SPICE MODEL of 2SK3435 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Model Parameters)
PART NUMBER: 2SK3435
MANUFACTURER: NEC
Body Diode (Model Parameters) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

2. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

3. Transconductance Characteristic
Circuit Simulation Result
60
55
50
45
40
35
gfs
30
25
20
15
10 Measurement
5 Simulation
0
1 3 5 7 9 11 13 15 17 19
ID - Drain Current - A
Comparison table
gfs
Id(A) Error(%)
Measurement Simulation
0.1 2.500 2.500 0.000
0.2 3.950 4.000 1.266
0.5 7.000 7.143 2.043
1 8.900 9.091 2.146
2 12.400 12.600 1.613
5 20.500 20.833 1.624
10 29.000 29.412 1.421
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

4. Vgs-Id Characteristic
Circuit Simulation result
1.0A
0.5A
0A
1.0V 2.0V 3.0V 4.0V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
U28
Vv ariable
2SK3435
10Vdc
10Vdc
V2
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

5. Comparison Graph
Circuit Simulation Result
10.00
Measurement
9.00 Simulation
8.00
7.00
ID - Drain Current - A
6.00
5.00
4.00
3.00
2.00
1.00
0.00
0.0 1.0 2.0 3.0 4.0 5.0
VGS - Gate to Source Voltage - V
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
0.1 2.390 2.404 0.586
0.2 2.400 2.434 1.417
0.5 2.450 2.492 1.714
1 2.500 2.557 2.280
2 2.600 2.649 1.885
5 2.800 2.833 1.179
10 3.000 3.040 1.333
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

6. Rds(on) Characteristic
Circuit Simulation result
50A
40A
30A
20A
10A
0A
0V 200mV 400mV 500mV
I(V3)
V_VDS
Evaluation circuit
V3
0Vdc
U28
VDS
2SK3435
10Vdc
0Vdc
VGS
0
Simulation Result
ID=40A, VGS=10V Measurement Simulation Error (%)
R DS (on) 0.011 0.011 0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

7. Gate Charge Characteristic
Circuit Simulation result
20V
10V
0V
0 20n 40n 60n 80n 100n 120n 140n
V(W1:3)
Time*1mS
Evaluation circuit
V2
0Vdc
U28
Dbreak
PER = 1000u
PW = 600u W1 2SK3435
TF = 10n + D1
TR = 10n I2
-
TD = 0 80Adc
I2 = 1m W
I1 IOFF = 1mA
I1 = 0 ION = 0uA
V1
48Vdc
0
Simulation Result
VDD=48V,ID=80A
Measurement Simulation Error (%)
,VGS=10V
Qgs(nC) 10.000 10.230 2.300
Qgd(nC) 16.000 16.029 0.181
Qg 60.000 45.025 -24.958
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

8. Switching Time Characteristic
Circuit Simulation result
12V
10V
8V
6V
4V
2V
0V
0.4us 0.8us 1.2us 1.6us 2.0us 2.4us 2.8us
V(L2:1)/3 V(L1:2)
Time
Evaluation circuit
L2 R2
18nH
0.75
U31
R1 L1
2SK3435
30nH
V1 = 0 10 V1
V2 = 10 V2 30Vdc
TD = 1u
TR = 1n
TF = 1n
PW = 10u
PER = 200u
0
Simulation Result
ID=40 A, VDD=30V
Measurement Simulation Error(%)
VGS=0/10V
Ton(ns) 80.000 79.509 -0.614
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

9. Output Characteristic
Circuit Simulation result
20A
3.5.V
18A
16A
14A
12A
10A 3V
8A
6A
4A
2A
VGS=2.5V
0A
0V 2V 4V 6V 8V 10V
I(Vdsense)
V_Vvariable
Evaluation circuit
Vdsense
0Vdc
U30
2SK3435 Vv ariable
10Vdc
10Vdc
Vstep
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

10. Output Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

11. BODY DIODE
Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
100mA
0V 0.5V 1.0V 1.5V 2.0V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1 2SK3435
0Vdc
U27
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

12. Comparison Graph
Circuit Simulation Result
10
Measurement
Simulation
Drain reverse current IDR(A)
1
0.1
0 0.2 0.4 0.6 0.8 1 1.2
Source-Drain voltage VSD(V)
Simulation Result
VSD(V)
IDR(A) Measuremen Simulation %Error
0.1 0.600 0.600 0.000
0.2 0.625 0.622 -0.480
0.5 0.650 0.651 0.154
1 0.670 0.673 0.448
2 0.700 0.697 -0.429
5 0.735 0.733 -0.272
10 0.765 0.766 0.131
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
4.9us 5.0us 5.1us 5.2us 5.3us 5.4us 5.5us 5.6us 5.7us 5.8us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.4v V1
V2 = 10.7v D3435
TD = 265n
TR = 10ns U28
TF = 19ns
PW = 5us
PER = 100us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
Trr(ns) 96.000 95.988 -0.013
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

14. Reverse Recovery Characteristic Reference
Trj=26.00(ns)
Trb=70.000(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

15. ESD PROTECTION DIODE
Zener Voltage Characteristic
Circuit Simulation Result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1
0Vdc
R2
2SK3435
100MEG
U28
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

16. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007