SPICE MODEL of 2SK2601 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Model Parameters)
PART NUMBER: 2SK2601
MANUFACTURER: TOSHIBA
Body Diode (Model Parameters) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

2. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

3. Transconductance Characteristic
Circuit Simulation Result
20
18
16
14
12
gfs
10
8
6
4
2 Measurement
Simulation
0
0 1 2 3 4 5 6 7 8 9 10
ID(A)
Comparison table
gfs
Id(A) Error(%)
Measurement Simulation
0.1 1.400 1.429 2.071
0.2 2.000 2.000 0.000
0.5 3.100 3.125 0.806
1 4.100 4.167 1.634
2 5.700 5.882 3.193
5 8.900 9.091 2.146
10 12.000 12.346 2.883
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

4. Vgs-Id Characteristic
Circuit Simulation result
15A
10A
5A
0A
0V 2V 4V 6V 8V 10V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
Vv ariable
20Vdc U25
2SK2601 10Vdc
V2
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

5. Comparison Graph
Circuit Simulation Result
10
Measurement
Simulation
9
8
7
ID - Drain Current - A
6
5
4
3
2
1
0
0 1 2 3 4 5 6
VGS - Gate to Source Voltage - V
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
0.1 3.750 3.750 0.000
0.2 3.800 3.811 0.289
0.5 3.900 3.933 0.846
1 4.000 4.072 1.800
2 4.200 4.272 1.714
5 4.600 4.680 1.739
10 5.100 5.156 1.098
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

6. Rds(on) Characteristic
Circuit Simulation result
4.0A
3.0A
2.0A
1.0A
0A
0V 1.0V 2.0V 3.0V 4.0V
I(V3)
V_VDS
Evaluation circuit
V3
0Vdc
VDS
U25
10Vdc
2SK2601 0Vdc
VGS
0
Simulation Result
ID=5A, VGS=10V Measurement Simulation Error (%)
R DS (on) 0.750  0.750  0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

7. Gate Charge Characteristic
Circuit Simulation result
20V
15V
10V
5V
0V
0 10n 20n 30n 40n 50n
V(W1:3)
Time*1mS
Evaluation circuit
V2
0Vdc
Dbreak
PER = 1000u
PW = 600u W1 U25
TF = 10n + D1
TR = 10n 2SK2601 I2
TD = 0
- 10Adc
I2 = 1m W
I1 IOFF = 1mA
I1 = 0 ION = 0uA
V1
400Vdc
0
Simulation Result
VDD=400V,ID=8A
Measurement Simulation Error (%)
,VGS=10V
Qgs(nC) 6.000 6.220 3.667
Qgd(nC) 13.000 12.992 -0.062
Qg 30.000 24.886 -17.047
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
0.2 1170.000 1180.000 0.855
0.5 1110.000 1105.000 -0.450
1 1000.000 1000.000 0.000
2 795.000 800.000 0.629
5 485.000 490.000 1.031
10 300.000 310.000 3.333
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

9. Switching Time Characteristic
Circuit Simulation result
14V
12V
10V
8V
6V
4V
2V
0V
1.00us 1.10us 1.20us 1.30us 1.40us
V(L2:1)/30 V(L1:2)
Time
Evaluation circuit
L2 R2
50nH
60
L1
U28
30nH
V1 = 0 V1
V2 = 10 V2 2SK2601 300Vdc
TD = 1u R3
TR = 10n
TF = 10n 50
PW = 10u
PER = 200u
0
Simulation Result
ID=5A, VDD=300V
Measurement Simulation Error(%)
VGS=0/10V
Ton(ns) 50.000 49.790 -0.420
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

10. Output Characteristic
Circuit Simulation result
20A
16A 5.5
12A
5
8A
4.5
4A
VGS=4V
0A
0V 10V 20V 30V 40V 50V
I(Vdsense)
V_Vvariable
Evaluation circuit
Vdsense
0Vdc
U26 Vv ariable
10Vdc
2SK2601
10Vdc
Vstep
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

11. BODY DIODE
Forward Current Characteristic
Circuit Simulation Result
30A
10A
1.0A
100mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V 1.8V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
2SK2601
V1 U25
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

12. Comparison Graph
Circuit Simulation Result
10
Measurement
Simulation
Drain reverse current IDR(A)
1
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
Source-Drain voltage VSD(V)
Simulation Result
VSD(V)
IDR(A) Measuremen Simulation %Error
0.1 0.620 0.625 0.806
0.2 0.660 0.654 -0.909
0.5 0.695 0.692 -0.432
1 0.725 0.723 -0.276
2 0.755 0.759 0.530
5 0.820 0.820 0.000
10 0.890 0.888 -0.225
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
3us 4us 5us 6us 7us 8us 9us 10us 11us 12us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.4v V1
V2 = 10.7v
TD = 250n
TR = 10ns 2SK2601
TF = 13ns
PW = 5us U26
PER = 100us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
Trr(us) 2.500 2.532 1.280
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

14. Reverse Recovery Characteristic Reference
Trj=1.25(us)
Trb=1.25(us)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

15. ESD PROTECTION DIODE
Zener Voltage Characteristic
Circuit Simulation Result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V 10V 20V 30V 40V 50V 60V 70V 80V 90V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1
0Vdc
R2 U26
2SK2601
100MEG
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

16. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006