SPICE MODEL of 2SK3568 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Model parameter)
PART NUMBER: 2SK3568
MANUFACTURER: TOSHIBA
Body Diode (Model parameter) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

2. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

3. Transconductance Characteristic
Circuit Simulation Result
14
12
10
8
gfs
6
4
2
Measurement
Simulation
0
0.5 2.5 4.5 6.5 8.5
ID(A)
Comparison table
gfs
Id(A) Error (%)
Measurement Simulation
0.5 3.333 3.448 3.450
1 4.762 4.808 0.966
2 6.667 6.667 0
5 10 10.121 1.210
10 13.514 13.736 1.643
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

4. Vgs-Id Characteristic
Circuit Simulation result
24A
20A
16A
12A
8A
4A
0A
0V 2V 4V 6V 8V 10V 12V
I(V3)
V_V1
Evaluation circuit
V3
0Vdc
U1
V2
2SK3568
V1 15
5.8
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

5. Comparison Graph
Circuit Simulation Result
Measurement
Simulation
8.2
ID - Drain Current - A
6.2
4.2
2.2
0.2
0 2 4 6 8 10 12
VGS - Gate to Source Voltage - V
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
0.2 3.6 3.7216 3.378
0.5 3.7 3.8301 3.516
1 3.85 3.9539 2.699
2 4.15 4.1321 -0.431
5 4.6 4.4961 -2.259
10 4.99 4.9230 -1.343
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

6. Rds(on) Characteristic
Circuit Simulation result
6.0A
5.0A
4.0A
3.0A
2.0A
1.0A
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(V2)
V_V3
Evaluation circuit
V2
0Vdc
U1
V3
2SK3568 0Vdc
V1
10
0
Simulation Result
ID=6A, VGS=10V Measurement Simulation Error (%)
R DS (on) 0.4  0.3999  -0.025
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

7. Gate Charge Characteristic
Circuit Simulation result
20V
16V
12V
8V
4V
0V
0s 10ns 20ns 30ns 40ns 50ns 60ns
V(W1:3)
Time*1m
Evaluation circuit
RON = 1.0 U1
ROFF = 1e6
ION = 0
IOFF = 100u
W1
+ I2
2SK3568 D1
-
Dbreak
W 12
I1
I1 = 0
I2 = 1m V1
TD = 0
TR = 10n
TF = 10n
PW = 200u 400
PER = 500u
0
Simulation Result
VDD=400V,ID=12A Measurement Simulation Error (%)
Qgs 9 nC 9.0864 nC 0.960
Qgd 18 nC 18.335 nC 1.861
Qg 41 nC 37.576 nC -8.351
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
0.1 1850 1830 -1.081
0.2 1750 1760 0.571
0.5 1550 1570 1.290
1 1320 1325 0.379
2 1050 1010 -3.810
5 570 595 4.386
10 360 350 -2.778
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

9. Switching Time Characteristic
Circuit Simulation result
15V
10V
5V
0V
1.9us 2.0us 2.1us 2.2us 2.3us
V(U1:G) V(U1:D)/20
Time
Evaluation circuit
L1 R2
50nH
33
U1
L2
V1
V1 = 0 V2 30nH
V2 = 10 200
TD = 2u R4 2SK3568
TR = 6n
TF = 7n 50
PW = 10u
PER = 30u
0
Simulation Result
ID=6 A, VDD=200V
Measurement Simulation Error(%)
VGS=0/10V
ton 50.000 ns 50.521 ns 1.042
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

10. Output Characteristic
Circuit Simulation result
24A
20A
16A
5.2
5
12A
4.75
8A
4.5
4A
VGS=4 V
0A
0V 10V 20V 30V 40V 50V 60V
I(Vdsense)
V_Vvariable
Evaluation circuit
Vdsense
0Vdc
U1
2SK3568
Vv ariable
Vstep
50
4.5
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

11. BODY DIODE
Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
100mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
2SK3568
V1
0Vdc U1
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

12. Comparison Graph
Circuit Simulation Result
10
Measurement
Simulation
Drain reverse current IDR(A)
1
0.1
0 0.2 0.4 0.6 0.8 1 1.2
Source-Drain voltage VSD(V)
Simulation Result
VSD(V)
Ifwd(A) Measurement Simulation %Error
0.1 0.625 0.625 0
0.2 0.65 0.649 -0.154
0.5 0.68 0.682 0.294
1 0.715 0.713 -0.280
2 0.75 0.75 0
5 0.82 0.82 0
10 0.9 0.9 0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
200mA
0A
-200mA
-400mA
13us 16us 20us 23us
I(RL)
Time
Evaluation Circuit
RL
50
V1 = -9.33 V1 2SK3568
V2 = 10.65
TD = 0
TR = 10n
TF = 10n
PW = 15u
PER = 100u U1
0
Compare Measurement vs. Simulation
Trr(ns) Measurement Simulation Error (%)
Trj+Trb (us) 2.74 2.7456 0.204
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

14. Reverse Recovery Characteristic Reference
Trj=1.36(us)
Trb=1.38(us)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

15. ESD PROTECTION DIODE
Zener Voltage Characteristic
Circuit Simulation Result
10mA
5mA
0A
0V 50V 100V
I(R1)
V_V1
Evaluation Circuit
U1
R1
0.01m
2SK3568 R2
V1
0Vdc 1G
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

16. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006