SPICE MODEL of 2SK2920 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Model parameter)
PART NUMBER: 2SK2920
MANUFACTURER: TOSHIBA
Body Diode (Model parameter) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

2. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

3. Transconductance Characteristic
Circuit Simulation Result
7
6
5
4
gfs
3
2
Measurement
Simulation
1
0.5 1.5 2.5 3.5 4.5
ID(A)
Comparison table
gfs
Id(A) Error(%)
Measurement Simulation
0.5 2.0054 2.028 1.127
1 2.857 2.825 -1.120
2 4 3.968 -0.800
5 6.25 6.12 -2.080
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

4. Vgs-Id Characteristic
Circuit Simulation result
10A
8A
6A
4A
2A
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V
I(V3)
V_V1
Evaluation circuit
V3
0Vdc
U1
V2
2SK2920
V1 10
6
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

5. Comparison Graph
Circuit Simulation Result
Measurement
Simulation
4.5
3.5
ID - Drain Current - A
2.5
1.5
0.5
0 1 2 3 4 5 6
VGS - Gate to Source Voltage - V
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
0.5 3.45 3.5843 3.893
1 3.75 3.7947 1.192
2 4.1 4.0955 -0.110
5 4.7 4.7024 0.051
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

6. Rds(on) Characteristic
Circuit Simulation result
2.5A
2.0A
1.5A
1.0A
0.5A
0A
0V 0.5V 1.0V 1.5V 2.0V
I(V2)
V_V3
Evaluation circuit
V2
0Vdc
U1
V3
2SK2920 0Vdc
V1
10
0
Simulation Result
ID=2.5A, VGS=10V Measurement Simulation Error (%)
R DS (on) 0.56  0.581  3.75
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

7. Gate Charge Characteristic
Circuit Simulation result
10V
8V
6V
4V
2V
0V
0 2n 4n 6n 8n 10n 12n 14n
V(W1:3)
Time*1mA
Evaluation circuit
RON = 1.0 U1
ROFF = 1e6
ION = 0
IOFF = 100u
W1
+ I2
2SK2920 D1
-
Dbreak
W 3
I1
I1 = 0
I2 = 1m V1
TD = 0
TR = 10n 36
TF = 10n
PW = 200u
PER = 500u
0
Simulation Result
VDD=36V,ID=3A Measurement Simulation Error (%)
Qgs 2 nC 2.0122 nC 0.610
Qgd 4 nC 4.0052 nC 0.130
Qg 14 nC 8.7555 nC -37.461
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

8. Gate Charge Characteristic Reference
10
VDD=36V
8
GATE VOLTAGE Vg
6
4
2
0
0 2 4 6 8 10 12 14
GATE CHARGE Qg(nc)
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

9. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
0.2 270 269 -0.370
0.5 245 247 0.816
1 220 218 -0.909
2 180 179.5 -0.278
5 120 122 1.667
10 85 84 -1.176
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

10. Switching Time Characteristic
Circuit Simulation result
15V
10V
5V
0V
1.95us 2.00us 2.05us 2.10us
V(U1:G) V(U1:D)/10
Time
Evaluation circuit
L1 R2
50nH
U1 40
L2
V1
100
30nH
V1 = 0 V2 R4 2SK2920
V2 = 10
TD = 2u 50
TR = 6n
TF = 7n
PW = 10u
PER = 30u
0
Simulation Result
ID=5 A, VDD=100V
Measurement Simulation Error(%)
VGS=0/10V
ton 20.000 ns 19.962 ns -0.19
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

11. Output Characteristic
Circuit Simulation result
10A
8 5.5
8A
5
6A
4.5
4A
2A
VGS=4V
0A
0V 10V 20V 30V 40V 50V
I(Vdsense)
V_Vvariable
Evaluation circuit
Vdsense
0Vdc
U2
2SK2920
Vv ariable
Vstep
10
4
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

12. BODY DIODE
Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
100mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
2SK2920
V1
0Vdc
U1
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

13. Comparison Graph
Circuit Simulation Result
100
Measurement
Simulation
Drain reverse current IDR(A)
10
1
0.1
0 0.2 0.4 0.6 0.8 1 1.2 1.4
Source-Drain voltage VSD(V)
Simulation Result
VSD(V)
Ifwd(A) Measuremen Simulation %Error
0.1 0.7 0.703 0.429
0.2 0.73 0.728 -0.274
0.5 0.77 0.766 -0.519
1 0.8 0.8 0.000
2 0.84 0.844 0.476
5 0.94 0.939 -0.106
10 1.07 1.0698 -0.019
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

14. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
14.6us 15.0us 15.4us 15.8us 16.2us 16.6us
I(RL)
Time
Evaluation Circuit
RL
50
2SK2920
V1 = -9.2825 V1
V2 = 10.726
TD = 0
TR = 10n
TF = 10n
PW = 15u U1
PER = 100u
0
Compare Measurement vs. Simulation
Trr(ns) Measurement Simulation Error (%)
Trj+Trb (ns) 500 502.836 0.567
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

15. Reverse Recovery Characteristic Reference
Trj=284(ns)
Trb=216(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

16. ESD PROTECTION DIODE
Zener Voltage Characteristic
Circuit Simulation Result
10mA
5mA
0A
0V 25V 50V
I(R1)
V_V1
Evaluation Circuit
2SK2920
R1
0.01m
R2
V1
0Vdc U1 1G
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

17. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006