
PW = 600u W1 V1
PER = 1000u -10Vdc

0

Simulation Result

VDD=-10V,ID=-3A Measurement Simulation Error (%)
,VGS=-5V
Qgs 2.060 nC 2.055 nC -0.243
Qgd 1.500 nC 1.505 nC 0.333


Capacitance Characteristic

Measurement
Simulation

Simulation Result

Cbd(pF)
VDS(V) Error(%)
1.00 170.00 171.25 -0.74
2.00 150.00 148.00 1.33
4.00 125.00 126.00 -0.80
5.00 120.00 119.50 0.42
6.00 115.00 114.50 0.44
10.00 100.00 100.40 -0.40


Switching Time Characteristic


-12V

-8V
ID=-1A

Vg = 0/2.5V

-4V

0V
4.95us 5.00us 5.05us 5.10us 5.15us 5.20us
V(2)*4 I(V3)*10
Time

Evaluation circuit

L1 RL
3
V3
0.03uH 9.885
0Vdc

VDD
-10

R1 L2
2

V1 = 0 4.7 30nH 0
V1
V2 = -5 R2
TD = 5u
TR = 6n 4.7
TF = 7n
PW = 5u
PER = 100u

0 0 0

Simulation Result

ID=-1A, VDD=-10V
Measurement Simulation Error(%)
VGS=0/-2.5V
ton 48.00 ns 47.99 ns -0.02


Output Characteristic


-5.0A
-2.0V
-4.5A

-4.0A

-3.5A
-1.8V
-3.0A

-2.5A

-2.0A
-1.6V

-1.5A

-1.0A -1.4V

-0.5A
VGS=-1.2V
0A
0V -1.0V -2.0V
I(V3)
V_V2

Evaluation circuit

V3

0Vdc

V2
V1 -3Vdc
-4.0Vdc

0


Output Characteristics Reference

-2.0V

-1.8V

-1.6V

-1.4V

VGS=-1.2V


BODY DIODE

Forward Current Characteristic

1.0A

0.5A

0A
0V 1.0V 2.0V
I(V2)
V_V3

Evaluation Circuit

R1

0.01m
V2

0Vdc

V3

0Vdc

0


Comparison Graph


Simulation Result

Vfwd(V) Vfwd(V)
Ifwd(A) Measurement Simulation %Error
0.001 0.418 0.417 -0.294
0.002 0.437 0.437 0.081
0.005 0.463 0.465 0.381
0.010 0.484 0.486 0.352
0.020 0.504 0.507 0.597
0.050 0.537 0.536 -0.111
0.100 0.565 0.567 0.285
0.200 0.590 0.588 -0.322
0.500 0.639 0.632 -1.084
1.000 0.663 0.670 1.120


Forward Current Characteristic Reference


Reverse Recovery Characteristic


400mA

300mA

200mA

100mA

-0mA

-100mA

-200mA

-300mA

-400mA
14.99us 15.01us 15.03us 15.05us 15.07us 15.09us
I(R1)
Time

Evaluation Circuit

U2

R1

50

V1 = {-9.43} V1
V2 = {10.6}
TD = 0
TR = 10n
TF = 10n
PW = 15u
PER = 100u 0

0

Comparison Table

Measurement Simulation %Error
trj (ns) 9.8 ns 9.85 ns 0.510


Reverse Recovery Characteristic Reference

Measurement

Trj =9.8(ns)
Trb=22(ns)
Conditions: Ifwd=Irev=0.2(A), Rl=50

Example

Relation between trj and trb


ESD PROTECTION DIODE

Zener Voltage Characteristic


50mA

25mA

0A
0V 25V 50V
I(V2)
V_V3

Evaluation Circuit

R1

0.01m

U1
V1
0Vdc DZ

0


Zener Voltage Characteristic Reference


SPICE MODEL of SSM3J13T (Standard+BDS Model) in SPICE PARK

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