SPICE MODEL of 2SK3565 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Model parameter)
PART NUMBER: 2SK3565
MANUFACTURER: TOSHIBA
Body Diode (Model parameter) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

2. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

3. Transconductance Characteristic
Circuit Simulation Result
10
8
6
gfs
4
2
Measurement
Simulation
0
0.5 1.5 2.5 3.5 4.5
ID(A)
Comparison table
gfs
Id(A) Error(%)
Measurement Simulation
0.5 2.5 2.604 4.160
1 3.571 3.650 2.212
2 5 5.102 2.040
5 7.692 7.812 1.560
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

4. Vgs-Id Characteristic
Circuit Simulation result
10A
8A
6A
4A
2A
0A
0V 2V 4V 6V 8V 10V
I(V3)
V_V1
Evaluation circuit
V3
0Vdc
U1
V2
2SK3565
V1 12.8
5.8
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

5. Comparison Graph
Circuit Simulation Result
6.5
Measurement
Simulation
4.5
ID - Drain Current - A
2.5
0.5
0 2 4 6 8 10
VGS - Gate to Source Voltage - V
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
0.5 4.25 4.449 4.682
1 4.4 4.6123 4.825
2 4.7 4.8462 3.111
5 5.3 5.3202 0.381
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

6. Rds(on) Characteristic
Circuit Simulation result
3.0A
2.0A
1.0A
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V 7.0V
I(V2)
V_V3
Evaluation circuit
V2
0Vdc
U1
V3
2SK3565 0Vdc
V1
10
0
Simulation Result
ID=3A, VGS=10V Measurement Simulation Error (%)
R DS (on) 2  2.035  1.75
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

7. Gate Charge Characteristic
Circuit Simulation result
20V
16V
12V
8V
4V
0V
0s 10ns 20ns 30ns 40ns
V(W1:3)
Time*1m
Evaluation circuit
RON = 1.0 U1
ROFF = 1e6
ION = 0
IOFF = 100u
W1
+ I2
2SK3565 D1
-
Dbreak
W 5
I1
I1 = 0
I2 = 1m V1
TD = 0
TR = 10n
TF = 10n
PW = 200u 400
PER = 500u
0
Simulation Result
VDD=400V,ID=5A Measurement Simulation Error (%)
Qgs 5.2 nC 5.3228 nC 2.362
Qgd 11.3 nC 11.269 nC -0.274
Qg 26 nC 22.358 nC -14.008
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
0.1 1150 1145 -0.435
0.2 1100 1095 -0.455
0.5 950 960 1.053
1 800 800 0.000
2 600 598 -0.333
5 350 340 -2.857
10 190 195 2.632
20 100 105 5
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

9. Switching Time Characteristic
Circuit Simulation result
15V
10V
5V
0V
1.9us 2.0us 2.1us 2.2us 2.3us
V(U1:G) V(U1:D)/20
Time
Evaluation circuit
L1 R2
50nH
66.7
U1
L2
V1
V1 = 0 V2 30nH
V2 = 10 200
TD = 2u R4 2SK3565
TR = 6n
TF = 7n 50
PW = 10u
PER = 30u
0
Simulation Result
ID=3 A, VDD=200V
Measurement Simulation Error(%)
VGS=0/10V
ton 70.000 ns 70.495 ns 0.707
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

10. Output Characteristic
Circuit Simulation result
6.0A
5.0A
5.25
4.0A
3.0A 5
2.0A
4.75
1.0A
VGS=4.5 V
0A
0V 10V 20V 30V
I(Vdsense)
V_Vvariable
Evaluation circuit
Vdsense
0Vdc
U1
2SK3565
Vv ariable
Vstep
20
4.5
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

11. BODY DIODE
Forward Current Characteristic
Circuit Simulation Result
10A
1.0A
100mA
0V 0.4V 0.8V 1.2V 1.6V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
2SK3565
V1
0Vdc
U1
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

12. Comparison Graph
Circuit Simulation Result
10
Measurement
Simulation
Drain reverse current IDR(A)
1
0.1
0 0.4 0.8 1.2 1.6
Source-Drain voltage VSD(V)
Simulation Result
VSD(V)
Ifwd(A) Measuremen Simulation %Error
0.1 0.63 0.628 -0.317
0.2 0.66 0.660 0
0.5 0.71 0.711 0.141
1 0.76 0.762 0.263
2 0.825 0.829 0.485
5 0.97 0.962 -0.825
10 1.12 1.123 0.268
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
200mA
0A
-200mA
-400mA
10us 16us 24us 32us
I(RL)
Time
Evaluation Circuit
RL
50
V1 = -9.33 V1 2SK3565
V2 = 10.65
TD = 0
TR = 10n
TF = 10n
PW = 15u
PER = 100u U4
0
Compare Measurement vs. Simulation
Trr(ns) Measurement Simulation Error (%)
Trj+Trb (us) 5.68 5.6807 0.012
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

14. Reverse Recovery Characteristic Reference
Trj=2.4(us)
Trb=3.28(us)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

15. ESD PROTECTION DIODE
Zener Voltage Characteristic
Circuit Simulation Result
10mA
5mA
0A
0V 50V 100V
I(R1)
V_V1
Evaluation Circuit
U1
R1
0.01m
2SK3565 R2
V1
0Vdc 1G
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

16. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006