SPICE MODEL of TK30A06J3 (Standard+BDS Model) in SPICE PARK
•
0 likes•195 views
SPICE MODEL of TK30A06J3 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
Recommended
Recommended
More Related Content
What's hot
What's hot (20)
Similar to SPICE MODEL of TK30A06J3 (Standard+BDS Model) in SPICE PARK
Similar to SPICE MODEL of TK30A06J3 (Standard+BDS Model) in SPICE PARK (20)
More from Tsuyoshi Horigome
More from Tsuyoshi Horigome (20)
Recently uploaded
Recently uploaded (20)
SPICE MODEL of TK30A06J3 (Standard+BDS Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Model Parameters) PART NUMBER: TK30A06J3 MANUFACTURER: TOSHIBA Body Diode (Model Parameters) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 2. Circuit Configuration All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 3. MOSFET MODEL PSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 4. Transconductance Characteristic Circuit Simulation Result 50 45 40 35 gfs 30 25 20 Measurement 15 Simulation 10 1 2 3 4 5 6 7 8 9 10 ID - Drain Current - A Comparison table gfs Id(A) Error(%) Measurement Simulation 1 14.000 14.286 2.043 2 25.000 25.571 2.284 5 36.500 37.333 2.282 10 45.000 45.455 1.011 20 14.000 14.286 2.043 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 5. Vgs-Id Characteristic Circuit Simulation result 100A 80A 60A 40A 20A 0A 0V 2.0V 4.0V 6.0V 8.0V I(V3) V_V2 Evaluation circuit V3 0Vdc U30 Vv ariable 10Vdc TK30A06J3 10Vdc V2 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 6. Comparison Graph Circuit Simulation Result 10.00 Measurement 9.00 Simulation 8.00 7.00 ID - Drain Current - A 6.00 5.00 4.00 3.00 2.00 1.00 0 2 4 6 8 10 VGS - Gate to Source Voltage - V Simulation Result VGS(V) ID(A) Error (%) Measurement Simulation 1 2.700 2.704 0.148 2 2.750 2.788 1.382 5 2.950 2.975 0.847 10 3.300 3.298 -0.061 20 3.500 3.536 1.029 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 7. Rds(on) Characteristic Circuit Simulation result 20A 18A 16A 14A 12A 10A 8A 6A 4A 2A 0A 0V 0.2V 0.4V 0.6V 0.8V 1.0V I(V3) V_VDS Evaluation circuit V3 0Vdc U30 VDS 10Vdc TK30A06J3 0Vdc VGS 0 Simulation Result ID=15A, VGS=10V Measurement Simulation Error (%) R DS (on) 0.019 0.019 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 8. Gate Charge Characteristic Circuit Simulation result 20V 16V 12V 8V 4V 0V 0 10n 20n 30n 40n 50n 60n V(W1:3) Time*1mS Evaluation circuit V2 0Vdc Dbreak PER = 1000u U30 PW = 600u W1 TF = 10n + TK30A06J3 D1 TR = 10n I2 - TD = 0 30Adc I2 = 1m W I1 IOFF = 1mA I1 = 0 ION = 0uA V1 48Vdc 0 Simulation Result VDD=48V,ID=30A Measurement Simulation Error (%) ,VGS=10V Qgs(nC) 7.000 6.993 -0.100 Qgd(nC) 9.000 9.041 0.456 Qg 36.000 29.630 -17.694 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 9. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 0.1 380 378 -0.526 0.2 355 350 -1.408 0.5 300 300 0.000 1 250 249 -0.400 2 200 200 0.000 5 140 138 -1.429 10 105 102 -2.857 20 80 80 0.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 10. Switching Time Characteristic Circuit Simulation result 16V 14V 12V 10V 8V 6V 4V 2V 0V 0.85us 0.90us 1.00us 1.10us 1.20us 1.30us V(L2:1)/3 V(L1:2) Time Evaluation circuit L2 R2 6.5nH 2 R1 L1 U33 30nH V1 = 0 TK30A06J3 V1 V2 = 20 V2 4.7 30Vdc TD = 1u R3 TR = 1n TF = 1n 4.7 PW = 10u PER = 200u 0 Simulation Result ID=15 A, VDD=200V Measurement Simulation Error(%) VGS=0/10V Ton(ns) 16.000 15.875 -0.781 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 11. Output Characteristic Circuit Simulation result 100A 5V 80A 4.5V 60A 4V 40A 3.5V 20A VGS=3V 0A 0V 2V 4V 6V 8V 10V I(Vdsense) V_Vvariable Evaluation circuit Vdsense 0Vdc U33 Vv ariable 10Vdc TK30A06J3 10Vdc Vstep 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 12. BODY DIODE SPICE MODEL Forward Current Characteristic Circuit Simulation Result 100A 10A 1.0A 100mA 0V 0.4V 0.8V 1.2V I(R1) V_V1 Evaluation Circuit R1 0.01m TK30A06J3 V1 0Vdc U30 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 13. Comparison Graph Circuit Simulation Result 100.00 Measurement Simulation Drain reverse current IDR(A) 10.00 1.00 0.10 0 0.4 0.8 1.2 1.6 Source-Drain voltage VSD(V) Simulation Result VSD(V) IDR(A) Measuremen Simulation %Error 0.1 0.620 0.624 0.645 0.2 0.650 0.650 0.000 0.5 0.690 0.687 -0.435 1 0.720 0.716 -0.556 2 0.740 0.746 0.811 5 0.800 0.794 -0.750 10 0.850 0.843 -0.824 20 0.900 0.912 1.333 50 1.080 1.078 -0.185 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 14. Reverse Recovery Characteristic Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 8.68us 8.76us 8.84us 8.92us 9.00us 9.08us I(R1) Time Evaluation Circuit R1 50 V1 = -9.4v V1 TK30A06J3 V2 = 10.7v TD = 0.85u U36 TR = 10ns TF = 19ns PW = 8us PER = 100us 0 Compare Measurement vs. Simulation Trr(ns) Measurement Simulation Error (%) Trr(ns) 43.800 43.129 -1.532 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 15. Reverse Recovery Characteristic Reference Trj=11.800(ns) Trb=32.00(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 16. ESD PROTECTION DIODE SPICE MODEL Zener Voltage Characteristic Circuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 0Vdc R2 U31 TK30A06J3 100MEG 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 17. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2006